Y012013 1 
1601579 A86022811
Silicon nitride joining
Mecartney, M.L.; Sinclair, R.; Loehman, R.E.
Stanford Univ., CA, USA
J. Am. Ceram. Soc. (USA) vol.68, no.9 472-8 Sept. 1985 CODEN: JACTAW
ISSN: 0002-7820
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (28 Refs)
Hot-pressed Si/sub 3/N/sub 4/ was joined using in MgO-Al/sub 2/O/sub 3/-SiO/sub 2/ glass composition chosen to approximate the oxide portion of the grain-boundary phase in the ceramic. After it has been heated at 1550 degrees to 1650 degrees C, the interface of the joined ceramic is an interlocking mixture of Si/sub 2/N/sub 2/O, beta -Si/sub 3/N/sub 4/, and a residual oxynitride glass. The kinetics of reactions between Si/sub 3/N/sub 4/ and the molten joining composition were studied by X-ray diffraction analysis of the phases present in Si/sub 3/N/sub 4/ powder-glass mixtures quenched after varied heat treatments. Analytical transmission electron microscopy of the composition and microstructure of the reaction zone in joined specimens, together with the X-ray diffraction results, suggests that the driving force for joining is the lowering of the Si/sub 3/N/sub 4/ interfacial energy when it is wet by the molten silicate, augmented by the negative Gibbs energy for the reaction SiO/sub 2/ (l)+Si/sub 3/N/sub 4/=2Si/sub 2/N/sub 2/O.
Desc.: adhesion; grain boundaries; hot pressing; interface structure; joining processes; quenching (thermal); reaction kinetics; silicon compounds; surface energy; transmission electron microscope examination of materials; X-ray diffraction examination of materials
Ident.: hot pressed Si/sub 3/N/sub 4/; MgO-Al/sub 2/O/sub 3/-SiO/sub 2/ glass composition; grain-boundary phase; interface; joined ceramic; interlocking mixture; Si/sub 2/N/sub 2/O; beta -S/sub 3/N/sub 4/; kinetics of reactions; molten joining composition; X-ray diffraction analysis; phases; microstructure; reaction zone; interfacial energy; negative Gibbs energy
Class Codes: A8190; A6170N; A8140G; A6848; A6840

Y012013 2
1581276 A86007746
EXOTIC, an experimental programme on the development of ceramic tritium breeding materials
Kwast, H.; Conrad, R.; Elen, J.D.
Netherlands Energy Res. Foundation, Petten, Netherlands
Sponsor:  Atomic Energy Soc. Japan; Iron & Steel Inst. Japan; Japan Inst. Metals; et al
J. Nucl. Mater. (Netherlands) vol.133-134 246-50 1985 CODEN: JNUMAM
ISSN: 0022-3115
Proceedings of the First International Conference on Fusion Reactor Materials (ICFRM-1) 3-6 Dec. 1984 Tokyo, Japan
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (15 Refs)
An experimental programme, EXOTIC, has been initiated by SNL-Springfields, SCK/CEN-Mol and ECN-Petten to manufacture and characterize the Li-compounds Li/sub 2/O, Li/sub 2/TiO/sub 3/, Li/sub 3/ZrO/sub 3/ and Li/sub 8/ZrO/sub 6/ and to a lesser extent also LiAlO/sub 2/ and Li/sub 2/SiO/sub 3/. After complete characterization and measurement of some important physical, chemical and mechanical properties samples of these Li-compounds will, in corporation with the Joint Research Centre JRC Petten, be irradiated in the HFR-Petten to investigate in particular the tritium release characteristics. This will be done by in situ tritium extraction. After irradiation the samples will be subjected to detailed post-irradiation testing. All activities are integrated in the European Fusion Technology Programme. The results should contribute among other things to the selection and specification of the material for the NET/INTOR blanket.
Desc.: ceramics; fusion reactor materials; lithium compounds
Ident.: fusion reactor materials; T breeding materials; chemical properties; physical properties; EXOTIC; ceramic; Li-compounds; Li/sub 2/O Li/sub 2/TiO/sub 3/; Li/sub 3/ZrO/sub 3/; Li/sub 8/ZrO/sub 6/; LiAlO/sub 2/ ; Li/sub 2/SiO sub 3/; mechanical properties
Class Codes: A2852F

Y012013 3
1581261 A86007741
Selection, characterization and testing of ceramic breeder materials
Kummerer, K.R.; Dienst, W.
Kernforschungszentrum Karlsruhe GmbH, Germany
Sponsor: Atomic Energy Soc. Japan; Iron & Steel Inst. Japan; Japan Inst. Metals; et al
J. Nucl. Mater. (Netherlands) vol.133-134 176-80 1985 CODEN: JNUMAM
ISSN: 0022-3115
Proceedings of the First International Conference on Fusion Reactor Materials (ICFRM-1) 3-6 Dec. 1984 Tokyo, Japan
USCCC Code: 0022-3115/85$03.30
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (9 Refs)
Some important criteria for ceramic breeder lead to the selection of the double oxides of lithium as e.g. the aluminates and silicates. The authors describe a characterization and testing program, mainly for lithium silicates, including thermophysical, mechanical and chemical properties. The realistic irradiation conditions in fusion reactor blankets are compared to the possibilities in thermal and fast fission reactors. The consideration are backed up by experimental of laboratory and inpile tests.
Desc.: ceramics; creep; elastic moduli; fusion reactor materials; lithium compounds; radiation effects
Ident.: thermophysical properties; mechanical properties; Li/sub 2/SiO/sub 3/; Li/sub 4/SiO/sub 4/; creep elastic modulus; compressive strength; ceramic breeder materials; chemical properties; irradiation conditions; fusion reactor blankets; fast fission reactors
Class Codes: A2852F; A6180H; A8140L; A6220H; A8140J; A6220D

Y012013 4
1561668 A85126129
Glasses and ceramics from colloids
Scherer, G.W.
Div. of R&D, Corning Glass Works, NY, USA
J. Non-Cryst. Solids (Netherlands) vol.73, no.1-3 661-7 Aug. 1985 CODEN: JNCSBJ
ISSN: 0022-3093
Proceedings of the Symposium on Glass Science and Technology. Problems and Prospects for 2004 1-5 July 1984 Vienna, Austria
USCCC Code: 022-3093/85/$03.30
Treatment: GENERAL, REVIEW
Doc. Type: CONF. PAP.
Lang.: Eng. (24 Refs)
This paper concerns the technical difficulties associated with the fabrication of amorphous and crystaline bodies from colloidal suspensions. When particles are grown in solution, it can be difficult to achieve homogeneity and prevent agglomeration, and the rate of production of particles is slow. Particle growth in the vapor phase is efficient, but the accessible range of compositions is smaller, and the particle size distribution cannot be as closely controlled as in solution methods. Future developments are likely to remove these limitations, so that colloidal methods will be used for the production of oxides, halides, and chalcogenides with high purity. Both glasses and fine-grained ceramics will be prepared in this way. The colloidal approach complements the sol-gel method by offering similarly high purity and homogeneity in large pieces, but with higher firing temperatures.
Desc.: ceramics; colloids; glass; materials preparation; particle size
Ident.: glass fabrication; ceramics fabrication; particle growth; accessible composition range; technical difficulties; colloidal suspersions ; homogeneity; agglomeration; particle size distribution; colloidal methods ; high purity
Class Codes: A81?0P; A8270D; A8120L

Y012013 5
1561314 A85121788, B85061859
A comparison between silicon nitride films made by PCVD of N/sub 2/-SiH/sub 4//Ar and N/sub 2/-SiH/sub 4//He
Allaert, K.; Van Calster, A.; Loos, H.; Lequesne A.
Lab. of Electron., Ghent State Univ., Belgium
J. Electrochem. Soc. (USA) vol.132, no.7 1763-6 July 1985 CODEN: JESOAN
ISSN: 0013-4651
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (8 Refs)
Reports on the passivating properties of PCVD silicon nitride obtained from the gas mixtures N/sub 2/+SiH/sub 4/ diluted in Ar (SiH/sub 4//Ar) and N/sub 2/+SiH/sub 4/ diluted in He (SiH/sub 4//He). Ellipsometric data, Auger data, IR data, mechanical stress, pinholes and electrical data are presented. The stability of the hydrogen bonds in the silicon nitride is evaluated by low temperature annealing. By comparison of the properties of nitrides made from N/sub 2/+SiH/sub 4//He and N/sub 2/+SiH/sub 4//Ar, it is concluded that the former one yields more uniform films, less critical to deposition temperature, while the latter process behaves better for passivating purposes. On the other hand, it is shown that the carrier gas (He or Ar) has a marked influence on the properties of the films, especially on the hydrogen content. It is found that both PCVD nitrides are best described as Si/sub x/N/sub y/H/sub z/O/sub t/.
Desc.: annealing; Auger effect; chemical vapour deposition; CVD coatings; ellipsometry; infrared spectra of inorganic solids; insulating thin films; passivation; silicon compounds
Ident.: ellipsometric data; Si/sub 3/N/sub 4/ films; N/sub 2/; Ar; SiH/sub 4/; He; passivating properties; Auger data; IR data; mechanical stress; pinholes; electrical data; Si/sub x/N/sub y/H/sub z/O/sub t/
Class Codes: A8160C; A8115H; A6855; B2550E B0520F

Y012013 6
1553442 A85121555
Effect of powder characteristics on microstructure and properties in
Alkoxide-prepared PZT ceramics
Buchanan, R.C.; Boy, J.
Dept. of Ceramic Eng., Illinois Univ., Urbana, IL, USA 
J. Electrochem. Soc. (USA) vol.132, no.7 1671-7 July 1985 CODEN: JESOAN
ISSN: 0013-4651
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (23 Refs)
The effects of coprecipitation parameters on agglomerate structure in PZT (53: 47) powders prepared from butoxide precursors were studied. Results showed that differences in agglomerate structures developed during coprecipitation persisted throughout subsequent processing steps, and the resulting sintered densities and microstructures to be correlated with the agglomerate structures. Coprecipitation parameters which most significantly affected the powder characteristics included temperature, dilution, pH, and hydrolysis rate (controlled by H/sub 2/O concentration). Such processing parameters as powder rinsing, calcination temperature, and spray drying conditions also significantly influenced the developed microstructures. For equivalent processing conditions, the most dense and uniform microstructures were developed with the softer (and smaller) agglomerate structures, achieved from an acid (pH 3.7) medium of low (3-5 volume percent) solids content with rapid hydrolysis ( approximately 32 ml H/sub 2/O/min) and low temperature rise (10 degrees to 15 degrees ). Measured dielectric constants on the sintered PZT samples were found, generally, to increase with average grain size.
Desc.: ceramics; crystal microstructure; grain size; lead compounds ; material preparation; permittivity; powder technology; powders; precipitation (physical chemistry)
Ident.: powder characteristics; microstructure; properties; alkoxide-prepared PZT ceramics; coprecipitation parameters; agglomerate structure; powders; butoxide precursors; processing steps; sintered densities; temperature; dilution; pH; hydrolysis rate; powder rinsing; calcination temperature; spray drying conditions; dielectric constants; sintered; grain size
Class Codes: A8120L; A6480G; A8120E

Y012013 7
1553167 A85121995
Cermet diaphragm and integrated electrode-diaphragm units for advanced alkaline water electrolysis
Wendt, H.; Hofmann, H.
Int. fur Chem. Technol., TH, Darmstadt, Germany
Int. J. Hydrogen Energy (GB) vol.10, no.6 375-81 1985 CODEN: IJHEDX
ISSN: 0360-3199
USCCC Code: 0360-3199/85$3.00+0.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
Very thin diaphragms (0.2 mm) having high mechanical and chemical stability against corrosion and dissolution in 40 wt.% KOH at temperatures up to 160 degrees C, were developed to exhibit low surface resistances (0.2 Omega cm/sup 2/) and high gas-separation properties. These diagrams are made of a highly porous cermet made of nickel and oxide ceramic particles which is supported by a woven nickel-net. The corrosion of the metal-screen is safely prevented during electrolyzer operation by a steady flow of H/sub 2/-saturated electrolyte across the diaphragm. The stability of the oxide ceramics is obtained from thermodynamic stability and low solubility in caustic potash. It is possible to produce integrated electrode-diaphragm sandwiches from these diaphragms by applying high porous nickel-layers on their faces by relatively sample sinter-techniques.
Desc.: cermets; electrolysis; electrolytes; hydrogen economy; polymers; water
Ident.: NiTiO/sub 3/ diaphragms; hydrogen economy; H/sub 2/ production; integrated electrode-diaphragm units; advanced alkaline water electrolysis; chemical stability; corrosion; KOH; low surface resistances; high gas-separation properties; metal-screen; electrolyzer operation; H/sub 2/-saturated electrolyte; thermodynamic stability; caustic potash
Class Codes: A8640K; A82?5

Y012013 8
1551889 A85121823
Ceramic microstructure and adhesion
Buckley, D.H.
NASA Lewis Research Center, Cleveland, OH, USA
J. Vac. Sci. & Technol. A (USA) vol.3, no.3, pt.1 762-71 May-June 1985 CODEN: JVTAD6
ISSN: 0734-2101
Proceedings of the 31st National Symposium of the American Vacuum Society
4-7 Dec. 1984 Reno NV, USA
USCCC Code: 0734-2101/85/030762-10$01.00
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (30 Refs)
When a ceramic is brought into contact with a ceramic, a polymer, or a metal, strong bond forces can develop between the materials. The bonding forces will depend upon the state of the surfaces, cleanliness and the fundamental properties of the two solids, both surface and bulk. Adhesion between a ceramic and another solid are discussed from a theoretical consideration of the nature of the surfaces and experimentally by relating bond forces to the interface resulting from solid state contact. Surface properties of ceramic correlated with adhesion include orientation, reconstruction, and diffusion as well as the chemistry of the surface species. Where a ceramic is in contact with a metal their interactive chemistry and bond strength is considered. Bulk properties examined include elastic and plastic behavior in the surficial regions, cohesive binding energies, crystal structures, and crystallographic orientation. Materials examined with respect to interfacial adhesive interactions include silicon carbide, nickel-zinc ferrite, manganese-zinc ferrite, and aluminium oxide. The surfaces of the containing solids are studied both in the atomic or molecularly clean state and in the presence of selected surface contaminants.
Desc.: adhesion; ceramics; interface structure; surface energy; surface structure
Ident.: ceramic interface; ceramic microstructure; surface orientation; surface reconstruction; surface diffusion; adhesion; bond forces; solid state contact; interactive chemistry; cohesive binding energies; crystal structures; crystallographic orientation; surface contaminants
Class Codes: A8190; A6820; A6840; A6848

Y012013 9
1544719 A85116358
The structure and properties of refractory zirconia ceramics. III. Studies of technical properties of materials and technological elaborations
Koehler, E.K.
Inst. of Silicate Chem., Acad. of Sci., Leningrad, USSR
Ceram. Int. (Italy) vol.11, no.1 3-12 Jan.-March 1985 CODEN: CINNDH
ISSN: 0272-8842
Treatment: BIBLIOGRAPHY; GENERAL, REVIEW
Doc. Type: JRNL PAP.
Lang.: ENG. (103 Refs)
For pt.II see ibid., vol.10, p.66 (1984). The use of zirconia and zirconia-containing materials in the various fields of engineering required a study of their appropriate properties. In the majority of cases the determination of these properties were made along with the general physical-chemical investigations of zirconia-containing oxide systems and related with the phase composition and structure of the material. For convenience of comparison of the results obtained, the papers have been grouped according the their main topics in the following subgroups: (1) thermal properties (refractoriness, thermal expansion coefficient, heat conduction, thermal shock resistance); (2) chemical properties (acid- and alkali resistance, wettability with various melts etc.); (3) mechanical properties at room and elevated temperatures; (4) electrical properties; (5) evaporation, high temperature-erosion; (6) optical, radiation properties, coatings, etc. The list of references in given in the general chronological order of the publication of papers.
Desc.: ceramics; environmental  degradation; high-temperature phenomena and effects; refractories; reviews; thermal expansion; thermal shock; zirconium compounds
Ident.: optical properties; ZrO/sub 2/; acid resistance; reviews; refractory ceramics; zirconia ceramics; technical properties; thermal properties; refractoriness; thermal expansion coefficient; heat conduction thermal shock resistance; chemical properties; alkali resistance; wettability; mechanical properties; electrical properties; evaporation; high temperature-erosion; radiation properties; coatings
Class Codes: A8120L; A8160D; A6570; A0130R

Y012013 10
1542708 A85108043, B85055733
Characterization of silicon oxynitride files prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon
Hezel, R.; Streb, W.
Inst. fur Werkstoffwissenschaften VI, Erlangen Univ., Nurnberg, Germany
Thin Solid Films (Switzerland) vol.124, no.1 35-41 1 Feb. 1985 CODEN: THSFAP
ISSN: 0040-6090
Sixth International Conference on 'Thin Films' 13-17 Aug. 1984 Stockholm, Sweden
USCCC Code: 0040-6090/85/$3.30
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (12 Refs)
Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out.
Desc.: Auger effect; electron energy loss spectra; insulating thin films; ion implantation; silicon compounds
Ident.: electron irradiation; SiO/sub x/N/sub y/ films; simultaneous implantation; Auger electron spectroscopy; electron energy loss spectroscopy; depth-concentration profiling; thermal stability; hardness; ion irradiation
Class Codes: A6855; A6170T; B2550E; B2550B

Y012013 11
1540881 B85060122
Improved potential grading methods with silicon carbide paints for high voltage coils
Kimura, K.; Hirabayashi, S.
Mitsubishi Electr. Corp., Amagsaki, Japan
IEEE Trans. Electr. Insul. (USA) vol.EI-20, no.3 511-17 June 1985 CODEN: IETIAX
ISSN: 0018-9367
USCCC Code: 0018-9367/85/0600-0511$01.00
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
Surface potentials and the accompanying thermal analysis on two improved potential grading methods with silicon carbide (SiC) paints for generator coils are presented. These methods are: (1) double-coating of SiC layers along a coil and (2) combination of a conducting intersheath and a SiC paint. Approximate equations describing the thermal behaviour for both methods are derived on the assumption of ideal nonlinear conductivity. The double-coating method shows effective regulation of local heating, although total heating is not suppressed. A simplified model of the combination method predicts a remarkable heat suppression effect, which is also verified with numerical calculation.
Desc.: AC generators; silicon compounds; stators
Ident.: surface potentials; stator coils; HV generators; silicon carbide paints; high voltage coils; thermal analysis; improved potential grading methods; generator coils; double-coating of SiC layers; conducting intersheath; Si paint; ideal nonlinear conductivity; double-coating method ; regulation of local heating; heat suppression effect numerical calculation
Class Codes: B8310

Y012013 12
1526218 A85103139
Interactions of nitric oxide with Si (111) and (100) at high temperatures
He, D.-R.; Smith, F.W.
Dept. of Phys., City Coll. of New York, NY, USA
Surf. Sci. (Netherlands) vol.154, no.2-3 347-56 May 1985 CODEN: SUSCAS
ISSN: 0039-6028
USCCC Code: 0039-6028/85/$03.30
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (15 Refs)
The interactions of nitric oxide (NO) with the clean Si (111) and (100) surfaces have been studied at high temperatures (1220-1390 degrees C) for NO pressures between 6*10/sup -6/ and 2*10/sup -4/ Torr. Growth of silicon nitride has been observed for high NO pressures P (NO) and low substrate temperatures T/sub s/, while for low values of P (NO) and high values of T/sub s/, the volatile products N/sub 2/ and SiO are formed, so that an active Si surface is maintained. The NO molecule is found to be extremely reactive with the clean Si surface at high T/sub s/, with an essentially unit probability for the production of one volatile SiO molecule per incident NO molecule. The growth of a silicon nitride film is observed to occur for values of P (NO) well below those predicted from thermodynamics. It is proposed that this result is due either to the strong bonding of N atoms to the Si surface or to the initial growth of a surface phase (Si/sub x/N/sub y/) which has a lower free energy than Si/sub 3/N/sub 4/.
Desc.: bonds (chemical); elemental semiconductors; high-temperature phenomena and effects; nitrogen compounds; silicon; silicon compounds; surface chemistry
Ident.: Si (100); semiconductor; NO interactions; Si/sub 3/N/sub 4/ growth; thermal nitridation; Si (111); high temperatures; volatile products ; active Si surface; thermodynamics; strong bonding; surface phase; free energy
Class Codes: A8265J; A6855; A8160C

Y012013 13
1510810 A85091658
Friction and wear properties of monolithic silicon-based ceramics
Cranmer, D.C.
Bendix Adv. Technol. Center, Columbia, MD, USA
J. Mater. Sci. (GB) vol.20, no.6 2029-37 June 1985 CODEN: JMTSAS
ISSN: 0022-2461
USCCC Code: 0022-2461/85$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
Friction and wear properties of two forms of silicon nitride (reaction bonded and hot pressed) and two of silicon carbide (reaction sintered and sintered) are reported. The materials were slid against themselves under unlubricated conditions. Tests were run using a simulated inertial sample dynamometer. Sliding speeds ranged from 0.5 to 5.5 m sec/sup -1/ with applied loads of 225 or 450 N. Friction coefficients were found to be in the range of 0.15 to 0.8 for both types of material. Friction response was qualitatively correlated with changes in surface chemistry at the sliding interface. Wear rates were of the order of 10/sup -14/ to 10/sup -13/ m/sup 3/ (N m)/sup -1/, in order-of-magnitude agreement with previous pin-on-disc results reported in the literature. Wear surface exhibit plastic deformation, ploughing, and oxide film formation and removal.
Desc.: ceramics; friction; silicon compounds; surface structure; wear
Ident.: monolithic Si-based ceramics; hot pressing; reaction sintering; friction coefficients; Si/sub 3/N/sub 4/; SiC; wear properties; surface chemistry; sliding interface; plastic deformation; oxide film formation
Class Codes: A8140P; A6820; A6220P

Y012013 14
1510747 A85091595
Ultrasonic examination of reaction bonded silicon nitride
Thorp, J.S.; Bushell, T.G.
Dept. of Appl. Phys. & Electron., Durham Univ., England
J. Mater. Sci. (GB) vol.20, no.6 2265-74 June 1985 CODEN: JMTSAS
ISSN: 0022-2461
USCCC Code: 0022-2461/85$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
An ultrasonic examination has been made of a series of partially nitrided reaction-bonded silicon nitride (RBSN) ceramics whose weight gains varied from 22% to nearly 64% representing full nitridation. A pulse echo overlap technique was used which enabled both the longitudinal and shear velocities of propagation to be measured at 15 MHz; from these measurements values of Young's modulus (E) and the bulk modulus (K) at room temperature were derived. For fully nitrided RBSN the values obtained were E=160 GN m/sup -2/, K=90 GN m/sup -2/ in good agreement with published values obtained by ultrasonic methods. Both Young's modulus and the bulk modulus were found to be markedly sensitive to the changes in fractional porosity due to changes in weight gain (and green density) each decreasing by over 50% as the fractional porosity increased from 0.16 for a fully nitrided ceramic to 0.26 for 60% weight gain material.
Desc.: ceramics; elastic moduli; materials preparation; porosity; silicon compounds; ultrasonic velocity; Young's modulus
Ident.: partially nitrided reaction bonded Si/sub 3/N/sub 4/ ceramics; ultrasonic examination; pulse echo overlap technique; shear velocities; Young's modulus; bulk modulus; fractional porosity; weight gain ; green density
Class Codes: A8140J; A6220D; A6265; A8120E; A8120L

Y012013 15
1508495 A85089228
FTIR matrix isolation study of carbon-13 substituted SiC/sub 2/
Shepherd, R.A.; Graham, W.R.M.
Dept. of Phys., Texas Christian Univ., Fort Worth, TX, USA 
J. Chem. Phys. (USA) vol.82, no.11 4788-90 1 June 1985 CODEN: JCPSA6
ISSN: 0021-9606
USCCC Code: 0021-9606/85/114788-03$02.10
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
The products from vaporizing silicon carbide at 2900K and quenching in argon at  8K have been studied using Fourier transform infrared spectroscopy. Under the assumption of various possible geometries, calculations based on two vibrations observed at 1741.1 and 824.4 cm/sup -1/ were made to predict frequencies for SiC/sub 2/ singly and doubly substituted with carbon-13. Comparison with the spectra observed no isotopic substitution shows conclusively that these vibrations belong to SiC/sub 2/, and that the molecule is cyclic (i.e. possesses C/sub 2v/ symmetry) in the ground state. This geometry is in agreement with recent results from a rotational analysis of the band system at 500 nm. Force constants derived in the present study suggest that the silicon atom is singly bonded to two doubly bonded carbon atoms.
Desc.: Fourier transform spectroscopy; infrared spectra of polyatomic inorganic molecules; isotope shifts; matrix isolation spectra; molecular forcw constants; molecular vibration; organic molecule configurations; silicon compounds
Ident.: matrix isolation spectra; FTIR spectroscopy; SiC/sub 2/; quenching; Fourier transform infrared spectroscopy; vibrations; isotopic substitution; C/sub 2v/ symmetry; ground state; rotational analysis
Class Codes: A3320E; A3310G; A3520B; A35?0P; A3370J

Y012013 16
1498894 A85086828
Iron impurities in Si/sub 3/N/sub 4/ processing
Bouldin, C.E.; Stern, E.A.; Donley, M.S.; Stoebe, T.G.
Dept. of Phys., Washington Univ., Seattle, WA, USA
J. Mater. Sci. (GB) vol.20, no.5 1807-14 May 1985 CODEN: JMTSAS
ISSN: 0022-2461
USCCC Code: 0022-2461/85$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
The atomic environment of iron impurities is investigated during the processing cycle of reaction-bonding silicon nitride (RBSN). Several analysis techniques are utilized, including X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), and electron spin resonance (ESR), to examine iron impurities in the starting silicon powder, in sintered silicon compacts, and in RBSN materials. Results indicate that iron impurities in as-received metallurgical grade silicon powder are incorporated in the silicon bulk as a highly distorted FeSi/sub 2/ compound. No surface iron or iron-based particulate is observed in the starting material. Upon sintering, the iron environment becomes an ordered FeSi/sub 2/ structure. In the RBNS material, the FeSi/sub 2/ structure is again distorted, as observed by both EXAFS and ESR.
Desc.: EXAFS; impurities; paramagnetic resonance of iron group ions and impurities; silicon compounds; sintering; X-ray photoelectron spectra
Ident.: Fe impurities; reaction bonding Si/sub 3/N/sub 4/; Si powder ; sintered Si compacts; atomic environment; processing cycle; X-ray photoelectron spectroscopy; extended X-ray absorption fine structure; electron spin resonance; highly distorted FeSi/sub 2/ compound; sintering; ordered FeSi/sub 2/ structure
Class Codes: A8120L; A8120E; A7870D; A6170W; A7630F

Y012013 17
1494945 A85082014
Melting and solidification of metal matrix composites under microgravity
Froyen, L.; Deruyttere, A.
Katholieke Univ. Leuven, Belgium
Sponsor: German Aerosp. Res. Establ.; ES
5th European Symposium on Material Sciences under Microgravity - Results of Spacelab-1 (ESA-SP-222) 69-78 1984
5-7 Nov. 1984 Schloss Elmau, Germany
Publ: ESA, Paris, France
xix+470 pp.
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (9 Refs)
During the SL1-mission six particulate composites with Al-matrix were melted, held during 40 min at 800 degrees C and solidified in the isothermal heating facility (experiment 1ES 315/1). On comparison with the ground processed reference samples it appears that the space processed samples are much more homogeneous, both in the case of coarse and of fine dispersed particles. This higher homogeneity leads naturally to an important increase of the uniformity of the macro-Vickers hardness. It also appears that the abrasive wear resistance of the Al-SiC composite after melting and solidification in space is as good as in samples prepared by powder metallurgy. The particle rearrangements in the 1 g-reference and the mu g-samples can be explained on the basis of interfacial energy considerations besides sedimentation and convection.
Desc.: abrasion; alumina; aluminium; composite material interfaces crystal microstructure; dispersion hardening; hardness; melting; particle reinforced composites; silicon compounds; solidification; zero gravity experiments
Ident.: Al-Al/sub 2/O/sub 3/ composite; coarse particles; metal matrix composites; microgravity; SL1-mission; l-matrix; ground processed reference samples; space processed samples; fine dispersed particles; higher homogeneity; macro-Vickers hardness; abrasive wear resistance; Al-SiC composite; melting; solidification; powder metallurgy; particle rearrangements; interfacial energy; sedimentation; convection
Class Codes: A8130F; A8140C; A8140P; A6220P; A8180; A6220M; A6470D; A8120J; A8140N

Y012013 18
1483120 A85077070
Ion-exchange treatment of silicon-yttria dispersions
Crosbie, G.M.
Ford Motor Co., Dearborn, MI, USA
J. Am. Ceram. Soc. (USA) vol.68, no.3 C-83-4 March 1985 CODEN: JACTAW
ISSN: 0002-7820
USCCC Code: 0002-7820/85$2.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (6 Refs)
Improved rheological stability in silicon-yttria slurries for sinterable reaction-bonded silicon nitride was obtained by treating casting slips with NH/sub 4//sup +/-ion-exchange resin. The substitution of NH/sub 4//sup +/ ions for flocculating ions (Ca/sup 2+/ or Y/sup 3+/) appears to be the principal factor leading to more time-stable pseudoplastic yield stress and viscosities.
Desc.: ceramics; ion exchange; powder technology; silicon; silicon compounds; yttrium compounds
Ident.: reaction-bonded Si/sub 3/N/sub 4/; ceramics; ion exchange treatment; powder technology; Si-Y/sub 2/O/sub 3/ dispersions; rheological stability; casting slips; NH/sub 4//sup +/-ion-exchange resin; pseudoplastic yield stress; viscosities
Class Codes: A8120L; A8120E; A8230H

Y012013 19
1463238 A85065367
Synthesis and characterization of phosphides as potential novel infrared (IR) transmitting materials
Covino, J.
Dept. of Res., Naval Weapons Center, China Lake, CA, USA
Sponsor: SPIE
Proc. SPIE Int. Soc. Opt. Eng. (USA) vol.505 35-41 1984 CODEN: PSISDG
ISSN: 0277-786X
Advances in Optical Materials 21-24 Aug. 1984 San Diego, CA, USA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (18 Refs)
Binary and ternary phosphides have recently been identified in the author's laboratory as promising classes of materials which can be used as potential novel infrared (IR) transmitting ceramics. These materials might be employed in the 8-12 mu m region and in environments involving severe thermal and mechanical stresses. In this presentation the current status of research and developing technologies involving these materials is summarized. Initial target materials selected for study include ZnP/sub 2/, ZnSiP/sub 2/, ZnZrP/sub 2/, ZnGeP/sub 2/ and mixed systems of the latter three compounds. Preliminary synthesis and characterization efforts are described. Characterization techniques used to data include: Fourier Transform Infrared (FTIR) spectroscopy, X-ray powder diffraction, elemental analyses, thermogravimetric analyses, and microhardness determination. Data from these measurements are presented. Problems involved in sample preparation and impurity content are reviewed. Potential problems in processing these materials and in their use as IR transmitting ceramics are also discussed.
Desc.: ceramics; Fourier transform spectroscopy; hardness; infrared spectra of inorganic solids; optical materials; reflectivity; thermal analysis; X-ray diffraction examination of materials; zinc compounds
Ident.: potential novel IR transmitting ceramics; binary phosphides severe thermal stress; Fourier transform IR spectroscopy; covalent metal-P bonds; characterization; ternary phosphides; mechanical stresses; ZnP/sub 2/; ZnSiP/sub 2/; ZnZrP/sub 2/; ZnGeP/sub 2/; mixed systems; synthesis; X-ray powder diffraction; elemental analyses; thermogravimetric analyses; microhardness determination; sample preparation; impurity content; IR transmitting ceramics
Class Codes: A4270F; A7820D; A7830G; A6220M

Y012013 20
1460650 A85062180
PROPERTIES OF ACTIVATED-SI/SUB 3/N/SUB 4/ POWDERS-EXPLOSIVE SHOCK WAVE AND FINE GRINDING
KANNO, Y.; KUAHARA, Y.; FUJIWARA, S.
GOV. IND. RES. INST., NAGOYA, JAPAN
YOGYO-KYOKAI-SHI (JAPAN) VOL.92, NO.11 617-21 1984 CODEN: YGKSA4
ISSN: 0009-0255
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: JAPANESE (10 Refs)
PHYSICAL AND CHEMICAL PROPERTIES OF SILICON NITRIDE POWDERS TREATED BY EXPLOSIVE SHOCK WAVE (100 KBAR, 300 KBAR) AND FINE GRINDING WERE INVESTIGATED BY X-RAY DIFFRACTION ANALYSIS AND TEMPERATURE-PROGRAMMED DESORPTION. THE SURFACE ACTIVITY OF THE ACTIVATED-POWDERS, AS DETERMINED BY THE TEMPERATURE-PROGRAMMED ADESORPTION OF NH/SUB 3/, WAS HIGHEST WITH 300 KBAR SHOCK WAVE. IT IS SHOWN THAT THE FINE GRINDING PROMOTES FRAGMENTATION FO CRYSTALLITES RATHER THAN LATTICE STRAIN. EXPLOSIVE SHOCK WAVE OF 100 KBAR INCREASED ONLY THE LATTIC STRAIN, WHILE THAT OF 300 KBAR PROMOTED FRAGMENTATION OF CRYSTALLITES AND AN INCREASE OF LATTICE STRAIN. THE SPECIFIC SURFACE AREA INDICATED THAT THE SINTERING OF SILICON NITRIDE POWDERS IS ACCELERATED BY THE EXPLOSIVE SHOCK WAVE.
Desc.: SILICON COMPOUNDS; POWDER TECHNOLOGY; SHOCK WAVE EFFECTS; X-RAY DIFFRACTION EXAMINATION OF MATERIALS; CRYSTALLITES; CERAMICS
Ident.: ACTIVATED-SI/SUB 3/N/SUB 4/ POWDERS; FINE GRINDING; CHEMICAL PROPERTIES; EXPLOSIVE SHOCK WAVE; X-RAY DIFFRACTION ANALYSIS; SURFACE ACTIVITY; FRAGMENTATION; CRYSTALLITES; LATTICE STRAIN; SPECIFIC SURFACE AREA; SINTERING
Class Codes: A8120L; A8120E; A6250

Y012013 21
1460637 A85062167
AUGER ANALYSIS OF HOT-PRESSED AND SINTERED SILICON CARBIDE
SHERMAN, R.
SOUTHWEST RES. INST., SAN ANTONIO, TX, USA
J. AM. CERAM. SOC. (USA) VOL.68, NO.1 C7-10 JAN. 1985 CODEN: JACTAW
ISSN: 0002-7820
USCCC Code: 0002-7820/84$2.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: ENG. (15 Refs)
INTERGRANULAR AND TRANSGRANULAR CHEMISTRIES OF HOT-PRESSED AND SINTERED SILICON CARBIDES WERE INVESTIGATED BY AUGER ELECTRON SPECTROSCOPY. RESULTS INDICATED MAJOR DIFFERENCES IN GRAIN-BOUNDARY COMPOSITIONS BETWEEN THE TWO. HOT-PRESSED SILICON CARBIDE DISPLAYED A COMPLEX INTERGRANULAR CHEMISTRY. SINTERED SILICON CARBIDED DISPLAYED GRAIN FACETS THAT WERE FREE OF IMPURITIES AND ADDITIVES. THE OBSERVED INTERGRANULAR CHEMISTRIES FOR BOTH SILICON CARBIDES ARE DISCUSSED IN TERMS OF THEIR RELATION TO THE PROCESSING METHODS.
Desc.: SILICON COMPOUNDS; GRAIN BOUNDARIES; AUGER EFFECT; HOT PRESSING; SINTERING; POWDER TECHNOLOGY; CERAMICS
Ident.: HOT PRESSED SIC; SINTERED SIC; TRANSGRANULAR CHEMISTRIES; AUGER ELECTRON SPECTROSCOPY; GRAIN-BOUNDARY COMPOSITIONS; COMPLEX INTERGRANULAR CHEMISTRY; GRAIN FACETS; PROCESSING METHODS
Class Codes: A8120L; A8120E; A6170N; A7920?

Y012013 22
1447759 A85056137
THE INFLUENCE OF HIGH PRESSURES ON BEHAVIOUR OF IONIC-COVALENT COMPOUNDS
TIMOFEYEVA I.I.; RISTIC, M.M.
INST. FOR PROBLEMS OF MATER. SCI., ACAD. OF SCI., KIEV, UKRAINIAN SSR
UPADHYAYA, G.S. (Editors)
SINTERED METAL-CERAMIC COMPOSITES. PROCEEDINGS OF THE THIRD INTERNATIONAL SCHOOL ON SINTERED MATERIALS 19-24 1984 6-9 DEC. 1983 NEW DELHI, INDIA
Publ: ELSEVIER, AMSTERDAM, NETHERLANDS X+540 pp. ISBN 0 44 42401 6
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (15 Refs)
THE CONSOLIDATION PROCESS OF OXIDE AND CARBIDE POWDERS CARRIED OUT UNDER THE INFLUENCE OF HIGH PRESSURES, HAS BEEN INVESTIGATED. BOTH THE STRUCTURE AND PHYSICO-CHEMICAL PROPERTIES OF OBTAINED SAMPLES HAVE BEEN THOROUGHLY STUDIED. THE OBTAINED RESULTS ENABLE SOME OF THE PROPERTIES OF INVESTIGATED PHASES TO BE GENERALIZED.
Desc.: POWDER TECHNOLOGY; DENSIFICATION; CERAMICS; HIGH-PRESSURE EFFECTS IN SOLIDS; HIGH-PRESSURE EFFECTS IN SOLIDS; DENSIFICATION; CERAMICS ; POWDER TECHNOLOGY
Ident.: OXIDE POWDERS; POWDER TECHNOLOGY; PHYSICOCHEMICAL PROPERTIES ; DENSIFICATION; HIGH PRESSURES; IONIC-COVALENT COMPOUNDS; CONSOLIDATION; CARBIDE POWDERS
Class Codes: A8120L; A8120E

Y012013 23
1442598 A85050048, B85022551
CERAMICS AS ENGINEERING MATERIALS: STRUCTURE-PROPERTY-PROCESSING
BOWEN, H.K.
MATER. PROCESS. CENTER, MIT, CAMBRIDGE, MA, USA
CRAWFORD, J.H., JR.; CHEN, Y.; SIBLEY, W.A. (Editors)
Sponsor: U.S. ARMY RES. OFFICE
DEFECT PROPERTIES AND PROCESSING OF HIGH-TECHNOLOGY NONMETALLIC MATERIALS. PROCEEDINGS OF THE SYMPOSIUM 1-11 1984 14-17 NOV. 1983 BOSTON, MA, USA
Publ: NORTH-HOLLAND, NEW YORK, USA
XV+482 pp. ISBN 0 444 00904 3 
Treatment: APPLIC; GENERAL, REVIEW
Doc. Type: CONF. PAP.
Lang.: Eng. (21 Refs)
THERE ARE MANY NEW APPLICATIONS OF CERAMICS IN HIGH TECHNOLOGY ENGINEERING SYSTEMS WHICH WILL RESULT IN SIGNIFICANT GROWTH OF THE CERAMICS BUSINESS IF THE MATERIALS RESEARCH TRIAD STRUCTURE-PROPERTY-PROCESSING MOVES FROM THE LABORATORY TO THE MANUFACTURING PLANT. THIRTY YEARS OF RESEARCH HAVE SHOWN THAT THE CRITICAL PHYSICAL/CHEMICAL PROPERTIES ARE STRONGLY RELATED TO THE STRUCTURE ON ONE OR MORE LEVELS: FEW ANGSTROMS-CRYSTAL STRUCTURE AND PHASES; 10-100 AA-BOUNDARY OR GRAIN BOUNDARY LAYERS OR PHASES; 1 MUM-MICROSTRUCTURE (GRAIN SIZE, PYROSITY, INTERPENETRATING PHASES, ETC.); AND MACRO-STRUCTURE INCLUDING JOINING, SHAPE AND DIMENSIONAL TOLERANCES. THE MAJOR FOCUS OF THIS OVERVIEW RELATES TO ISSUES OF RELIABILITY AND REPRODUCIBILITY IN PROCESSING POLYCRYSTALLINE CERAMICS AND THE RELATIONSHIP BETWEEN PROCESSING AND THE CONTROL OF THE STRUCTURE AND PROPERTIES. EXAMPLES CONSIDERED ARE THOSE OF HIGH VALUE-ADDED COMPONENTS WHERE DESIGN AND FUNCTIONALITY JUSTIFY IMPROVED MATERIAL CHARACTERISTICS.
Desc.: CERAMICS; CRYSTAL MICROSTRUCTURE; REVIEWS
Ident.: CERAMICS; STRUCTURE; PROPERTY; PROCESSING; BOUNDARY LAYERS; ENGINEERING MATERIALS; STRUCTURE; CRYSTAL STRUCTURE; GRAIN BOUNDARY LAYERS MICROSTRUCTURE; RELIABILITY; REPRODUCIBILITY; POLYCRYSTALLINE; DESIGN; FUNCTIONALITY; MATERIAL CHARACTERISTICS
Class Codes: A8120; A8130; B0540

Y012013 24
1425037 A85039369
DIRECT PRECIPITATION OF LEAD ZIRCONATE TITANATE BY THE HYDROTHERMAL METHOD
KUTTY, T.R.N.; BALACHANDRAN, R.
DEPT. OF INORG. AND PHYS. CHEM., INDIAN INST. OF SCI., BANGALORE, INDIA
MATER. RES. BULL. (USA) VOL.19, NO.11 1479-88 NOV. 1984 CODEN: MRBUAC
ISSN: 0025-5408
USCCC Code: 0025-5408/84$3.00+.00
Treatment: PRACTICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (17 Refs)
DIRECT PRECIPITATION OF FINE POWDERS OF LEAD ZIRCONATE TITANATE (PZT) IN THE COMPLETE RANGE OF SOLID SOLUTION IS INVESTIGATED UNDER HYDROTHERMAL CONDITIONS, STARTING FROM LEAD OXIDE AND TITANIA/ZIRCONIA MIXED GELS. THE PEROVSKITE PHASE IS FORMED IN THE TEMPERATURE RANGE OF 165-340 DEGREESC. SEQUENCE OF THE HYDROTHERMAL REACTIONS IS STUDIED BY IDENTIFYING THE INTERMEDIATE PHASES. THE INITIAL FORMATION OF PBO: TI /SUB 2/ SOLID SOLUTION IS FOLLOWED BY THE REACTION OF THE SAME WITH THE REMAINING MIXED GELS GIVING RISE TO X-RAY AMORPHOUS PZT PHASE. FURTHER, THROUGH CRYSTALLITE GROWTH, THE X-RAY CRYSTALLINE PZT IS FORMED. THIS METHOD CAN BE EXTENDED FOR THE PREPARATION OF PLZT POWDER AS WELL. THE RESULTING POWDERS ARE SINTERABLE TO HIGH DENSITY CERAMICS.
Desc.: LEAD COMPOUNDS; SOLID SOLUTIONS; PRECIPITATION (PHYSICAL CHEMISTRY); CRYSTAL GROWTH FROM GEL
Ident.: SINTERING; DIRECT PRECIPITATION; HYDROTHERMAL PRECIPITATION TIO/SUB 2/-ZRO/SUB 2/-H/SUB 2/O MIXED GELS; PBO; P (ZR/SUB X/TI/SUB 1-X/)O/SUB 3/; PZT; SOLID SOLUTION; PEROVSKITE PHASE; INTERMEDIATE PHASES; PBO: TIO/SUB 2/ SOLID SOLUTION; CRYSTALLITE GROWTH; HIGH DENSITY CERAMICS
Class Codes: A8110D

Y012013 25
1411859 A85034291
EFFECT OF HOT ISOSTATIC PRESSING ON REACTION-BONDED SILICON NITRIDE
WATSON, G.K.; MOORE, T.J.; MILLARD, M.L.
LEWIS RES. CENTER, NASA, CLEVELAND, OH, USA
J. AM. CERAM. SOC. (USA) VOL.67, NO.10 208-10 OCT. 1984 CODEN: JACTAW
ISSN: 0002-7820
USCCC Code: 0002-7820/84$2.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
REACTION-BONDED SILICON NITRIDE WAS ISOSTATICALLY HOT-PRESSED UNDER 138 MPA FOR 2 H AT 1850 DEGREES, 1950 DEGREES, OR 2050 DEGREESC, NEARLY THEORETICALLY DENSE SPECIMENS RESULT. THE ROOM-TEMPERATURE FLEXURAL STRENGTH MORE THAN DOUBLED, BUT THE 1200 DEGREESC FLEXURAL STRENGTH INCREASED SIGNIFICANTLY ONLY AFTER PRESSING AT 2050 DEGREESC (=35PERCENT IMPROVEMENT). AN AMORPHOUS PHASE INTRODUCED BY HOT ISOSTATIC PRESSING ACCOUNTS IN PART FOR THESE RESULTS.
Desc.: SILICON COMPOUNDS; HOT  PRESSING; BENDING STRENGTH; DENSIFICATION; DENSITY OF SOLIDS
Ident.: REACTION BONDED SI/SUB 3/N/SUB 4/; HOT ISOSTATIC PRESSING; ROOM-TEMPERATURE FLEXURAL STRENGTH; AMORPHOUS PHASE
Class Codes: A8120L; A8120E; A6220F; A8140L

Y012013 26
1411212 A85033454
ELECTRONIC STRUCTURE OF AMORPHOUS SI/SUB 3/N/SUB 4/
BRYTOV, I.A.; GRITSENKO, V.A.; KOSTIKOV, YU.P.; OBOLENSKII, E.A.; ROMASHCHENKO, YU.N.
FIZ. TVERD. TELA (USSR) VOL.26, NO.6 1681-90 JUNE 1984 CODEN: FTVTAC
ISSN: 0367-3294
Trans in: SOV. PHYS.-SOLID STATE (USA) VOL.26, NO.6 1022-5 JUN 1984 CODEN: SPSSA7
ISSN: 0038-5654
USCCC Code: 0038-5654/84/061022-04$03.90
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (25 Refs)
FOR AMORPHOUS SILICON NITRIDE (A-SI/SUB 3/N/SUB 4/) THE AUTHORS HAVE OBTAINED THE VALENCE-BAND SPECTRUM, USING ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS, AS WELL AS A COMPLETE SET OF X-RAY EMISSION SPECTRA AND THE QUANTUM YIELD OF SI AND N. THE K SPECTRA OF SI WERE MEASURED ON AN SARF-1 X-RAY FLUORESCENCE SPECTROMETER WHILE THE L/SUB 2, 3/ SPECTRA OF SI AND K SPECTRA OF N WERE OBTAINED ON AN RSM-500 X-RAY SPECTROMETER-MONOCHROMATOR WITH A SPHERICAL BRAZING-INCIDENCE GRATING. ANALYSIS OF THE EXPERIMENTAL RESULTS, IN COMPARISON WITH THE DATA IN THE LITERATURE ON THE CALCULATION OF THE ELECTRONIC STRUCTURE OF SI/SUB 3/N/SUB 4/ SHOWED THE FOLLOWING: IN THE ENERGY REGION (RELATIVE TO THE VACUUM LEVEL) -25.6 TO -23.0 EV LIE THE WEAKLY BOUND LEVELS, THE MAIN CONTRIBUTION TO WHICH IS MADE BY THE 2S-AO OF N WITH THE IMPURITY 3S, P-AO OF SI; NEXT (-16 EV, -12 EV) FOLLOW LEVELS REFLECTING THE SIGMA-BOND RESULTING FROM THE INTERACTION OF THE 3S- AND 3P/SUB SIGMA/-AO WITH THE 2P/SUB SIGMA/-AO OF N; AT THE TOP OF THE VALENCE BAN  (-8.8 EV) IS A LEVEL CONSISTING MAINLY OF 2P-AO OF N; THE LOWEST VACANT STATES (-2.4 EV AND -0.8 EV) FORMED THROUGH HYBRIDIZATION OF VACANT 3D-AO OF SI WITH 2P-AO OF N AND 3S-AO OF SI WITH 2P-AO OF N, RESPECTIVELY; THE TOP OF THE VALENCE BAND LIES AT THE DEPTH OF -6.8 EV; THE FORBIDDEN GAP WIDTH IS DELTAE/SUB F/=4.8 EV. IT HAS BEEN FOUND THAT THE MAXIMUM (OF AN INTENSITY LOWER BY A FACTOR OF =10 THAN THAT OF THE PRINCIPAL MAXIMUM OF THE SI L/SUB 2, 3/ BAND), WHICH LIES ENERGETICALLY IN THE FORBIDDEN GAP (-3.7 EV) AND IS OBSERVED ON THE SHORT-WAVE SIDE OF THE L/SUB 2, 3/ EMISSION SPECTRUM, MOST LIKELY REFLECTS OCCUPIED STATES SPLIT OFF FROM THE MAIN BAND AND GENETICALLY RELATED TO SI 3D STATES. THE LOWEST VACANT LEVEL (-2.4 EV) ALSO FALLS IN THE FORBIDDEN BAND.
Desc.: ELECTRON ENERGY STATES OF AMORPHOUS SOLIDS; ELECTRON SPECTRA ; VALENCE BANDS; X-RAY EMISSION SPECTRA; SILICON COMPOUNDS; IMPURITY ELECTRON STATES
Ident.: E?CA; X-RAY EMISSION SPECTRA; AMORPHOUS SI/SUB 3/N/SUB 4/; VALENCE-BAND SPECTRUM; QUANTUM YIELD; ELECTRONIC STRUCTURE; WEAKLY BOUND LEVELS; IMPURITY; FORBIDDEN GAP WIDTH
Class Codes: A7125M; A7155H; A7870E

Y012013 27
1406601 85028403
MICROANALYTICAL AND MICROSTRUCTURAL ANALYSES OF BORON AND ALUMINUM REGIONS IN SINTERED ALPHA SILICON CARBIDE
DAVIS, R.F.; LANE, J.E.; CARTER, C.H., JR.; BENTLEY, J.; WADLIN, W.H.; GRIFFIS, D.P.; LINTON, R.W.; MORE, K.L.
DEPT. OF MATER. ENG., NORTH CAROLINA STATE UNIV., RAYLEIGH, NC, USA;
SCANNING ELECTRON MICRSC. (USA) PT.3 1161-7 1984 CODEN: SEMYBL
ISSN: 0586-5581
USCCC Code: 0586-581/84$1.00+.05
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
ADDITIONS OF B- OR AL-CONTAINING SUBSTANCES ARE COMMONLY ADDED TO SIC TO ENHANCE THE DENSIFICATION OF FINELY DIVIDED PARTICULATE COMPACTS WHICH HAVE BEEN PREVIOUSLY MOLDED INTO A DESIRED SHAPE. THE PRESENCE OF THESE ADDITIVES, THEIR COMPOSITION AND MICROSTRUCTURAL RELATIONSHIPS WITH THE SIC MATRIX, HAVE BEEN INVESTIGATED USING SECONDARY ION MICROSCOPY, AUGER ELECTRON SPECTROSCOPY AND TRANSMISSION ELECTRON MICROSCOPY TECHNIQUES. IN THE SIC HAVING B AS THE PRIMARY SINTERING AID, LARGE PARTICLES OF B/SUB 4/C CONTAINING SOME SI WERE FOUND IN THE MATRIX. IN ADDITION, ELEMENTAL B PRECIPITATED WITHIN THE SIC GRAINS. THE AL-CONTAINING SAMPLES POSSESSED MATRIX GRAINS HAVING AL, B, C, AND SI AS A PART OF THEIR COMPOSITION.
Desc.: SILICON COMPOUNDS; CERAMICS; SINTERING; PRECIPITATION; SECONDARY ION EMISSION; AUGER EFFECT; TRANSMISSION ELECTRON MICROSCOPE EXAMINATION OF MATERIALS
Ident.: B REGIONS; AL REGIONS; SINTERED ALPHA SIC; B/SUB 4/C PARTICLES; PRECIPITATION; MICROANALYSIS; MICROSTRUCTERAL ANALYSES; DENSIFICATION; PARTICULATE COMPACTS; SIC MATRIX; SECONDARY ION MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; PRIMARY SINTERING AID; MATRIX GRAINS
Class Codes: A8120L; A8120E; A7920N; A8?30M; A7920F; A6475

Y012013 28
1406522 A85028324, B85012209
PREPARATIONS AND PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED FROM REACTIVE PLASMA OF SIH/SUB 4/ AND N/SUB 2/
FUJITA, S.; ZHOU, N.-S.; SASAKI, A.
DEPT. OF ELECTR. ENG., KYOTO UNIV., JAPAN
TAKAGI, T. (Editors)
Sponsor: INST. ELECTR. ENG. JAPAN
PROCEEDINGS OF THE INTERNATIONAL ION ENGINEERING CONGRESS. THE 7TH SYMPOSIUM (1983 INTERNATIONAL) ON ION SOURCES AND ION ASSISTED TECHNOLOGY (ISIAT '83) AND THE 4TH INTERNATIONAL CONF. ON ION AND PLASMA ASSISTED TECHNIQUES (IPAT '83) 1351-6 VOL.2 1983
12-16 SEPT. 1983 KYOTO, JAPAN
Publ: INT. ION ENG. CONGRESS, KYOTO, JAPAN
3 VOL. 1989 pp. 
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (14 Refs)
SILICON NITRIDE FILMS ARE DEPOSITED FROM THE REACTIVE PLASMA OF SIH/SUB 4/ AND N/SUB 2/. THEIR CHEMICAL, OPTICAL, AND ELECTRICAL PROPERTIES ARE INVESTIGATED IN TERMS OF THE DEPOSITION CONDITIONS. THE AMMONIA-FREE SILICON NITRIDE EXHIBITS (I) LESS HYDROGEN, (II) HIGHER THERMAL ENDURANCE, (III) HIGHER DENSITY, (IV) SMALLER ETCHING RATE, AND (V) HIGHER BREAKDOWN STRENGTH THAN THE FILM DEPOSITED FROM THE REACTIVE PLASMA OF SIH/SUB 4/ AND NH/SUB 3/. THESE PROPERTIES WOULD BE USEFUL FOR VLSI APPLICATIONS.
Desc.: PLASMA DEPOSITION; PLASMA DEPOSITED COATINGS; CVD COATINGS; CHEMICAL VAPOUR DEPOSITION; SILICON COMPOUNDS; PASSIVATION; INSULATING THIN FILMS; VLSI; INTEGRATED CIRCUIT TECHNOLOGY OPTICAL PROPERTIES OF SUBSTANCES
Ident.: REACTIVE PLASMA DEPOSITION; CHEMICAL PROPERTIES; SIH/SUB 4?+N/SUB 2/ PLASMA; SIN FILM; OPTICAL PROPERTIES; FILM DEPOSITION; PASSIVATION; PLASMA CVD; ELECTRICAL PROPERTIES; DEPOSITION CONDITIONS; VL?I
Class Codes: A8115H; A7865J; A7360H; B2550E; B0520F; B2570

Y012013 29
1399122 A85022924, B85012193
AUGER AND ESCA DEPTH PROFILING OF SILICON-NITRIDE FILMS AFTER OXIDATION
ZHDAN, P.A.; NIZOVSKII, A.I.; RZHANOV, A.V.; EDEL'MAN, F.L.
INST. OF CATALYSIS, ACAD. OF SCI., USSR
DOKL. AKAD. NAUK SSSR VOL.273, NO.1-3 334-6 NOV. 1983 CODEN: DANKAS
ISSN: 0002-3264
Trans in: SOV. PHYS.-DOKL. (USA) VOL.28, NO.11 964-5 NOV. 1983 CODEN: SPHD?9
ISSN: 0038-5689
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
THE AUTHORS SHOWN THAT AT HIGH TEMPERATURES, THE OXIDATION OF SI/SUB 3/N/SUB 4/ TO SIO/SUB 2/ AND THE PENETRATION OF OXYGEN INTO THE SI/SUB 3/N/SUB 4/ WITH THE FORMATION OF SILICON OXYNITRIDES, OCCUR SIMULTANEOUSLY, THE SECOND PROCESS BEING CONTROLLED BY DIFFUSION KINETICS. A LAYER-BY-LAYER SPECTROSCOPIC ANALYSIS HAS BEEN CARRIED OUT OF SILICON-NITRIDE FILMS DEPOSITED ON SINGLE-CRYSTAL SILICON AT 830 DEGREESC BY AMMONOLYSIS OF SILANE IN A LOW PRESSURE REACTOR. THE THICKNESS OF THE FILMS WAS 900-1200 AA. THE RESULTS OF THE AUGER AND ESCA DEPTH PROFILING OF THE OXIDIZED SILICON NITRIDE ARE SHOWN. FOR THE OXIDIZED STRUCTURES A STEADY (PRACTICALLY EXPONENTIAL) FALL-OFF OF OXYGEN CONCENTRATION WITH DEPTH INTO THE SILICON NITRIDE IS CHARACTERISTIC.
Desc.: OXIDATION; DIFFUSION IN SOLIDS; SILICON COMPOUNDS; AUGER EFFECT; DIELECTRIC THIN FILMS; SPECTROCHEMICAL ANALYSIS; ULTRAVIOLET PHOTOELECTRON SPECTRA
Ident.: SI/SUB 3/N/SUB 4/ FILMS; DIELECTRIC THIN FILMS; AUGER DEPTH PROFILING; MASKING FILMS; SIO/SUB X/N/SUB Y/; O PENETRATION; ESCA DEPTH PROFILING; OXIDATION; SILICON OXYNITRIDES; DIFFUSION KINETICS; LAYER-BY-LAYER SPECTROSCOPIC ANALYSIS; OXIDIZED STRUCTURES
Class Codes: A8160; B2550E

Y012013 30
1392878 A85022695
SURFACE OF POWDERS OF SILICON NITRIDE PRODUCED BY SELF-PROPAGATING HIGH-TEMPERATURE SYNTHESIS
SHUL'GA, YU.M.; MARTYNENKO, V.M.; MORAVSKAYA, T.M.; BOROVINSKAYA, I.P.; MERZHANOV, A.G.; BOROD'KO, YU.G.
INST. OF CHEM. PHYS., CHERNOGOLOVKA, USSR
POROSHK. METALL. (USSR) VOL.23, NO.1 48-54 JAN. 1984 CODEN: PMANAI
ISSN: 0032-4795
Trans in: SOV. POWDER METALL. AND MET. CERAM. (USA) VOL.23, NO.1 46-51 JAN. 1984 CODEN: SPMCAV
ISSN: 0038-5735
USCCC Code: 0038-5735/84/2301-0046$08.50
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (17 Refs)
AN IMPORTANT FACTOR DETERMINING MANY PROPERTIES OF REFRACTORY INORGANIC COMPOUND POWDERS IS THEIR SURFACE CONDITION, WHICH OFTEN DEPENDS ON THE METHOD OF PREPARATION OF THE POWDERS. IN THIS CONNECTION, THE WORK WAS UNDERTAKEN WITH THE AIM OF STUDYING THE SURFACE COMPOSITION OF POWDERS OF SILICON NITRIDE PRODUCED BY SELF-PROPAGATING HIGH-TEMPERATURE SYNTHESIS (SHS) AND OF STARTING METALLIC SILICON POWDERS. THE TWO METHODS OF INVESTIGATION EMPLOYED-X-RAY PHOTOELECTRON SPECTROSCOPY (XPS) AND AUGER ELECTRON SPECTROSCOPY (AES)-ENABLE INFORMATION TO BE OBTAINED ON THE STATE AND RELATIVE AMOUNTS OF ELEMENTS IN SURFACE LAYERS (0.5-4 NM) OF SOLIDS.
Desc.: SILICON COMPOUNDS; SURFACE STRUCTURE; POWDER TECHNOLOGY; MATERIALS PREPARATION; X-RAY PHOTOELECTRON SPECTRA; AUGER EFFECT
Ident.: SI/SUB 3/N/SUB 4/; REFRACTORY INORGANIC COMPOUND POWDERS; SURFACE COMPOSITION; POWDERS; SELF-PROPAGATING HIGH-TEMPERATURE SYNTHESIS; X-RAY PHOTOELECTRON SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; SURFACE LAYERS
Class Codes: A8120L; A8120E; A6820; A7960E; A7920F

Y012013 31
1392875 A85022692
DEMONSTRATION OF A SILICON NITRIDE ATTRITION MILL FOR PRODUCTION OF FINE PURE SI AND SI/SUB 3/N/SUB 4/ POWDERS
HERBELL, T.P.; GLASGOW, T.K.; ORTH, K.W.
NASA-LEWIS RES. CENTER, CLEVELAND, OH, USA
AM. CERAM. SOC. BULL. (USA) VOL.63, NO.9 1176-8 SEPT. 1984 CODEN: ACSBA7
ISSN: 0002-7812
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (7 Refs)
TO AVOID METALLIC IMPURITIES NORMALLY INTRODUCED BY MILLING CERAMIC POWDERS IN CONVENTIONAL STEEL HARDWARE, AN ATTRITION MILL (HIGH-ENERGY STIRRED BALL MILL) WAS CONSTRUCTED WITH THE WEARING PARTS (MILL BODY, STIRRING ARMS, AND MEDIA) MADE FROM SILICON NITRIDE. COMMERCIAL SILICON AND SI/SUB 3/N/SUB 4/ POWDERS WERE MILLED TO FINE UNIFORM PARTICLES WITH ONLY MINIMAL CONTAMINATION-PRIMARILY FROM WEAR OF THE SINTERED SI/SUB 3/N/SUB 4/ MEDIA.
Desc.: SILICON; SILICON COMPOUNDS; CERAMICS; POWDER TECHNOLOGY; MATERIALS PREPARATION; MATERIALS PREPARATION; CERAMICS; POWDER TECHNOLOGY
Ident.: FINE PURE SI POWDERS; MILLING CERAMIC POWDERS; ATTRITION MILL; HIGH-ENERGY STIRRED BALL MILL; WEARING PARTS; MILL BODY; STIRRING ARMS; SI/SUB 3/N/SUB 4/ POWDERS; FINE UNIFORM PARTICLES; MINIMAL CONTAMINATION; SINTERED SI/SUB 3/N/SUB 4/ MEDIA
Class Codes: A8120L; A8120E

Y012013 32
1392798 A85022551
ELECTRON SPECTROSCOPY STUDY OF SIC
BOZLO, F.; MUEHLHOFF, L.; TRENARY, M.; CHOYKE, W.J.; YATES, J.T., JR.
SURFACE SCI. CENTER, PITTSBURGH UNIV., PA, USA
J. VAC. SCI. AND TECHNOL. A (USA) VOL.2, NO.3 1271-4 JULY-SEPT. 1984 CODEN: JVTAD6
ISSN: 0734-2101
USCCC Code: 0734-2101/84/031271-04$01.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
A SILICON CARBIDE SINGLE CRYSTAL HAS BEEN STUDIED USING X-RAY PHOTOELECTRON SPECTROSCOPY AND X-RAY AND ELECTRON EXCITED AUGER SPECTROSCOPY. A PROCEDURE FOR PRODUCING AN ATOMICALLY CLEAN SIC CRYSTAL SURFACE HAS BEEN PERFECTED. THE SIC EXHIBITS PROMINENT BULK PLASMON LOSS FEATURES ASSOCIATED WITH SI AND C PHOTOELECTRONS. THIS LOSS, AT 22.5 EV, AGREES WELL WITH OPTICAL DATA ESTABLISHING THE BULK PLASMON ENERGY.
Desc.: SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT; PLASMONS; X-RAY PHOTOELECTRON SPECTRA; AUGER EFFECT
Ident.: CLEAN SURFACE PREPARATION; X-RAY EXCITED AES; SEMICONDUCTOR SIC; X-RAY PHOTOELECTRON SPECTROSCOPY; AUGER SPECTROSCOPY; BULK PLASMON LOSS
Class Codes: A7960E; A7920F; A8160C; A71?5G

Y012013 33
1382704 A85013408, B85006850
PLASMA ETCHING OF SILICON NITRIDE: AN INVESTIGATION BY MASS SPECTROMOTRY, OPTICAL SPECTROSCOPY, AND X-RAY PHOTOELECTRON SPECTROSCOPY
CLARKE, P.E.; FIELD, D.; HUMPHRIES, G.C.; HYDE, A.J; KLEMPERER, D.F.; SEAKINS, M.
SCH. OF CHEM., BRISTOL UNIV., ENGLAND
Sponsor: IEE
IEE COLLOQUIUM ON PLASMA PROCESSING FOR SEMICONDUCTORS, GAS DISCHARGE AND SURFACE ASPECTS (DIGEST NO. 79) 3/1-4 1984
11 OCT. 1984 LONDON, ENGLAND
Publ: IEE, LONDON, ENGLAND 28 pp.
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (1 Refs)
SILICON NITRIDE LAYERS ARE USED FOR VARIOUS PURPOSES IN MICROCIRCUIT FABRICATION. THE AUTHORS HAVE INVESTIGATED ASPECTS OF THE CHEMISTRY OF ETCHING SILICON NITRIDE IN A CF/SUB 4//8PERCENT O/SUB 2/ PLASMA USING A SINGLE-SLICE PARALLEL-PLATE PLASMA ETCHER. STANDARD ETCHING CONDITIONS WERE ADOPTED. THE CHAMBER PRESSURE WAS 180 M TORR, THE GAS FLOW RATE WAS 1.7 CM/SUP 3/ MIN/SUP -1/ NITROGEN EQUIVALENT, THE RF FREQUENCY WAS 62.5 KHZ, AND THE RF POWER WAS 0.37 W CM/SUP -2/ OF LOWER ELECTRODE SURFACE.
Desc.: SILICON COMPOUNDS; SEMICONDUCTOR TECHNOLOGY; SPUTTER ETCHING ; MASS SPECTROSCOPIC CHEMICAL ANALYSIS; SPECTROCHEMICAL ANALYSIS; X-RAY PHOTOELECTRON SPECTRA; SURFACE CHEMISTRY
Ident.: SI/SUB 3/N/SUB 4/; PLASMA ETCHING; SEMICONDUCTOR TECHNOLOGY TETRAFLUOROMETHANE-O/SUB 2/ PLASMA; MASS SPECTROMETRY; OPTICAL SPECTROSCOPY ; X-RAY PHOTOELECTRON SPECTROSCOPY; MICROCIRCUIT FABRICATION; CHEMISTRY; SINGLE-SLICE PARALLEL-PLATE PLASMA ETCHER; RF FREQUENCY; RF POWER
Class Codes: A8160; A8280D; A8280M; A8280P; A8265; B2550E

Y012013 34
1382678 A85008677, B85006822
THERMAL OXIDATION OF 3C SILICON CARBIDE SINGLE-CRYSTAL LAYERS ON SILICON
FUNG, C.D.; KOPANSKI, J.J.
DEPT. OF ELECTR. ENG. AND APPL. PHYS., CASE WESTERN RESERVE UNIV., CLEVELAND, OH, USA
APPL. PHYS. LETT. (USA) VOL.45, NO.7 757-9 1 OCT. 1984 CODEN: APPLAB
ISSN: 0003-6951
USCCC Code: 0003-6951/84/190757-03$01.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (13 Refs)
THERMAL OXIDATION OF THICK SINGLE-CRYSTAL 3C SIC LAYERS ON SILICON SUBSTRATES WAS STUDIED. THE OXIDATIONS WERE CONDUCTED IN A WET O/SUB 2/ ATMOSPHERE AT TEMPERATURE FROM 1000 TO 1250 DEGREESC FOR TIMES FROM 0.1 TO 50 H. ELLIPSOMETRY WAS USED TO DETERMINE THE THICKNESS AND INDEX OF REFRACTION OF THE OXIDE FILMS. AUGER ANALYSIS SHOWED THEM TO BE HOMOGENEOUS WITH NEAR STOICHIOMETRIC COMPOSITION. THE OXIDE GROWTH FOLLOWED A LINEAR PARABOLIC RELATIONSHIP WITH TIME. ACTIVATION ENERGY OF THE PARABOLIC RATE CONSTANT WAS FOUND TO BE 50 KCAL/MOLE, WHILE THE LINEAR RATE CONSTANT WAS 74 KCAL/MOLE. THE LATTER VALUE CORRESPONDS APPROXIMATELY TO THE ENERGY REQUIRED TO BREAK A SI-C BOND. ELECTRICAL MEASUREMENTS SHOW AN EFFECTIVE DENSITY OF 4-6*10/SUP 11/ CM/SUP -2/ FOR FIXED OXIDE CHARGES AT THE OXIDE-CARBIDE INTERFACE, AND THE DIELECTRIC STRENGTH OF THE OXIDE FILM IS APPROXIMATELY 6*10/SUP 6/ V/CM.
Desc.: SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; OXIDATION; REFRACTIVE INDEX; ELLIPSOMETRY; AUGER EFFECT
Ident.: SIC-SI; THERMAL OXIDATION; SEMICONDUCTOR; ELLIPSOMETRY; SINGLE-CRYSTAL 3C SIC LAYERS; WET O/SUB 2/ ATMOSPHERE; THICKNESS INDEX OF REFRACTION; AUGER ANALYSIS; HOMOGENEOUS; STOICHIOMETRIC COMPOSITION; PARABOLIC RATE CONSTANT; LINEAR RATE CONSTANT; FIXED OXIDE CHARGES; DIELECTRIC STRENGTH
Class Codes: A8160; A7865J; A7820D; B2550E; B2520M

Y012013 35
1381945 A85013403, B85006019
USE OF CERAMICS TO CONTROL THE PHYSICAL AND CHEMICAL PROPERTIES OF SURFACES
CAIRNS, J.A.; WOODHEAD, J.L.; SEGAL, D.L.
Sponsor: BRITISH CERAMIC SOC
PROC. BR. CERAM. SOC. (GB) NO.34 173 AUG. 1984 CODEN: PBRCAR
ISSN: 0524-5141
PROCEEDINGS OF THE MEETING ON CERAMIC SURFACES AND SURFACE TREATMENTS 10-21 DEC. 1983 LONDON, ENGLAND
Treatment: GENERAL, REVIEW
Doc. Type: CONF. PAP.
Lang.: Eng. (3 Refs)
SUMMARY FORM ONLY GIVEN AS FOLLOWS. IN RECENT YEARS THERE HAS BEEN AN INCREASING MOTIVATION TO EXTEND THE RANGE OF AVAILABLE CERAMICS FOR A NUMBER OF DIVERSE APPLICATIONS. THESE INCLUDE PROTECTIVE COATINGS (E.G. TO CONTROL UNDESIRABLE EFFECTS SUCH A CARBON DEPOSITION); CATALYST SUPPORTS TO MEET A GROWING INTEREST IN MATERIALS SUCH AS TIO/SUB 2/ TO REPLACE TRADITIONAL AL/SUB 2/O/SUB 3/ AND SIO/SUB 2/, AND IN THE ELECTRONICS INDUSTRY WHERE THE NEED TO PRODUCE VERY PURE CERAMICS IS BECOMING APPARENT WITH THE EMERGENCE OF NEW, ADVANCED MEMORY CIRCUITS. EXAMPLES FROM ALL THESE FIELDS ARE DESCRIBED, TOGETHER WITH THE USE OF SOL-GEL TECHNOLOGY FOR CERAMIC PRODUCTION.
Desc.: SURFACE PHENOMENA; PROTECTIVE COATINGS; MATERIALS PREPARATION; CERAMICS
Ident.: MATERIALS PREPARATION; CERAMICS; PROTECTIVE COATINGS; TIO/SUB 2/; ELECTRONICS INDUSTRY; SOL-GEL TECHNOLOGY
Class Codes: A8160D; A8120L; B0540

Y012013 36
1381942 A85013175, B85006015
PLASMA ENHANCED CVD OF SILICON NITRIDE: FILM PROPERTIES AS A FUNCTION OF PLASMA CHARACTERISTICS
KEMBER, P.N.; LIDDELL, S.C.; BLACKBORROW, P.
CENTRAL RES. LABS., THORN EMI, HAYES, ENGLAND
Sponsor: IEE
IEE COLLOQUIUM ON PLASMA PROCESSING FOR SEMICONDUCTORS, GAS DISCHARGE AND SURFACE ASPECTS (DIGEST NO. 79) 8/1-3 1984
11 OCT. 1984 LONDON, ENGLAND
Publ: IEE, LONDON, ENGLAND
28 pp.
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng.
A STUDY HAS BEEN MADE OF THE IMPORTANT PROPERTIES OF A RANGE OF SILICON NITRIDE FILMS FORMED USING PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD). THE MAJOR ADVANTAGE OF PECVD TECHNIQUES FOR SEMICONDUCTOR WORK IS THE LOW TEMPERATURE PROCESSING INVOLVED, USUALLY 200-400 DEGREESC, WHICH FOR EXAMPLE ALLOWS USE ON METALLISED WAFERS WITHOUT ADVERSE EFFECTS. THE FILMS WERE DEPOSITED ONTO BOTH SILICON AND QUARTZ SUBSTRATES. THE GASES USED WERE SILANE (100PERCENT ) AND AMMONIA. THE PROPERTIES OF THE FILMS WERE EVALUATED AS A FUNCTION OF TOTAL PRESSURE, SUBSTRATE TEMPERATURE, R? FREQUENCY AND POWER, ABSOLUTE SILANE FLOW RATE AND THE SILANE TO AMMONIA RATIO.
Desc.: SILICON COMPOUNDS; SEMICONDUCTOR TECHNOLOGY; CHEMICAL VAPOUR DEPOSITION; PLASMA DEPOSITION; REFRACTIVE INDEX; VISIBLE AND ULTRAVIOLET SPECTRA OF INORGANIC SOLIDS; INFRARED SPECTRA OF INORGANIC SOLIDS; PERMITTIVITY; DIELECTRIC THIN FILMS
Ident.: SI/SUB 3/N/SUB 4/; SEMICONDUCTOR TECHNOLOGY; RF POWER; SI SUBSTRATE; SIH/SUB 4/; NH/SUB 3/; DIELECTRIC CONSTANT; REFRACTIVE INDEX; IR ABSORPTION SPECTRA; UV ABSORPTION EDGE; FILM PROPERTIES; PLASMA CHARACTERISTICS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; LOW TEMPERATURE PROCESSING; METALLISED WAFERS; QUARTZ SUBSTRATES; SUBSTRATE TEMPERATURE; RF FREQUENCY
Class Codes: A8115H; A6855; A7865J; A7755; B0520F; B2550

Y012013 37
1377712 A85013395
FRICTION AT BROAD AND NARROW CONTACTS BETWEEN SILICON NITRIDE AND HARDENED STEEL
FESILER, H.; FRICKER, D.C.
Sponsor: BRITISH CERAMIC SOC
PROC. BR. CERAM. SOC. (GB) NO.34 129-43 AUG. 1984 CODEN: PBRCAR
ISSN: 0524-5141
PROCEEDINGS OF THE MEETING ON CERAMIC SURFACES AND SURFACE TREATMENTS 10-21 DEC. 1983 LONDON, ENGLAND
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (13 Refs)
EXPERIMENTS HAVE BEEN PERFORMED TO MEASURE THE ROOM-TEMPERATURE COEFFICIENT OF FRICTION MU BETWEEN SILICON NITRIDE AND HARDENED STEEL UNDER LOW PRESSURE CONDITIONS, MODELLING CERAMIC BLADE-DISC CONTACTS IN BLADE SPINNING TESTS, AND UNDER HIGH PRESSURE CONDITIONS, MODELLING FIXED 'LINE' CONTACTS IN SPECIMEN STRENGTH TESTS. DIFFERENT SURFACE ROUGHNESS OF BOTH HOT-PRESSED SILICON NITRIDE (HPSN) AND REACTION-BONDED SILICON NITRIDE (RBSN WERE STUDIED; DIFFERENT SOLID LUBRICANTS AS WELL AS NO LUBRICANT WERE USED.
Desc.: SILICON COMPOUNDS; FRICTION; SURFACE TOPOGRAPHY; CERAMICS; HOT PRESSING
Ident.: HOT PRESSED SI/SUB 3/N/SUB 4/; BROAD CONTACTS; REACTION BONDED SI/SUB 3/N/SUB 4/; NARROW CONTACTS; HARDENED STEEL; ROOM-TEMPERATURE COEFFICIENT OF FRICTION; LOW PRESSURE CONDITIONS; MODELLING CERAMIC BLADE-DISC CONTACTS; BLADE SPINNING TESTS; HIGH PRESSURE CONDITIONS; SURFACE ROUGHNESS; SOLID LUBRICANTS
Class Codes: A8140P; A6220P; A6820

Y012013 38
1376908 A85012501
SPECTROSCOPIC INVESTIGATIONS OF METAL-CERAMIC ENAMEL INTERFACE
STOCH, A.; STOCH, J.; PALUSZKIEWICZ, C.
Sponsor: BRITISH CERAMIC SOC
PROC. BR. CERAM. SOC. (GB) NO.34 45-52 AUG. 1984 CODEN: PBRCAR
ISSN: 0524-5141
PROCEEDINGS OF THE MEETING ON CERAMIC SURFACES AND SURFACE TREATMENTS 10-21 DEC. 1983 LONDON, ENGLAND
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (8 Refs)
THE AIM OF THE STUDY WAS TO VERIFY THE USE OF DIFFERENT SPECTROSCOPIC METHODS IN INVESTIGATIONS OF METAL-ENAMEL INTERFACES AND TO OBTAIN PRELIMINARY INFORMATION OF A CHEMICAL NATURE FROM THE BULK OF ENAMEL AND FROM THE METAL-ENAMEL INTERMEDIATE REGION. THE METHODS USED WERE: FOURIER TRANSFORM INFRARED SPECTROSCOPY, RAMAN SPECTROSCOPY AND X-RAY PHOTOELECTRON SPECTROSCOPY.
Desc.: INTERFACE STRUCTURE; RAMAN SPECTRA OF INORGANIC SOLIDS; INFRARED SPECTRA OF INORGANIC SOLIDS; METALS; CERAMICS; X-RAY PHOTOELECTRON SPECTRA; FOURIER TRANSFORM SPECTROSCOPY
Ident.: METAL-CERAMIC ENAMEL INTERFACE
Class Codes: A6848; A8160B; A7830; A7960E

Y012013 39
1376671 A85012255
EROSION BEHAVIOUR OF PHYSICALLY VAPOUR-DEPOSITED AND CHEMICALLY VAPOUR-DEPOSITED SIC FILMS COATED ON MOLYBDENUM DURING OXYGENATED ARGON BEAM THINNING
SHIKAMA, T.; KITAJIMA, M.; FUKUTOMI, M.; OKADA, M.
TSUKUBA LABS., NAT. RES. INST. FOR METALS, IBARAKIKEN, JAPAN 
THIN SOLID FILMS (SWITZERLAND) VOL.117, NO.3 191-9 20 JULY 1984 CODEN: THSFAP
ISSN: 0040-6090
USCCC Code: 0040-6090/84/$3.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (17 Refs)
THE EROSION BEHAVIOUR DURING BOMBARDMENT WITH A 5 KEV ARGON BEAM AT ROOM TEMPERATURE AS STUDIED FOR SILICON CARBIDE (SIC) FILMS OF THICKNESS OF ABOUT 10 MUM COATED ON MOLYBDENUM BY PHYSICAL VAPOUR DEPOSITION (PVD) AND CHEMICAL VAPOUR DEPOSITION (CVD). THE PVD SIC (PLASMA-ASSISTED ION PLATING) EXHIBITED A GREATER THINNING RATE THAN THE CVD SIC FILM. ELECTRON PROBE X-RAY MICROANALYSIS REVEALED THAT THE CHEMICAL COMPOSITION OF PVD SIC WAS CHANGED TO A COMPOSITION ENRICHED IN SILICON BY THE BOMBARDMENT, AND THERE WAS A NOTABLE CHANGE IN ITS SURFACE MORPHOLOGY. THE CVD SIC RETAINED ITS INITIAL CHEMICAL COMPOSITION WITH ONLY A SMALL CHANGE IN ITS SURFACE MORPHOLOGY. AUGER ELECTRON SPECTROSCOPY INDICATED THAT SILICON OXIDE WAS FORMED ON THE SURFACE OF PVD SIC BY THE BOMBARDMENT. THE GREATER THINNING RATE AND EASIER CHANGE IN CHEMICAL COMPOSITION IN PVD SIC COULD BE ATTRIBUTED TO ITS READIER CHEMICAL REACTION WITH OXYGEN DUE TO ITS MORE NONUNIFORM STRUCTURE AND WEAKER CHEMICAL BONDING. OXYGEN WAS PRESENT AS ONE OF THE IMPURITIES IN THE ARGON BEAM.
Desc.: SILICON COMPOUNDS; CVD COATINGS; ION PLATING; ION BEAM EFFECTS; WEAR; AUGER EFFECT; ELECTRON PROBE ANALYSIS
Ident.: OXYGENATED AR/SUP +/ IO BEAM THINNING; MO; ELECTRON PROBE X-RAY MICROANALYSIS; PHYSICALLY VAPOUR-DEPOSITED; CHEMICALLY VAPOUR-DEPOSITED; SIC FILMS; EROSION; PLASMA-ASSISTED ION PLATING; THINNING RATE; COMPOSITION; SURFACE MORPHOLOGY; AUGER ELECTRON SPECTROSCOPY
Class Codes: A6180J; A6855

Y012013 40
1370467 A85005541
EXPERIENCE WITH THE AMMONIUM URANY PLUTONYL CARBONATE COCONVERSION PROCESS FOR MIXED-OXIDE FUEL FABRICATION
ROEPENACK, H.; SCHNEIDER, V.W.; DRUCENBRODT, W.-G.
ALKEM GMBH, HANAU, GERMANY
AM. CERAM. SOC. BULL. (USA) VOL.63, NO.8 1051-3, 1061 AUG. 1984 CODEN: ACSBA7
ISSN: 0002-7812
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (7 Refs)
NEW REPROCESSING REQUIREMENTS ASKING FOR A SOLUBILITY OF MIXED OXIDE FUEL IN NITRIC ACID EQUAL TO THAT OF URANIUM FUEL LED TO THE DEVELOPMENT OF A NEW FABRICATION PROCESS. BY COCONVERTING A MIXED NITRATE SOLUTION OF PLUTONIUM AND URANIUM TO A MIXED OXIDE POWDER VIA AN AMMONIUM-URANYL-PLUTONYL-CARBONATE  PRECIPITATION THIS SOLUBILITY IS OBTAINED ALREADY IN THE FIRST PROCESS STEP. THE NEW PROCESS MINIMIZES DUST PRODUCTION DURING POWDER HANDLING AND RADIATION EXPOSURE OF THE PLANT PERSONNEL. IT RESULTS IN SUBSTANTIAL IMPROVEMENTS IN REGARD TO FUEL QUALITY AND PRODUCTION COSTS. PROCESS CHARACTERISTICS ARE DESCRIBED AND THE FAVORABLE PROPERTIES OF THE RESULTING U, PUO/SUB 2/-POWDER ARE GIVEN.
Desc.: FISSION REACTOR FUEL PREPARATION AND REPROCESSING; URANIUM COMPOUNDS; PLUTONIUM COMPOUNDS; POWDER TECHNOLOGY; PRECIPITATION (PHYSICAL CHEMISTRY); CERAMICS
Ident.: HNO/SUB 3/; (U, PU)O/SUB 2/ POWDER; AMMONIUM URANYL PLUTONYL CARBONATE COCONVERSION PROCESS; MIXED-OXIDE FUEL FABRICATION; REPROCESSING REQUIREMENTS; SOLUBILITY; FABRICATION PROCESS; MIXED OXIDE POWDER; AMMONIUM URANYL-PLUTONYL-CARBONATE PRECIPITATION; DUST PRODUCTION; POWDER HANDLING; RADIATION EXPOSURE; PLANT PERSONNEL; FUEL QUALITY; PRODUCTION COSTS
Class Codes: A2842H; A8120L; A2842D; A8120E

Y012013 41
1369333 B85005051
SUPPRESSION OF LOCAL HEATING ON A SILICON CARBIDE LAYER BY MEANS OF DIVIDED POTENTIALS
KIMURA, K.; TSUKIJI, M.; TANI, T.; HIRABAYASHI, S.
MITSUBISHI ELECTR. CORP., AMAGASAKI, JAPAN
IEEE TRANS. ELECTR. INSUL. (USA) VOL.EI-19, NO.4 294-302 AUG. 1984 CODEN: IETIAX
ISSN: 0018-9367
USCCC Code: 0018-9367/84/0800-0294$01.00
Treatment: APPLIC; NEW DEVELOPMENTS; THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (5 Refs)
A NEW METHOD WAS INVESTIGATED FOR SUPPRESSION OF LOCAL HEATING OF A SILICON CARBIDE LAYER USED FOR FIELD GRADING ON STATOR COIL ENDS IN HV ROTATING MACHINES. BY MEANS OF SYNCHRONOUS DIVIDED POTENTIALS AT PROPER POSITIONS ON A SIC LAYER, SURFACE CURRENT ON THE SIC LAYER IS CAUSED TO BYPASS THROUGH THE ELECTRODES OF THE DIVIDED POTENTIALS; THIS PREVENTS THERMAL RUNAWAY OF THE SIC LAYER DURING AC DIELECTRIC STRENGTH TESTS OF COIL INSULATION. SINCE SIC SHOWS HIGHLY NONLINEAR RESISTIVITY, APPROXIMATE FORMULAS OF HEAT DISTRIBUTIONS ARE DISCUSSED ON THE ASSUMPTION OF IDEAL NONLINEAR RESISTIVITY.
Desc.: SILICON COMPOUNDS; SURFACE POTENTIAL; TEMPERATURE DISTRIBUTION; PROTECTIVE COATINGS; STATORS; COILS; MACHINE PROTECTION; ELECTRIC MACHINES
Ident.: LOCAL HEATING; FIELD GRADING; STATOR COIL ENDS; HV ROTATING MACHINES; SYNCHRONOUS DIVIDED POTENTIALS; SIC LAYER; SURFACE CURRENT; AC DIELECTRIC STRENGTH TESTS; COIL INSULATION; NONLINEAR RESISTIVITY; HEAT DISTRIBUTIONS
Class Codes: B8310; B8320

Y012013 42
1365346 A84114423, B85000443
PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON AND SILICON-CONTAINING FILMS
HESS, D.W.
DEPT. OF CHEM. ENGNG., UNIV. OF CALIFORNIA, BERKELEY, CA, USA
GUPTA, D.C. (Editors)
Sponsor: ASTM
SILICON PROCESSING 218-25 1983
19-22 JAN. 1982 SAN JOSE, CA, USA
Publ: ASTM, PHILADELPHIA, PA, USA 559 pp.
Treatment: GENERAL, REVIEW; THEORETICAL; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (25 Refs)
THE USE OF A RADIOFREQUENCY (RF) GLOW DISCHARGE OR PLASMA HAS RECENTLY COME INTO FAVOR FOR THE DEPOSITION OF THIN FILMS IN PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD), CHEMICAL REACTIONS CAN BE CARRIED OUT AT LOW (<300 DEGREESC) TEMPERATURES, SINCE THE ENERGY NEEDED TO BREAK CHEMICAL BONDS IS SUPPLIED BY THE HIGH-ENERGY ELECTRONS GENERATED BY THE APPLIED RF FIELD. FURTHER, DUE TO THE COMPLEX CHEMISTRY OCCURRING WITHIN THE GLOW DISCHARGE, MATERIALS WITH UNIQUE PROPERTIES CAN BE FABRICATED. THIS PAP. REVIEWS THE CHARACTERISTICS OF NONEQUILIBRIUM GLOW DISCHARGES AS USED FOR PECVD OF SILICON AND SILICON-CONTAINING FILMS. THE GLOW-DISCHARGE-MODIFIED CHEMISTRY OF FILM DEPOSITION IS DISCUSSED AS IT RELATES TO THE PHYSICAL AND CHEMICAL PROPERTIES OF THE RESULTING FILMS. EXAMPLES INCLUDE AMORPHOUS AND SINGLE-CRYSTAL SILICON FILMS, IS WELL AS SILICON DIOXIDE AND SILICON NITRIDE FILMS, WHICH ARE WIDELY USED AS INTERMETALLIC AND PASSIVATION LAYERS IN INTEGRATED CIRCUIT MANUFACTURE.
Desc.: SILICON; ELEMENTAL SEMICONDUCTORS; CVD COATINGS; SEMICONDUCTOR THIN FILMS; PLASMA DEPOSITED COATINGS; PLASMA DEPOSITION; SILICON COMPOUNDS; SILICON COMPOUNDS
Ident.: SI; SEMICONDUCTORS; SIO/SUB 2/; SINX; CHEMICAL VAPOR DEPOSITION; GLOW DISCHARGE; THIN FILMS; CHEMICAL REACTIONS; CHEMICAL BONDS HIGH-ENERGY ELECTRONS; APPLIED RF FIELD; AMORPHOUS; SINGLE-CRYSTAL; PASSIVATION LAYERS; INTEGRATED CIRCUIT MANUFACTURE
Class Codes: A8115H; B0520F; B2550

Y012013 43
1365327 A85003387, B85000413
THIN FILM DEPOSITION BY UV LASER PHOTOLYSIS
EMERY, K.; BOYER, P.K.; THOMPSON, L.R.; SOLANKI, R.; ZARNANI, H.; COLLINS, G.J.
DEPT. OF ELECTRICAL ENGNG., COLORADO STATE UNIV., FORT COLLINS, CO, USA
Sponsor: SPIE
PROC. SPIE INT. SOC. OPT. ENG. (USA) VOL.459 9-17 1984 CODEN: PSISDG
ISSN: 0277-786X
LASER ASSISTED DIPOSITION, ETCHING AND DOPING 26-27 JAN. 1984 LOS ANGELES, CA, USA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (15 Refs)
AN ARF EXCIMER LASER WAS USED TO PHOTOCHEMICALLY DEPOSIT THIN FILMS OF SILICON DIOXIDE, SILICON NITRIDE, ALUMINUM OXIDE AND ZINC OXIDE AT LOW TEMPERATURES (100-500 DEGREESC) FOR MICROELECTRONIC APPLICATIONS. HIGH DEPOSITION (>1000 AA/MIN) RATES AND CONFORMAL STEP COVERAGE WERE OBTAINED. THE HYDROGEN BONDING, ?INHOLE DENSITY, INDEX OF REFRACTION, ETCH RATE, AND BREAKDOWN VOLTAGE HAVE BEEN MEASURED FOR THE SIO/SUB 2/ AND SILICON NITRIDE FILMS. THE EFFECT OF SUBSTRATE TEMPERATURE AND ARF (193 NM) SURFACE PHOTONS ON THE PHYSICAL, CHEMICAL AND ELECTRICAL PROPERTIES OF SIO/SUB 2/ FILMS HAVE BEEN INVESTIGATED.
Desc.: CHEMICAL VAPOUR DEPOSITION; PHOTOLYSIS; LASER BEAM EFFECTS; SILICON COMPOUNDS; HYDROGEN BONDS; REFRACTIVE INDEX; CVD COATINGS; CVD COATINGS; CHEMICAL VAPOUR DEPOSITION; PHOTOLYSIS; LASER BEAM EFFECTS; SILICON COMPOUNDS; HYDROGEN BONDS; REFRACTIVE INDEX; CHEMICAL VAPOUR DEPOSITION; PHOTOLYSIS; LASER BEAM EFFECTS; ALUMINA; CHEMICAL VAPOUR DEPOSITION; PHOTOLYSIS; LASER BEAM EFFECTS; ZINC COMPOUNDS
Ident.: PHOTOCHEMICAL DEPOSITION; SIO/SUB 2/; SI/SUB 3/N/SUB 4/; AL/SUB 2/O/SUB 3/; ZNO; HIGH DEPOSITION RATES; H BONDING; CHEMICAL PROPERTIES; PHYSICAL PROPERTIES; UV LASER PHOTOLYSIS; ARF EXCIMER LASER; THIN FILMS; LOW TEMPERATURES; MICROELECTRONIC APPLICATIONS; CONFORMAL STEP COVERAGE; HYDROGEN BONDING; PINHOLE DENSITY; INDEX OF REFRACTION; ETCH RATE ; BREAKDOWN VOLTAGE; SUBSTRATE TEMPERATURE; SURFACE PHOTONS; ELECTRICAL PROPERTIES
Class Codes: A8115H; A8250; A6855; B0520F

Y012013 44
1358489 A85000269
AN AERODYNAMIC PARTICLE SIZE ANALYSER TESTED WITH SPHERES, COMPACT PARTICLES AND FIBRES HAVING A COMMON SETTLING RATEUNDER GRAVITY
GRIFFITHS, W.D.; PATRICK, S.; ROOD, A.P.
OCCUPATIONAL MED. AND HYGIENE LAB., LONDON, ENGLAND
J. AEROSOL SCI. (GB) VOL.15, NO.4 491-502 1984 CODEN: JALSB7
ISSN: 0021-8502
USCCC Code: 0021-8502/84$3.00+0.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
A TUMBRELL AEROSOL SPECTROMETER WAS MODIFIED TO ALLOW THE WITHDRAWAL OF PARTICLES OF KNOWN SETTLING VELOCITY WHICH WERE THEN PASSED INTO AN INERTIAL AERODYNAMIC PARTICLE SIZE ANALYSER, SO THAT THE LATTER'S READ-OUT OF AERODYNAMIC DIAMETERS COULD BE CHECKED. EXCELLENT AGREEMENT BETWEEN THE READ-OUT VALUE WITH THAT CALCULATED FROM SETTLING VELOCITY WAS FOUND FOR SPHERICAL PARTICLES OF UNIT DENSITY. SILICON CARBIDE PARTICLES OF THE SAME SETTLING VELOCITY, BUT OF A NONSPHERICAL SHAPE AND OF HIGHER DENSITY, WERE ALSO WITHDRAWN AND PASSED INTO THE AERODYNAMIC PARTICLE SIZE ANALYZER. THE DISPLAYED VALUE OF AERODYNAMIC DIAMETER WAS THE SAME AS THAT OF THE UNIT-DENSITY SPHERES OF THE SAME SETTLING VELOCITY, FOR AERODYNAMIC DIAMETERS OF LESS THAN (APPROXIMATELY) 5 MUM. ABOVE THIS SIZE THE APS APPEARED TO UNDERSIZE THE SIC PARTICLES. IN ADDITION TO THIS, GLASS FIBRES OF THE SAME SETTLING VELOCITY WERE WITHDRAWN AND PASSED INTO THE AERODYNAMIC PARTICLE SIZER. FOR FIBRES, THE DISPLAYED VALUES OF AERODYNAMIC DIAMETERS WERE LESS THAN THAT OF THE UNIT-DENSITY SPHERES OF THE SAME SETTLING VELOCITY FOR SIZES SMALLER THAN 5 MUM AND THEN INCREASED. THE VALUES OF AERODYNAMIC DIAMETER FOR THESE FIBRES, CALCULATED FROM THE SETTLING VELOCITIES WERE, HOWEVER, FOUND TO AGREE WITH THEORY. THE RANGE OF AERODYNAMIC DIAMETERS COVERED WAS 1-8 MUM.
Desc.: PARTICLE SIZE MEASUREMENT; SEDIMENTATION; AERODYNAMICS
Ident.: SIC PARTICLES; SPHERES; COMPACT PARTICLES; FIBRES; SETTLING RATE; GRAVITY; AEROSOL SPECTROMETER; SETTLING VELOCITY; INERTIAL AERODYNAMIC PARTICLE SIZE ANALYSER; AERODYNAMIC DIAMETERS; UNIT DENSITY; GLASS FIBRES
Class Codes: A0630C; A8270

Y012013 45
1349056 A84109331, B8405801
SIC HIGH-TEMPERATURE OPTOELECTRONIC DEVICES
YOSHIDA, S.; SAKUMA, E.; ENDO, K.; MISAWA, S.; MIYAZAWA, T.; GONDE, S.
ELECTROTECH. LAB., IBARAKI, JAPAN
BULL. ELECTROTECH. LAB. (JAPAN) VOL.48, NO.5-6 404-19 1984 CODEN: Desc.: 0366-9092
Treatment: BIBLIOGRAPHY; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (63 Refs)
WITH THE AIM OF REALIZING OPTOELECTRONIC DEVICES THAT WORK AT HIGH TEMPERATURES, CRYSTAL GROWTH AND MATERIALS CHARACTERIZATION OF SILICON CARBIDE HAVE BEEN INVESTIGATED. BY THE SUBLIMATION METHOD GOOD-QUALITY 6H-SIC IS OBTAINED WITH A HIGH GROWTH RATE OF SEVERAL HUNDRED MUM/H IN THE PRESENCE OF LOW-PRESSURE ARGON GAS. BY LIQUID PHASE EPITAXY (A DIP METHOD), EXCELLENT-QUALITY 6H-SIC IS OBTAINED, WHICH SHOWS STRONG BAND EDGE EMISSION AT ROOM TEMPERATURE. IN CHEMICAL VAPOR DEPOSITION, A NEW DOPING METHOD HAS BEEN DEVELOPED USING METALORGANICS SUCH AS TRIETHYLALUMINUM AS DOPING GASES, AND P-TYPE 6H-SIC IS OBTAINED WITH GOOD REPRODUCIBILITY. GOOD-QUALITY 3C-SIC IS ALSO GROWN ON SI SUBSTRATES BY CHEMICAL VAPOR DEPOSITION. NEW GROWTH METHODS USING PHYSICAL VAPOR DEPOSITION HAVE BEEN DEVELOPED. DIAMOND-LIKE CARBON THIN FILMS ARE FABRICATED AT ROOM TEMPERATURE BY USING C ION BEAMS. SINGLE CRYSTAL FILMS OF 3C-SIC ARE MADE AT TEMPERATURES AS LOW AS 800 DEGREESC USING C ION AND SI MOLECULAR BEAMS. BY REACTIVE MOLECULAR BEAM EPITAXY USING SI AND C/SUB 2/H/SUB 2/ BEAMS, 3C-SIC IS GROWN ON SAPPHIRE AND SI SUBSTRATES.
Desc.: SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR EPITAXIAL LAYERS; LIQUID PHASE EPITAXIAL GROWTH; CVD COATINGS
Ident.: SINGLE CRYSTALS; SEMICONDUCTORS; SIC HIGH-TEMPERATURE OPTOELECTRONIC DEVICES; CRYSTAL GROWTH; MATERIALS CHARACTERIZATION; SUBLIMATION METHOD; LIQUID PHASE EPITAXY; BAND EDGE EMISSION; CHEMICAL VAPOR DEPOSITION; DOPING METHOD; SI SUBSTRATES; C ION BEAMS; SAPPHIRE
Class. Codes: A8115L; A6855; A0130T; A8115H; B0510D; B0520F

Y012013 46
1335645 A84095626, B84055792
GRAIN BOUNDARY DIFFUSION OF LIQUID METAL COOLANTS IN OPTICAL MATERIALS FOR USE WITH HIGH POWER SYNCHROTRON RADIATION
HUNTER, W.W.; WILLIAMS, R.T.
NAVAL RES. LAB., WASHINGTON, DC, USA
NUCL. INSTRUM. AND METHODS PHYS. RES. SECT. A (NETHERLANDS) VOL.222, NO.1-2 359-63 15 MAY 1984 CODEN: NIMRD9
ISSN: 0167-5087
PROCEEDINGS OF THE THIRD NATIONAL CONF. ON SYNCHROTRON RADIATION INSTRUMENTATION 12-14 SEPT. 1983 UPTON, NY, USA
USCCC Code: 0167-5087/84/$03.00
Treatment: PRACTICAL
Doc. Type: CONF. PAP.
Lang.: ENG. (6 Refs)
A MAJOR CONCERN IN THE DESIGN OF HIGH-FLUX X-RAY BEAM LINES IS HEAT DISSIPATION IN THE FIRST OPTICAL ELEMENT, ESPECIALLY IF THAT ELEMENT MUST OPERATE IN ULTRAHIGH VACUUM. IN CONSIDERING METHODS OF COOLING, IT IS GENERALLY DESIRABLE TO ACHIEVE GOOD THERMAL CONSTANT OVER A LARGE AREA, WITHOUT INTRODUCING STRESS OR VIBRATION INTO THE OPTICAL ELEMENT, OR HINDERING ITS MOTION FOR OPTICAL ALIGNMENT. A METHOD WHICH HAS BEEN CONSIDERED BY SEVERAL GROUPS EMPLOYS A LOW VAPOR PRESSURE LIQUID METAL TO PROVIDE STRESS-FREE THERMAL COUPLING OF THE OPTICAL ELEMENT TO A HEAT SINK. THE EUTECTIC ALLOY OF GA-IN SEEMS ATTRACTIVE FOR THIS PURPOSE IN MANY RESPECTS. IT IS LIQUID AT ROOM TEMPERATURE, YET HAS AN EXTRAORDINARILY LOW VAPOR PRESSURE, ESSENTIALLY UNMEASURABLE AT ROOM TEMPERATURE AND LESS THAN 10/SUP -12/ TORR AT 300 DEGREESC. HOWEVER, THE LIQUID METAL REACTS QUICKLY AND DESTRUCTIVELY WITH ALUMINIUM AND ITS ALLOYS, MATERIALS EXTREMELY USEFUL IN THE MANUFACTURE OF OPTICAL ELEMENTS. THE REACTION PROPAGATES VIA GRAIN BOUNDARY DIFFUSION, AND SUBSEQUENT INTERMETALLIC REACTIONS AND EMBRITTLEMENT DESTROY THE ALUMINUM. THE GA-IN EUTECTIC REACTS TO A LESSER DEGREE WITH OTHER MATERIALS SUCH AS COPPER AND SILICON, WHILE MATERIALS SUCH AS SILICON CARBIDE, NICKEL, AND 304 STAINLESS STEEL APPEAR RELATIVELY RESISTANT TO ATTACK IN THE ABSENCE OF STRESS.
Desc.: SYNCHROTRON RADIATION; BEAM HANDLING EQUIPMENT; X-RAY APPARATUS; COOLING; DIFFUSION IN LIQUIDS
Ident.: LIQUID METAL COOLANTS; OPTICAL MATERIALS; HIGH POWER SYNCHROTRON RADIATION; HIGH-FLUX X-RAY BEAM LINES; HEAT DISSIPATION; ULTRAHIGH VACUUM; GRAIN BOUNDARY DIFFUSION; INTERMETALLIC REACTIONS; GA-IN EUTECTIC
Class Codes: A0785; A2925F; A0560; B7410B

Y012013 47
1332444 B84052354
PHOTOLITHOGRAPHY IN PRODUCTION OF 1 MHZ CRYSTALS
DOI, A.
KINSEKI LTD., TOKYO, JAPAN
JEE (JAPAN) VOL.21, NO.206 46-50 FEB. 1984 CODEN: JEENDL
ISSN: 0385-4507
Treatment: GENERAL, REVIEW; PRACTICAL
Doc. Type: JRNL PAP.
Lang.: Eng.
AS WITH OTHER ELECTRONIC COMPONENTS, TECHNOLOGICAL IMPROVEMENT HAS BEEN EXTENDED TO CRYSTALS, TOO. UNLIKE CERAMICS, CRYSTALS ARE MADE OF QUARTZ OF HIGH QUALITY AND HIGH CHEMICAL STABILITY FOR RELIABLE PERFORMANCE AND STABLE RESONANCE FREQUENCY AND SERIAL RESISTANCE OVER EXTENDED USE. THE APPLICATION OF PHOTOLITHOGRAPHY IN CRYSTAL PRODUCTION HAS BROUGHT THE SAME ADVANTAGES IN PRICE AND PERFORMANCE ATTRIBUTED TO CERAMIC PRODUCTS.
Desc.: CRYSTAL RESONATORS; QUARTZ; PHOTOLITHOGRAPHY
Ident.: 1 MHZ CRYSTAL RESONATORS; QUARTZ; CHEMICAL STABILITY; STABLE RESONANCE FREQUENCY; SERIAL RESISTANCE; PHOTOLITHOGRAPHY; CRYSTAL PRODUCTION
Class Codes: B2860

Y012013 48
1332128 A84093433, B84?52020
HEATING SILICON DIOXIDE AT 950-1050 DEGREESC IN THE PRESENCE OF AN NH/SUB 3/+CF/SUB 4/ PLASMA
MORITA, M; ISHIHARA, T.; HIROSE, M.
DEPT. OF ELECTRICAL ENGNG., HIROSHIMA UNIV., HIGASHIHIROSHIMA, JAPAN
J. APPL. PHYS. (USA) VOL.56, NO.2 342-6 15 JULY 1984 CODEN: JAPIAU
ISSN: 0021-8979
USCCC Code: 0021-8979/84/140342-05$02.40
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
VERY THIN SIO/SUB 2/ FILMS THERMALLY GROWN ON SI WERE ANNEALED AT A TEMPERATURE OF 950 OR 1050 DEGREESC IN THE GLOW DISCHARGE OF EITHER AN NH/SUB 3/ GAS CONTAINING 4PERCENT CF/SUB 4/ OR A PURE NH/SUB 3/. FROM THE CHEMICAL ANALYSIS OF ANNEALED FILMS USING AUGER ELECTRON SPECTROSCOPY AND X-RAY PHOTOELECTRON SPECTROSCOPY, IT IS FOUND THAT ANNEALING HAS RESULTED IN THE FORMATION OF SILICON NITRIDE LAYER ON THE SIO/SUB 2/ SURFACE AND IN THE INCORPORATION OF BONDED NITROGEN INTO THE SIO/SUB 2/ LAYER. IT IS ALSO DEMONSTRATED THAT THE SURFACE NITRIDE LAYER IN FORMED PRIMARILY BY THE DEPOSITION OF SILICON NITRIDE RESULTING FROM THE REACTION OF FRAGMENTS OF NH/SUB 3/ WITH THE SILICON ATOMS PRODUCED BY THE PLASMA ETCHING OF THE QUARTZ TUBE WALL BY ATOMIC HYDROGEN AND FLUORINE.
Desc.: SILICON COMPOUNDS; INSULATING THIN FILMS; ANNEALING; AUGER EFFECT; X-RAY PHOTOELECTRON SPECTRA; SURFACE TREATMENT; SPUTTER ETCHING; SURFACE CHEMISTRY
Ident.: SI/SUB 3/N/SUB 4/ LAYER; NH/SUB 3/+CF/SUB 4/ PLASMA; THIN SIO/SUB 2/ FILMS; ANNEALED; GLOW DISCHARGE; CHEMICAL ANALYSIS; AUGER ELECTRON SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; SURFACE NITRIDE LAYER; DEPOSITION; PLASMA ETCHING
Class Codes: A8160; A7920F; A8265J; A7960E; B2550E

Y012013 49
1332100 A84098609, B84051989
THE EFFECT OF VARIOUS ENCAPSULANTS ON THE ELECTRICAL PROPERTIES OF IMPLANTED LAYERS IN GAAS
RAO, V.B.; KOYAMA, R.Y.
SEMICONDUCTOR RES. DEPT., TEKTRONIX INC., BEAVERTON, OR, USA
J. ELECTROCHEM. SOC. (USA) VOL.131, NO.7 1674-8 JULY 1984 CODEN: JESOAN
ISSN: 0013-4651
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (25 Refs)
REACTIVELY SPUTTERED SILICON NITRIDE, PLASMA-ENHANCED CVD SILICON NITRIDE, AND SILOX HAVE BEEN INVESTIGATED AS DIELECTRICS FOR THE ENCAPSULATION OF GAAS FOR THE PURPOSE OF POST-IMPLANTATION ANNEAL. THE EFFECT OF SEVERAL TREATMENTS ON THE GAAS SURFACE PRIOR TO DIELECTRIC DEPOSITION WAS ANALYZED BY AUGER SPECTROSCOPY AND ELLIPSOMETRY TO CHARACTERIZE THE HIGH TEMPERATURE ANNEALABILITY OF THE ENCAPSULATED SAMPLES. AN AMMONIUM HYDROXIDE-HYDROGEN PEROXIDE ETCHANT THAT LEAVES THE SURFACE CLEAN AND DAMAGE FREE WAS FOUND TO BE THE MOST SUITABLE. AFTER SURFACE TREATMENT AND DIELECTRIC DEPOSITION, VAN DER PAUW DEVICES WERE FABRICATED AND CARRIER MOBILITIES AND SHEET CARRIER CONCENTRATIONS FOR DEVICES ANNEALED AT 800 DEGREESC WERE COMPARED. IN SPECIFIC CASES, THE ELECTRICAL CHARACTERISTICS OF DEVICES ANNEALED AT HIGHER TEMPERATURES (850 DEGREES AND 900 DEGREESC) WERE ALSO MEASURED. DIFFERENCES IN THE CARRIER MOBILITIES AND SHEET CARRIER CONCENTRATIONS OBTAINED, USING THE VARIOUS DIELECTRIC FILMS, HAVE BEEN EXPLAINED IN TERMS OF THE MOVEMENT OF A SURFACE DEPLETION LAYER EDGE CLOSER TO OR AWAY FROM THE GAAS-DIELECTRIC INTERFACE.
Desc.: GALLIUM ARSENIDE; III-V SEMICONDUCTORS; ION IMPLANTATION; ANNEALING; ENCAPSULATION; CARRIER MOBILITY; CARRIER DENSITY; ELLIPSOMETRY; AUGER EFFECT
Ident.: SEMICONDUCTOR; SI/SUB 3/N/SUB 4/; REACTIVELY SPUTTERED; GAAS ; PLASMA-ENHANCED ?CVD; SILOX; ENCAPSULATION; POST-IMPLANTATION ANNEAL; DIELECTRIC DEPOSITION; AUGER SPECTROSCOPY; ELLIPSOMETRY; HIGH TEMPERATURE ANNEALABILITY; VAN DER PAUW DEVICES; CARRIER MOBILITIES; SHEET CARRIER CONCENTRATIONS; SURFACE DEPLETION LAYER; GAAS-DIELECTRIC INTERFACE
Class Codes: A7220F; A6170T; A7280E; B2550B; B2520D

Y012013 50
1331011 A8409337, B84050826
MICROELECTRONIC THIN FILM DEPOSITION BY UV LASER PHOTOLYSIS
BOYER, P.K.; MOORE, C.A.; SOLANKI; RITCHIE, W.K.; COLLINS, G.J.
DEPT. OF ELECTRICAL ENGNG., COLORADO STATE UNIV., FORT COLLINS, CO, USA
Sponsor: JAPAN SOC. APPL. PHYS
EXTENDED ABSTRACTS OF THE 15TH CONF. ON SOLID STATE DEVICES AND MATERIALS 109-15 1983
30 AUG.-1 SEPT. 1983 TOKYO, JAPAN
Publ: JAPAN SOC. APPL. PHYS., TOKYO, JAPAN
X+381 pp. ISBN 4 930813 04 2
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (9 Refs)
AN EXCIMER LASER IS USED TO PHOTOCHEMICALLY DEPOSIT THIN FILMS OF SILICON DIOXIDE, SILICON NITRIDE, AND ALUMINUM OXIDE AT LOW TEMPERATURE (100-450 DEGREESC). HIGH DEPOSITION RATES AND CONFORMAL STEP COVERAGE WERE DEMONSTRATED. THE FILMS EXHIBIT LOW DEFECT DENSITY AND HIGH BREAKDOWN VOLTAGE AND HAVE BEEN CHARACTERIZED USING IR SPECTROPHOTOMETRY, AES, AND C-V ANALYSIS. ADDITIONALLY, THE AUTHORS HAVE DEPOSITED METALLIC FILMS OF AL, MO, W, AND CR AT ROOM TEMPERATURE OVER LARGE (>5 CM/SUP 2/) AREAS.
Desc.: SILICON COMPOUNDS; CVD COATINGS; DIELECTRIC THIN FILMS; INFRARED SPECTRA OF INORGANIC SOLIDS; AUGER EFFECT; ELECTRIC BREAKDOWN OF SOLIDS; SILICON COMPOUNDS; CVD COATINGS; DIELECTRIC THIN FILMS; INFRARED SPECTRA OF INORGANIC SOLIDS; AUGER EFFECT; ELECTRIC BREAKDOWN OF SOLIDS; ALUMINA; CVD COATINGS; DIELECTRIC THIN FILMS; INFRARED SPECTRA OF INORGANIC SOLIDS; AUGER EFFECT; ELECTRIC BREAKDOWN OF SOLIDS
Ident.: SIO/SUB 2/; SI/SUB X/NY; AL/SUB 2/O/SUB 3/; THIN FILM DEPOSITION; UV LASER PHOTOLYSIS; EXCIMER LASER; DEPOSITION RATES; CONFORMAL STEP COVERAGE; DEFECT DENSITY; BREAKDOWN VOLTAGE; IR SPECTROPHOTOMETRY; AES
C-V ANALYSIS; METALLIC FILMS; AL; MO; W; CR
Class Codes: A8115H; A6855; A7755; A7920F; A7865J; B0520F

Y012013 51
1319527 A84093575
BEAM TECHNIQUES FOR THE ANALYSIS OF POORLY CONDUCTING MATERIALS
WERNER, H.W.; WARMOLTZ, N.
PHILIPS RES. LABS., EINDHOVEN, NETHERLANDS
J. VAC. SCI. AND TECHNOL. A (USA) VOL.2, NO.2, PT.2 726-31 APRIL-JUNE 1984 CODEN: JVTAD6
ISSN: 0734-2101
PROCEEDINGS OF THE 30TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY 31 OCT.-4 NOV. 1983 BOSTON, MA, USA
USCCC Code: 0734-2101/84/020726-06$01.00
Treatment: GENERAL, REVIEW
Doc. Type: CONF. PAP.
Lang.: Eng. (37 Refs)
BEAM TECHNIQUES FOR THE SURFACE ANALYSIS OF SOLIDS (E.G. ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA), AUGER ELECTRON SPECTROSCOPY (AES), ANALYTICAL ELECTRON MICROSCOPY (AEM), LOW ENERGY ION SCATTERING (LEIS), RUTHERFORD BACKSCATTERING (RES), AND SECONDARY ION MASS SPECTROMETRY (SIMS)), ARE BASED ON THE INTERACTION OF BEAMS OF PHOTONS, ELECTRONS, OR IONS RESPECTIVELY, WITH A SOLID AND THE DETECTION OF THE RESULTING INFORMATION-CARRYING BEAMS OF PHOTONS, ELECTRONS, R IONS. WITH THESE METHODS THE CHEMICAL COMPOSITION OF THE SOLID, ACROSS THE SAMPLE SURFACE AND IN DEPTH (CONCENTRATION PROFILE) CAN BE DETERMINED. A LARGE NUMBER OF ARTIFACTS MAY BE INTRODUCED IN ANY TYPE OF SAMPLE. IN NONIDEAL SYSTEMS, SUCH AS GLASS AND CERAMIC SAMPLES, ADDITIONAL DIFFICULTIES CAN BE INTRODUCED (A) BY THE POOR ELECTRICAL CONDUCTIVITY: CHARGING OF THE SAMPLE OCCURS, LEADING TO (A) DETERIORATION AND EVEN A COMPLETE SUPPRESSION OF THE SPECTRA, (B) LOSS IN LATERAL RESOLUTION IN THE IMAGING MODE, AND (C) MIGRATION OF MOBILE IONS IN THE SAMPLE AND (B) BY THE EXTREME THIN INTERFACES IN POLYCRYSTALLINE MATERIALS WHICH REQUIRE THE USE OF TECHNIQUES WITH LATERAL RESOLUTION DOWN TO THE 5 NM RANGE. MECHANISMS WHICH LEAD TO A DETERIORATION OF THE SPECTRA AND PROCEDURES TO OVERCOME THEM WILL BE DISCUSSED, FOLLOWED BY EXAMPLES FOR THE SUCCESSFUL ANALYSIS OF GLASSES AND CERAMICS.
Desc.: SURFACE STRUCTURE; SPECTROCHEMICAL ANALYSIS; AUGER EFFECT; ELECTRON MICROSCOPY; ELECTRON PROBE ANALYSIS; PARTICLE BACKSCATTERING; ION-SURFACE IMPACT; SECONDARY ION MASS SPECTROSCOPY; GLASS; CERAMICS
Ident.: BEAM TECHNIQUES; SAMPLE PREPARATION; POORLY CONDUCTING MATERIALS; SURFACE ANALYSIS; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; AUGER ELECTRON SPECTROSCOPY; ANALYTICAL ELECTRON MICROSCOPY; LOW ENERGY ION SCATTERING; RUTHERFORD BACKSCATTERING; SECONDARY ION MASS SPECTROMETRY; CHEMICAL COMPOSITION; CONCENTRATION PROFILE; ARTIFACTS; NONIDEAL SYSTEMS; GLASSES; CERAMICS
Class Codes: A8280P; A6820; A8280M; A7920F; A7920N

Y012013 52
1319445 A84093491
MULTIAXIAL STRENGTH TESTS FOR BRITTLE MATERIALS
FESSLER, H.; FRICKER, D.C.
DEPT. OF MECH. ENGNG., UNIV. OF NOTTINGHAM, NOTINGHAM, ENGLAND
J. STRAIN ANAL. ENG. DES. (GB) VOL.19, NO.3 197-208 JULY 1984 CODEN: JSADDZ
ISSN: 0309-324
USCCC Code: 0309-3247/84/0700-0197$02.00
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
MATCHSTICK AND COIN SHAPED SPECIMENS ARE USED TO DETERMINE THE MATERIAL STRENGTH CONSISTENCY AND MEAN FRACTURE STRENGTH UNDER FIVE DIFFERENT STRESS RATIOS, USING WEIBULL STATISTICS. MANY PRACTICAL LOADING MODES OF THESE SIMPLE SHAPES ARE ASSESSED. FOR THE BEST, THE NECESSARY EXPERIMENTAL WORK AND RESULTS OF THE ANALYSES ARE PRESENTED AND ILLUSTRATED FOR AS-FIRED REACTION-BONDED SILICON NITRIDE (RBSN) TESTED AT ROOM-TEMPERATURE.
Desc.: MATERIALS TESTING; TENSILE STRENGTH; BRITTLENESS; SILICON COMPOUNDS; CERAMICS
Ident.: RBSN; REACTION BONDED SI/SUB 3/N/SUB 4/; MULTIAXIAL STRENGTH TESTS; MATCHSTICK-SHAPED SPECIMENS; BRITTLE MATERIALS; COIN SHAPED SPECIMENS; MEAN FRACTURE STRENGTH; STRESS RATIOS; WEIBULL STATSTICS
Class Codes: A8170; A4630R

Y012013 53
1313694 B84047094
A FLEXIBLE MULTILAYER RESIST SYSTEM USING LOW TEMPERATURE PLASMA-DEPOSITED SILICON NITRIDE
SOLLER, B.R.; SNIDER, C.R.; SHUMAN, R.F.
SPERRY RES. CENTER, SUDBURY, MA, USA
J. ELECTROCHEM. SOC. (USA) VOL.131, NO.4 868-72 APRIL 1984 CODEN: JESOAN
ISSN: 0013-4651
Treatment: PRACTICAL
Doc. Type: JRNL PAP.
Lang.: Eng. (13 Refs)
A THREE-LAYER RESIST SYSTEM WHICH USES POSITIVE PHOTORESISTS FOR PLANARIZING AND IMAGING AND AN INTERMEDIATE LASER OF PLASMA-DEPOSITED SILICON NITRIDE IS DESCRIBED. THE PLANARIZING LAYER IS 2 MUM-THICK SHIPLEY AZ 2430. THIS SILICON NITRIDE TRANSFER LAYER IS DEPOSITED AT LOW TEMPERATURE OVER HARD-BAKED AZ 2430. PHOTON OR ELECTRON IMAGING IS DONE IN A THIN LAYER OF RESIST SPUN ON TOP OF THE TRANSFER LAYER. THE SILICON NITRIDE DEPOSITION PROCESS IS DESCRIBED, AND THE PROPERTIES OF THE RESULTING FILM ARE DETAILED. THE PLANARIZING PHOTORESIST IS PATTERNED BY OXYGEN REACTIVE ON ETCHING. THE VERTICAL ETCH RATE AND THE DEGREE OF ISOTROPY ARE MEASURED AS A FUNCTION OF RF POWER AND OXYGEN PRESSURE. CONTROLLABLE AND REPRODUCIBLE UNDERCUT IS ACHIEVED WITH THIS MULTILAYER RESIST SYSTEM. THE RESIST PROFILE IS DEMONSTRATED TO BE SUITABLE FOR LIFT-OFF APPLICATIONS OR ANISOTROPIC ETCHING OF THE SUBSTRATE.
Desc.: SILICON COMPOUNDS; PLASMA DEPOSITED COATINGS; PHOTORESISTS; INTEGRATED CIRCUIT TECHNOLOGY; SPUTTER ETCHING
Ident.: SI/SUB 3/N/SUB 4/; INTEGRATED CIRCUITS; FLEXIBLE MULTILAYER RESIST SYSTEM; LOW TEMPERATURE; PLASMA-DEPOSITED; POSITIVE PHOTORESISTS; PLANARIZING LAYER; REACTIVE ION ETCHING; VERTICAL ETCH RATE; UNDERCUT; LIFT-OFF APPLICATIONS; ANISOTROPIC ETCHING
Class Codes: B2570; B2550

Y012013 54
1308190 A84088983
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF THIN CRYSTALLINE SEMICONDUCTOR AND CONDUCTOR FILMS
REIF, R.
DEPT. OF ELECTRICAL ENGNG. AND COMPUTER SCI., MIT, CAMBRIDGE, MA, USA
J. VAC. SCI. AND TECHNOL. A (USA) VOL.2, NO.2, PT.1 429-3 APRIL-JUNE 1984 CODEN: JVTAD6
ISSN: 0734-2101
PROCEEDINGS OF THE 30TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY
31 OCT.-4 NOV. 1983 BOSTON, MA, USA
USCCC Code: 0734-2101/84/020429-07$01.00
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (47 Refs)
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) IS A TECHNIQUE WIDELY ACCEPTED IN MICROELECTRONICS FOR THE DEPOSITION OF AMORPHOUS DIELECTRIC FILMS SUCH AS SILICON NITRIDE AND SILICON OXIDE. THE MAIN ADVANTAGE OF PECVD STEMS FROM THE INTRODUCTION OF PLASMA ENERGY TO THE CVD ENVIRONMENT WHICH MAKES IT POSSIBLE TO PROMOTE CHEMICAL REACTIONS AT RELATIVELY LOW TEMPERATURES. A NATURAL EXTENSION OF THIS IS TO USE THIS PLASMA ENERGY TO LOWER THE TEMPERATURE REQUIRED TO OBTAIN A CRYSTALLINE DEPOSIT. THIS PAP. DISCUSSES THE APPLICATION OF PECVD FOR THE DEPOSITION OF MONOCRYSTALLINE (EPITAXY) AND POLYCRYSTALLINE SILICON, AND OF REFRACTORY METALS AND THEIR SILICIDES. IT IS EMPHASIZED THAT THE PECVD TECHNIQUE CAN BE USED TO DEPOSIT THESE SEMICONDUCTOR AND CONDUCTOR FILMS AT RELATIVELY LOW TEMPERATURES.
Desc.: CHEMICAL VAPOUR DEPOSITION; PLASMA DEPOSITION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR THIN FILMS; SILICON; ELEMENTAL SEMICONDUCTORS; METALS
Ident.: PLASMA ENHANCED CVD; SEMICONDUCTOR FILMS; SI; CONDUCTOR FILMS; PLASMA ENERGY; CHEMICAL REACTIONS; REFRACTORY METALS; SILICIDES
Class Codes: A8115H; A6855

Y012013 55 
1289208 A8407689
THERMODYNAMIC MECHANISM FOR CATION DIFFUSION THROUGH AN INTERGRANULAR PHASE: APPLICATION TO ENVIRONMENTAL REACTIONS WITH NITROGEN CERAMICS
CLARKE, D.R.
ROCKWELL INTERNAT. SCI. CENTER, THOUSAND OAKS, CA, USA
RILEY, F.L. (Editors)
Sponsor: NATO
PROGRESS IN NITROGEN CERAMICS. PROCEEDINGS OF THE NATO ADVANCED STUDY INSTITUTE 421-6 1983
27 JULY-7 AUG. 1981 FALMER, SUSSEX, ENGLAND
Publ: MARTINUS NIJHOFF, BOSTON, MA, USA
XIX+93 pp. ISBN 90 247 2828 2
Treatment: THEORETICAL
Doc. Type: CONF. PAP.
Lang.: Eng. (16 Refs)
A MECHANISTIC MODEL FOR THE MIGRATION OF CATIONS FROM A CONTINUOUS INTERGRANULAR PHASE IN RESPONSE TO ENVIRONMENTAL REACTION AT THE SURFACE OF POLYPHASE SILICON NITRIDES IS DESCRIBED. IT PREDICTS THAT THE COMPOSITION OF THE INTERGRANULAR PHASE MAY BE MODIFIED AND CONTROLLED, WITH CONSEQUENTIAL BENEFICIAL OR DETRIMENTAL EFFECTS, BY THE DELIBERATE FORMATION OF SURFACE SCALES RICH OR POOR IN IMPURITY CATIONS. TWO EXAMPLES ARE ILLUSTRATED, 'PURIFICATION' OF THE INTERGRANULAR PHASE USING AN SIO/SUB 2/ SURFACE LAYER LEADING TO HIGH TEMPERATURE STRENGTH ENHANCEMENT AND STRENGTH DEGRADATION AND CORROSION WHEN A CAO-RICH SURFACE LAYER IS EMPLOYED.
Desc.: SILICON COMPOUNDS; CERAMICS; IMPURITIES; DIFFUSION IN SOLIDS ; SURFACE CHEMISTRY; CORROSION
Ident.: N-BASED CERAMICS; SI/SUB 3/N/SUB 4/; POLYPHASE CERAMICS; CATION MIGRATION; THERMODYNAMIC DIFFUSION MECHANISM; CATION DIFFUSION; INTERGRANULAR PHASE; ENVIRONMENTAL REACTIONS; NITROGEN CERAMICS; MECHANISTIC MODEL; SURFACE SCALES; IMPURITY CATIONS SIO/SUB 2/ SURFACE LAYER; HIGH TEMPERATURE STRENGTH; STRENGTH DEGRADATION; CORROSION; CAO-RICH SURFACE LAYER
Class Codes: A8160D; A8265D; A6630J

Y012013 56 
1289154 A84076832
PARAMETER STUDIES ON THE OXIDATION AND THE STRENGTH BEHAVIOUR OF SILICON NITRIDE
SIEBELS, J.E.
VOLKSWAGENWERK AG, WOLFSBURG, GERMANY
RILEY, F.L. (Editors)
Sponsor: NATO
PROGRESS IN NITROGEN CERAMICS. PROCEEDINGS OF THE NATO ADVANCED STUDY INSTITUTE 529-38 1983.
27 JULY-7 AUG. 1981 FALMER, SUSSEX, ENGLAND
Publ: MARTINUS NIJHOFF, BOSTON, MA, USA
XIX+793 pp. ISBN 90 247 2828 2
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng.
THE STABILITY OF REACTION BONDED SI/SUB 3/N/SUB 4/ AFTER LONG OXIDATION TIMES IS DETERMINED. THE ROOM TEMPERATURE AND HIGH TEMPERATURE FLEXURAL STRENGTHS AND THE EFFECTS OF ANNEALING ARE DISCUSSED.
Desc.: SILICON COMPOUNDS; CERAMICS; BENDING STRENGTH; OXIDATION; ANNEALING; POWDER TECHNOLOGY
Ident.: STABILITY; REACTION BONDED SI/SUB 3/N/SUB 4; LONG OXIDATION TIMES; ROOM TEMPERATURE; HIGH TEMPERATURE FLEXURAL STRENGTHS; ANNEALING
Class Codes: A8140L; A62?0F; A8140G; A8160D; A8120E

Y012013 57 
1289065 A84076743
HINDRANCE OF GRAIN GROWTH IN AL/SUB 2/O/SUB 3/ BY ZRO/SUB 2/ INCLUSIONS
LANGE, F.F.; HIRLINGER, M.M.
STRUCTURAL CERAMICS, ROCKWELL INTERNAT. SCI. CENTER, THOUSAND OAKS, CA, USA
J. AM. CERAM. SOC. (USA) VOL.67, NO.3 164-8 MARCH 1984 CODEN: JACTAW
ISSN: 0002-7820
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (11 Refs)
ALUMINA AND AL/SUB 2/O/SU 3//ZRO/SUB 2/ (1 TO 10 VOL.PERCENT ) COMPOSITE POWDERS WERE MIXED AND CONSOLIDATED BY A COLLOIDAL METHOD, SINTERED TO
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
Desc.: ALUMINA; ZIRCONIUM COMPOUNDS; GRAIN GROWTH; SINTERING GRAIN SIZE; VOIDS (SOLID); SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS GRAIN BOUNDARIES; COMPOSITE MATERIALS; CERAMICS; POWDER TECHNOLOGY
Ident.: AL/SUB 2/O/SUB 3/-ZRO/SUB 2/ COMPOSITES; SEM; GRAIN GROWTH HINDRANCE; GRAIN BOUNDARIES; GRAIN GROWTH CONTROL; POWDER TECHNOLOGY; ZRO/SUB 2/ INCLUSIONS; THEORETICAL DENSITY; SELF-DIFFUSION; 4-GRAIN JUNCTIONS; GRAIN SIZE; ABNORMAL GRAIN GROWTH; SINGLE-PHASE MATERIALS; NONUNIFORM DISTRIBUTION; VOIDS; SINTERING
Class Codes: A8130; A8120N; A6170N; A8120E

Y012013 58 
1289059 A84076737
THE PREPARATION AND PROPERTIES OF OXYNITRIDE GLASSES
DREW, R.A.L.; HAMPSHIRE, S.; JACK, K.H.
CRYSTALLOGRAPHY LAB., UNIV. OF NEWCASTLE UPON TYNE, NEWCASTLE UPON TYNE, ENGLAND
RILEY, F.L. (Editors)
Sponsor: NATO
PROGRESS IN NITROGEN CERAMICS. PROCEEDINGS OF ThE NATO ADVANCED STUDY INSTITUTE 323-30 1983
27 JULY-7 AUG. 1981 FALMER, SUSSEX, ENGLAND
Publ: MARTINU NIJHOFF, BOSTON, MA, USA
XIX+793 pp. ISBN 90 247 2828 2
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (6 Refs)
GLASSES CONTAINING MORE THAN 15A/O N IN M-SI-AL-O-N SYSTEMS WHERE M IS MG, CA, Y AND ND ARE OBTAINED BY FUSING POWDER MIXTURES OF THE METAL OXIDE WITH SIO/SUB 2/, AL/SUB 2/O/SUB 3/, SI/SUB 3/N/SUB 4/ AND ALN AT 1700 DEGREESC AND ABOVE, AND THEN COOLING IN A NITROGEN ATMOSPHERE AT NOT GREATER THAN 200 DEGREESC/MIN. WITH THE SAME CATION COMPOSITION, VISCOSITY, GLASS TRANSITION TEMPERATURE, RESISTANCE TO DIVITRIFICATION AND REFRACTIVE INDEX ALL INCREASE INITIALLY WITH INCREASING NITROGEN CONCENTRATION. THE CHARACTERIZATION OF GRAIN-BOUNDARY VITREOUS PHASES IN SILICON NITRIDE AND IN BETA MINUTES -SIALONS DENSIFIED WITH MGO AND Y/SUB 2/O/SUB 3/ IS IMPORTANT BECAUSE THEY OFTEN DETERMINE THE HIGH-TEMPERATURE BEHAVIOUR OF THE CERAMIC. THEIR DEVITRIFICATION CAN PRODUCE METASTABLE PHASES THAT OTHERWISE ARE NOT OBTAINABLE, E.. APPROPRIATE GLASS COMPOSITIONS IN THE MG-SI-AL-O-N SYSTEM GIVE (I) BETASECONDS -MAGNESIUM SIALONS WITH GREATLY EXPANDED PHENACITE STRUCTURES, AND (II) NITROGEN PETALITE, MG/SUB 2/SIALO/SUB 4/N.
Desc.: GLASS; MATERIALS PREPARATION; VITRIFICATION; GRAIN BOUNDARIES; CERAMICS; POWDER TECHNOLOGY; GLASS TRANSITION (GLASSES); MAGNESIUM COMPOUNDS; CALCIUM COMPOUNDS; YTTRIUM COMPOUNDS; NEODYMIUM COMPOUNDS; SILICON COMPOUNDS; ALUMIMIUM COMPOUNDS
Ident.: N CONCENTRATION; OXYNITRIDE GLASSES; M-SI-AL-O-N SYSTEMS; MG ; CA; Y; ND; FUSING POWDER MIXTURES; METAL OXIDE; SIO/SUB 2/; AL/SUB 2/O/SUB 3/; SI/SUB 3/N/SUB 4/; ALN; NITROGEN ATMOSPHERE; CATION COMPOSITION ; VISCOSITY; GLASS TRANSITION TEMPERATURE; RESISTANCE TO DEVITRIFICATION; REFRACTIVE INDEX; GRAIN-BOUNDARY VITREOUS PHASES; MGO; Y/SUB 2/O/SUB 3/; METASTABLE PHASES; MG-SI-AL-O-N SYSTEM; GREATLY EXPANDED PHENACITE STRUCTURES
Class Codes: A8120P; A8120E; A6170N

Y012013 59 
1289053 A84076731
HOT PRESSING OF ALUMINIUM NITRIDE
LECOMPTE, J.P.; JARRIGE, J.; MEXMAIN, J.
LAB. DE CERAMIQUES NOUVELLES, CNRS, LIMOGES, FRANCE
RILEY, F.L. (Editors)
Sponsor: NATO
PROGRESS IN NITROGEN CERAMICS. PROCEEDINGS OF THE NATO ADVANCED STUDY INSTITUTE 93-9 1983
27 JULY-7 AUG. 1981 FALMER, SUSSEX, ENGLAND
Publ: MARTINUS NIJHOFF, BOSTON, MA, USA
XIX+73 pp. ISBN 90 247 2828 2
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (13 ReFs)
ALUMINIUM NITRIDE CERAMICS HAVE A GOOD HIGH-TEMPERATURE CHEMICAL STABILITY IN CONTACT WITH METALS AND DIELECTRIC STUDIES OF HOT-PRESSED ALUMINIUM NITRIDE HAVE SHOWN THAT THE DIELECTRIC LOSSES ARE PARTICULARLY IMPORTANT AT LOWER FREQUENCIES. IT IS, HOWEVER, DIFFICULT TO PRODUCE HIGH PURITY ALUMINIUM NITRIDE FREE FROM OXYGEN CONTAMINATION AND IT IS NOW RECOGNIZED THAT AN OXYGEN CONTENT OF ABOUT 2 WT.PERCENT IS NECESSARY FOR OBTAINING FULL DENSITY. THE KINETICS OF HOT PRESSING OF COMMERCIAL ALUMINIUM NITRIDE POWDER, AND THE OXIDATION BEHAVIOUR AND MECHANICAL PROPERTIES OF THE DENSE MATERIAL ARE DISCUSSED.
Desc.: ALUMINIUM COMPOUNDS; HOT PRESSING; DENSIFICATION CERAMICS; POWDER TECHNOLOGY; BENDING STRENGTH; THERMAL EXPANSION; HARDNESS; POROSITY YOUNG'S MODULUS; OXIDATION
Ident.: ALN CERAMICS; BEND STRENGTH; MICROHARDNESS; POROSITY; YOUNG'S MODULUS; THERMAL EXPANSION COEFFICIENT KINETICS OF HOT PRESSING; COMMERCIAL ALUMINIUM NITRIDE POWDER; OXIDATION BEHAVIOUR; MECHANICAL PROPERTIES; DENSE MATERIAL
Class Codes: A8120L; A8120E; A8140L; A8140J; A8160D; A6220F; A6220D

Y012013 60 
1281864 A84065739, B84036361
STATIC AND DYNAMIC VOLT-AMPERE CHARACTERISTICS OF ELECTROLYTE-NITRIDE-OXIDE-SILICON SYSTEMS
SHIRSHOV, YU.M.; NABOK, A.V.
OPTOELEKTRON. AND POLUPROVODN. TEKH. (USSR) NO.4 46-50 1983 CODEN: OPTEDV
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: RUSSIAN (8 Refs)
MEASUREMENT OF THE STATIC VOLT-AMPERE CHARACTERISTICS OF A SI-SIO/SUB 2/-SI/SUB 3/N/SUB 4/ SYSTEM IN AQUEOUS AND NONAQUEOUS ELECTROLYTES SHOWS THAT THE AREA OF HIGH POLARISABILITY OF THE ELECTROLYTE-NITRIDE-OXIDE-SILICON (ENOS) SYSTEM IS LIMITED BY THE CATHODIC HYDROGEN REDUCTION POTENTIAL. THE PASSING OF A CATHODE CURRENT IN THE ENOS SYSTEM IS ACCOMPANIED BY ADSORPTION OF HYDROGEN IN THE MICROPORES OF THE DIELECTRIC, WHICH MAY BE DISORBED DURING ANODIC POLARISATION. USE OF THE DYNAMIC VOLT-AMPERE CHARACTERISTIC METHOD MAKES IT POSSIBLE TO DETERMINE THE MAGNITUDE AND CENTROID OF THE CHARGE CAPTURED IN THE SILICON NITRIDE.
Desc.: SEMICONDUCTOR-INSULATOR BOUNDARIES; SEMICONDUCTOR-ELECTROLY- TE BOUNDARIES; SILICON; ELEMENTAL SEMICONDUCTORS; SILICON COMPOUNDS; ABSORPTION; DIELECTRIC POLARISATION; DESORPTION
Ident.: SI/SIO/SUB 2//SI/SUB 3/N/SUB 4//ELECTROLYTE SYSTEM; DESORPTION; AQUEOUS ELECTROLYTE; H ADSORPTION; SEMICONDUCTOR; CATHODIC H REDUCTION POTENTIAL; DYNAMIC VOLT-AMPERE CHARACTERISTICS; STATIC VOLT-AMPERE CHARACTERISTICS; NONAQUEOUS ELECTROLYTES; HIGH POLARISABILITY; CATHODE CURRENT; MICROPORES; DIELECTRIC; ANODIC POLARISATION
Class Codes: A7340M; A7340Q; A6845D; A7730; B2530N; B2530F; B2520C

Y012013 61 
1271473 A84065562
REACTIONS OF NO WITH THE SI (111) (7*7) SURFACE: EELS, LEED AND AESTUDIES
NISHIJIMA, M.; KOBAYASHI, H.; EDAMOTO, K.; ONCHI, M.
DEPT. OF CHEM., KYOTO UNIV., KYOTO, JAPAN
SURF. SCI. (NETHERLANDS) VOL.137, NO.2-3 473-90 FEB. 1984 CODEN: SUSCAS
ISSN: 0039-6028
USCCC Code: 0039-6028/84/$03.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (29 Refs)
HIGH-RESOLUTION VIBRATIONAL ELECTRON ENERGY LOSS SPECTROSCOPY, LOW-ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY ARE USED TO STUDY THE REACTIONS OF NO WITH THE SI (111) (7*7) SURFACE. AT 300K, NO IS ADSORBED DISSOCIATIVELY ON THE (7*7) SURFACE IN THE DISORDERED STRUCTURE. THE N AND O ATOMS ARE CHEMISORBED IN THE O?-TOP SITES FORMING THE SI-N AND SI-O SINGLE BONDS WHICH ARE CHARACTERIZED BY THE VIBRATIONAL LOSSES AT 118-125 AND 100-105 MEV, RESPECTIVELY. THE MAXIMUM FRACTIONAL COVERAGES OF N AND O ATOMS ARE BOTH THETA=0.5. BY HEATING THE NO-SATURATED SURFACE AT 1150-1300K, THE ADSORBED OXYGEN IS REMOVED FROM THE SURFACE AND THE N-COVERED SURFACE IS RECONSTRUCTED TO FORM THE ' (8*8)'-N STRUCTURE WHICH IS CHARACTERIZED BY THE LOSSES AT 91 AND 120 MEV. THIS STRUCTURE IS PROPOSED TO ARISE FROM THE OVERLAYER IN WHICH EACH N ATOM IS BONDED TO THREE SI ATOMS WITH THE SP/SUB 3/-LIKE BONDS FORMING A HEXAGONAL LATTICE WITH UNIT MESH VECTORS OF 8/11 TIMES THOSE OF THE UNRECONSTRUCTED SI (111) SURFACE. AS THIS SURFACE IS FURTHER HEATED AT 1300-1350K, THE 'QUADRUPLET' STRUCTURE WHICH IS CHARACTERIZED BY THE LOSSES AT 61 AND 120 MEV IS FORMED. IT IS PROPOSED THAT THIS STRUCTURE HAS PLANAR GEOMETRY WITH EACH N ATOM BONDED TO THREE SI ATOS FORMING THE SP/SUP 2/-LIKE BONDS. THE SI-N BOND LENGTH IS ESTIMATED TO BE =1.7 AA. THE LOCAL STRUCTURE OF THE QADRUPLET SURFACE IS VERY SIMILAR TO THAT OF THE BULK SILICON NITRIDE (SI/SUB 3/N/SUB 4/).
Desc.: SILICON; ELEMENTAL SEMICONDUCTORS; ADSORPTION; ELECTRON ENERGY LOSS SPECTRA; LOW ENERGY ELECTRON DIFFRACTION; AUGER EFFECT; SURFACE CHEMISTRY; CRYSTAL SURFACE AND INTERFACE VIBRATIONS; NITROGEN COMPOUNDS
Ident.: HIGH RESOLUTION VIBRATIONAL EELS; (7*7) SI (111) SURFACE; SEMICONDUCTOR; DISSOCIATIVE ADSORPTION; SURFACE RECONSTRUCTION; NO; LEED; AES; REACTIONS; DISORDERED STRUCTURE; MAXIMUM FRACTIONAL COVERAGES; HEXAGONAL LATTICE; QUADRUPLET SURFACE
Class Codes: A6845D; A6830; A7920K; A8265M; A8265J

Y012013 62 
1260145 A84062099
THE IMPROVED CORROSION RESISTANCE OF STEEL IN WATER AFTER ABRASIVE BLASTING WITH ALUMINA
LEIDHEISER, H., JR.; MUSIC, S.; MCINTYRE, J.F.
DEPT. OF CHEM. AND CENTER FOR SURFACE AND COATINGS RES., LEHIGH UNIV., BETHLEHEM, PA, USA
CORROS. SCI. (GB) VOL.24, NO.3 197-208 1984 CODEN: CRRSAA
ISSN: 0010-938X
USCCC Code: 0010-938X/84$3.00+0.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
POLARIZED RESISTANCE STUDIES AND CATHODIC DELAMINATIONS STUDIES PROVIDE EVIDENCE THAT STEEL ABRASIVELY BLASTED WITH ALUMINA EXHIBITS A LOWER INITIAL RATE OF CORROSION IN DISTILLED WATER THAN SIMILAR STEELS BLASTED WITH STEEL GRIT OR ABRADED WITH SILICON CARBIDE PAP.. AUGER SPECTROSCOPY AND ELECTRON MICROPROBE ANALYSIS REVEALED THE PRESENCE OF SIGNIFICANT ALUMINIUM ON THE SURFACE, LARGELY IN THE FORM OF EMBEDDED PARTICLES BUT POSSIBLY ALSO AS A CONSTITUENT OF THE OXIDE FILM. NON-METALLIC ABRASIVE BLASTING MAY HAVE APPLICATION IN THE CHEMICAL MODIFICATION OF METAL SURFACES.
Desc.: CORROSION PROTECTION; AUGER EFFECT; ELECTRON PROBE ANALYSIS STEEL; ALUMINA
Ident.: SURFACE CHEMICAL MODIFICATION; POLARISATION RESISTANCE; AL/SUB 2/O/SUB 3/ ABRASIVE BLASTED STEEL; CORROSION RESISTANCE; WATER; ABRASIVE BLASTING; CATHODIC DELAMINATIONS; AUGER SPECTROSCOPY; ELECTRON MICROPROBE ANALYSIS
CLass Codes: A8160B

Y012013 63 
1260112 A84062059
EFFECTS OF OXIDATION UPON FLAW POPULATIONS OF REACTION BONDE SILICON NITRIDE
LAMON, J.; BOUSSUGE, M.
ECOLE NAT. SUPERIEURE DES MINES DE PARIS, EVRY, FRANCE
VINCENZII, P. (Editors)
SCIENCE OF CERAMICS. PROCEEDINGS OF THE TWELFTH INTERNATIONAL CONF.
621-7 1984
27-30 JUNE 1983 SAINT-VINCENT, ITALY
Publ: CERAMURGICA, ITALY
XVI+770 pp.
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (10 Refs)
A DIVERSE SPAN BENDING TECHNIQUE HAS BEEN USED FOR THE DETERMINATION OF THE ROOM TEMPERATURE STRENGTH DISTRIBUTIONS OF A RBSN AFTER OXIDATION AT 1200 DEGREESC. A MULTIAXIAL APPROACH OF FRACTURE THEN PERMITTED TO DETERMINE THE STATISTICAL PARAMETERS OF THE INTERNAL FRACTURE INDUCING FLAW POPULATIONS. THESE INTERNAL FLAW POPULATIONS WERE TRANSIENT IN NATURE, AND HAVE BEEN SHOWN TO EXERT A MAJOR INFLUENCE ON THE ROOM TEMPERATURE STRENGTH OF RBSN.
Desc.: CERAMICS; SILICON COMPOUNDS; OXIDATION; FRACTURE; BENDING STRENGTH; CRACKS
Ident.: REACTION BONDED SI/SUB 3/N/SUB 4/; CERAMICS; OXIDATION; BENDING TECHNIQUE; RBSN; FRACTURE; INTERNAL FLAW POPULATIONS; ROOM TEMPERATURE STRENGTH
Class Codes: A8140N; A6220M; A8160D

Y012013 64 
1259963 A84061908
DEVELOPMENT OF REACTION-BONDED SILICON CARBIDE (SISIC) CERAMICS
GYARMAT, E.; GUPTA, A.K.
Issued by: KERNFORSCHUNGSANLAGE, JULICH, GERMANY;
OCT. 1983
57 pp.
Report No.: JUL-1873
Treatment: PRACTICAL; EXPERIMENTAL
Doc. Type: REPORT
Lang.: GERMAN (34 Refs)
THE PRESENT STUDY INITIALLY DEALS WITH VARIOUS METHODS OF SIC PRODUCTION. IN PARTICULAR, THE METHOD FOR PRODUCING REACTION-BONDED SILICON CARBIDE (SISIC) IS DESCRIBED. CONNECTIONS ARE DERIVED AND DISCUSSED BETWEEN THE DIFFERENT DENSITIES OF THE PRELIMINARY AND FINAL PRODUCTS. GREEN BODIES WERE FABRICATED ACCORDING TO THREE TYPES OF INGREDIENTS SHOWING CLEAR DIFFERENCES MAINLY IN BENDING STRENGTH AT ROOM TEMPERATURE AFTER SILICONIZING BY THE IMMERSION METHOD. THE MOST FAVOURABLE PRODUCTION PARAMETERS SIGMA>/SUB B/=336 MPA AND RHO>/SUB B/=3.01 G/CM/SUP 3/ WERE FOUND; HOWEVER, PEAK VALUES OF UP TO SIGMA=442 MPA AND RHO=3.10 G/CM/SUP 3/ WERE ACHIEVED. THE MEASURED PROPERTY VALUES WERE CORRELATED AND INTERPRETED WITH THE AID OF STEREOMETRICALLY QUANTIFIED PHASES.
Desc.: CERAMICS; SILICON COMPOUNDS; DENSIFICATION; POWDER TECHNOLOGY; BENDING STRENGTH
Ident.: GREEN BODIES; PRODUCTION METHODS; CERAMICS; SIC PRODUCTION; REACTION-BONDED; DENSITIES; BENDING STRENGTH; ROOM TEMPERATURE; SILICONIZING; IMMERSION METHOD; PRODUCTION PARAMETERS
Class Codes: A8120L; A8120E

Y012013 65 
1259128 A84060896
CRYSTAL-CHEMICAL PROPERTIES OF THE POLYTYPES OF SILICON CARBIDE
SOROKIN, N.D.; TAIROV, YU. M.; TSVETKOV, V.F.; CHERNOV, M.A.
LENINGRAD ELECTROTECH. INST., LENINGRAD, USSR
KRISTALLOGRAFIYA (USSR) VOL.28, NO.5 910-14 SEPT.-OCT. 1983 CODEN: KRISAJ
ISSN: 0023-761
Trans in: SOV. PHYS.-CRYSTALLOGR. (USA) VOL.28, NO.5 539-42 SEPT.-OCT. 1983 CODEN: SPHCA6
ISSN: 00385638
USCCC Code: 0038-5638/83/050539-04$03.90
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (20 Refs)
THE AUTHORS HAVE MADE A COMBINED INVESTIGATION OF THE CRYSTAL-CHEMICAL PROPERTIES OF SINGLE CRYSTALS OF THE POLYTYPES OF SIC, GROWN BY SUBLIMATION AT 2600 DEGREESC. ON THE SAME CRYSTALS THEY DETERMINE THE EFFECTIVE CHARGE ON THE SILICON ATOMS, THE COMPOSITION, THE LATTICE PARAMETERS, AND THE DENSITY. THEY ESTABLISH HOW THESE DEPEND ON THE DEGREE OF HEXAGONALITY. THEY SHOW THAT THE CRYSTALS HAVE A NONSTOICHIOMETRIC COMPOSITION; THE PREDOMINANT DEFECTS ARE VACANCIES.
Desc.: SILICON COMPOUNDS; POLYMORPHISM; CRYSTAL CHEMISTRY; CRYSTAL ATOMIC STRUCTURE OF INORGANIC COMPOUNDS; CHEMICAL ANALYSIS; DENSITY OF SOLIDS VACANCIES (CRYSTAL)
Ident.: POLYMORPHISM; CRYSTAL CHEMISTRY; MICROANALYSIS; SUBLIMATION GROWTH; X-RAY SPECTRA; POLYTYPES; SIC; EFFECTIVE CHARGE; LATTICE PARAMETERS ; DENSITY; HEXAGONALITY; NONSTOICHIOMETRIC COMPOSITION; VACANCIES
Class Codes: A6160; A8280D; A6220; A6170B

Y012013 66 
1255942 A84057142
EFFECTS OF VARIABILITY OF THE BASE POWDER ON THE SINTERING OF BETA-SIC
WILLIAMS, R.M.; JUTERBOCK, B.N.; PETERS, C.R.; WHALEN, T.J.
FORD MOTOR CO., DEARBORN, MI, USA
J. MATER. SCI. LETT. (GB) VOL.3, NO.3 265-7 MARCH 1984 CODEN: JMTSAS
ISSN: 0261-8028
USCCC Code: 0261-8028/84/$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (2 Refs)
CONCERNS THE IMPORTANCE OF USING STARTING POWDERS WITH RIGIDLY CONTROLLED CHEMICAL AND CRYSTALLOGRAPHIC COMPOSITION AND PHYSICAL CHARACTERISTICS. THE VARIATIONS OBSERVED IN PHYSICAL PROPERTIES AND IN TEMPERATURES AT WHICH PHASE TRANSFORMATIONS OCCUR ARE QUITE SIGNIFICANT COMPARED TO THE RELATIVELY SMALL DIFFERENCES IN THE PHYSICAL AND CHEMICAL PROPERTIES OF THE STARTING POWDERS. A RIGID CONTROL THEREFORE APPEARS TO BE VERY IMPORTANT IN ORDER TO OBTAIN A UNIFORM, REPRODUCIBLE SINTERABLE SIC POWDER.
Desc.: SILICON COMPOUNDS; SINTERING; POWDER TECHNOLOGY; CERAMICS
Ident.: CHEMICAL COMPOSITION; BASE POWDER; SINTERING; BETA-SIC; CRYSTALLOGRAPHIC COMPOSITION
Class Codes: A8120L; A8120E

Y012013 67 
1247763 A84050693, B84023909
PLASMA ENHANCED DEPOSITION OF 'SILICON NITRIDE' FOR USE AS AN ENCAPSULANT FOR SILICON ION-IMPLANTED GALLIUM ARSENIDE
BARTL, D.C.; ANDREWS, D.C.; GRANGE, J.D.; HARRIS, P.G.; TRIGG, A.D.; WICKENDEN, D.K.
GEC RES. LABS., HIRST RES. CENTRE, WEMBLEY, ENGLAND
VACUUM (GB) VOL.34, NO.1-2 315-20 JAN.-FEB. 1984 CODEN: VACUAV
ISSN: 0042-207X
PROCEEDINGS OF THE 3RD INTERNATIONAL CONF. ON LOW ENERGY ION BEAMS
28-31 MARCH 1983 LOUGHBOROUGH, ENGLAND
USCCC Code: 0042-207X/84$3.00+.00
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (17 Refs)
SILICON NITRIDE FILMS HAVE BEEN PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION USNG SILANE AND AMMONIA AS THE REACTANT GASES IN A PLASMA-THERM PK1250PD MACHINE. THE COMPOSITIONS OF THE FILES HAVE BEEN INVESTIGATED AS A FUNCTION OF THE SILANE TO AMMONIA FLOW RATE RATIO USED FOR DEPOSITION, USING INFRA-RED TRANSMISSION AND AUGER ELECTRON SPECTROSCOPIES. THESE TECHNIQUES INDICATED THAT THE PLASMA DEPOSITED FILMS WERE SILICON-RICH AND CONTAINED HYDROGEN. THE OXYGEN CONTENT OF THE FILMS WAS BELOW THE DETECTION LIMIT OF AUGER ELECTRON SPECTROSCOPY IMPLYING THAT IT WAS LESS THAN 1PERCENT . SILICON ION-IMPLANTED SEMI-INSULATING GALLIUM ARSENIDE HAS BEEN ANNEALED USING AN APPROXIMATELY 100 AA THICK FILM OF PLASMA DEPOSITED SILICON NITRIDE AS AN ENCAPSULANT. THIS CAPPED ANNEALING TECHNIQUE HAS ACHIEVED 70PERCENT ACTIVATIONS OF 4*10/SUP 12/ CM/SUP -2/, 200 KEV SILICON IMPLANTS WITH SHEET HALL MOBILITIES OF 4000 CM/SUP 2/ V/SUP -1/S/SUP -1/ AT ROOM TEMPERATURE. FREE CARRIER CONCENTCATION AND HALL MOBILITY PROFILES ARE PRESENTED. UNIMPLANTED SEMI-INSULATING GALLIUM ARSENIDE SAMPLES HAVE ALSO BEEN CAPPED ANNEALED IN THE SAME MANNER AND MAINTAINED A SHEET RESISTIVITY OF GREATER THAN 10/SUP 7/ OMEGA/SQUIRE AFTER ANNEALING.
Desc.: PLASMA DEPOSITED COATINGS; ANNEALING; HALL EFFECT; AUGER EFFECT; INFRARED SPECTRA OF INORGANIC SOLIDS; ENCAPSULATION; SILICON COMPOUNDS; III-V SEMICONDUCTORS; GALLIUM ARSENIDE; ELECTRICAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS AND INSULATORS; SILICON; ANNEALING; HALL EFFECT; SILICON; CARRIER DENSITY
Ident.: IR TRANSMISSION SPECTROSCOPY; FREE CARRIER CONCENTRATION; ENCAPSULATION; SI/SUB 3/N/SUB 4/ FILM; III-V SEMICONDUCTORS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SILANE; PLASMA-THERM PK1250PD MACHINE AMMONIA FLOW RATE; AUGER ELECTRON SPECTROSCOPIES; PLASMA DEPOSITED FILMS; CAPPED ANNEALING TECHNIQUE; SHEET HALL MOBILITIES; HALL MOBILITY PROFILES; SHEET RESISTIVITY; ANNEALING
Class Codes: A6855; A8115J; A7220M; A7220J; A7?30G; A7280E; B0520F; B0170J; B2520D

Y012013 68 
1243080 A84051586
SILICON CARBIDE FIBRES AND THEIR POTENTIAL FOR USE IN COMPOSITE MATERIALS. II
WARREN, R.; ANDERSSON, C.-H.
CHALMERS UNIV. OF TECHNOL., GOTEBORG, SWEDEN
COMPOSITES (GB) VOL.15, NO.2 101-11 APRIL 1984 CODEN: CPSOAN
ISSN: 0010-4361
USCCC Code: 0010-4361/84/020101-11$03.00
Treatment: BIBLIOGRAPHY; GENERAL, REVIEW
Doc. Type: JRNL PAP.
Lang.: Eng. (67 Refs)
FOR PT.I SEE IBID. THE CHEMICAL PROPERTIES OF SIC TO THE USE OF SIC FIBRES AS A REINFORCEMENT IN METAL MATRIX COMPOSITE MATERIALS ARE REVIEWED. PARTICULAR ATTENTION IS PAID TO THE OXIDATION OF SIC, AND TO THE INTERACTION OF SIC WITH METALS AND ALLOYS WITH RESPECT TO CHEMICAL INTERACTIONS AND FIBRE/MATRIX BONDING.
Desc.: REVIEWS; PHASE EQUILIBRIUM; OXIDATION; SILICON COMPOUNDS; FIBRE REINFORCED COMPOSITES; INTERFACE PHENOMENA; WETTING
Ident.: SIC FIBRE REINFORCED COMPOSITES; FIBRE-MATRIX BINDING; OXIDATION RESISTANCE; PHASE EQUILIBRIA; WETTABILITY; SIC FIBRES; METAL MATRIX COMPOSITE; CHEMICAL INTERACTIONS
Class Codes: A8120J; A8130D; A0130R

Y012013 69 
1242961 A84051421
ELECTRON AND ION BEAM EFFECTS IN AES AALYSIS OF SILICON NITRIDE THIN FILMS
VANDEN BERGHE, R.; HINOUL, M.; VLAEMINCK, R.; FRANSEN, F.; VENNIK, J.
LAB. VOOR KRISTALLOGRAFIE EN STUDIE VAN DE VASTE STOF, RIJKSUNIV. GENT, GENT, BELGIUM;
VIDE LES COUCHES MINCES (FRANCE) VOL.38, NO.215, SUPPL. 189-9 JAN.-FEB. 1983 CODEN: VCMIDS
ISSN: 0223-4335
ECOLE D'HIVER SUR LES SPECTROMETRIES D'ELECTRONS ESCA - AUGER. ELECTRONS SECONDAIRES PERTES D'ENERGIE (WINTER SCHOOL ON THE ESCA AND AUGER ELECTRON SPECTROMETRIES. SECONDARY ELECTRON ENERGY LOSSES) 24-28 JAN. 1983 LES ARCS - BOURG SAINT MAURICE, FRANCE
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (2 Refs)
ATMOSPHERIC PRESSURE CHEMICAL VAPOUR DEPOSITED (APCVD) SILICON NITRIDE FILMS AND LOW PRESSURE CHEMICAL VAPOUR DEPOSITED (LPCVD) SILICON NITRIDE FILMS WERE ANALYSED BY ?ES COMBINED WITH ION PROFILING TECHNIQUES. ION EFFECTS WERE STUDIED USING MONOENERGETIC ARGON ION BEAMS OF ENERGIES UP TO 4 KEV, EITHER IN POINT IMPACT OR IN SCANNING MODE. IN AN ATTEMPT TO OBSERVE PREFERENTIAL SPUTTER EFFECTS WITHOUT INTERFERENCE OF ELECTRON BEAM EFFECT, THE ELECTRON BEAM DENSITY WAS REDUCED TO 0.01 A/CM/SUP 2/. THE STEADY-STATE PEAK-TO-PEAK (PPH) RATIO SI (LVV)/N (KLL) WAS NOT AFFECTED BY CHANGING THE ION ENERGY FROM 2 TO 4 KEV. THEREFORE, IT MY BE CONCLUDED THAT THERE IS EITHER NO PREFERENTIAL SPUTTERING IN THE SAMPLES, OR THE PREFERENTIAL SPUTTERING EFFECTS ARE THE SAME FOR 2 AND 4 KEV ARGON ION BEAMS.
Desc.: SILICON COMPOUNDS; INSULATING THIN FILMS; AUGER EFFECT; ION BEAM EFFECTS; ELECTRON BEAM EFFECTS; CVD COATINGS; SPUTTERING
Ident.: ELECTRON BEAM EFFECTS; SI/SUB 3/N/SUB 4/ THIN FILM; CVD LAYER; ION BEAM EFFECTS; AES ANALYSIS; ION PROFILING; PREFERENTIAL SPUTTER EFFETS
Class Codes: A7920F; A6180J; A6180F; A7920N

Y012013 70 
1242136 A84050402
CORRELATION OF TENSILE AND SHEAR STRENGTHS OF METALS WITH THEIR FRICTION PROPERTIES
MIYOSHI, K.; BUCKLEY, D.H.
LEWIS RES. CENTER, NASA, CLEVELAND, OH, USA
ASLE TRANS. (USA) VOL.27, NO.1 15-23 JAN. 1984 CODEN: ASLTA2
ISSN: 0569-8197
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (29 Refs)
THE RELATION BETWEEN THE THEORETICAL TENSILE AND THE SHEAR STRENGTHS AND THE FRICTION PROPERTIES OF METALS IN CONTACT WITH DIAMOND, BORON NITRIDE, SILICON CARBIDE, MANGANESE-ZINC FERRITE, AND THE METALS THEMSELVES IN VACUUM WAS INVESTIGATED. THE RELATIONSHIP BETWEEN THE ACTUAL SHEAR STRENGTH AND THE FRICTION PROPERTIES OF THE METAL WAS ALSO INVESTIGATED. AN ESTIMATE OF THE THEORETICAL UNIAXIAL TENSILE STRENGTH WAS OBTAINED IN TERMS OF THE EQUILIBRIUM SURFACE ENERGY, INTERPLANAR SPACING OF THE PLANES PERPENDICULAR TO THE TENSILE AXIS, AND THE YOUNG'S MODULUS OF ELASTICITY. AN ESTIMATE OF THE THEORETICAL SHEAR STRENGTH FOR METALS WAS OBTAINED FROM THE SHEAR MODULUS, THE REPEAT DISTANCE OF ATOMS IN THE DIRECTION OF SHEAR OF THE METAL, AND THE INTERPLANAR SPACING OF THE SHEAR PLANES. THE COEFFICIENT OF FRICTION FOR METALS WAS FOUND TO BE RELATED TO THE THEORETICAL TENSILE, THEORETICAL SHEAR, AND ACTUAL SHEAR STRENGTHS OF METALS. THE HIGHER THE STRENGTH OF THE METAL, THE LOWER THE COEFFICIENT OF FRICTION.
Desc.: METALS; FRICTION; TENSILE STRENGTH; YOUNG'S MODULUS; SHEAR STRENGTH; SHEAR MODULUS; SURFACE ENERGY; LATTICE CONSTANTS
Ident.: CHEMICAL ACTIVITY; BN; SIC; MN-ZN FERRITE; SHEAR STRENGTHS; FRICTION PROPERTIES; METALS; CONTACT; DIAMOND; VACUUM; THEORETICAL UNIAXIAL TENSILE STRENGTH; EQUILIBRIUM SURFACE ENERGY; INTERPLANAR SPACING; YOUNG'S MODULUS OF ELASTICITY; SHEAR MODULUS; REPEAT DISTANCE OF ATOMS; COEFFICIENT OF FRICTION
Class Codes: A6220F; A8140L; A6220P; A6220D; A8140P; A8140J; A6840

Y012013 71 
1209016 A84030494
VIBRONIC STRUCTURE OF D/SUB 1/ SPECTRA OF IRRADIATED SILICON CARBIDE
SULEIMANOV, YU.M.; GREKHOV, A.M.; GREKHOV, V.M.
T.G. SHEVCHENKO STATE UNIV., KIEV, UKRAINIAN SSR
FIZ. TVERD. TLA (USSR) VOL.25, NO.6 1840-3 JUNE 1983 CODEN: FTVTAC
ISSN: 0367-3294
Trans in: SOV. PHYS.-SOLID STATE (USA VOL.25, NO.6 1060-1 JUNE 1983 CODEN: SPSSA7
ISSN: 0038-5654
USCCC Code: 0038-5654/83/061060-02$03.90
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
THE AUTHORS' AIM WAS TO MAKE A DETAILED STUDY OF THE VIBRATIONAL STRUCTURE OF THE ABSORPTION AND LUMINESCENCE SPECTRA OF D/SUB 1/ CENTERS, WHICH WERE OBTAINED WITH A HIGH RESOLUTION AT LOW TEMPERATURES, AS WELL AS TO CHOOSE A WORKING MODEL OF THESE CENTERS CONSISTENT WITH THE EXPERIMENTAL DATA. THEY PRESENT THE TRANSMISSION SPECTRA AND THE PHOTOLUMINESCENCE SPECTRA OF ALPHA-SIC (6H) CRYSTALS BOMBARDED WITH REACTOR NEUTRONS AND HEAT-TREATED. THE SPECTRA WERE TAKEN AT TEMPERATURES OF 4.2K AND 77K AT TWO POLARIZATIONS OF THE ELECTRIC VECTOR E: E>C AND E>C. THE PARAMETERS OF THE QUASILING STRUCTURE OF THESE SPECTRA ARE GIVEN. FOR COMPARISON, THE AUTHORS SHOW PORTIONS OF THE ELECTROLUMINESCENCE SPECTRA OF A BETA-SIC CRYSTAL BOMBARDED WITH AL/SUP +/ IONS, TAKEN AT 77K IN TWO POLARIZATIONS RELATIVE TO THE CRYSTALLOGRAPHIC (111)/SUB C/ AXIS: E> (111)/SUB C/ AND E> (111)/SUB C/. ALL OF THE SPECIES WERE OBTAINED ON A DFS-12 SPECTROMETER.
Desc.: SILICON COMPOUNDS; POINT DEFECTS; NEUTRON EFFECTS; MOLECULAR VIBRATION IN SOLIDS; VISIBLE AND ULTRAVIOLET SPECTRA OF INORGANIC SOLIDS; IMPURITY AND DEFECT ABSORPTION SPECTRA OF INORGANIC SOLIDS; DEFECT ELECTRON ENERGY STATES; PHOTOLUMINESCENCE; LUMINESCENCE OF INORGANIC SOLIDS; ELECTROLUMINESCENCE
Ident.: SIC; NEUTRON IRRADIATION; HEAT TREATMENT; ABSORPTION SPECTRA ; VIBRONIC STRUCTURE; D/SUB 1/ SPECTRA; VIBRATIONAL STRUCTURE; LUMINESCENCE SPECTRA; D/SUB 1/ CENTERS; TRANSMISSION SPECTRA; PHOTOLUMINESCENCE SPECTRA QUASILINE STRUCTURE; ELECTROLUMINESCENCE SPECTRA
Class Codes: A7850E; A6180H; A6320; A7155F; A6170B; A7840F; A7855D; A7860F

Y012013 72 
1208990 A84030468
FAR-INFRARED ABSORPTION MEASUREMENTS OF GRAPHITE, AMORPHOUS CARBON, AND SILICON CARBIDE
TANABE, .; NAKADA, Y.; KAMIJO, F.; SAKATA, A.
DEPT. OF ASTRON., UNIV. OF TOKYO, TOKYO, JAPAN
PUBL. ASTRON. SOC. JPN. (JAPAN) VOL.35, NO.3 397-404 1983 CODEN: PASJAC
ISSN: 0004-6264
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (20 Refs)
THE FAR-INFRARED TRANSMISSION MEASUREMENTS HAVE BEEN MADE AND THE MASS ABSORPTION COEFFICIENTS ARE FOUND FOR GRAINS OF GRAPHITE, AMORPHOUS CARBON, AND SILICON CARBIDE IN THE WAVELENGTH REGION OF LAMDALAMDA25-250 MUM, AT ROOM TEMPERATURE. THE ABSORPTION MEASUREMENT OF SILICON CARBIDE IS THE FIRST ONE IN THIS WAVELENGTH REGION. THE MASS ABSORPTION COEFFICIENTS ARE ALL FAIRLY WELL APPROXIMATED BY POWER-LAW WAVELENGTH DEPENDENCES. APPLICATION OF THE ABSORPTION COEFFICIENTS TO THE DUST CLOUD OF IC+10216 SHOWS THAT THE AMORPHOUS CARBON GRAIN IS THE MOST LIKELY CANDIDATE FOR THE CIRCUMSTELLAR DUST AND THAT THE ESTIMATED TOTAL MASS OF THE DUST IS 1*10/SUP -4/ M/SUB >/.
Desc.: GRAPHITE; OPTICAL CONSTANTS; INFRARED SPECTRA OF INORGANIC SOLIDS; INFRARED SPECTRA OF INORGANIC SOLIDS; OPTICAL CONSTANTS; AMORPHOUS STATE; CARBON; SILICON COMPOUNDS; OPTICAL CONSTANTS; INFRARED SPECTRA OF INORGANIC SOLIDS; CIRCUMSTELLAR SHELLS; COSMIC DUST; INFRARED SOURCES (ASTRONOMICAL); RADIOSOURCES (ASTRONOMICAL); VARIABLE STARS; GIANT STARS
Ident.: CW LEONIS; AFL 1381; IR; AMORPHOUS C; OPTICAL CONSTANT; SIC ; GIANT STAR; VARIABLE STAR; RADIO SOURCE; MICRONS 0025 TO 0250; FAR-INFRARED; MASS ABSORPTION COEFFICIENTS; GRAINS; GRAPHITE; POWER-LAW WAVELENGTH DEPENDENCES; DUST CLOUD; IRC+10216; CIRCUMSTELLAR DUST
Class Codes: A7830; A7820D; A9720L; A9530; A9730J; A9870L; A9710F; A9870D

Y012013 73 
125034 A84025900, B84008596
ION BOMBARDMENT EFFECTS IN PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS: A COMPARATIVE STUDY OF DC AND RF DISCHARGES
CATHERINE, Y.; ZAMOUCHE, A.; BULLOT, J.; GAUTHIER, M.
LB. DE PHYS. CORPUSCULAIRE, UNIV. DE NANTES NANTES, FRANCE
THIN SOLID FILMS (SWITZERLAND) VOL.109, NO.2 145-58 11 NOV. 1983 CODEN: THSFAP
ISSN: 0040-6090
USCCC Code: 0040-6090/83/$3.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (39 Refs)
THE STRUCTURE AND THE PROPERTIES OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PRODUCED AT ROOM TEMPERATURE BY DC AND RF GLOW DISCHARGE DECOMPOSITION OF SILANE AND ETHYLENE WERE STUDIED WITH A SYSTEMATIC CONTROL OF THE ION FLUX AT THE SURFACE OF THE GROWING FILM. THE COMPOSITION AND STRUCTURE OF THE FILMS WERE MONITORED BY MEASURING THEIR IR ABSORPTION, THEIR REFRACTIVE INDEX AND THEIR OPTICAL GAP. THE ION FLUXES WERE DETERMINED FROM THE SATURATION CURRENT OF A SMALL GRID PROBE LOCATED IN THE SUBSTRATE HOLDER. IT WAS FOUND THAT DC CATHODIC AND RF FILMS SHOW AN INORGANIC STRUCTURE WITH A DISPERSED CARBON PHASE WHILE DC ANODIC FILMS EXHIBIT MAINLY HYDROGENATED CARBON CLUSTERS. THESE STRUCTURAL CHANGES ARE THOUGHT TO RESULT FROM DIFFERENCES IN THE ENERGIES OF THE BOMBARDING IONS. THE VERSATILITY OF RF AND DC PROXIMITY DISCHARGES IN COMPARISON WITH DC DISCHARGES (ANODIC AND CATHODIC FILMS) IS ALSO EMPHASIZED.
Desc.: SILICON COMPOUNDS; PLASMA DEPOSITION; HYDROGEN; AMORPHOUS SEMICONDUCTORS; ION BEAM EFFECTS; NONCRYSTALLINE STATE STRUCTURE; INFRARED SPECTRA OF INORGANIC SOLIDS; REFRACTIVE INDEX; ENERGY GAP; SEMICONDUCTOR THIN FILMS
Ident.: AMORPHOUS SI/SUB X/C/SUB 1-X/: H FILMS; SEMICONDUCTORS; DC DISCHARGES; PLASMA DEPOSITION; RF DISCHARGES; STRUCTURE; IR ABSORPTION; REFRACTIVE INDEX; OPTICAL GAP
Class Codes: A8115J; A6855; A6180J; A7820D; A7830G; A7865J; B0520F

Y012013 74 
1193227 A8020104
ESCA STUDY OF AMORPHOUS CVD SI/SUB 3/N/SUB 4/-C COMPOSITES
GOTO, T.; ITOH, F.; SUZUKI, K.; HIRAI, T.
RES. INST. FOR IRON, STEEL AND OTHER METALS, TOHOKU UNIV., SENDAI, JAPAN
J. MATER. SCI. LETT. (GB) VOL.2, NO.1 805-7 DEC. 1983 CODEN: JMTSAS
ISSN: 0261-8028
USCCC Code: 0261-8028/83$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
THE AUTHORS HAVE USED ESCA TO EXAMINE THE BONDING CHARACTERISTICS OF AMORPHOUS CVD SI/SUB 3/N/SUB 4/-C. IT IS CONCLUDED THAT THEY ARE SIMILAR TO THOSE OF AMORPHOUS CVD SI/SUB 3/N/SUB 4/.
Desc.: SILICON COMPOUNDS; COMPOSITE MATERIALS; CARBON; AMORPHOUS STATE; NONCRYSTALLINE STATE STRUCTURE; BINDING ENERGY; ELECTRON SPECTROSCOPY; CHEMICAL VAPOUR DEPOSITION; CERAMICS
Ident.: BINDING ENERGY; AMORPHOUS CVD COMPOSITE; ESCA; SI/SUB 3/N/SUB 4/-C COMPOSITES; BONDING CHARACTERISTICS
Class Codes: A6140; A8115H

Y012013 75 
1184328 A84012032, B84005201
MICROELECTRONIC THIN FILM DEPOSITION BY ULTRAVIOLET LASER PHOTOLYSIS
BOYER, P.K.; MOORE, C.A.; SOLANKI, R.; RITCHIE, WK.; ROCHE, G.A.; COLLINS, G.J.
DEPT. OF ELECTRICAL ENGNG., COLORADO STATE UNIV., FORT COLLINS, CO, USA
PROC. SPIE INT. SOC. OPT. ENG. (USA) VOL.385 120-6 1983 CODEN: PSISDG
ISSN: 0277-786X
LASER PROCESSING OF SEMICONDUCTOR DEVICES 18-19 JAN. 1983 LOS ANGELES, CA, USA
Treatment: APPLIC; GENERAL, REVIEW; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (8 Refs)
AN EXCIMER LASER IS USED TO PHOTOCHEMICALLY DEPOSIT THIN FILMS OF SILICON DIOXIDE, SILICON NITRIDE, ALUMINIUM OXIDE, AND ZINC OXIDE AT LOW TEMPERATURES (100-350 DEGREESC). DEPOSITION RATES IN EXCESS OF 3000 AA/MIN AND CONFORMAL COVERAGE OVER VERTICAL WALLED STEPS WERE DEMOSTRATED. THE FILMS EXHIBIT LOW DEFECT DENSITY AND HIGH BREAKDOWN VOLTAGE AND HAVE BEEN CHARACTERIZED USING IR SPECTROPHOTOMETRY, AES, AND C-V ANALYSIS. DEVICE COMPATIBILITY HAS BEEN STUDIED BY USING PHOTODEPOSITED FILMS AS INTERLAYER DIELECTRICS, DIFFUSION MASKS, AND PASSIVATION LAYERS IN PRODUCTION CMOS DEVICES. ADDITIONALLY, THE AUTHORS HAVE DEPOSITED METALLIC FILMS OF AL, MO, W, AND CR OVER LARGE (>5 CM/SUP 2/) AREAS USING UV PHOTODISSOCIATION OF TRIMETHYLALUMINUM AND THE REFRACTORY ETAL HEXACARBONYLS. BOTH SHINY METALLIC FILMS AS WELL AS BLACK PARTICULATE FILMS WERE OBTAINED DEPENDING ON THE DEPOSITION GEOMETRY. THE DEPOSITIONS WERE MADE AT ROOM TEMPERATURE OVER PYREX AND QUARTZ PLATES AS WELL AS SILICON WAFERS. THEY HAVE EXAMINED THE RESISTIVITY, ADHESION, STRESS AND STEP COVERAGE OF THESE FILMS.
Desc.: PROTOLYSIS; SEMICONDUCTOR TECHNOLOGY; PASSIVATION; DIELECTRIC THIN FILMS; DIELECTRIC THIN FILMS; DIELECTRIC THIN FILMS; DIELECTRIC THIN FILMS; FIELD EFFECT INTEGRATED CIRCUITS; METALLISATION; METALLISATION; METALLISATION; METALLISATION; ALUMINIUM; MOLYBDENUM; TUNGSTEN; CHROMIUM; SILICON COMPOUNDS; SILICON COMPOUNDS; ZINC COMPOUND; ALUMINA; LASER BEAM APPLICATIONS
Ident.: MICROELECTRONICS; LSI; SIO/SUB 2/; SI/SUB 3/N/SUB 4/; AL/SUB 2/O SUB 3/; LOW TEMPERATURE DEPOSITION; LASER APPLICATIONS; ZNO; THIN FILM DEPOSITION; ULTRAVIOLET LASER PHOTOLYSIS; EXCIMER LASER; PHOTOCHEMICALLY DEPOSIT THIN FILMS; CONFORMAL COVERAGE; LOW DEFECT DENSITY; HIGH BREAKDOWN VOLTAGE; IR SPECTROPHOTOMETRY; AES; C-V ANALYSIS; PHOTODEPOSITED FILMS; INTERLAYER DIELECTRICS; DIFFUSION MASKS; PASSIVATION LAYERS; PRODUCTION CMOS DEVICES; METALLIC FILMS; AL; MO; W; CR; UV PHOTODISSOCIATION; TRIMETHYLALUMINUM; REFRACTORY METAL HEXACARBONYLS; SHINY METALLIC FILMS; BLACK PARTICULATE FILMS; DEPOSITION GEOMETRY; RESISTIVITY; ADHESION; STRESS ; STEP COVERAGE
Class Codes: A8115H; A7360D; A8160; A8250; B2550E; B2550F; B0520F; B4360

Y012013 76 
1176005 A84007603
RF-SPUTTERED SILICON AND HAFNIUM NITRIDES: PROPERTIES AND ADHESION TO 440C STAINLESS STEEL
GILL, A.; ARON, P.R.
BEN GURION UNIV. OF THE NEGEV, BEER-SHEVA, ISRAEL
THIN SOLID FILMS (SWITZERLAND) VOL.108 NO.2 173-80 14 OCT. 1983 CODEN: THSFAP
ISSN: 0040-6090
USCCC Code: 0040-6090/83/$3.00
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (17 Refs)
SILICON NITRIDE AND HAFNIUM NITRIDE COATINGS WERE DEPOSITED BY REACTIVE RF SPUTTERING ONTO OXIDIZED AND UNOXIDIZED 440C STAINLESS STEEL SUBSTRATES. THE COATINGS AND THE INTERFACE BETWEEN THE COATING AND THE SUBSTRATE WERE INVESTIGATED BY X-RAY DIFFRACTOMETRY, SCANNING ELECTRON MICROSCOPY AND AUGER ELECTRON SPECTROSCOPY. THE KNOOP MICROHARDNESS WAS MEASURED TOGETHER WITH THE FRICTION COEFFICIENT BETWEEN A 440C RIDER AND THE COATINGS. SCRATCH TEST RESULTS DEMONSTRATE THAT THE ADHESION OF HAFNIUM NITRIDE TO BOTH OXIDIZED AND UNOXIDIZED 440C IS SUPERIOR TO THAT OF SILICON NITRIDE. OXIDIZED 440C IS FOUND TO HAVE INCREASED ADHESION, TO BOTH NITRIDES COMPARED WITH THAT OF UNOXIDIZED 40C.
Desc.: SILICON COMPOUNDS; SPUTTERED COATINGS; INTERFACE STRUCTURE; SURFACE STRUCTURE; X-RAY DIFFRACTION EXAMINATION OF MATERIALS; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; AUGER EFFECT; HARDNESS; FRICTION; ADHESION; HAFNIUM COMPOUNDS; SPUTTERED COATINGS; INTERFACE STRUCTURE; SURFACE STRUCTURE; X-RAY DIFFRACTION EXAMINATION OF MATERIALS; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; AUGER EFFECT; HARDNESS; FRICTION; ADHESION
Ident.: SCRATCH TESTS; SI/SUB 3/N/SUB 4/; HFN COATING; ADHESION; 440C STAINLESS STEEL; REACTIVE RF SPUTTERING; X-RAY DIFFRACTOMETRY; SCANNING ELECTRON MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; KNOOP MICROHARDNESS; FRICTION COEFFICIENT
Class Codes: A8140P; A8160B; A6820; A6848; A8140N; A6220P; A6220M

Y012013 77 
1149340 A83115034
PREPARATION OF MNCO/SUB 2/O/SUB 4/ BY A WET METHOD AND ITS METAL ION DISTRIBUTION
YAMAMOTO, N.; HIGASHI, S.; KAWANO, S.; ACHIWA, N.
DEPT. OF CHEM., SCHOOL OF LIBERAL ARTS AND SCI., KYOTO UNIV., KYOTO, JAPAN
J. MATER. SCI. LETT. (GB) VOL.2, NO.9 525-6 SEPT. 1983 CODEN: JMTSAS
ISSN: 0261-8028
USCCC Code: 0261-8028/83$03.00+.12
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (4 Refs)
THE AUTHORS REPORT A NEW PREPARATION METHOD FOR THE CUBIC SPINEL MNCO/SUB 2/O/SUB 4/. THE METHOD INVOLVES SYNTHESIS BY DIRECT PRECIPITATION FROM AN ALKALINE WATER SOLUTION CONTAINING CO/SUP 2+/ AND MN/SUP 2+/ CATIONS AT LOW TEMPERATURE. THE METHOD PRODUCES REMARKABLE DIFFERENCES IN METAL ION DISTRIBUTION BETWEEN A AND B SITES OF THE SPINEL LATTICE.
Desc.: CRYSTAL GROWTH FROM SOLUTION; PRECIPITATION (PHYSICAL CHEMISTRY); CRYSTALLISATION; CERAMICS; CRYSTAL ATOMIC STRUCTURE OF INORGANIC COMPOUNDS; FERRIMAGNETIC PROPERTIES OF SUBSTANCES; NEUTRON DIFFRACTION EXAMINATION OF MATERIALS; MANGANESE COMPOUNDS
Ident.: POWDER X-RAY DIFFRACTION; NEUTRON DIFFRACTION; CURIE TEMPERATURE; MNCO/SUB 2/O/SUB 4/; WET METHOD; PREPARATION METHOD; CUBIC SPINAL; SYNTHESIS; DIRECT PRECIPITATION; ALKALINE WATER SOLUTION; METAL ION DISTRIBUTION
Class Codes: A8110D; A8120L; A6160; A7550G

Y012013 78 
1141302 A83105981
TESTING AND EVALUATION OF SOLIDIFIED HIGH-LEVEL WASTE FORMS
DE BATIST, R.
Issued by: COMM. EUROPEAN COMMUNITIES, LUXEMBOURG;
1983
123 pp.
Report No.: EUR 8424 EN
TReatment: PRACTICAL
Doc. Type: REPORT
Lang.: Eng.
Contract No.: 121-80-53 WASUK/122-80-53 WASD/123?80-55 WASF/124-80-55 WASB/125-80-55 WASN/232-81-53 WASD/268-81-55 WASF (23 Refs)
DESCRIBES THE WORK CARRIED OUT DURING THE PERIOD 1980-81 ON THE CHARACTERISATION AND EVALUATION OF SEVERAL SOLIDIFIED HIGH LEVEL WASTE FORMS SUGGESTED AS EXAMPLES BY MEMBER COUNTRIES OF THE EUROPEAN COMMUNITY. IN ADDITION TO BOROSILICATE GLASSES AND A GLASS CERAMIC INVESTIGATED DURING THE PRECEDING PROGRAMME OF THE EUROPEAN ATOMIC ENERGY COMMUNITY AND WHICH ARE BEING FURTHER STUDIED, TWO NEW BOROSILICATE GLASS COMPOSITIONS HAVE BEEN INTRODUCED. THE CHEMICAL STABILITY OF THESE WASTE FORMS, IN PARTICULAR WITH RESPECT TO GEOLOGICAL DISPOSAL CONDITIONS, IS EXAMINED AS WELL AS EFFECTS OF ALPHA-RADIATION AND OF DEVITRIFICATION. LEACHING STUDIES ARE ALSO DISCUSSED.
Desc.: RADIOACTIVE WASTE; WASTE DISPOSAL; BOROSILICATE GLASSES; CERAMICS; CORROSION; RADIATION EFFECTS
Ident.: LEACHING; CHARACTERISITION; EVALUATION; SOLIDIFIED HIGH LEVEL WASTE FORMS; BOROSILICATE GLASSES; GLASS CERAMIC; CHEMICAL STABILITY GEOLOGICAL DISPOSAL CONDITIONS; ALPHA-RADIATION; DEVITRIFICATION
Class Codes: A2842K; A6180; A8160F; A8160D

Y012013 79 
1136544 A83103064, B83053456
LASER PHOTOLYTIC DEPOSITION OF THIN FILMS
BOYER, P.K.; MOORE, C.A.; SOLANKI, R.; RITCHIE, W.K.; ROCHE, G.A.; COLLINS, G.J.
DEPT. OF ELECTRICAL ENGNG., COLORADO STATE UNIV., FORT COLLINS, CO, USA
OSGOOD, R.M.; BRUECK, S.R.J.; SCHLOSSBERG, H.R. (Editors)
Sponsor: AIR FORCE OFFICE SCI. RES
LASER DIAGNOSTICS AND PHOTOCHEMICAL PROCESSING FOR SEMICONDUCTOR DEVICES. PROCEEDINGS OF A SYMPOSIUM 119-27 1983
NOV. 1982 BOSTON, MA, USA
Publ: NORTH-HOLLAND, NEW YORK, USA
XIII+298 pp. ISBN 0 444 00782 2
Treatment: PRACTICAL; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (8 Refs)
AN EXCIMER LASER IS USED TO PHOTOCHEMICALLY DEPOSIT THIN FILMS OF SILICON DIOXIDE, SILICON NITRIDE, ALUMINIUM OXIDE, AND ZINC OXIDE A LOW TEMPERATURES (100-350 DEGREESC). DEPOSITION RATES IN EXCESS OF 3000 AA/MIN AND CONFORMAL COVERAGE OVER VERTICAL WALLED STEPS WERE DEMONSTRATED. THE FILMS EXHIBIT LOW DEFECT DENSITY AND HIGH BREAKDOWN VOLTAGE AND HAVE BEEN CHARACTERIZED USING IR SPECTROPHOTOMETRY, AES, AND C-V ANALYSIS. DEVICE COMPATIBILITY HAS BEEN STUDIED BY USING PHOTODEPOSITED FILMS AS INTERLAYER DIELECTRICS, DIFFUSION MASKS, AND PASSIVATION LAYERS IN PRODUCTION CMOS DEVICES. ADDITIONALLY, THE AUTHORS HAVE DEPOSITED METALLIC FILMS OF AL, MO, W, AND CR OVER LARGE (>5 CM/SUP 2/) AREAS USING UV PHOTODISSOCIATION OF TRIMETHYL LUMINIUM AND THE REFRACTORY METAL HEXACARBONYLS. BOTH SHINY METALLIC FILMS AS WELL AS BLACK PARTICULATE FILMS WERE OBTAINED DEPENDING ON THE DEPOSITION GEOMETRY. THE BLACK FILMS ARE SHOWN TO GROW IN COLUMNAR GRAINS. THE DEPOSITIONS WERE MADE AT ROOM TEMPERATURE OVER PYREX AND QUARTZ PLATES AS WELL AS SILICON WAFERS. THE AUTHORS HAVE EXAMINED THE RESISTIVITY, ADHESION, STRESS AND STEP COVERAGE OF THESE FILMS. THE FILMS EXHIBITED RESISTIVITIES AT MOST =20 TIMES THAT OF THE BULK MATERIALS AND TENSILE STRESS NO HIGHER THAN 7*10/SUP 9/ DYNES/CM/SUP 2/.
Desc.: INSULATING THIN FILMS; LASER BEAM APPLICATIONS; CHEMICAL VAPOUR DEPOSITION; CHEMICAL VAPOUR DEPOSITION; LASER BEAM APPLICATIONS; METALLIC THIN FILMS; SILICON COMPOUNDS; SILICON COMPOUNDS; ZINC COMPOUNDS; ALUMINA; ALUMINMUM; MOLYBDENUM; TUNGSTEN; CHROMIUM
Ident.: LASER PYROLYTIC DEPOSITION; SIO/SUB 2/; SI/SUB 3/N/SUB 4/; AL/SUB 2/O/SUB 3/; ZNO; DEVICE COMPATIBILITY; THIN FILMS; PHOTOCHEMICALLY DEPOSIT; VERTICAL WALLED STEPS; LOW DEFECT DENSITY; HIGH BREAKDOWN VOLTAGE IR SPECTROPHOTOMETRY; AES; C-V ANALYSIS; PHOTODEPOSITED FILMS; INTERLAYER DIELECTRICS; DIFFUSION MASKS; PASSIVATION LAYERS; PRODUCTION CMOS DEVICES; METALLIC FILMS; AL; MO; W; CR; UV PHOTODISSOCIATION; BLACK PARTICULATE FILMS; COLUMNAR GRAINS; RESISTIVITY; ADHESION; STRESS; STEP COVERAGE; TENSILE STRESS
Class Codes: A8115H; A6855; B0520F; B2550F; B4360

Y012013 80 
1124073 A83095803
XPS STUDY OF GLASSY GRAIN BOUNDARY LAYERS IN DENSE, HIGH-STRENGTH SILICON NITRIDE
BRAUE, W.; DUDEK, H.J.; ZIEGLER, G.
INST. FUR WERKSTOFF-FORSCHUNG, KOLN, GERMANY
J. NON-CRYST. SOLIDS (NETHERLANDS) VOL.56, NO.1-3 185-9 JULY 1983 CODEN: JNCSBJ
ISSN: 0022-0093
PROCEEDINGS OF THE INTERNATIONAL AND VIITH UNIVERSITY CONF. ON GLASS SCIENCE 13-15 JULY 1983 CLAUSTHAL-ZELLERFELD, GERMANY
USCCC Code: 0022-3093/83/0000-0000/$03.00
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (16 Refs)
X-RAY PHOTOELECTRON SPECTROSCOPY (PS) WAS EMPLOYED TO DISCUSS THE CHEMICAL AND STRUCTURAL STATE OF THE GLASSY GRAIN BOUNDARY PHASE IN MGO-FLUXE HPSN. QUANTITATIVE MEASUREMENTS INDICATE THAT FOR FULLY TRANSFORMED MICROSTRUCTURES (BETA-SI/SUB 3/N/SUB 4/=100PERCENT ), THE MAGNESIUM CONTENT OF THE GLASSY PHASE SEEMS TO BE FAIRLY CONSTANT, IRRESPECTIVE OF THE AMOUNT OF MGO ADDED. BY MEANS OF THE SI 2P BINDING ENERGIES AND THE MODIFIED AUGER PARAMETER ALPHA*/SUB S/, THE STRUCTURAL STATE OF THE GLASSY LAYERS WAS PROVED TO HAVE A SILICON OXYNITRIDE CONFIGURATION. MOREOVER, CRYSTALLINE MAGNESIUM-RICH PHASES SUCH AS MGSIO/SUB 3/, MG/SUB 2/SIO/SUB 4/ AND MGSIN/SUB 2/ HAVE BEEN CHARACTERIZED IN TERMS OF A POSSIBLE CONTRIBUTION TO THE INTEGRAL XPS SPECTRUM OF THE HPSN GLASSY LAYER.
Desc.: NONCRYSTALLINE STATE STRUCTURE; X-RAY PHOTOELECTRON SPECTRA AUGER EFFECT; GRAIN BOUNDARIES; BINDING ENERGY; SILICON COMPOUNDS; MAGNESIUM COMPOUNDS; VITREOUS STATE
Ident.: SI/SUB 3/N/SUB 4/; CHEMICAL STATES; MGO-SI SUB 3/N/SUB 4/; OXYNITRIDE GLASSES; XPS STUDY; GLASSY GRAIN BOUNDARY LAYERS; STRUCTURAL STATE; MICROSTRUCTURES; BINDING ENERGIES; MODIFIED AUGER PARAMETER
Class Codes: A6140D; A6170N; A7960; A7920F

Y012013 81 
1124072 A83095802
OXYNITRIDE GLASSES REPAIRED FROM GELS AND MELTS
BRINKER, C.J.; HAALAND, D.M.; LOEHMAN, R.E.
SANDIA NAT. LABS., ALBUQUERQUE, NM, USA
J. NON-CRYST. SOLIDS (NETHERLANDS) VOL.56, NO.1-3 179-84 JULY 1983 CODEN: JNCSBJ
ISSN: 0022-3093
PROCEEDINGS OF THE INTERNATIONAL AND VIITH UNIVERSITY CONF. ON GLASS SCIENCE 13-15 JULY 1983 CLAUSTHAL-ZELLERFELD, GERMANY
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (8 Refs)
THE STRUCTURES OF GLASSES PREPARED BY MELTING MIXTURES OF ALKALI BOROSILICATE GLASS AND SILICON NITRIDE POWDERS AND BY AMMONOLYSIS OF POROUS BOROSILICATE GELS WERE STUDIED USING FOURIER TRANSFORM INFRARED SPECTROSCOPY AND COMBUSTION ANALYSIS. WHEREAS THERE WAS LITTLE EVIDENCE OF NITRIDE BOND FORMATION IN THE MELT PREPARED GLASSES, SI-N AND B-N BONDING WERE OBSERVED IN THE GEL-DERIVED GLASSES. IT IS PROPOSED THAT THESE DIFFERENCES OCCUR BECAUSE NA/SUB 2O AND B/SUB 2/O/SUB 3/ ARE REDUCED BY SI/SUB 3/N/SUB 4/ IN THE MELT TO FORM SIO/SUB 2/+N/SUB 2/+METAL. IN COMPARISON, AMMONOLYSIS OF GELS IS A LOW TEMPERATURE PROCESS (<1000 DEGREESC) WHICH OCCURS BY LEWIS ACID ADSORPTION AND LEWIS BASE ATTACK ON BRIDGING OXYGEN BONDS.
Desc.: GLASS; NONCRYSTALLINE STATE STRUCTURE; BONDS (CHEMICAL); INFRARED SPECTRA OF INORGANIC SOLIDS; BOROSILICATE GLASSES
Ident.: OXYNITRIDE GLASSES; PREPARATION FROM GELS; PREPARATION FROM MELTS; SI/SUB 3/N/SUB 4/; STRUCTURES OF GLASSES; ALKALI BOROSILICATE GLASS FOURIER TRANSFORM INFRARED SPECTROSCOPY; COMBUSTION ANALYSIS; BOND FORMATION
Class Codes: A6140D; A7830

Y012013 82 
1117083 A83092332, B83047876
SCANNING ACOUSTIC MICROSCOPY INSIDE CERAMIC SAMPLES
NONGAILLARD, B.; ROUVAEN, J..; SAISSE, H.
LAB. OAE, VALENCIENNES, FRANCE
ASH, E.A.; HILL, C.R. (Editors)
ACOUSTICAL IMAGING. VOL.12. PROCEEDINGS OF THE TWELFTH INTERNATIONAL SYMPOSIUM ON ACOUSTICAL IMAGING 125-35 1982
19-22 JULY 1982 LONDON, ENGLAND
Publ: PLENUM, NEW YORK, USA
XIII+776 pp. ISBN 0 306 41247 0
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (4 Refs)
FOR A FEW YEARS, NEW MATERIALS HAVE BEEN WORKED OUT TO COMPLY WITH THE CONSTRAINTS OF SEVERE OPERATING CONDITIONS. A GOOD EXAMPLE IS FROM THE CERAMIC MATERIALS. THEIR MECHANICAL STIFFNESS AND STRENGTH ARE HIGH AND THEIR GENERAL PHYSICAL AND CHEMICAL PROPERTIES MAKE THEM WEAR RESISANT AND VERY REFRACTORY. HOWEVER, THESE MATERIALS ARE NOT DUCTILE, SO THAT VERY GOOD QUALITY MATERIALS MUST BE PRODUCED AND A GOOD KNOWLEDGE OF THE HARMFULNESS OF THE DEFECTS IS REQUIRED. THIS HARMFULNESS IS DEDUCED FROM A COMPARISON OF THE ACTUAL DIMENSIONS OF THE DEFECT TO THE CRITICAL LENGTH A/SUB C/ FOR THAT DEFECT, CORRESPONDING TO THE FRACTURE OF THE SAMPLE UNDER A KNOWN STRESS FIELD SIGMA/SUB R/. THE AUTHORS DETERMINE THE MAXIMUM NUMBER OF DEFAULT PARAMETERS (GEOMETRY, NATURE, SITUATION) BY USING NONDESTRUCTIVE TESTING METHODS. THE SMALL TOUGHNESS OF CERAMICS LEADS TO PARTICULAR FEATURES FOR THE NONDESTRUCTIVE DETECTION AND CHARACTERIZATION OF THEIR INTERNAL DEFECTS. THE CERAMIC COMPONENTS ARE OFTEN USED UNDER VERY HIGH STRESS CONDITIONS. THE CRITICAL LENGTH OF A DEFECT IS THEN NEARLY EQUAL TO 0.2 MM, ASSUMING A 5 MPA VM> VALUE FOR THE CRITICAL STRESS INTENSITY FACTOR K/SUB 1C/.
Desc.: CERAMICS; ACOUSTIC MICROSCOPES; CRYSTAL DEFECTS; NONDESTRUCTIVE TESTING
Ident.: SCANNING ACOUSTIC MICROSCOPY; CERAMIC MATERIALS; DEFECTS; CRITICAL LENGTH; STRESS FIELD; NONDESTRUCTIVE TESTING; CRITICAL STRESS INTENSITY FACTOR
Class Codes: A8170; A4385; B0590; B7820

Y012013 83 
1108505 A83086817
CHEMICAL COMPOSITION OF LPCVD SILICON NITRIDE AND SILICON OXYNITRIDE LAYERS
KUIPER, A.E.T.; HABRAKEN, F.H.P.M.; VAN OOSTROM, A. TAMMINGA, Y.
PHILIPS RES. LABS., EINDHOVEN, NETHERLANDS
PHILIPS J. RES. (NETHERLANDS) VOL.38, NO.1-2 1-18 1983 CODEN: PHJRD9
ISSN: 0165-5817
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (7 Refs)
THE CHEMICAL COMPOSITION OF SILICON NITRIDE AND SILICON OXYNITRIDE FILMS, AS GROWN BY LOW-PRESSURE CHEMICAL VAPOUR DEPOSITION, CAN BE ESTABLISHED USING RUTHERFORD BACKSCATTERING AND AUGER ELECTRON SPECTROSCOPY. IT IS DEMONSTRATED THAT A DEVIATING STOICHIOMETRY AT THE SURFACE OR AT THE INTERFACE OF SUCH FILMS CAN READILY BE DETECTED BY THESE TECHNIQUES, THEREWITH PROVIDING BOTH USEFUL INFORMATION ABOUT THE PROCESS OF DEPOSITION AND A BETTER INSIGHT INTO THE BEHAVIOUR OF THE LAYERS WHEN APPLIED IN A DEVICE.
Desc.: SILICON COMPOUNDS; PARTICLE BACKSCATTERING; AUGER EFFECT; SURFACE STRUCTURE; CVD COATINGS; SILICON COMPOUNDS; PARTICLE BACKSCATTERING ; AUGER EFFECT; SURFACE STRUCTURE; CVD COATINGS
Ident.: LOW PRESSURE CHEMICAL VAPOUR DEPOSITED COATINGS; SI/SUB 3/N/SUB 4/; SI/SUB 2/ON/SUB 2/; CHEMICAL COMPOSITION; RUTHERFORD BACKSCATTERING; AUGER ELECTRON SPECTROSCOPY; DEVIATING STOICHIOMETRY
Class Codes: A6855

Y012013 84 
1101784 B83042649
PHOTOCHEMICAL VAPOR DEPOSITION REACTOR
SOLID STATE TECHNOL. (USA) VOL.25, NO.12 29-30 DEC. 1982 CODEN: SSTEAP
ISSN: 0038-111X
Treatment: GENERAL, REVIEW
Doc. Type: JRNL PAP.
Lang.: Eng.
ULTRAVIOLET LIGHT OF SUFFICIENT ENERGY IS USED FOR THE DECOMPOSITION OF REACTANT GASES IN TYLAN'S PHOTOCHEMICAL CVD REACTOR PVD 1000. UV PHOTONS EXCITE THE REACTANT GASES AND ENHANCE THEIR CHEMICAL REACTIVITY. THE PVD 1000 IS A LOW-PRESSURE, LOW TEMPERATURE PHOTOCHEMICAL VAPOR DEPOSITION REACTOR AND CAN DEPOSIT SILICON DIOXIDE AND SILICON NITRIDE FILMS. THE REACTOR UTILIZES MERCURY SENSITIZING OF THE RECTANT GASES. THE REACTIONS CAN TAKE PLACE AT VERY LOW PROCESS TEMPERATURES. A SLIGHT HEATING (?0 DEGREESC TO 200 DEGREESC) OF THE SUBSTRATE ENHANCES THE FILM ADHESION. SINCE THE UV PHOTONS DO NOT REACH THE GAS IONIZATION ENERGY, NO CHARGED PARTICLES ARE GENERATED WHICH CAN LEAD TO POTENTIAL DEVICE DEGRADATION. THE SYSTEM IN EQUIPPED WITH TWIN REACTOR CHAMBERS PERMITTING TOP LOADING AND COMES COMPLETE WITH VACUUM PUMP, GAS FLOW CONTROLLERS, FILTERS, HEATERS AND ALL NECESSARY CONTROLS FOR TEMPERATURE, GAS FLOW AND REACTOR PRESSURE. THE REACTOR IS DESIGNED TO PROVIDE BOTH AUTOMATIC AND MANUAL PROCESS CONTROL. THE REACTOR IS DESIGNED PRIMARILY FOR PILOT LINE AND RAND FABRICATION OF ADVANCED SEMICONDUCTOR DEVICES.
Desc.: CHEMICAL VAPOUR DEPOSITION; SILICON COMPOUNDS; SILICON COMPOUNDS; SEMICONDUCTOR TECHNOLOGY
Ident.: UV ENHANCED CHEMICAL REACTIVITY; SEMICONDUCTOR TECHNOLOGY; SIO/SUB 2/ DEPOSITION; CVD; HG SENSITISING; SI/SUB 3/N/SUB 4/ DEPOSITION; TYLAN; PHOTOCHEMICAL CVD REACTOR; PVD1000; LOW TEMPERATURE PHOTOCHEMICAL VAPOR DEPOSITION; TWIN REACTOR CHAMBERS
Class Codes: B0520F; B2550

Y012013 85
1098274 A83082779
FUNDAMENTALS OF PREPARING SUSPENSIONS OF SILICON AND RELATED CERAMIC POWDERS
BLEIE, A.
MIT, CAMBRIDGE, MA, USA
J. AM. CERAM. SOC. (USA) VOL.66, NO.5 C79-81 MAY 1983 CODEN: JACTAW
ISSN: 0002-7820
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
A DISPERSIBILITY MODEL PREVIOUSLY DEVELOPED FOR SILICON POWDER IS EXTENDED TO THEORETICALLY PREDICT THE BEHAVIOR OF SILICON NITRIDE AND SILICON CARBIDE POWDERS, AND THEIR NONSTOICHIOMETRIC ANALOGS IN A VARIETY OF POTENTIAL DISPERSING MEDIA.
Desc.: SILICON; SILICON COMPOUNDS; SILICON COMPOUNDS; SUSPENSIONS; SUSPENSIONS SUSPENSIONS; POWDERS; POWDERS; POWDERS; CERAMICS
Ident.: SI POWDER; SI/SUB 3/N/SUB 4/ POWDER; SIC POWDERS; VAN DER WAALS POTENTIAL ENERGY OF INTERACTION; SUSPENSIONS; CERAMIC POWDERS; DISPERSIBILITY MODEL; NONSTOICHIOMETRIC ANALOGS; POTENTIAL DISPERSING MEDIA
Class Codes: A8120E; A8270K

Y012013 86
1093906 A83077783
EFFECT OF ACAF/SUB 2/ ADDITION ON THE OXIDATION OF HOT-PRESSED SILICON NITRIDE-BASE MATERIALS
POSTOGVARD, G.I.; OSTAPENKO, T.; ZELENSKAYA, V.A.
KHARKOV PHYSICOTECH. INST., KHARKOV, UKRAINIAN SSR
POROSHK. METALL. (USSR) VOL.21, NO. 0 53-6 OCT. 1982 CODEN: PMANAI
ISSN: 0032-4795
Trans in: SOV. POWDER METALL. AND MET. CERAM. (USA) VOL.21, NO 10 798-800
OCT. 1982 CODEN: SPMCAV
ISSN: 0038-5735
USCCC Code: 0038-5735/83/210-0798$07.50
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
A STUDY WAS MADE OF THE OXIDATION OF A HOT-PRESSED SI/SUB 3/N/SUB 4/-10PERCENT MGO MATERIAL CONTAINING 1-20PERCENT CAF/SUB 2/ AS AN ANTIFRICTION LUBRICANT, AT 1100-1250 DEGREESC. AS STARTING MATERIAL A GRADE 1 SILICON NITRIDE POWDER WAS USED CONTAINING, IN ADDITION TO COMBINED SILICON AND NITROGEN, 1.5PERCENT FREE SILICON AND THE FOLLOWING IMPURITIES: MORE THAN PERCENT CARBON, 0.3PERCENT EACH IRON AND CALCIUM, 0.1PERCENT ALUMINUM, 0.2PERCENT TITANIUM, AND NOT MORE THAN 0.1PERCENT TOTAL CHROMIUM, NICKEL, MAGNESIUM, COPPER, LEAD, TIN, ZINC, AND MANGANESE. HOT-PRESSED SI/SUB 3/N/SUB 4/-10PERCENT MGO MATERIAL POSSESSED GOOD OXIDATION RESISTANCE IN AIR AT TEMPERATURES IN THE RANGE 1100-1200 DEGRESSC. WHEN SUCH A MATERIAL CONTAINS AN ANTIFRICTION LUBRICANT (1-20PERCENT CAF/SUB 2/), RAISING THE LATTER'S CONCENTRATION INCREASES ITS RATE OF OXIDATION BY DECREASING THE VISCOSITY OF THE OXIDE LAYER, WHICH FACILITATES ACCESS OF OXYGEN TO THE SPECIMEN SURFACE. AT CAF/SUB 2/ CONTENTS OF MORE THAN 5PERCENT THE MATERIAL LACKS MECHANICAL STRENGTH OWING TO THE FORMATION OF A THICK OXIDE LAYER AND APPEARANCE OF CRACKS.
Desc.: SILICON COMPOUNDS; MAGNESIUM COMPOUNDS; OXIDATION; HOT PRESSING; REFRACTORIES; CALCIUM COMPOUNDS
Ident.: SI/SUB 3/N/SUB 4/-M?O; HOT PRESSING; CAF/SUB 2/ ADDITION; OXIDATION RESISTANCE; ANTIFRICTION LUBRICANT; VISCOSITY; MECHANICAL STRENGTH
Class Codes: A8160D; A8120L; A8120E

Y012013 87
1093905 A83077782
HIGH-TEMPERATURE ADSORPTION OF ATMOSPHERIC OXYGEN ON SILICON NITRIDE POWDERS
LAVRENKO, V.A.; PUGACH, E.A.; PIKUZA, P.P.
KIEV POLYTECH. INST., ACAD. OF SCI., UKRAINIAN SSR
POROSHK. METALL. (USSR) VOL.21, NO.10 47-52 OCT. 1982 CODEN: PMANAI
ISSN: 003?-4795
Trans in: SOV. POWDER METALL. AND MET. CERAM. (USA) VOL.21, NO.10 793-7 OCT. 1982 CODEN: SPMCAV
ISSN 0038-5735
USCCC Code: 0038-5735/82/2110-0793$07.50
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (15 Refs)
THE HIGH-TEMPERATURE ADSORPTION OF ATMOSPHERIC OXYGEN ON SILICON NITRIDE POWDERS PRODUCED BY VARIOUS METHODS AND CONTAINING DIFFERENT AMOUNTS OF IMPURITIES WAS STUDIED BY THE DERIVATOGRAPHIC METHOD. EXPERIMENTS WERE CARRIED OUT AT 20-1000 DEGREESC IN AIR AT 1.10/SUP 5/ A UNDER NONISOTHERMAL CONDITIONS; THE RATE OF TEMPERATURE VARIATION WAS 20 DEG C/MIN. THE CHARACTERISTICS OF EACH SYSTEM WAS ASSESSED BY THE RESULTS OF A DIFFERENTIAL THERMAL ANALYSIS (DTA CURVE) AND A THERMOGRAVIMETRIC STUDY (TG AND DTG CURVES). THE SENSITIVITY OF THE METHOD IN ALL EXPERIMENTS WAS THE SAME. AIR ADSORPTION WAS FOUND TO HAVE A SPECIFIC INDIVIDUAL CHARACTER FOR EACH POWDER. IT REFLECTED THE CONDITIONS OF PREPARATION OF THE POWDER BY EACH PROCESS, ITS PURIFICATION AND TREATMENT WITH REAGENTS, AND ALSO THE STATE OF ITS SURFACE.
Desc.: SILICON COMPOUNDS; THERMAL ANALYSIS; REFRACTORIES; POWDER TECHNOLOGY; OXIDATION; ADSORPTION
Ident.: O/SUB 2/ ADSORPTION; SI/SUB 3/N/SUB 4/ POWDERS; OXIDATION; HIGH-TEMPERATURE ADSORPTION; DIFFERENTIAL THERMAL ANALYSIS; DTA CURVE; THERMOGRAVIMETRIC STUDY; TG; DTG
Class Codes: A8160D; A6845D

Y012013 88
1093730 A83077603, B83039119
SYNTHESIS OF GADOLINIUM-GALLIUM GARNET
GORSHKOVA, O.V.; LUKIN, E.S.
D.I. MENDELEEV INST. OF CHEM. TECHNOL., MOSCOW, USSR
STEKLO AND KERAM. (USSR) VOL.39, NO.6 23-4 JUNE 1982 CODEN: STKRAQ
ISSN: 0131-9582
Trans in: GLASS AND CERAM. (USA) VOL.39, NO.5-6 299-301 MAY-JUNE 1982 CODEN: GLCEAV
ISSN: 0361-7610
USCCC Code: 0361-7610/82/0506-0299$07.50
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (2 Refs)
THE PURPOSE OF THE AUTHORS' INVESTIGATION WAS TO DETERMINE THE POSSIBILITY OF PRODUCING A HIGHLY HOMOGENEOUS POWDER OF GADOLINIUM-GALLIUM GARNET, ACTIVE TO SINTERING, BY LOW-TEMPERATURE SYNTHESIS FROM HYDROXIDES PREPARED BY THE METHOD OF JOINT PRECIPITATION FROM CONCENTRATED CHLORIDE SALT SOLUTIONS. THE EFFECT OF PRECIPITATION CONDITIONS (DIFFERENT COMBINATIONS OF THE TEMPERATURE OF THE PRECIPITATING AGENT AND SALT SOLUTION OF THE INITIAL COMPONENTS) ON SUCH PROPERTIES OF THE HYDROXIDE POWDERS AS DISPERSION, FILTERABILITY, AND ALSO ON THE MICROSTRUCTURE AND PHASE COMPOSITION OF SYNTHESIZED GADOLINIUM-GALLIUM GARNET POWDERS WAS INVESTIGATED.
Desc.: POWDER TECHNOLOGY; CERAMICS; SINTERING; GADOLINIUM COMPOUNDS ; GALLIUM COMPOUNDS; PRECIPITATION (PHYSICAL CHEMISTRY); CRYSTAL MICROSTRUCTURE; GARNETS
Ident.: GDGA GARNET; SYNTHESIS; HIGHLY HOMOGENEOUS POWDER; ACTIVE TO SINTERING; LOW-TEMPERATURE SYNTHESIS; HYDROXIDES; METHOD OF JOINT PRECIPITATION; CONCENTRATED CHLORIDE SALT SOLUTIONS; EFFECT OF PRECIPITATION CONDITIONS; DISPERSION; FILTERABILITY; MICROSTRUCTURE; PHASE COMPOSITION
Class Codes: A8120L; A8120E; A7550G; B3110E; B0540; B0580

Y012013 89
1083648 A83073218
TRIBOLOGICAL PROPERTIES OF SINTERED POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON CARBIDE
MIYOSHI, K.; BUCKLEY, D.H.; SRINIVASAN, M
NASA-LEWIS RES. CENTER, CLEVELAND, OH, USA
AM. CERAM. SOC. BULL. (USA) VOL.62, NO.4 494-500 APRIL 1983 CODEN: ACSBA7
ISSN: 0002-7812
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (33 Refs)
TRIBOLOGICAL STUDIES AND X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSES WERE CONDUCTED WITH SINTERED POLYCRYSTALLINE AND SINGLE-CRYSTAL SIC FLAT SURFACES IN SLIDING CONTACT WITH AN IRON PIN AT TEMPERATURES TO 1500 DEGREESC IN A VACUUM OF 30 NPA. THE RESULTS INDICATE THAT THERE IS A SIGNIFICANT TEMPERATURE INFLUENCE ON BOTH THE FRICTION PROPERTIES AND THE SURFACE CHEMISTRY OF SIC. THE SURFACE REVEALED A LOW COEFFICIENT OF FRICTION. THIS IS BELIEVED TO BE DUE TO THE PRESENCE OF THE GRAPHITE ON THE SURFACE. AT TEMPERATURES OF 400 DEGREES TO 60 DEGREESC, GRAPHITE AND A COPIOUS AMOUNT OF SIO/SUB 2/ WERE OBSERVED ON THE POLYCRYSTALLINE SIC SURFACE IN ADDITION TO SIC. AT 800 DEGREESC, THE AMOUNT OF THE SIO/SUB 2/ DECREASED RAPIDLY AND THE SIC-TYPE SILICON AND CARBON PEAKS WERE AT A MAXIMUM INTENSITY IN THE XPS SPECTRA. THE COEFFICIENTS OF FRICTION WERE HIGH IN THE TEMPERATURE RANGE OF 400 TO 800 DEGREESC. SIC-TYPE SILICON AND CARBON PEAKS WERE SEEN ON THE SIC IN ADDITION TO VERY SMALL AMOUNT OF GRAPHITE AND SIO/SUB 2/ AT TEMPERATURES OF 450 DEGREESC TO 800 DEGREESC. THE COEFFICIENTS OF FRICTION WERE HIGH OVER THE ENTIRE TEMPERATURE RANGE TO 800 DEGREESC. ABOVE 800 DEGREESC, THE CONCENTRATION OF GRAPHITE INCREASE RAPIDLY ON BOTH POLYCRYSTALLINE AND SINGLE-CRYSTAL SIC SURFACES, WHEREAS CONCENTRATION OF THE SIC-TYPE SILICON AND CARBON PEAKS DECREASES RAPIDLY. THE PRESENCE OF GRAPHITE IS ACCOMPANIED BY A SIGNIFICANT DECREASE IN FRICTION.
Desc.: SILICON COMPOUNDS; SURFACE CHEMISTRY; FRICTION; CERAMICS; X-RAY PHOTOELECTRON SPECTRA
Ident.: SURFACE CHEMISTRY; TRIBOLOGICAL PROPERTIES; X-RAY PHOTOELECTRON SPECTROSCOPY; SINGLE-CRYSTAL SIC; SLIDING CONTACT; FRICTION PROPERTIES; GRAPHITE; POLYCRYSTALLINE SIC; XPS SPECTRA
Class Codes: A8140P; A6220P; A8265

Y012013 90
1083561 A83073130
BENDING STRENGTH OF SILICON NITRIDE AT 1250 DEGREESC UNDER STATIC AND CYCLIC BENDING LOAD
HEIGL, H.; HECKEL, K.
INST. FUR WERKSTOFFKUNDE, HOCHSCHULE DER BUNDESWEHR, MUNCHEN, GERMANY
CFI-CERA. FORUM INT. BER. DTSCH. KERAM. GES. (GERMANY) VOL.60, NO.2-3
69-73 APRIL 1983 CODEN: CCFDD7
ISSN: 0173-9913
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: GERMAN, ENGLISH (4 Refs)
THE BENDING STRENGTH OF REACTION BONDED SILICON NITRIDE AT 1250 DEGREESC IS HIGHER THAN THE BENDING STRENGTH AT ROOM TEMPERATURE. A LONG-TIME THERMAL TREATMENT OF OXIDIZED SPECIMENS HAS NO APPRECIABLE INFLUENCE ON THE STATIC BENDING STRENGTH AT 1250 DEGREESC. NO FATIGUE FAILURE WAS OBSERVED AT ONE-STEP FATIGUE TESTS UP TO 20 MILLION CYCLES OF LOADING. IF AN OXIDIZED PART LOADED MAINLY WITH BENDING STRESSES DOES NOT FAIL AT ROOM TEMPERATURE, IT CAN BE EXPECTED THAT IT WILL ALSO STAND THE LOAD AT 1250 DEGREESC.
Desc.: SILICON COMPOUNDS; BENDING STRENGTH; HEAT TREATMENT; OXIDATION; STRESS CORROSION CRACKING; REFRACTORIES
Ident.: REACTION BONDED SI/SUB 3/N/SUB 4/; OXIDISED SPECIMENS; BENDING STRENGTH; LONG-TIME THERMAL TREATMENT; FATIGUE FAILURE; ONE-STEP FATIGUE TESTS
Class Codes: A810L; A6220F; A8160D

Y012013 91
1080667 A83069789
SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON THE SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT
TOPP, S.V. (Editors)
SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON THE SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT 1982
SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON THE SCIENTIFIC BASIS FOR NUCLEAR WASTE MANAGEMENT 16-19 NOV. 1981 BOSTON, MA, USA
Publ: NORTH-HOLLAND, NEW YORK, USA
XXI+768 pp. ISBN 0 444 00699 0
Doc. Type: CONF. PROCEEDINGS
Lang.: Eng.
THE FOLLOWING TOPICS WERE DEALT WITH: RADIOACTIVE WASTE FORMS; CHEMICAL PROPERTIES; PHYSICAL PROPERTIES; GEOLOGICAL DISPOSAL; GEOCHEMICAL CONSIDERATIONS FOR RADWASTE DISPOSAL; CAKISTER-BACKFILL INTERACTIONS; NEAR FIELD INTERACTIONS; PROCESSING COMPLEXITIES; NON-HLW ASSESSMENTS; RADIATION EFFECT ON WASTE FORMS. 99 PAP.S WERE PRESENTED, OF WHICH 92 ARE PUBLISHED IN FULL IN THE PRESENT PROCEEDINGS. ABSTRACTS OF INDIVIDUAL PAP.S CAN BE FOUND UNDER THE CLASSIFICATION CODES IN THIS OR OTHER ISSUES.
Desc.: RADIOACTIVE WASTE; WASTE DISPOSAL; RADIATION EFFECTS; CERAMICS; GLASS; CORROSION
Ident.: HLW; HIGH LEVEL WASTE; RADIOACTIVE WASTE FORMS; CHEMICAL PROPERTIES; PHYSICAL PROPERTIES; GEOLOGICAL DISPOSAL; GEOCHEMICAL CONSIDERATIONS; RADWASTE DISPOSAL; CANISTER-BACKFILL INTERACTIONS; NEAR FIELD INTERACTIONS; PROCESSING COMPLEXITIES; RADIATION EFFECTS
Class Codes: A0130C; A2842K; A6180; A8160F

Y012013 92
1079381 A83068438, B83033259
LOW TEMPERATURE DEPOSITION OF SILICON NITRIDE BY REACTIVE ION-BEAM SPUTTERING
BOUCHIER, D.; GAUTHERIN, G.; SCHWEBEL, C.; BOSSEBOEUF, A.; AGIUS, B.; RIGO, S.
INST. D'ELECTRONIQUE FONDAMENTALE, UNIV. PARIS XI, ORSAY, FRANCE
J ELECTROCHEM. SOC. (USA) VOL.130, NO.3 638-44 MARCH 1983 CODEN: JESOAN
ISSN: 0013-4651
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (28 Refs)
THE DEPOSITION MECHANISM OF REACTIVE ION BEAM SPUTTERED SILICON NITRIDE WAS STUDIED. USING RBS ANALYSIS, THE COMPOSITION OF SI/SUB X/N/SUB Y/ LAYERS DEPOSITED AT ROOM TEMPERATURE HAS BEEN INVESTIGATED AS A FUNCTION OF DIFFERENT PARAMETERS. IRRESPECTIVE OF THE NITROGEN PARTIAL PRESSURE, RANGING FROM 10/SUP -4/ TO 0.2 PA, THE STOICHIOMETRY OF THE FILM DEPENDS ONLY ON THE SPUTTERING YIELD OF SILICON IN THE RANGE 0.4-20 KEV. SI/SUB 3/N/SUB 4/ LAYERS CAN BE OBTAINED AT LOW VOLTAGE, BUT ONLY WITH A LOW DEPOSITION RATE (TYPICALLY 1 NM/MIN AT THE AUTHORS EXPERIMENTAL CONDITIONS). IN ORDER TO OBTAIN SI/SUB 3/N/SUB 4/ FILMS WITH HIGHER DEPOSITION RATES, THE AUTHOR INCREASED THE NITRIDATION OF DEPOSITED SILICON, EITHER BY INTRODUCING IN THE DEPOSITION CHAMBER OF A HIGHLY REACTIVE MOLECULE SUCH AS NH/SUB 3/, OR BY USING ELECTRONIC BOMBARDMENT, WHICH STIMULATES THE ADSORPTION OF N/SUB 2/ ON THE GROWING FILM.
Desc.: SILICON COMPOUNDS; REACTIVE SPUTTERING; INSULATING THIN FILMS; PARTICLE BACKSCATTERING
Ident.: LOW TEMPERATURE DEPOSITION; RUTHERFORD BACKSCATTERING ANALYSIS; REACTIVE ION-BEAM SPUTTERING; DEPOSITION MECHANISM; COMPOSITION; SI/SUB X/N/SUB Y/ LAYERS; STOICHIOMETRY; SPUTTERING YIELD; SI/SUB 3/N/SUB 4/ LAYERS; NITRIDATION; ELECTRONIC BOMBARDMENT; ADSORPTION
Class Codes: A8115C; A6855; B0520F

Y012013 93
1063818 A83058082
PREPARATION OF VERY FINE OXIDE PARTICES IN TIO/SUB 2/-SNO/SUB 2/ SYSTEM BY HYDROLYSIS OF METAL ALKOXIDES
SUWA, Y.; KATO, Y.; HIRANO, S.; NAKA, S.
SYNTHETIC CRYSTAL RES. LAB., FACULTY OF ENGNG., NAGOYA UNIV., NAGOYA, JAPAN
J. SOC. MATER. SCI. JPN. (JAPAN) VOL.31, NO.349 955-9 OCT. 1982 CODEN: ZARYAQ
ISSN: 0514-5163
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: JAPANESE (8 Refs)
THE VERY FINE OXIDE PARTICLES IN TIO/SUB 2/-SNO/SUB 2/ SYSTEM WERE PREPARED BY THE HYDROLYSIS OF TITANIUM ISOPROPOXIDE AND TIN ISOPROPOXIDE IN PROPANOL SOLUTION. THE FOLLOWING HYDROLYSIS CONDITIONS WERE FOUND TO BE NECESSARY FOR THE CONTROLLED SYNTHESIS OF CRYSTALLINE OXIDE PRECIPITATES: (1) PROCESS OF WATER ADDITION TO PROPANOL SOLUTION OF METAL ISOPROPOXIDES; (2) THE AMOUNT OF WATER ADDED TO THE METAL ISOPROPOXIDE SOLUTION; (3) HYDROLYSIS TIME AND AGING TIME OF THE PRECIPITATE AT BOILING TEMPERATURE (REFLUX TIME). ON HEATING THE PRECIPITATES, THE GRAINS OF THE ANATASE PHASE OF TIO/SUB 2/ PRECIPITATES GREW SIGNIFICANTLY AT ABOUT 630 DEGREESC, AT WHICH THE PHASE TRANSFORMATION FROM ANATASE TO RUTILE PHASE TOOK PLACE. IN THE PRECIPITATES OF RUTILE STRUCTURE, GRAIN GROWTH SEEMED TO BE MORE CONSTRAINED AND THE NECK GROWTH BETWEEN THE GRAINS REMARKABLE WITH AN INCREASE OF THE AMOUNT OF SNO/SUB 2/.
Desc.: PRECIPITATION (PHYSICAL CHEMISTRY); TITANIUM COMPOUNDS; TIN COMPOUNDS; GRAIN SIZE; POWDERS; CERAMICS
Ident.: VERY FINE OXIDE PARTICLES; TIO/SUB 2/-SNO/SUB 2/SYSTEM; HYDROLYSIS; METAL ALKOXIDES; TITANIUM ISOPROPOXIDE; TIN ISOPROPOXIDE; PROPANOL SOLUTION; CONTROLLED SYNTHESIS; CRYSTALLINE OXIDE PRECIPITATES; HYDROLYSIS TIME; AGING TIME; ANATASE PHASE; TIO/SUB 2/ PRECIPITATES; RUTILE STRUCTURE; GRAIN GROWTH; NECK GROWTH
Class Codes: A8120L

Y012013 94
1058071 A83052965, B83030117
COMMENT ON: 'CHEMICAL CONVERSION OF COMPOSITE FILMS ON SILICON BY ELECTRON BEAM IRRADIATION'
HEIMANN, R.B.
INST. FOR MATERIALS RES., MCMASTER UNIV., HAMILTON, ONTARIO, CANADA
J. VAC. SCI. AND TECHNOL. B (USA) VOL.1, NO.1 108-10 JA.-MARCH 1983 CODEN: JVTBD9
ISSN: 0734-211X
USCCC Code: 0734-211X/83/010108-03$01.00
Treatment: NEW DEVELOPMENTS; PRACTICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (15 Refs)
THE PROCESS DESCRIBED HAS POTENTIAL APPLICATION FOR THE FABRICATION OF INTEGRATED CIRCUITS BY BYPASSING PHOTOLITHOGRAPHIC TECHNIQUES. THE FORMATION OF SILICON NITRIDE OR SILICON OXYNITRIDE BY ELECTRON BEAM-ACTIVATED REACTION OF AMMONIA WITH SILICON OXIDE IS ESSENTIALLY TOPOTACTICAL AND ENSURES A SELECTIVE MASKING ON A MICROSCOPICAL TO SUBMICROSCOPICAL SCALE. EXPOSURE TIME CAN BE DRASTICALLY REDUCED BY USING HIGH-ENERGY RADIATION, SUCH AS LASER BEAMS. NONCONVERTED FILMS ARE READILY DISSOLVED AWAY BY BUFFERED HYDROFLUORIC ACID WHEREAS THE SILICON NITRIDE IS NOT AFFECTED BY THIS TREATMENT. ADVANTAGES OF THIS NOVEL PROCESS MAY LIE IN THE LTV (LOW TEMPERATURE VAPOR) DEPOSITION OF SURFACE FILMS THUS PREVENTING INTRODUCING OF LATTICE DEFECTS AND UNDESIRED OUT DIFFUSION AND PRECIPITATION OF DOPANT ATOMS OWING TO THE HIGH TEMPERATURES REQUIRED FOR THE CURRENT FABRICATION PROCESS.
Desc.: SILICON COMPOUNDS; INSULATING THIN FILMS; ELECTRON BEAM EFFECTS; CHEMICAL VAPOUR DIPOSITION; INTEGRATED CIRCUIT TECHNOLOGY; RADIATION CHEMISTRY
Ident.: SI/SUB 3/N/SUB 4/ FILM; INSULATING FILM; SIO/SUB 2/+NH/SUB 3/; SIO/SUB X/N/SUB Y/ FILM; LOW TEMPERATURE; VAPOUR DEPOSITION; COMPOSITE FILMS; FABRICATION; INTEGRATED CIRCUITS; ELECTRON BEAM-ACTIVATED REACTION; SELECTIVE MASKING
Class Codes: A8115H; A6855; A8250; B2570; B2550E; B2520C; B0520F

Y012013 95
1053413 A83053244
TRIBOLOGICAL PROPERTIES AND SURFACE CHEMISTRY OF SILICON CARBIDE AT TEMPERATRES TO 1500 DEGREESC
MIYOSHI, K.; BUCKLEY, D.H.
NASA, LEWIS RES. CENTER, CLEVELAND, OH, USA
ASLE TRANS. (USA) VOL.26, NO.1 53-63 JAN. 1983 CODEN: ASLTA2
ISSN: 0569-8197
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (26 Refs)
X-RAY PHOTOELECTRON AND AUGER ELECTRON SPECTROSCOPY ANALYSIS AND TRIBOLOGICAL STUDIES WERE CONDUCTED WITH A SILICON CARBIDE (001) SURFACE IN SLIDING CONTACT WITH IRON AT VARIOUS TEMPERATURE TO 1500 DEGREESC IN A VACUUM OF 10 NPA. THE RESULTS INDICATE THAT THERE IS A SIGNIFICANT TEMPERATURE INFLUENCE ON BOTH THE FRICTION PROPERTIES AND THE SURFACE CHEMISTRY OF SILICON CARBIDE. GRAPHITE AND CARBIDE-TYPE CARBON ARE SEEN PRIMARILY ON THE SILICON CARBIDE SURFACE IN ADDITION TO SILICON AT TEMPERATURES TO 800 DEGREESC. THE COEFFICIENTS OF FRICTION OF IRON SLIDING AGAINST A SILICON CARBIDE (0001) SURFACE WERE HIGH TEMPERATURES TO 800 DEGREESC. WHEN THE FRICTION EXPERIMENTS WERE CONDUCTED AT TEMPERATURE ABOVE 800 DEGREESC, THE COEFFICIENTS OF FRICTION WERE DRAMATICALLY LOWER. AT 800 DEGREESC, THE SILICON AND CARBIDE-TYPE CARBON AREA T A MAXIMUM INTENSITY IN THE XPS SPECTRA. WITH INCREASING TEMPERATURE ABOVE 800 DEGREESC, THE CONCENTRATIONS OF THE GRAPHITE INCREASE RAPIDLY ON THE SURFACE, WHEREAS THOSE OF THE CARBIDE-TYPE CARBON AND SILICON DECREASE RAPIDLY. THIS PRESENCE OF GRAPHITE IS ACCOMPANIED BY MARKED DECREASE IN FRICTION. THE HIGHER THE SLIDING TEMPERATURE, TO 800 DEGREESC, THE GREATER IS THE AMOUNT OF METAL TRANSFER TO SILICON CARBIDE. MULTIANGULAR- AND SPHERICAL-SHAPED FRACTURE PITS ARE OBSERVED ON THE SILICON CARBIDE SURFACE AS A RESULT OF IRON SLIDING.
Desc.: FRACTION; SILICON COMPOUNDS; SURFACE CHEMISTRY; AUGER EFFECT ; X-RAY PHOTOELECTRON SPECTRA
Ident.: TRIBOLOGICAL PROPERTIES; SIC; UP TO 1500 DEGREES C TEMPERATURE; X-RAY PHOTOELECTRON SPECTROSCOPY; FE; GRAPHITE; CARBIDE TYPE C ; SI; MULTIANGULAR SHAPED FRACTURE PITS; PENNY SHAPED FRACTURE; SURFACE CHEMISTRY; AUGER ELECTRON SPECTROSCOPY; SLIDING CONTACT; TEMPERATURE INFLUENCE; FRICTION PROPERTIES; METAL TRANSFER; SPHERICAL-SHAPED FRACTURE PITS
Class Codes: A8140P; A6220P; A6820; A8265J; A7960G; A7920F

Y012013 96
1053358 A83053189
DYNAMIC FRACTURE TOUGHNESSES OF REACTION-BONDED SILICON NITRIDE
KOBAYASHI, A.S.; EMERY, E.F.; BEEN MING LIAW
DEPT. OF MECH. ENGNG., UNIV. OF WASHINGTON, SEATTLE, WA, USA
J. AM. CERAM. SOC. (USA) VOL.66, NO.2 151-5 FEB. 1983 CODEN: JATAW
ISSN: 0002-7820
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (19 Refs)
DYNAMIC FRACTURE TOUGHNESS SPECIMENS CONSISTING OF 5.1-MM THICK, MODIFIED WEDGE-LOADED, TAPERED DOUBLE-CANTILIVER-BEAM (WL-MTDCB) SPECIMENS, WHICH ARE SIDE-GROOVED ON ONE SIDE, WERE USED TO ESTABLISH THE ROOM-TEMPERATURE DYNAMIC FRACTURE TOUGHNESS, K/SUB ID/, VS CRACK VELOCITY, A>, RELATIONS OF TWO REACTION-BONDED SILICON NITRIDES. THE MEASURE DYNAMIC CRACK EXTENSION HISTORIES WERE THEN USED TO DRIVE A DYNAMIC FINITE-ELEMENT CODE IN ITS GENERATION MODE WHICH COMPUTES THE DYNAMIC STRESS INTENSITY FACTORS FOR A GIVEN CRACK EXTENSION. RESULTS INDICATE THAT THE K/SUB ID/ VS A> RELATIONS OF REACTION-BONDED SILICON NITRIDES DO NOT FOLLOW THE GENERAL TREND IN THOSE RELATIONS OF BRITTLE POLYMER AND STEEL. THE SLOW INITIAL CRACK VELOCITY WHICH WAS REPORTED FOR GLASS WAS OBSERVED AGAIN IN SILICON NITRIDE AND RESULTED IN A NONUNIQUE K/SUB ID/ VS A> RELATION, IN CONTRAST TO THE UNIQUE K/SUB ID/ VS A> MATERIAL PROPERTIES REPORTED FOR BRITTLE POLYMERS AND METALS.
Desc.: SILICON COMPOUNDS; FRACTURE TOUGHNESS; FINITE ELEMENT ANALYSIS; REFRACTORIES
Ident.: SI/SUB 3/N/SUB 4/; REACTION-BONDED CERAMICS; DOUBLE-CANTILEVER-BEAM; DYNAMIC FRACTURE TOUGHNESS; CRACK VELOCITY; DYNAMIC CRACK EXTENSION; DYNAMIC FINITE-ELEMENT CODE; STRESS INTENSITY FACTORS
Class CodEs: A8140N; A6220M

Y012013 97
1021221 A83035026
FEMORAL COMPONENTS (CUP) MADE OF GLASS-CERAMICS
YUAN TSENCHIN; NIU ZHONGYONG; CHOU MENGPEI; CHANG SHUYONG; WANG HUIJUAN; LIN DAZAO; GUO XINGTANG; JIA YOUMIN; WANG JIANGCHENG
RES. INST. OF BUILDING MATERIALS, BEIJING, CHINA;
J. NON-CRYST. SOLIDS (NETHERLANDS) VOL.52, NO.1-3 487-96 DEC. 1982 CODEN: JNCSBJ
ISSN: 0022-3093
PROCEEDINGS OF THE FIRST SYMPOSIUM ON GLASS 25-28 AUG. 1981 BEIJING, PEOPLE'S REPUBLIC OF CHINA
USCCC Code: 0022-3093/82/0000-0000/$02.75
Treatment: APPPIC; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (9 Refs)
THE APPLICATION OF GLASS-CERAMICS AS A KIND OF BIOMEDICAL MATERIAL IN ARTIFICIAL JOINTS IS PRESENTED IN THIS PAP.. THE COMPOSITION, MANUFACTURE AND SOME RELATED PROPERTIES ARE GIVEN. THE RESULTS OF THE TESTS HAVE PROVED THAT GLASS-CERAMIC FEMORAL CUPS HAVE OUTSTANDING CHEMICAL STABILITY, WEAR RESISTANCE, BIOCOMPATIBILITY AND MECHANICAL STRENGTH, AS REQUIRED BY THE LOAD-BEARING PROSTHESIS TO THE SKELETAL SYSTEM. THE REASON WHY THE GLASS-CERAMICS SHOW THESE OUTSTANDING PROPERTIES WHEN USED FOR THE PURPOSES OF ARTIFICIAL JOINTS IS PRELIMINARILY DESCRIBED AND DISCUSSED.
Desc.: GLASS; CERAMICS; PROSTHETICS
Ident.: GLASS-CERAMICS; BIOMEDICAL MATERIAL; ARTIFICIAL JOINTS; FEMORAL CUPS; CHEMICAL STABILITY; WEAR RESISTANCE; BIOCOMPATIBILITY; MECHANICAL STRENGTH; LOAD-BEARING PROSTHESIS
Class Codes: A8770J

Y012013 98
1020867 A83034488
TRIBOLOGICAL PROPERTIES OF SILICON CARBIDE IN THE METAL REMOVAL PROCESS
MIYOHI, K.; BUCKLEY, D.H.
NAT. AERONAUTICS AND SPACE ADMINISTRATION, LEWIS RES. CENTER, CLEVELAND, OH, USA
WEAR (SWITZERLAND) VOL.82, NO.2 197-211 1 NOV. 1982 CODEN: WEARCJ
ISSN: 0043-1648
USCCC Code: 0043-1648/82/0000-0000/$02.75
Doc. Type: JRNL PAP.
Lang.: Eng. (21 Refs)
MATERIAL PROPERTIES ARE REVIEWED AS THEY RELATE TO THE ADHESION, FRICTION AND WEAR OF SINGLE-CRYSTAL SILICON CARBIDE IN CONTACT WITH METALS AND ALLOYS THAT ARE LIKELY TO BE INVOLVED IN A METAL REMOVAL PROCESS SUCH AS GRINDING. THE TRIBOLOGICAL PROPERTIES OF CONCERN IN THE METAL REMOVAL PROCESSES ARE SEPARATED INTO TWO CONTRIBUTIONS: THE FIRST IS THAT IN WHICH METAL REMOVAL ARISES PRIMARILY FROM ADHESION BETWEEN SLIDING SURFACES IN CONTACT AND THE SECOND IS WHERE METAL REMOVAL OCCURS AS A RESULT OF THE SILICON CARBIDE SLIDING AGAINST A METAL, INDENTING INTO IT AND PLOWING A SERIES OF GROOVES OR FURROWS. THE FRACTURE AND DEFORMATION CHARACTERISTICS OF THE SILICON CARBIDE SURFACE ARE ALSO DEALT WITH. THE ADHESION, FRICTION AND METAL TRANSFER TO SILICON CARBIDE ARE RELATED TO THE RELATIVE CHEMICAL ACTIVITY OF THE METALS. THE ATOMIC SIZE AND THE CONTENT OF ALLOYING ELEMENTS PLAY A DOMINANT ROLE IN CONTROLLING THE ADHESION AND FRICTION PROPERTIES OF ALLOYS. THE FRICTION AND ABRASIVE WEAR (METAL REMOVAL) DECREASE LINEARLY AS THE SHEAR STRENGTH OF THE BULK METAL INCREASES. THE ATOMIC SIZE AND THE CONTENT OF ALLOYING ELEMENTS ARE ALSO IMPORTANT PARAMETERS IN CONTROLLING THE FRICTION AND ABRASIVE WEAR OF ALLOYS.
Desc.: SILICON COMPOUNDS; WEAR; ADHESION; FRACTURE; PLASTIC DEFORMATION; REVIEWS; ABRASION
Ident.: DEFORMATION; SIC SINGLE CRYSTAL; METAL REMOVAL PROCESS; FRICTION; WEAR; GRINDING; TRIBOLOGICAL PROPERTIES; FRACTURE; ADHESION; ABRASIVE WEAR
Class Codes: A8140P; A6220P

Y012013 99
1020657 A83034274
PREPARATION OF PHOSPHATE GLASS COMPOSITE AND THEIR PROSTHETIC APPLICATIONS
ZHU PEINAN; CHEN ZONGQIAN; HUANG JIANONG; SUN QINLIAN; FENG MEIZHEN; CHIEN PUFAN; YANG QINGING; CAI TIDONG
EAST CHINA INST. OF CHEM. TECHNOL., PEKING, CHINA;
J. NON-CRYST. SOLIDS (NETHERLANDS) VOL.52, NO.13 503-10 DEC. 1982 CODEN: JNCSBJ
ISSN: 0022-3093
PROCEEDINGS OF THE FIRST SYMPOSIUM ON GLASS 25-28 AUG. 1981 BEIJING, PEOPLE'S REPUBLIC OF CHINA
USCCC Code: 0022-3093/82/0000-0000/$02.75
Treatment: APPLIC; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (10 Refs)
A BATCH OF PHOSPHATE GLASS COMPOSITE WAS PREPARED FROM A FINELY PULVERISED HOMOGENEOUS MIXTURE OF LABORATORY PREPARED CAHPO/SUB 4/ AND PHOSPHATE GLASS POWDER OBTAINED FROM ITS FRIT. THE SPECIMENS, FORMED BY PRESSING, WERE SINTERED IN A HIGH TEMPERATURE FURNACE. PHYSICAL AND CHEMICAL PROPERTIES OF THIS MATERIAL WERE DETERMINED. THE CONTENT OF CAO AND P/SUB 2/O/SUB 5/ IN SUCH MATERIALS SHOULD BE TAKEN IN THE MOLE RATIO OF 0.7 TO 1.9. THE CRYSTALLINE PHASES, CA/SUB 2/P/SUB 2/O/SUB 7/, WERE INVESTIGATED BY DTA, IR ABSORPTION SPECTRA, X-RAY DIFFRACTION ANALYSIS, TEM AND SEM RESPECTIVELY. IN BIOMEDICAL EXAMINATIONS, IT WAS SHOWN THAT THE CA/SUB 2/P/SUB 2/O/SUB 7/ BASED GLASS COMPOSITE MATERIAL WAS COMPATIBLE WITH ANIMAL BODIES. INVESTIGATION ON MICROSTRUCTURE INDICATED THAT THE NEWLY CREATED BONE INTERLOCKED WELL WITH THE GLASS COMPOSITE BUT THE RATE OF METABOLISM WHICH OCCURRED IN OSTEOGENESIS WAS NOT VERY RAPID. THE FACTORS INFLUENCING THE METABOLISM WITH RESPECT TO THE APPLICATION OF SUCH MATERIALS ARE DISCUSSED.
Desc.: CALCIUM COMPOUNDS; PHOSPHATE GLASSES; CERAMICS; HOT PRESSING ; SINTERING; THERMAL ANALYSIS; INFRARED SPECTRA OF INORGANIC SOLIDS; X-RAY DIFFRACTION EXAMINATION OF MATERIALS; TRANSMISSION ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; PROSTHETICS
Ident.: CERAMIC; CAO-AL/SUB 2/O/SUB 3/-P/SUB 2/O/SUB 5/ GLASS; SINTERING; PHOSPHATE GLASS COMPOSITE; PROSTHETIC APPLICATIONS; CAHPO/SUB 4/ ; PRESSING; CA/SUB 2/P/SUB 2/O/SUB 7/; DTA; IR ABSORPTION SPECTRA; X-RAY DIFFRACTION ANALYSIS; TEM; SEM; BIOMEDICAL EXAMINATIONS; MICROSTRUCTURE; RATE OF METABOLISM; OSTEOGENESIS
Class Codes: A8120Q; A140D; A8120E; A8770J

Y012013 100
1020087 A83033543
SURFACE STRUCTURE OF SILICON CARBIDE IRRADIATED WITH HELIUM IONS WITH MONOENERGY AND CONTINUOUS ENERGY DISTRIBUTIONS
MIYAGAWA, S.; ATO, Y.; MIYAGAWA, Y.
GOVERNMENT INDUSTRIAL RES. INST., NAGOYA, JAPAN
J. APPL. PHYS. (USA) VOL.53, NO.12 8697-705 DEC. 1982 CODEN: JAPIAU
ISSN: 0021-8979
USCCC Code: 0021-8979/82/128697-09$02.40
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (23 Refs)
SILICON CARBIDE WAS IRRADIATED AT ROOM TEMPERATURE AND 600 DEGREESC WITH HELIUM IONS WITH MONOENERGY (3-100 KEV) AND CONTINUOUS ENERGY DISTRIBUTION RANGING FROM 0.5 KEV TO 20 KEV UP TO A TOTAL DOSE OF 1*10/SUP 19/ IONS/CM/SUP 2/ USING AN ION ACCELERATOR CONTROLLED BY A MICROCOMPUTER. FOR ROOM TEMPERATURE IRRADIATION, POROUS STRUCTURES APPEAR ON THE SURFACE OF SAMPLES IRRADIATED TO DOSE OF =5*10/SUP 18/ IONS/CM/SUP 2/, AND THE DAMAGED LAYER IS EASILY REMOVED FROM UNDERLYING UNDAMAGED LAYER BY ULTRASONIC VIBRATIONS. ON THE OTHER HAND, FOR TARGET TEMPERATURE OF 600 DEGREESC, SUCH POROUS SURFACE STRUCTURES ARE NOT OBSERVED, WHICH IS DUE TO THERMAL ANNEALING. IT HAS BEEN SHOWN THAT THE SURFACE DEFORMATION DEPENDS STRONGLY NOT ONLY ON THE IMPLANTATION PROFILE, BUT ALSO ON IRRADIATION MODES OF HELIUM IONS. FLAKING IS COMPLETELY AVOIDED BY PREBOMBARDMENT OF HELIUM IONS WITH CONTINUOUS ENERGY DISTRIBUTION, WHICH DELIBERATELY PRODUCES A PATHWAY FOR GAS RELEASE. IN ORDER TO SIMULATE WALL EROSION DUE TO HELIUM BOMBARDMENT, SILICON CARBIDE WAS ALSO IRRADIATED WITH A MAXWELLIAN DISTRIBUTION. NO BLISTERING OR FLAKING IS OBSERVED FOR AN AVERAGE ENERGY OF 3 KEV.
Desc.: SILICON COMPOUNDS SURFACE STRUCTURE; ION BEAM EFFECTS; FUSION REACTOR MATERIALS
Ident.: SIC; SURFACE STRUCTURE; FUSION REACTOR WALL; HE/SUP +/ ION IRRADIATED; POROUS STRUCTURES; DAMAGED LAYER; ULTRASONIC VIBRATIONS; WALL EROSION; BLISTERING; FLAKING
Class Codes: A6820; A6180J; A2852F

Y012013 101
1003228 A83022867
LAWS GOVERNING THE CHANGE IN SOLE PROPERTIES OF NATURAL SUPERSTRUCTURES BASED ON SILICON CARBIDE
SOROKIN, N.D.; TAIROV, YU.M.; TSVETKOV, V.F.; CHERNOV, M.A.
V.I. UL'YANOV ELECTRICAL ENGNG. INST., LENINGRAD, USSR
DOKL. AKAD. NAUK SSSR VOL.262, NO.4-6 380-3 FEB. 1982 CODEN: DANKAS
ISSN: 0002-3264
Trans in: SOV. PHYS.-DOKL. (USA) VOL.27, NO.2 170-1 FEB. 1982 CODEN: SPHDA9
ISSN: 0038-5689
USCCC Code: 0038-5689/82/020170-02$01.40
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
A COMPREHENSIVE INVESTIGATION IS PRESENTED OF THE CRYSTAL-CHEMICAL PROPERTIES OF SILICON CARBIDE POLYTYPES GROWN BY SUBLIMATION AT 2600 DEGREESC. USING THE SAME SPECIMEN, THE AUTHORS DETERMINED THE EFFECTIVE CHARGE OF THE SILICON ATOMS, THE COMPOSITION, THE LATTICE CONSTANTS, AND THE PRACTICAL DENSITY. AN X-RAY SPECTRAL DETERMINATION OF THE EFFECTIVE CHARGE OF SILICON ATOMS WAS PERFORMED.
Desc.: SILICON COMPOUNDS; CRYSTAL CHEMISTRY; LATTICE CONSTANTS; DENSITY OF SOLIDS; X-RAY ABSORPTION SPECTRA
Ident.: SIC POLYTYPES; SUBLIMATION GROWN CRYSTALS; NATURAL SUPERSTRUCTURES; CRYSTAL-CHEMICAL PROPERTIES; EFFECTIVE CHARGE; COMPOSITION ; LATTICE CONSTANTS; DENSITY; X-RAY SPECTRAL DETERMINATION
Class Codes: A6160; A6480E; A7870D

Y012013 102
1000111 A83019268, B83006337
CHARACTERIZATION OF SI-N FILMS PREPARED BY REACTIVE ION BEAM SPUTTERING
AGGARWAL, M.D.; ASHOK, S.; FONASH, S.J.
PENNSYLVANIA STATE UNIV., UNIVERSITY PARK, PA, USA
J. ELECTRON. MATER. (USA) VOL.11, NO.3 491-504 MAY 1982 CODEN: JECM5
ISSN: 0361-5235
USCCC Code: 0361-5235/82/1103-0491$3.00
Treatment: NEW DEVELOPMENTS; PRACTICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (19 Refs)
APPLICATION OF SILICON-NITRIDE (SI-N) AS A PASSIVANT IN COMPOUND SEMICONDUCTOR TECHNOLOGY REQUIRES A LOW-TEMPERATURE DEPOSITION PROCESS TO PREVENT DISSOCIATION OF THE VOLATILE CONSTITUENTS OF THE SEMICONDUCTOR. WITH THIS IN MIND, AN EXPLORATORY STUDY OF SI-N FILMS PREPARED AT ROOM TEMPERATURE USING LOW-ENERGY, REACTIVE ION-BEAM SPUTTERING HAS BEEN CARRIED OUT. THE ELECTRICAL AND OPTICAL CHARACTERISTICS OF THE FILMS HAVE BEEN STUDIED, AND AN ANNEALING STEP IS FOUND NECESSARY TO REDUCE THE CONDUCTIVITY OF THE NITRIDE AND IMPROVE THE INTERFACIAL PROPERTIES.
Desc.: SILICON COMPOUNDS; PASSIVATION; REACTIVELY SPUTTERED COATINGS; INSULATING THIN FILMS; SEMICONDUCTOR TECHNOLOGY; ANNEALING
Ident.: SI/SUB 3/N/SUB 4/ FILM; INSULATING FILM; REACTIVE ION BEAM SPUTTERING; PASSIVANT; SEMICONDUCTOR TECHNOLOGY; LOW-TEMPERATURE DEPOSITION ; LOW-ENERGY; ANNEALING
Class Codes: A8115C; A6855; B0520F; B2550E

Y012013 103
988462 A83014510
PREPARATION OF METALLIC ORGANOTIN FILMS BY GLOW DISCHARGE POLYMERIZATION AND THEIR PROPERTIES
SADHIR, R.K.; JAMES, W.J.; AUERBACH, R.A.
DEPT. OF CHEM., UNIV. OF MISSOURI-ROLLA, ROLLA, MO, USA
THIN SOLID FILMS (SWITZERLAND) VOL.97, NO.1 17-29 5 NOV. 1982 CODEN: THSFAP
ISSN: 0?40-6090
USCCC Code: 0040-6090/82/0000-0000/$02.75
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (20 Refs)
THIN REFLECTIVE TIN FILMS ARE FORMED BY INTRODUCING TETRA ETHYLTIN AND O/SUB 2/ GAS INTO A GLOW DISCHARGE. THE RESULTING FILMS SHOW A SHEET CONDUCTIVITY IN THE RANGE OF ABOUT 10/SUP 2/-10/SUP 4/ OMEGA/SUP -1/ CM/SUP -1/. THE FILMS ARE STABLE AT AMBIENT CONDITIONS FOR MORE THAN 1 YEAR. HEATING THE FILMS UP TO ABOUT 63 DEGREESC DOES NOT CHANGE THE CONDUCTIVITY APPRECIABLY, BUT PROLONGED HEATING AT HIGHER TEMPERATURES INCREASES THE CONDUCTIVITY IRREVERSIBLY. ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS RESULTS SHOW A TRACE AMOUNT OF CARBON ON THE SURFACE OF THE FILM, BUT THE BULK OF THE FILM IS ESSENTIALLY CARBON FREE. ELECTRON DIFFRACTION AND X-RAY PHOTOGRAPHS OF THE FILMS ARE INDEXED AS BETA-SN. THE FILMS ADHERE STRONGLY TO METALS, CERAMICS, COMPOSITES AND PLASTICS AND ACT AS GOOD WATER VAPOR BARRIERS. THE EFFECT OF THE FLOW RATE OF O/SUB 2/ ON THE FILM CHARACTERISTICS IS DISCUSSED.
Desc.: TIN COMPOUNDS; METALLIC THIN FILMS; ORGANOMETALLIC COMPOUNDS ; POLYMERISATION; PLASMA DEPOSITION; ELECTRONIC CONDUCTION IN METALLIC THIN FILMS; ELECTRON DIFFRACTION EXAMINATION OF MATERIALS; X-RAY DIFFRACTION EXAMINATION OF MATERIALS
Ident.: REFLECTIVE SN FILMS; ESCA; C TRACES; ELECTRON DIFFRACTION; ADHESION; METALLIC ORGANOTIN FILMS; GLOW DISCHARGE POLYMERIZATION; TETRAMETHYLTIN; O/SUB 2/; SHEET CONDUCTIVITY; HEATING; X-RAY PHOTOGRAPHS; BETA-SN; WATER VAPOR BARRIERS; FLOW RATE
Class Codes: A8115J; A6855; A8235; A7360D

Y012013 104
987365 A83013214
DEFECTS IN SILICON
NEWMAN, R.C.
J.J. THOMAS PHYS. LAB., UNIV. OF READING, READING, ENGLAND
REP. PROG. PHYS. (GB) VOL.45, NO.10 1163-210 OCT. 1982 CODEN: RPPHAG
ISSN: 0034-4885
USCCC Code: 0034-4885/82/101163+48$08.00
Treatment: BIBLIOGRAPHY; GENERAL, REVIEW
Doc. Type: JRNL PAP.
Lang.: Eng. (165 Refs)
THE METHOD OF OBTAINING PURE POLYCRYSTALLINE SILICON IS DESCRIBED, FOLLOWED BY SHORT ACCOUNTS OF HOW THIS MATERIAL IS CONVERTED INTO SINGLE-CRYSTAL FORM EITHER BY THE CZOCHRALSKI (CZ) PULLING METHOD OR THE FLOAT-ZONE (FZ) METHOD. IT IS SHOWN THAT THE SILICON CONTAINS VARIOUS IMPURITIES INCLUDING OXYGEN, CARBON, BORON AND POSSIBLY HYDROGEN. THE DEFECTS AND IMPURITIES OFTEN SHOW A NONHOMOGENEOUS DISTRIBUTION IN THE FORM OF HELICAL SWIRLS. HEAT TREATMENT OF SILICON-CONTAINING OXYGEN LEADS TO THE CLUSTERING OF THIS IMPURITY. AT 450 DEGREESC THERE IS FORMATION OF SMALL COMPLEXES THAT ACT AS SHALLOW DONORS. INVESTIGATIONS USING IR AND ESR SPECTROSCOPY HAVE SO FAR FAILED TO DETERMINE THE ATOMIC CONFIGURATION OF THE DEFECTS. HEATING AT HIGHER TEMPERATURES CAUSES WIDE-SCALE PRECIPITATION OF OXYGEN. THERE ARE INTERACTIONS WITH CARBON AND THERE CAN BE FORMATION OF SILICON CARBIDE PRECIPITATES. CONTAMINATION FROM CU, AU, FE, ETC., CAN OCCUR DURING THESE TREATMENTS AND METHODS FOR GETTERING THESE METALS ARE DISCUSSED, INVOLVING DISLOCATIONS AND SILICA PRECIPITATES. LOW-TEMPERATURE IRRADIATIONS PRODUCE VACANCIES AND SELF-INTERSITIALS WHICH COMBINE WITH IMPURITIES TO FORM COMPLEXES ON HEATING FROM 4K TO 300K. EVIDENCE IS PRESENTED TO ILLUSTRATE THE POSSIBLE CHARGE STATES OF SELF-INTERSTITIALS. DAMAGE PRODUCED BY FAST NEUTRONS IS DISCUSSED NEXT, FOLLOWED BY A BRIEF ACCOUNT OF NEUTRON TRANSMUTATION DOPING WHEREBY NEUTRALLY OCCURRING /SUP 30/SI IS CONVERTED TO /SUP 31/P BY THE CAPTURE OF THERMAL NEUTRONS. SOME ASPECTS OF HIGH-TEMPERATURE DIFFUSION ARE DISCUSSED AND ATTEMPTS ARE MADE TO CORRELATE THE DATA WITH THAT DERIVED FROM THE IRRADIATION STUDIES.
Desc.: ELEMENTAL SEMICONDUCTORS; SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; REVIEWS
Ident.: CZOCHRASLKI PULLING METHOD; FLOATING ZONE METHOD; IMPURITY DISTRIBUTION; DEFECTS DISTRIBUTION; C; B; H; IR SPECTROSCOPY; SEMICONDUCTORS; O PRECIPITATION; NEUTRON DAMAGE; THERMAL NEUTRON CAPTURE; HEAT TREATMENT; ESR SPECTROSCOPY; VACANCIES; SELF-INTERSITIALS; NEUTRON TRANSMUTATION DOPING; HIGH-TEMPERATURE DIFFUSION
Class Codes: A6170; A0130R

Y012013 105
983983 A83009207
MECHANOCHEMICAL POLISHING OF SILICON NITRIDE
VORA, H.; ORENT, T.W.; STOKES, R.J.
HONEYWELL CORPORATE TECHNOL. CENTER, BLOOMINGTON, MN, USA
J. AM. CERAM. SOC. (USA) VOL.65, NO.9 C140-1 SEPT. 1982 CODEN: JACTAW
ISSN: 0002-7820
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (4 Refs)
TWO OXIDES OF IRON, FE/SUB ?/O/SUB 3/ AND FE/SUB 3/O/SUB 4/ WERE IDENTIFIED AS SUITABLE SOFT ABRASIVES FOR MECHANOCHEMICAL POLISHING OF SI/SUB 3/N/SUB 4/. REMOVAL RATES UP TO 1.6 MUM/H WERE OBSERVED WHEN HOT-PRESSED SI/SUB 3/N/SUB 4/ SAMPLES WERE MECHANOCHEMICALLY POLISHED USING THESE ABRASIVES ON A LINEN PLASTIC LAP. THE POLISHED SURFACES WERE FLAT AND SCRATCH-FREE, WITH A PEAK-TO-VALLEY ROUGHNESS OF <20 NM. AUGER ELECTRON SPECTROSCOPY OF THESE SURFACES REVEALED A THIN LAYER (<10 NM) OF A SILICON OXYNITRIDE THAT CONTAINED CARBON AND =0.5 AT.PERCENT IRON.
Desc.: SILICON COMPOUNDS; POLISHING; CERAMICS; AUGER EFFECT
Ident.: SCRATCH-FREE SURFACES; REMOVAL RATES; FE/SUB 2/O/SUB 3/; FE/SUB 3/O/SUB 4/; SOFT ABRASIVES; MECHANOCHEMICAL POLISHING; SI/SUB 3/N/SUB 4/; PEAK-TO-VALLEY ROUGHNESS; AUGER ELECTRON SPECTROSCOPY
Class Codes: A8160D

Y012013 106
981338 A83006319
SURFACE STUDIES ON A LEACHED SPHENE GLASS
BANCROFT, G.M.; METSON, J.B.; KANETKAR, S.M.; BROWN, J.D.
DEPT. OF ENGNG., UNIV. OF WESTERN ONTARIO, LONDON, ENGLAND
NATURE (GB) VOL.299, NO.5885 708-10 21 OCT. 1982 CODEN: NATUAS
ISSN: 0028-0836
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
TITANATES AND TITANATE- OR TITANOSILICATE-BASED CERAMICS ARE BEING CONSIDERED AS POSSIBLE NUCLEAR WASTE HOSTS IN SEVERAL NATIONAL WASTE MANAGEMENT PROGRAMMES, LARGELY BECAUSE OF THEIR EXCELLENT RESISTANCE TO LEACHING. THE LEACH RESISTANCE OF TITANATES HAS BEEN ATTRIBUTED TO THE FORMATION OF LARGELY INSOLUBLE, TITANIUM DIOXIDE RICH LAYERS, FORMED AT THE SURFACE BY SELECTIVE LEACHING OF UNIVALENT AND DIVALENT CATIONS. THE AUTHORS HAVE EXAMINED THE LEACHING OF THE TITANOSILICATE SPHENE (CATISIO/SUB 5/) IN THE FORM OF NATURAL SAMPLES, SINTERED CERAMICS AND GLASSES OF STOICHIOMETRIC SPHENE COMPOSITION. ESCA, XPS AND SIMS STUDIES OF LEACHED CATISIO/SUB 5/ GLASSES ARE REPORTED DEMONSTRATING THE NATURE LEACHED SURFACE LAYERS ON A TITANOSILICATE. THESE RESULTS ALSO ILLUSTRATE THE PARALLELS BETWEEN THE LEACHING OF SPHENE GLASSES IN DEIONIZED WATER AND THE LEACHING MECHANISM PROPOSED FOR TITANATES.
Desc.: CALCIUM COMPOUNDS; TITANIUM COMPOUNDS; GLASS; CERAMICS; RADIOACTIVE WASTE; WASTE DISPOSAL
Ident.: LEACHED; LEACH RESISTANCE; CATISIO/SUB 5/; RADIOACTIVE WASTE ; DISPOSAL; STORAGE; SPHENE GLASS; NUCLEAR WASTE; TITANOSILICATE
Class Codes: A2842K

Y012013 107 
960279 B82059193
GROWTH KINETICS OF SILICON THERMAL NITRIDATION
CHING-YUAN WU; CHWAN-WE KING; MING-KWANG LEE; CHIN-TANG CHEN
INST. OF ELECTRONICS, NAT. CHIAO-TUNG UNIV., HSIN-CHU, TAIWAN
J. ELECTROCHEM. SOC. (USA) VOL.129, NO.7 1559-63 JULY 1982 CODEN: JESOAN
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (8 Refs)
AN ANALYTIC MODEL FOR THE GROWTH KINETICS OF SILICON THERMAL NITRIDATION HAS BEEN DEVELOPED, IN WHICH THE NITROGEN RADICALS DIFFUSED ACROSS THE AS-GROWN THERMAL SILICON NITRIDE LAYER HAVE BEEN CHARACTERIZED BY A CHARACTERISTIC DIFFUSION LENGTH. IT HAS BEEN SHOWN THAT THE DIRECT THERMAL NITRIDATION OF SILICON IN AMMONIA GAS OR NITROGEN GAS IS SIMILAR TO THE SILICON OXIDATION IN OXYGEN OR STEAM WHEN THE CHARACTERISTIC DIFFUSION LENGTH OF THE NITROGEN RADICALS IS MUCH LARGER THAN THE AS-GROWN SILICON NITRIDE LAYER. BASED ON COMPARISONS BETWEEN THE EXPERIMENTAL DATA AND THE DEVELOPED MODEL, THE CHARACTERISTIC DIFFUSION LENGTH HAS BEEN SHOWN TO BE VERY SHORT AND HAS BEEN ESTIMATED TO BE SMALLER THAN 10AA FOR NITRIDATION TEMPERATURE BELOW 1200 DEGREESC, AND ITS ACTIVATION ENERGY HAS BEEN ESTIMATED TO BE OF 0.181 EV. MOREOVER, THE LINEAR GROWTH RATE CONSTANT AND THE PARABOLIC GROWTH RATE CONSTANT OF THE AS-GROWN THERMAL NITRIDE FILMS HAVE BEEN ESTIMATED TO BE OF 1.286 AND 1.546 EV, RESPECTIVELY, WHICH ARE SMALLER THAN THOSE OF THE SILICON OXIDATION IN DRY OXYGEN OR STEAM AMBIENT.
Desc.: SILICON; ELEMENTAL SEMICONDUCTORS; SEMICONDUCTOR TECHNOLOGY SURFACE CHEMISTRY; SILICON COMPOUNDS; INSULATING THIN FILMS
Ident.: NH/SUB 3/; N/SUB 2/; SI; SEMICONDUCTOR; SI-SI/SUB 3/N/SUB 4/ ; THERMAL NITRIDATION; ANALYTIC MODEL; GROWTH KINETICS; DIFFUSION LENGTH; LINEAR GROWTH RATE CONSTANT; PARABOLIC GROWTH RATE CONSTANT
Class Codes: B2550E; B2520C

Y012013 108 
960201 A82104498, B82059105
CONDUCTANCE AND NOISE OF MNOS STRUCTURES IN THE REGION OF PUNCH THROUGH CURRENT
SINITSA, S.P.
INST. OF SEMICONDUCTORS, ACAD. OF SCI., USSR
MIKROELEKTRONIKA (USSR) VOL10, NO.6 488-93 NOV.-DEC. 1981
Trans in: SOV. MICROELECTRON. (USA) VOL.10, NO.6 233-7 NOV.-DEC. 1981 CODEN: SOMIDB
Treatment: THEORETICAL; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
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
Desc.: METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; CAPACITORS; ELECTRON DEVICE NOISE; TUNNELLING; SEMICONDUCTOR DEVICE MODELS
Ident.: THIN OXIDE LAYER; TUNNELLING OXIDE LAYER; MNOS STRUCTURES; FREQUENCY SPECTRUM; COMPLEX SMALL-SIGNAL CONDUCTANCE; NOISE; SURFACE ENHANCEMENT CONDITIONS; PUNCHTHROUGH CURRENT REGIME; MNOS CAPACITORS; SIO/SUB 2/; SI/SUB 3/N/SUB 4/
Class Codes: A7340Q; B2530F; B2130; B7310Z; B2560B

Y012013 109 
960195 A82110487, B82059088
IMPROVEMENTS IN GAAS/PLASMA-DEPOSITED SILICON NITRIDE INTERFACE QUALITY BY PREDEPOSITION GAAS SURFACE TREATMENT AND POSTDEPOSITION ANNEALING
CLARK, M.D.; ANDERSON, C.L.
HUGHES RES. LABS., MALIBU, CA, USA
Sponsor: APS; AMERICAN VACUUM SOC.; ARMY RES. OFFICE
J. VAC. SCI. AND TECHNOL. (USA) VOL.21, NO.2 453-6 JULY-AUG. 1982 CODEN: JVSTAL
PROCEEDINGS OF THE NINTH ANNUAL CONF. ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES 27-29 JAN. 1982 PACIFIC GROVE, CA, USA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (3 Refs)
SUBSTANTIAL IMPROVEMENTS IN THE ELECTRICAL PROPERTIES OF INTERFACES BETWEEN N-TYPE GAAS AND SI/SUB 3/N/SUB 4/ FORMED BY PLASMA-ENHANCED CVD HAVE BEEN OBTAINED BY IN SITU SUBSTRATE SURFACE TREATMENT WITH A HYDROGEN PLASMA AND POSTDEPOSITION ANNEALING. FOR SAMPLES WITH SURFACE TREATMENT AND DEPOSITION PERFORMED AT 300 DEGREESC, ANNEALING AT 600 DEGREES FOR 30 MIN IN N/SUB 2/ PRODUCED A DRAMATIC REDUCTION OF CAPACITANCE FREQUENCY DISPERSION. CAPACITANCE AND CONDUCTANCE DATA INDICATE A MAJOR REDUCTION OF SURFACE STATE DENSITY. LOW-FREQUENCY C-V ON AN ILLUMINATED SAMPLE SHOW EVIDENCE OF SURFACE INVERSION. AES COMPOSITION PROFILES ARE PRESENTED AS EVIDENCE THAT THE HYDROGEN PLASMA TREATMENT REDUCES NATIVE OXIDE ON THE GAAS.
Desc.: GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SILICON COMPOUNDS; PLASMA DEPOSITED COATINGS; SEMICONDUCTOR-INSULATOR BOUNDARIES; SURFACE TREATMENT; ANNEALING; INTERFACE ELECTRON STATES; AUGER EFFECT; CAPACITANCE CVD COATINGS
Ident.: SEMICONDUCTOR; GAAS-SI/SUB 3/N/SUB 4/ INTERFACE; H/SUB 2/ PLASMA; INTERFACE QUALITY; PREDEPOSITION GAAS SURFACE TREATMENT; POSTDEPOSITION ANNEALING; ELECTRICAL PROPERTIES; PLASMA-ENHANCED CVD; CAPACITANCE FREQUENCY DISPERSION; CONDUCTANCE; SURFACE STATE DENSITY; SURFACE INVERSION; AES COMPOSITION PROFILES
Class Codes: A7340Q; A8160; A8140G; A6855; A7280E; B2530F; B2520D

Y012013 110 
955004 A82111240
EFFECT OF LITHIUM ON THE MECHANICAL PROPERTIES AND MICROSTRUCTURE OF SIC WHISKER REINFORCED ALUMINUM ALLOYS
WEBSTER, D.
LOCKHEED MISSILES AND SPACE CO., SUNNYVALE, CA, USA
METALL. TRANS. A (USA) VOL.13A, NO.8 151-19 AUG. 1982 CODEN: MTTABN
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
ALUMINUM-SILICON CARBIDE WHISKER COMPOSITES CONTAINING NOMINALLY 3 TO 5 PCT LI IN THE MATRIX ALLOYS HAVE BEEN FABRICATED AND TESTED. TENSILE AND COMPRESSION TESTS HAVE BEEN CONDUCTED AT ROOM TEMPERATURE, AND COMPRESSION CREEP TESTS HAVE BEEN CONDUCTED AT ELEVATED TEMPERATURES. LITHIUM ADDITIONS WERE FOUND TO INCREASE THE STRENGTHENING EFFECT OF SILICON CARBIDE WHISKERS AT ROOM AND ELEVATED TEMPERATURES. LITHIUM ALSO REDUCED THE DENSITY OF THE COMPOSITES AND INCREASED THE PLASTIC MODULUS. TRANSMISSION ELECTRON MICROSCOPY SHOWED NO OBVIOUS CHEMICAL REACTION BETWEEN THE WHISKERS AND THE ALUMINUM-LITHIUM ALLOY MATRIX.
Desc.: ALUMINIUM ALLOYS; SILICON COMPOUNDS; LITHIUM ALLOYS; FIBRE REINFORCED COMPOSITES; CREEP; ELASTIC MODULI; HARDENING; TRANSMISSION ELECTRON MICROSCOPE EXAMINATION OF MATERIALS
Ident.: SIC WHISKER REINFORCED AL-LI ALLOYS; TENSILE TESTS; TEM; TRANSMISSION ELECTRON MICROSCOPY; MECHANICAL PROPERTIES; MICROSTRUCTURE; COMPRESSION TESTS; COMPRESSION CREEP TESTS; STRENGTHENING EFFECT; DENSITY; ELASTIC MODULUS
Class Codes: A8140L; A6220H; A8140J; A6220D

Y012013 111 
954893 A82111123
ZINC SELENIDE FOR OPTICAL CERAMICS
SOKOL, V.A.; ROKHLENKO, D.A.; KONONOVA, L.I.; ZAVORUEVA, R.S.; BROMBERG, A.V.
ALL-UNION SCI.-RES. INST. OF CHEM. REAGENTS AND SPECIALLY PURE CHEMICALS, USSR
IZV. AKAD. NAUK SSSR NEORG. MATER. VOL.17, NO.10 1745-8 OCT. 1981
Trans in: INORG. MATER. (USA) VOL.17, NO.10 1287-90 OCT. 1981 CODEN: INOMAF
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
THE SYNTHESIS CONDITIONS WERE DETERMINED AND THE PROPERTIES INVESTIGATED OF ZNSE POWDERS OBTAINED BY PRECIPITATION OF ZNSE.N/SUB 2/H/SUB 4/ FROM ZINC SELENITE AMMONIATE AND HYDRAZINE HYDRATE, FOLLOWED BY ITS DECOMPOSITION AND CALCINATION.
Desc.: ZINC COMPOUNDS; POWDER TECHNOLOGY; CERAMICS; OPTICAL MATERIALS; MATERIALS PREPARATION; II-VI SEMICONDUCTORS; PRECIPITATION (PHYSICAL CHEMISTRY)
Ident.: OPTICAL CERAMICS; SYNTHESIS CONDITIONS; ZNSE; POWDERS; PRECIPITATION; ZNSE.N/SUB 2/H/SUB 4/; DECOMPOSITION; CALCINATION
Class Codes: A8120L; A8120E; A4270F

Y012013 112 
935052 A82099404
EUTECTOID DECOMPOSITION PROCESSES OF SOLID SOLUTIONS IN THE HFO/SUB 2/-PRO/SUB 1.5/ AND HFO/SUB 2/-MGO SYSTEMS AND THEIR INFLUENCE ON THE PHYSICO-CHEMICAL PROPERTIES OF REFRACTORY MATERIALS
KRAVCHINSKAYA, R.V.; TIKHONOV, P.A.; KOEHLER, E.K.
INST. OF SILICATE CHEM., ACAD. OF SCI., LENINGRAD, USSR
CERAM. INT. (ITALY) VOL 8, NO.2 70-3 1982 CODEN: CINNDH
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: ENG. (6 Refs)
MICROSCOPY AND ELECTRON MICROPROBE ANALYSIS WERE USED TO STUDY THE PROCESS OF EUTECTOID DECOMPOSITION OF CUBIC SOLID SOLUTIONS IN THE HFO/SUB 2/-PRO/SUB 1.5/ AND HFO/SUB 2/-MGO SYSTEMS. IN THE FIRST SYSTEM THIS OCCURS BY FORMING OF A PR-RICH PYROCHLORE-TYPE PHASE AND MONOCLINIC HFO/SUB 2/ SOLID SOLUTION. IN THE HFO/SUB 2?-MGO SYSTEM, MAGNESIUM CONCENTRATES MAINLY AT CRYSTAL BOUNDARIES YIELDING A MGO SOLID SOLUTION; THE SECOND, MGO-POO? PHASE IS A HFO/SUB 2/-BASED MONOCLINIC SOLID SOLUTION. AS A RESULT OF DECOMPOSITION THE ELECTRICAL CONDUCTIVITY OF THE CUBIC SOLID SOLUTIONS IS REDUCED BY TWO ORDERS OF MAGNITUDE IN THE HFO/SUB 2/-PRO/SUB 1.5/ SYSTEM AND MORE THAN ORDERS OF MAGNITUDE IN THE HFO/SUB 2/-MGO SYSTEM.
Desc.: SOLID SOLUTIONS; HAFNIUM COMPOUNDS; PRASEODYMIUM COMPOUNDS; CERAMICS; ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; ELECTRON PROBE ANALYSIS; PHASE DIAGRAMS; PHASE DIAGRAMS; ELECTRON PROBE ANALYSIS; ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; CERAMICS; SOLID SOLUTIONS; MAGNESIUM COMPOUNDS HAFNIUM COMPOUNDS
Ident.: HFO/SUB 2/-PRO/SUB 1.5/ SYSTEM; PHASE DIAGRAMS; SOLID SOLUTIONS; PHYSICO-CHEMICAL PROPERTIES; REFRACTORY MATERIALS; ELECTRON MICROPROBE ANALYSIS; EUTECTOID DECOMPOSITION; CUBIC SOLID SOLUTIONS; HFO/SUB 2/-MGO SYSTEMS; ELECTRICAL CONDUCTIVITY
Class Codes: A8130D; A6470

Y012013 113 
935029 A82099379
ALUMINOMAGNESIUM SPINEL FOR TRANSPARENT CERAMIC
SOKOL, V.A.; ROKHLENKO, D.A.; KONONOVA, L.I.; BROMBERG, A.V.
ALL-UNION SCI. RES. INST. OF CHEM. REAGENTS AND SPECIALLY PURE CHEMICALS, USSR
IZV. AKAD. NAUK SSSR NEORG. MATER. VOL.17, NO.5 896-901 MAY 1981
Trans in: INORG. MATER. (USA) VOL.17, NO.5 636-41 MAY 1981 CODEN: INOM?F
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (15 Refs)
A COMPARATIVE ESTIMATE IS MADE OF THE METHODS OF OBTAINING STOICHIOMETRIC ALUMINOMAGNESIUM SPINEL SUITABLE FOR MAKING OPTICAL CERAMIC ON AN INDUSTRIAL SCALE BY HETEROGENEOUS AND HOMOGENEOUS COPRECIPITATION OF MAGNESIUM AND ALUMINIUM HYDROXIDES AND BY CALCINATION OF MAGNESIUM AND ALUMINIUM SALTS. A METHOD IS EXAMINED OF OBTAINING STOICHIOMETRIC SPINEL SUITABLE FOR MAKING OPTICAL CERAMIC BY SINTERING UNDER PRESSURE BY COCRYSTALLIZATION OF MAGNESIUM  AND ALUMINIUM SULFATES FOLLOWED BY CALCINATION. THE PRODUCT CONSISTS OF PARTICLES SMALLER THAN 0.4 MUM AND IT CONTAINS =99PERCENT OF SPINEL. THE METHOD IS TECHNOLOGICALLY EFFECTIVE AND ENSURES STABLE PREPARATION OF A PRODUCT UNDER INDUSTRIAL CONDITIONS WITH A MOLECULAR RATIO MGO/AL/SUB 2/O/SUB 3/=1 +OR- 0.02.
Desc.: MAGNESIUM COMPOUNDS; ALUMINA; CERAMICS; SINTERING; PRECIPITATION (PHYSICAL CHEMISTRY); HIGH-PRESSURE EFFECTS IN SOLIDS; OPTICAL MATERIALS; TRANSPARENCY
Ident.: PARTICLE SIZE; TRANSPARENT CERAMIC; OPTICAL CERAMIC; COPRECIPITATION; CALCINATION; SINTERING; PRESSURE
Class Codes: A8120L; A8120E; A7820D; A8230; A4270F

Y012013 114 
930354 A82093633
XPS, AES AND FRICTION STUDIES OF SINGLE-CRYSTAL SILICON CARBIDE
MIYOSHI, K.; BUCKLEY, D.H.
LEWIS RES. CENTER, NASA, CLEVELAND, OH, USA
APPL. SURF. SCI. (NETHERLANDS) VOL.10, NO.3 357-76 MAY 1982 CODEN: ASUSDD
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
AN INVESTIGATION WAS CONDUCTED TO EXAMINE THE SURFACE CHEMISTRY AND FRICTION BEHAVIOR OF A SINGLE CRYSTAL SILICON CARBIDE (?001) SURFACE IN SLIDING CONTACT WITH IRON AT VARIOUS TEMPERATURES TO 1500 DEGREESC IN A VACUUM OF 3*10 NP USING X-RAY PHOTOELECTRON AND AUGER ELECTRON SPECTROSCOPIES. THE RESULTS INDICATE THAT GRAPHITE AND CARBIDE-TYPE CARBON ARE SEEN PRIMARILY ON THE SILICON CARBIDE SURFACE IN ADDITION TO SILICON AT TEMPERATURES TO 800 DEGREESC BY XPS AND AES. THE COEFFICIENTS OF FRICTION FOR IRON SLIDING AGAINST A SILICON CARBIDE (0001) SURFACE WERE HIGH AT TEMPERATURES TO 800 DEGREESC. AT 800 DEGREESC, THE SILICON AND CARBIDE-TYPE CARBON ARE AT MAXIMUM INTENSITY IN THE XPS SPECTRA. WITH INCREASING TEMPERATURE ABOVE 800 DEGREESC, THE CONCENTRATION OF THE GRAPHITE INCREASES RAPIDLY ON THE SURFACE, WHILE THAT OF THE CARBIDE-TYPE CARBON AND SILICON DECREASE RAPIDLY AND THIS PRESENCE OF GRAPHITE IS ACCOMPANIED BY A MARKED DECREASE IN FRICTION. THE THICKNESS OF THE GRAPHITE LAYER IS OF THE ORDER OF 2 NM.
Desc.: X-RAY PHOTOELECTRON SPECTRA; AUGER EFFECT; SILICON COMPOUNDS ; FRICTION; SURFACE STRUCTURE
Ident.: FRICTION STUDIES; SINGLE CRYSTAL; SURFACE CHEMISTRY; SLIDING CONTACT; X-RAY PHOTOELECTRON; AUGER ELECTRON SPECTROSCOPIES
Class Codes: A814?P; A6220P; A6820

Y012013 115 
930201 A82093480
SINTERING BEHAVIOR AND MICROSTRUCTURAL DEVELOPMENT OF YTTRIUM-DOPED REACTION-BONDED SILICON NITRIDE
MANGELS, J.A.; TENNENHOUSE, G.J.
FORD MOTOR CO., DEARBORN, MI, USA
AM. CERAM. SOC. BULL. (USA) VOL.60, NO.12 1306-10 DEC. 1981 CODEN: ACSBA7
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
REACTION-BONDED SI/SUB 3/N/SUB 4/ SAMPLES CONTAINING 4-8PERCENT Y/SUB 2/O/SUB 3/ WERE SINTERED OVER THE TEMPERATURE RANGE 1800 DEGREES-1925 DEGREESC. SIGNIFICANT DENSIFICATION AND GRAIN GROWTH OCCURRED AT THE HIGHER TEMPERATURES AND HIGHER Y/SUB 2/O/SUB 3/ CONCENTRATIONS. AT LOWER Y/SUB 2/O/SUB 3/ CONCENTRATIONS AND HIGHER TEMPERATURES, GRAIN COARSENING OCCURRED WITHOUT SIGNIFICANT DENSIFICATION. THE EXAGGERATED GRAIN GROWTH WHICH OCCURRED AT THE HIGHER TEMPERATURES AND HIGHER Y/SUB 2/O/SUB 3/ CONCENTRATIONS RESULTED IN LOWER ROOM-TEMPERATURE STRENGTHS.
Desc.: DENSIFICATION; SINTERING; POWDER TECHNOLOGY; SILICON COMPOUNDS; YTTRIUM COMPOUNDS; CERAMICS; CRYSTAL MICROSTRUCTURE; REFRACTORIES; GRAIN GROWTH
Ident.: SI/SUB 3/N/SUB 4/: Y/SUB 2/O/SUB 3/; SINTERING; STRENGTH DEVELOPMENT; MICROSTRUCTURAL DEVELOPMENT; SI/SUB 3/N/SUB 4/; DENSIFICATION GRAIN GROWTH; GRAIN COARSENING
Class Codes: A8120L; A8120E; A8140

Y012013 116 
928851 A82091997, B82046309
STUDY OF HIGH DOSE NITROGEN ION IMPLANTED LAYER ON SILICON SURFACE
SUN HUILING; CHEN MING; WANG PEIDA
INST. OF SEMICONDUCTORS, ACADEMIA SINICA, PEKING, CHINA
CHIN. J. SEMICOND. (CHINA) VOL.3, NO.2 136-40 MARCH 1982 CODEN: PTTPDZ
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: CHINESE (4 Refs)
A STUDY OF THE HIGH RESISTIVITY LAYER FORMED BY HIGH DOSE NITROGEN ION IMPLANTATION ON A SILICON SURFACE IS PRESENTED. IT WILL BE HELPFUL IN ADOPTING ION IMPLANTATION IN THE ISOLATION TECHNOLOGY FOR SEMICONDUCTOR INTEGRATED CIRCUITS. N-TYPE MONOCRYSTALLINE SILICON WITH RESISTIVITY OF 0.5 OMEGA-CM AND (111) ORIENTATION IS USED AS A SUBSTRATE. THE IMPLANTATION ENERGY USED IS 80 KEV WITH HIGH DOSE 1=2*10/SUP 17/ CM/SUP -2/. AFTER THE IMPLANTATION AND ANNEALING, A HIGH RESISTIVITY LAYER WITH GOOD STABILITY IN PHYSICAL, CHEMICAL AND ELECTRICAL PROPERTIES IS FORMED ON THE SURFACE OF THE SUBSTRATE. THE CRYSTAL STRUCTURE AND THE STOICHIOMETRY IS ANALYZED BY MEANS OF AUGER ELECTRON SPECTROSCOPY (AEX), RUTHERFORD CHANNELED AND NONCHANNELED BACKSCATTERING, INFRARED FOURIER SPECTROMETER AND X-RAY PHOTO-ELECTRON SPECTROSCOPY. THE RESULTS PROVE THAT THE IMPLANTED NITROGEN IONS HAVE A GAUSSIAN-SHAPED DISTRIBUTION AND THE AMORPHOUS NITRIDE LAYER MAY CONSIST OF A MATRIX OF SILICON NITRIDE AND SILICON.
Desc.: ION IMPLANTATION; ELEMENTAL SEMICONDUCTORS; HEAVILY DOPED SEMICONDUCTORS; IMPURITY DISTRIBUTION; SILICON; NITROGEN; SURFACE STRUCTURE
Ident.: HIGH DOSE N/SUP +/ ION IMPLANTED LAYER; SI SURFACE; SI: N; HIGH RESISTIVITY LAYER; ISOLATION TECHNOLOGY; SEMICONDUCTOR INTEGRATED CIRCUITS; ANNEALING; CRYSTAL STRUCTURE; STOICHIOMETRY; AUGER ELECTRON SPECTROSCOPY; BACKSCATTERING; INFRARED FOURIER SPECTROMETER; X-RAY PHOTO-ELECTRON SPECTROSCOPY; GAUSSIAN-SHAPED DISTRIBUTION
Class Codes: A6170T; A6170W; B2550B; B2520C

Y012013 117 
927524 A82090491
CHEMICAL SHIFTS OF AUGER LINES IN SOLIDS ON THE EXAMPLE OF THE KL/SUB 23/L/SUB 23/ TRANSITION IN SILICON AND ITS COMPOUNDS
FELLENBERG, R.; STREUBEL, P.; MEISEL, A.
SEKTION CHEM., KARL-MARX-UNIV., LEIPZIG, GERMANY
HYS. STATUS SOLIDI B (GERMANY) VOL.112, NO.1 55-60 1 JULY 1982 CODEN: PSSBBD
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (16 Refs)
THE LINE POSITION OF THE SI KL/SUB 23/L/SUB 23/ AUGER TRANSITION IS MEASURED IN SILICON, SILICON CARBIDE, SILICON NITRIDE, SILICON DIOXIDE, AND SODIUM HEXAFLUOROSILICATE. THE CHEMICAL SHIFTS WITH REFERENCE TO SILICON ARE ESTIMATED AND COMPARED WITH THE CORRESPONDING SHIFTS OF PHOTOELECTRON PEAKS OF SI 1S AND SI 2P. THE CHANGE OF THE EXTRA-ATOMIC STATIC RELAXATION ENERGY DELTA R/SUB S//SUP EA/ DETERMINED IN THIS WAY IS PROPORTIONAL IN FIRST APPROXIMATION TO PAULING'S ELECTRONEGATIVITY. THE DESCRIBED METHOD MAKES IT POSSIBLE TO ESTIMATE PARAMETERS OF BONDING IN ATOMIC RANGES IN SOLIDS CONTAINING SILICON.
Desc.: SILICON; AUGER EFFECT; CHEMICAL SHIFT; PHOTOELECTRON SPECTRA ; ELECTRONEGATIVITY
Ident.: SIC; SIN; SIO/SUB 2/; AUGER LINES; KL/SUB 23/L/SUB 23/ TRANSITION; SI; CHEMICAL SHIFTS; PHOTOELECTRON PEAKS; PAULING'S ELECTRONEGATIVITY 
Class Codes: A3280H; A7920F

Y012013 118 
920538 A82088210
FRICTION AND WEAR OF DIAMOND MATERIALS AND OTHER CERAMICS AGAINST METAL
MEHAN, R.L.; HAYDEN, S.C.
GENERAL ELECTRIC CO., WORTHINGTON, OH, USA
WEAR (SWITZERLAND) VOL.74, NO.2 195-212 22 DEC. 1981 CODEN: WEARCJ
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (16 Refs)
UTILIZING THE FALEX ROTATING RING AND BLOCK TECHNIQUE, THE AUTHORS EVALUATED THE PERFORMANCE OF SEVERAL DIAMOND MATERIALS AND ALUMINA, SILICON CARBIDE AND CEMENTED TUNGSTEN CARBIDE SLIDING AGAINST HARDENED STEEL 4620 AND A NITRIDED 12PERCENT CR STEEL. ALL TESTS WERE PERFORMED AT 50 REV MIN/SUP -1/, LUBRICATED AND UNLUBRICATED, IN BOTH CONTINUOUS AND 75 DEGREES OSCILLATING RING MOTION. THE LUBRICATING FLUID WAS MINERAL OIL WITH A KINEMATIC VISCOSITY OF 72 CST. IT WAS FOUND THAT GROUND DIAMOND COMPACTS, IRRESPECTIVE OF THE GRAIN SIZE IN THE COMPACTS, RESULTED IN THE BEST COMBINATION OF LOW FRICTION AND LOW METALLIC WEAR RATES UNDER BOTH LUBRICATED AND DUNLUBRICATED CONDITIONS. METAL WEAR RESULTING FROM DIAMOND-METAL SLIDING WAS FOUND TO BE DEPENDENT ON THE COMPACT SURFACE ROUGHNESS, AND AN INITIAL ROUGHNESS EXCEEDING ABOUT 0.36 MUM (14 MUIN) CENTER-LINE AVERAGE LED TO SEVERE WEAR UNDER SOME CONDITIONS.
Desc.: FRICTION; WEAR; DIAMOND; CERAMICS; FRICTION; WEAR
Ident.: WEAR; DIAMOND MATERIALS; CERAMICS; METAL; FALEX ROTATING RING; BLOCK TECHNIQUE; GRAIN SIZE; DIAMOND-METAL SLIDING; SURFACE ROUGHNESS
Class Codes: A8140P; A6220P

Y012013 119 
901049 A82076682
SEGREGATION AND NEAR-SURFACE DIFFUSION FOR UNDOPED AND CR-DOPED COO
NOWOTNY, J.; SIKORA, I.; WAGNER, J.B., JR.
INST. OF CATALYSIS AND SURFACE CHEM., POLISH ACAD. OF SCI., KRAKOW, POLAND
J. AM. CERAM. SOC. (USA) VOL.65, NO.4 192-6 APRIL 1982 CODEN: JACTAW
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (29 Refs)
WORK FUNCTION MEASUREMENTS WERE USED TO MONITOR THE REEQUILIBRATION KINETICS FOR THE SYSTEM COO-CR/SUB 2/O/SUB 3/ INVOLVING UNDOPED COO, CR-DOPED COO, COCR/SUB 2/O/SUB 4/ SPINEL PHASE, AND UNDOPED CR/SUB /O/SUB 3/. THE ACTIVATION ENERGY OF CHEMICAL DIFFUSION FOR THE NEAR-SURFACE LAYER WAS DETERMINED FOR THESE MATERIALS. COMBINED WORK FUNCTION, X-RAY, AND ESCA STUDIES INDICATE THAT CR SEGREGATES IN COO-CR/SUB 2/O/SUB 3/ SOLID SOLUTIONS, WHICH LEADS TO THE FORMATION OF A NEW 'SURFACE PHASE' OF SPINEL-LIKE STRUCTURE.
Desc.: COBALT COMPOUNDS; CHROMIUM COMPOUNDS; SOLID SOLUTIONS; SEGREGATION; CERAMICS; WORK FUNCTION; DIFFUSION IN SOLIDS; SURFACE DIFFUSION
Ident.: PURE COO; SEGREGATION; CERAMIC; X-RAY STUDY; NEAR-SURFACE DIFFUSION; CR-OPED COO; REEQUILIBRATION KINETICS; COO-CR/SUB 2/O/SUB 3/; COCR/SUB 2/O/SUB 4/ SPINEL PHASE; UNDOPED CR/SUB 2/O/SUB 3/; ACTIVATION ENERGY; CHEMICAL DIFFUSION; WORK FUNCTION; ESCA STUDIES; SOLID SOLUTIONS
Class Codes: A6475; A6630N; A6820

Y012013 120 
879541 A82060267, B82030684
ULTRAFINE FINISHING OF CERAMICS AND METALS BY FLOAT POLISHING
NAMBA, Y.; TSUWA, H.
DEPT. OF PRECISION ENGNG., OSAKA UNIV., SUITA, OSAKA, JAPAN
BENNETT, H.E.; GLASS, A.J.; GUENTHER, A.H.; NEWNAM, B.E. (Editors)
LASER INDUCED DAMAGE IN OPTICAL MATERIALS: 1980. PROCEEDINGS OF A SYMPOSIUM (NBS-SP-620) 171-9 1981
30 SEPT.-1 OCT. 1980 BOULDER, CO, USA
Publ: NBS, WASHINGTON, DC, USA
XVII+466 pp.
Treatment: PRACTICAL
Doc. Type: CONF. PAP.
Lang.: Eng. (11 Refs)
DEALS WITH A METHOD OF FINISHING CERAMICS AND METALS TO OBTAIN A HIGH DEGREE OF SMOOTHNESS, AND ALSO DEALS WITH GEOMETRICAL, CRYSTALLOGRAPHIC,  MAGNETIC, OPTICAL AND CHEMICAL PROPERTIES OF THE FINISHED SURFACES. FLOAT POLISHING IS DEVELOPED TO POLISH MANY ELECTRONIC AND OPTICAL MATERIALS ULTRAFINELY WITHOUT DEFORMED LAYERS. SAMPLES WERE MECHANICALLY POLISHED ON A TIN LAP HAVING FINE GROOVES OF CONCENTRIC CIRCLES WHILE IN A POLISHING FLUID MIXED WITH THE PURE WATER AND FINE POWDER. THE SAMPLES WERE SUSPENDED IN THE POLISHING FLUID BY HYDRODYNAMIC PHENOMENA DUE TO THE SPECIALLY SHAPED TIN LAP. VERY GOOD FLATNESS, EXCELLENT RETENTION OF EDGE GEOMETRY AND EXTREMELY SMALL SURFACE ROUGHNESS OF 10AA RZ WERE OBTAINED ON THE FINISHED SURFACES OF AMORPHOUS MATERIALS AND SINGLE CRYSTALS. THE SURFACE ROUGHNESS OF 20AA RZ WERE OBTAINED ON POLYCRYSTALLINE MATERIALS BY FLOAT POLISHING USING SPECIAL TECHNIQUES IN ORDER TO REDUCE CRYSTALLOGRAPHIC ANISOTROPY.
Desc.: METALS; CERAMICS; OPTICAL MATERIALS; OPTICAL WORKSHOP TECHNIQUES; POLISHING; POLISHING; OPTICAL MATERIALS; OPTICAL WORKSHOP TECHNIQUES
Ident.: ULTRAFINE FINISHING; GEOMETRICAL PROPERTIES; MAGNETIC PROPERTIES; CRYSTALLOGRAPHIC PROPERTIES; OPTICAL PROPERTIES; CERAMICS; METALS; FLOAT POLISHING; CHEMICAL PROPERTIES; OPTICAL MATERIALS; POLISHING FLUID; HYDRODYNAMIC PHENOMENA; SPECIALLY SHAPED TIN LAP; GOOD FLATNESS; EDGE GEOMETRY; SURFACE ROUGHNESS; CRYSTALLOGRAPHIC ANISOTROPY
Class Codes: A4285D; A4270F; A8160B; A81?0D; B4110; B0540; B0530

Y012013 121 
874724 B82030484
HIGH PRESSURE OXIDATION OF SILICON AND ITS APPLICATION TO FABRICATION OF MOS LSI
MIYOSHI, H.; HIRAYAMA, M.; TSUBOUCHI, N.; ABE, H.
NISHIZAWA, J. (Editors)
SEMICONDUCTOR. TECHNOLOGIES. 1982 82-99 1981
Publ: NORTH-HOLLAND, AMSTERDAM, NETHERLANDS
Treatment: APPLIC; EXPERIMENTAL
Doc. Type: BOOK CHAPTER
Lang.: Eng. (22 Refs)
PRESENTS A HIGH PRESSURE OXIDATION METHOD AND THE PHYSICAL, CHEMICAL, AND ELECTRICAL PROPERTIES OF SILICON DIOXIDE FILM FORMED BY HIGH PRESSURE OXIDATION. THE APPLICATIONS OF THE HPO METHOD TO THE FABRICATION OF MOS LSI ARE DESCRIBED. HIGH PRESSURE SELECTIVE OXIDATION OF SILICON USING SILICON NITRIDE FILM AS A MASK WAS INVESTIGATED. OXIDATION-INDUCED STACKING FAULTS WERE FOUND TO BE REDUCED SIGNIFICANTLY. HIGH PRESSURE OXIDATION IMPROVED ELECTRICAL PERFORMANCE, SUCH AS REFRESH TIME CHARACTERISTICS AND DIELECTRIC BREAKDOWN STRENGTH OF A GATE OXIDE IN A MOS DYNAMIC RAM. FURTHERMORE, AN APPLICATION TO THE SECOND GATE OXIDE FORMATION IN THE MOS RAM WITH DOUBLE POLYSILICON STRUCTURE WAS EXAMINED. THE HIGH PRESSURE OXIDATION METHOD CAN PROVIDE A SIMPLE WAY TO GROW A THICK INTERMEDIATE OXIDE LAYER BETWEEN DOUBLE POLYSILICON LAYERS AND IMPROVE THE ELECTRICAL PERFORMANCE OF MOS LSI.
Desc.: INTEGRATED CIRCUIT TECHNOLOGY; OXIDATION; SILICON; ELEMENTAL SEMICONDUCTORS; LARGE SCALE INTEGRATION; RANDOM-ACCESS STORAGE; FIELD EFFECT INTEGRATED CIRCUITS; INTEGRATED MEMORY CIRCUITS
Ident.: SILICON OXIDATION; SIO/SUB 2/ PROPERTIES; SI/SUB 3/N/SUB 4/ MASK; STACKING FAULTS REDUCTION; PHYSICAL PROPERTIES; CHEMICAL PROPERTIES; IC TECHNOLOGY; MOS; LSI; HIGH PRESSURE OXIDATION; ELECTRICAL PROPERTIES; HPO; FABRICATION; SELECTIVE OXIDATION; REFRESH TIME CHARACTERISTICS; DIELECTRIC BREAKDOWN STRENGTH; GATE OXIDE; DYNAMIC RA?; SECOND GATE OXIDE FORMATION; THICK INTERMEDIATE OXIDE
Class Codes: B2570C; B2550E; B1265D

Y012013 122 
874253 A82056743, B82029995
ELECTRIC CONDUCTION IN NITROGEN-RICH SILICON NITRIDE FILMS PRODUCED BY SIH/SUB 2/CL/SUB ?/ AND HN/SUB 3/ (MNOS DEVICE APPLICATIONS)
WATANABE, K.; WAKAYAMA, S.
SONY RES. CENTER, YOKOHAMA, JAPAN
J. APPL. PHYS. (USA) VOL.53, NO.1 568-75 JAN. 1982 CODEN: JAPIAU
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (24 Refs)
THE COMPOSITION AND CONDUCTION OF SILICON NITRIDE FILM FORMED BY THE REACTION OF SIH/SUB 2/CL/SUB 2/ AND NH/SUB 3/ AT A LOW PRESSURE WERE STUDIED. IN THE RANGE INVESTIGATED, THIS FILM IS AMORPHOUS N-RICH SILICON NITRIDE NO MATTER WHAT THE GROWTH CONDITIONS. CONDUCTION AT ROOM TEMPERATURE IN A STEADY STATE WAS INVESTIGATED BY ANALYZING THE CHARGE DISTRIBUTION WITHOUT USING AN AVERAGE FIELD APPROXIMATION. PROBABLE CHARGE DISTRIBUTION IN THE NITRIDE WAS DERIVED FROM THE THICKNESS DEPENDENCE OF THE APPLIED VOLTAGE AT A CONSTANT CURRENT AND FROM THE FLAT-BAND VOLTAGE SHIFT GIVING THE INTERFACE FIELDS. WHEN CURRENT DENSITY J=10/SUP -5/ A/CM/SUP -2/, THE AUTHORS OBTAINED N/SUB T/ (0)=3*10/SUP 18/ CM/SUP -3/, INTERFACE FIELDS ?E/SUB S/=4.0*10/SUP 6/ V/CM, AND THE CHARGE CENTROID OMEGA=210 AA. THE DYNAMIC DIELECTRIC CONSTANT IS CALCULATED AS EPSILON/SUB D/=3.9 FROM THE TEMPERATURE DEPENDENCE OF CONDUCTION, USING THE AVERAGE FIELD APPROXIMATION. THE AVERAGE FIELD APPROXIMATION IS VALID ONLY AT HIGH TEMPERATURES.
Desc.: SILICON COMPOUNDS; ELECTRONIC CONDUCTION IN INSULATING THIN FILMS; AMORPHOUS STATE; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
Ident.: SI/SUB 3/N/SUB 4/ FILM; MNOS DEVICES; COMPOSITION; CONDUCTION; AMORPHOUS; ROOM TEMPERATURE; CHARGE DISTRIBUTION; THICKNESS DEPENDENCE; APPLIED VOLTAGE; FLAT-BAND VOLTAGE SHIFT; CURRENT DENSITY; INTERFACE FIELDS; CHARGE CENTROID;  DYNAMIC DIELECTRIC CONSTANT; AVERAGE FIELD APPROXIMATION
Class Codes: A7360H; B2530F

Y012013 123 
873957 A82050874, B82029668
MICROSTRUCTURE OF SRTIO/SUB 3/ BOUNDARY-LAYER CAPACITOR MATERIAL
FRANKEN, P.E.C.; VIEGERS, M.P.A.; GERRING, A.P.
PHILIPS RES. LABS., EINDHOVEN, NETHERLANDS
J. AM. CERAM. SOC. (USA) VOL.64, NO.12 687-90 DEC 1981 CODEN: JACTAW
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (9 Refs)
SRTIO/SUB 3/ CAPACITOR MATERIAL WITH INDIFFUSED BI/SUB 2/O/SUB 3/ WAS STUDIED USING SEM, ESCA COMBINED WITH AR/SUP +/ ION-ETCHING, AND TEM EQUIPPED WITH EDX. THE APPARENT THICKNESS OF A SECOND-PHASE LAYER OBSERVED WITH SEM WAS FOUND TO BE INFLUENCED BY IN-DEPTH EFFECTS. ESCA AND TEM RESULTS SHOW THAT ONLY A 10- TO 100-NM THICK LAYER OF SECOND PHASE IS PRESENT BETWEEN THE SRTIO/SUB 3/ GRAINS. IN ADDITION, IT WAS FOUND WITH TEM THAT THE OUTER PART OF EACH GRAIN CONTAINED BI (AT MOST 2 AT.PERCENT ), REPRESENTING A DIFFUSION LAYER. THESE RESULTS HAVE IMPLICATIONS FOR THE BOUNDARY-LAYER MODEL PROPOSED TO EXPLAIN THE DIELECTRIC PROPERTIES.
Desc.: STRONTIUM COMPOUNDS; CAPACITORS; TRANSMISSION ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; CERAMICS; ETCHING; ION BEAM EFFECTS; CHEMICAL ANALYSIS
Ident.: CRYSTAL MICROSTRUCTURE; SRTIO/SUB 3/ BOUNDARY-LAYER CAPACITOR MATERIAL; INDIFFUSED BI/SUB 2/O/SUB 3/; SEM; ESCA; AR/SUP +/ ION-ETCHING; TEM; EDX; SECOND-PHASE LAYER; IN-DEPTH EFFECTS; BOUNDARY-LAYER MODEL; DIELECTRIC PROPERTIES
Class Codes: A6480G; B2130; B2810

Y012013 124 
868328 A82057322
SLIP CASTING OF SILICON NITRIDE FOR PRESSURELESS SINTERING
RABINOVICH, E.M.; LEITNER, SH.; GOLDENBERG, A.
ISRAEL CERAMIC AND SILICATE INST., TECH. CITY, HAIFA, ISRAEL
J. MATER. SCI. (GB) VOL.17, NO.2 323-8 FEB. 1982 CODEN: JMTSAS
Doc. Type: JRNL PAP.
Lang.: Eng. (7 Refs)
PROPERTIES OF AQUEOUS SLIPS OF SILICON NITRIDE/SPINEL MIXTURES WERE STUDIED. VANISPERSE CB WAS USED AS DEFLOCCULANT. IT WAS SHOWN THAT MIXTURES PREVIOUSLY MILLED IN WATER FORM STABLE SLIPS, WHILE THOSE MILLED IN ISOPROPANOL FORM JELLY-LIKE AQUEOUS SUSPENSIONS UNSUITABLE FOR CASTING. A SINGLE-STAGE SLIP MAY BE PREPARED BY MILLING AND MIXING SI/SUB 3/N/SUB 4/ POWDER WITH SPINEL AND WATER WITHOUT A DEFLOCCULANT. VISCOSITY, PH AND DENSITY OF THE SLIPS WERE STUDIED AND A SET OF CRUCIBLES WAS CAST AND FIRED IN NITROGEN AT 1650 DEGREESC FOR 1 H TO BULK DENSITY 3.1 G CM/SUP -1.
Desc.: SILICON COMPOUNDS; REFRACTORIES; SINTERING
Ident.: PRESSURELESS SINTERING; DEFLOCCULA?T; MILLING; MIXING; POWDER; SPINEL; WATER; PH; DENSITY; BULK DENSITY
Class Codes: A8120L; A8120E

Y012013 125 
64105 A82052251
CHEMICAL STABILITY OF NASICON
SCHMID, H.; DE JONGHE, L.C.; CAMERON, C.
LAWRENCE BERKELEY LAB., UNIV. OF CALIFORNIA, BERKELEY, CA, USA
SOLID STATE IONICS (NETHERLANDS) VOL.6, NO.1 57-63 FEB. 1982 CODEN: SSIOD3
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (4 Refs)
NASICON SOLID ELECTROLYTES WERE TESTED BY IMMERSION IN LIQUID SODIUM AROUND 300 DEGREESC. THE ELECTROLYTES WERE FOUND TO DEGRADE DUE TO CHEMICAL REACTION WITH SODIUM. THIS REACTION CHANGES THE LATTICE PARAMETERS OF THE ELECTROLYTES SUFFICIENTLY TO CAUSE FRACTURE. WHILE THE RAPIDITY WITH WHICH THE DEGRADATION OCCURS DEPENDS ON THE ELECTROLYTE PREPARATION METHOD, THE RESULTS INDICATE THAT A CHEMICAL STABILIZATION OF NASICON TOWARDS SODIUM SHOULD BE SOUGHT TO MAKE IT A USEFUL ELECTROLYTE.
Desc.: SODIUM COMPOUNDS; SILICON COMPOUNDS; ZIRCONIUM COMPOUNDS; SUPERIONIC CONDUCTING MATERIALS; LATTICE CONSTANTS; FRACTURE; SURFACE CHEMISTRY; X-RAY DIFFRACTION EXAMINATION OF MATERIALS; CRACKS; CHEMICAL REACTIONS; CERAMICS
Ident.: NA/SUB 1+X/SI/SUB X/ZR/SUB 2/P/SUB 3-X/O/SUB 12/; CHEMICAL STABILITY; NASICON; SOLID ELECTROLYTES; CHEMICAL REACTION; LATTICE PARAMETERS; FRACTURE; DEGRADATION
Class Codes: A8265J; A6220M; A8160D; A8140N

Y012013 126 
857905 A82045218, B82025154
ESCA INVESTIGATION OF ION BEAM SNTHESIZED SILICON NITRIDE PASSIVATING LAYERS ON SILICON
YADAV, A.D.; JOSHI, M.C.
DEPT. OF PHYS., UNIV. OF BOMBAY, BOMBAY, INDIA
NUCL. INSTRUM. AND METHODS PHYS. RES. (NETHERLANDS) VOL.191, NO.1-3 293-6 31 DEC. 1981 CODEN: NIMRD9
PROCEEDINGS OF THE FIFTH INTERNATIONAL CONF. ON ION BEAM ANALYSIS 16-20 FEB. 1981 SYDNEY, AUSTRALIA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (10 Refs)
SI/SUB 3/N SUB 4/ LAYERS ARE SYNTHESIZED BY (/SUP 14/N/SUB 2/)/SUP +/ ION IMPLANTATION INTO SILICON AT 30 KEV ENERGY UP TO A TOTAL DOSE OF 1*10/SUP 18/ IONS CM/SUP -2/. XPS DEPTH PROFILE STUDIES ARE CARRIED OUT ON NON-ANNEALED AND ANNEALED SAMPLES. VACUUM ANNEALING AT 900 DEGREESC FOR 2.5 H IS FOUND TO BE SUFFICIENT TO GROW SILICON NITRIDE LAYERS HAVING UNIFORM DEPTH DISTRIBUTION.
Desc.: ION IMPLANTATION; ANNEALING; X-RAY PHOTOELECTRON SPECTRA; PASSIVATION; SEMICONDUCTOR-INSULATOR BOUNDARIES; SILICON COMPOUNDS; SILICON ; ELEMENTAL SEMICONDUCTORS
Ident.: VACUUM ANNEALING; /SUP 14/N/SUP +/ ION IMPLANTATION; 900 DEGREE C; X-RAY PHOTOELECTRON SPECTRUM; SI/SUB 3/N/SUB 4/ PASSIVITING LAYERS; SI/SUB 3/N/SUB 4/-SI; SEMICONDUCTORS; 30 KEV ENERGY; XPS DEPTH PROFILE; DEPTH DISTRIBUTION
Class Codes: A6170T; A7960E; A7340Q; B2550E; B2530F

Y012013 127 
852189 A82045229
KINETICS OF BUILDUP OF SILICON NITRIDE UNDER BOMBARDMENT OF SILICON WITH NITROGEN IONS
LEZHEIKO, L.V.; LYUBOPYTOVA, E.V.; SMIRNOV, L.S.
INST. OF SEMICONDUCTOR PHYS., ACAD. OF SCI., NOVOSIBIRSK, USSR
ZH. TEKH. FIZ. (USSR) VOL.51, NO.4 818-22 APRIL 1981 CODEN: ZTEFA3
Trans in: SOV. PHYS.-TECH. PHYS. (USA) VOL.26, NO.4 483-6 APRIL 1981 CODEN: SPTPA3
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (6 Refs)
A STUDY HAS BEEN MADE OF THE KINETICS OF BUILDUP OF THE SILICON NITRIDE PHASE UPON IMPLANTATION OF NITROGEN IONS AS A FUNCTION OF THE CURRENT DENSITY AND THE TEMPERATURE. ON THE BASIS OF AN ANALYSIS OF THE EXPERIMENTAL DATA THE AUTHORS PROPOSE MECHANISMS OF THE PROCESSES AND DESCRIBE THE PHASE BUILDUP ASSOCIATED WITH THE TWO MAIN REGIMEN OF THE DOSE DEPENDENCE. IT IS ASSUMED THAT IN THE FIRST REGIMEN PHASE NUCLEATION OCCURS DIRECTLY IN THE REGION WHERE IONS ARE STOPPED, WHEREAS THE SECOND IS LIMITED BY THE PROCESS OF DIFFUSION OF NITROGEN ATOMS AND COMPLETION OF THE PHASE BOUNDARY. THE ROLE OF THE CURRENT DENSITY IS REDUCED TO THAT OF HEATING THE SURFACE LAYER OF THE TARGET AND SPEEDING UP THE DIFFUSION.
Desc.: SILICON COMPOUNDS; SURFACE CHEMISTRY; SILICON; ION IMPLANTATION; IMPURITIES
Ident.: SI; SI/SUB 3/N/SUB 4/; N/SUP +/; BUILDUP KINETICS; IMPLANTATION; PHASE BUILDUP; DOSE DEPENDENCE; PHASE NUCLEATION; PHASE BOUNDARY; SURFACE LAYER
Class Codes: A6170T; A8265J

Y012013 128 
849240 A82041634, B82020200
INVESTIGATION OF CVD SILICON NITRIDE ENCAPSULATION FOR GALLIUM ARSENIDE
LEIGH, P.A.
BRITISH TELECOM RES. LABS., MARTLESHAM HEATH, IPSWICH, ENGLAND
INT. J. ELECTRON. (GB) VOL.52, NO.1 23-41 JAN. 1982 CODEN: IJELA2
Doc. Type: JRNL PAP.
Lang.: Eng. (14 Refs)
POST IMPLANT ANNEALING OF GAAS REQUIRES HIGH TEMPERATURE AND SAMPLES NEED TO BE ENCAPSULATED WITH A PASSIVE DIELECTRIC FILM TO PREVENT DECOMPOSITION. THE SUITABILITY OF RAPIDLY DEPOSITED CVD SI/SUB 3/N/SUB 4/ HAS BEEN INVESTIGATED. THE PHYSICAL AND CHEMICAL PROPERTIES OF FILMS HAVE BEEN STUDIED USING A NUMBER OF COMPLEMENTARY PHYSICAL TECHNIQUES. ELLIPSOMETRY WAS USED TO MEASURE FILM THICKNESS AND REFRACTIVE INDEX IN CHARACTERIZATION OF GROWTH CONDITIONS. ANALYSIS OF STOICHIOMETRY AND FILM QUALITY WAS ASSESSED BY RUTHERFORD BACK-SCATTERING ON VITREOUS CARBON AND SILICON SUBSTRATES AND BY AUGER PROFILING ON GAAS. THE EFFECT OF HEAT TREATMENT ON THE ELECTRICAL PROPERTIES OF N-ON-N/SUP +/ EPI-GAAS WAS ASSESSED BY C-V PROFILING,  CATHODOLUMINESCENCE AND DLTS. FINALLY THE APPLICATION OF THIS TECHNOLOGY TO ION IMPLANTATION IN GAAS IS DEMONSTRATED.
Desc.: ANNEALING; III-V SEMICONDUCTORS; GALLIUM ARSENIDE; CVD COATINGS; SILICON COMPOUNDS; ION IMPLANTATION
Ident.: POST-IMPLANT ANNEALING; GAAS; ELLIPSOMETRY; PASSIVE DIELECTRIC FILM ENCAPSULATION; CV SI/SUB 3/N/SUB 4/; FILM THICKNESS; REFRACTIVE INDEX; STOICHIOMETRY; RUTHERFORD BACK-SCATTERING; AUGER PROFILING; C-V PROFILING; CATHODOLUMINESCENCE; DLTS
Class Codes: A8140G; A8115H; A6170T; B2550E; B0520F; B2520D

Y012013 129 
849169 A82041563
SYNTHESIS OF THE SOLID SOLUTION PB (ZR/SUB 0.53/TI/SUB 0.47/)O/SUB 3/ BY CRYOPRECIPITATION
LEVINA, M.E.; MARTON, I.; KOLBENEVA, G.I.; TRET'YAKOV, YU.D.
M.V. LOMONOSOV MOSCOW STATE UNIV., MOSCOW, USSR
IZV. AKAD. NAUK SSSR NEORG. MATER. VOL.16, NO.11 2005-8 NOV. 1980
Trans in: INORG. MATER. (USA) VOL.16, NO.11 1381-4 NOV. 1980 CODEN: INOMAF
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (9 Refs)
USING CRYOPRECIPITATION THE AUTHORS HAVE OBTAINED POWDERS OF SOLID SOLUTIONS PB (Z?/SUB 0.53/-TI/SUB 0.47/)O/SUB 3/ AND PB/SUB 1-/XBI/SUB 2/3X/ (ZR/SUB 0.53/TI/SUB 0.47/)O/SUB 3/ WITH HIGH CHEMICAL UNIFORMITY AND ENHANCED SINTERING ACTIVITY. THE PROPERTIES OF THE SYNTHESIZED CERAMIC HAVE BEEN INVESTIGATED. INCORPORATION OF 0.5 MOLEPERCENT BI/SUB 2/O/SUB 3/ INTO THE CERAMIC SHARPLY INCREASES WITH DIELECTRIC CONSTANT, WHICH EXCEEDS 3*10/SUP 4/ AT THE CURIE POINT. AN INCREASE IN THE BI/SUB 2/O/SUB 3/ CONTENT OF THE CERAMIC FROM 0? TO 1 MOLEPERCENT LEADS TO A MONOTONIC DECREASE IN THE CURIE POINT FROM 367 TO 347 DEGREESC AND PROMOTES AN INCREASE IN THE GRAIN SIZE DURING SINTERING.
Desc.: PRECIPITATION (PHYSICAL CHEMISTRY); CERAMICS; PERMITTIVITY; FERROELECTRIC CURIE TEMPERATURE; POWDER TECHNOLOGY; LEAD COMPOUNDS; CRYOGENICS; FERROELECTRIC MATERIALS; SOLID SOLUTIONS
Ident.: PIEZOELECTRIC CERAMIC; FERROELECTRIC; PZT; SYNTHESIS; SOLID SOLUTION; PB (ZR/SUB 0.53/TI/SUB 0.47/)O/SUB 3/; CRYOPRECIPITATION; POWDERS HIGH CHEMICAL UNIFORMITY; ENHANCED SINTERING ACTIVITY; DIELECTRIC CONSTANT BI/SUB 2/O/SUB 3/ CONTENT; CURIE POINT; GRAIN SIZE
Class Codes: A8120L; A7720; A8120E; A7780B

Y012013 130 
848899 A82041283
INVESTIGATION OF BATIO/SUB 3/-BASED FERROELECTRIC MATERIALS BY MEANS OF CONTACT VOLTAMMETRY
SAPOZHNIKOVA, E.YA.; MAIDUOVA, T.P.; ROIZENBLAT, E.M.; SAFONOVA, S.V.
ALL-UNION SCI.-RES. INST. OF REAGENTS AND CHEM. PURE MATERIALS FOR ELECTRONICS, USSR
IZV. AKAD. NAUK SSSR NEORG. MATER. VOL.16, NO.11 1995-8 NOV. 1980
Trans in: INORG MATER. (USA) VOL.16, NO.11 1371-4 NOV. 1980 CODEN: INOMAF
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (8 Refs)
BY THE ELECTROCHEMICAL METHOD IT IS SHOWN THAT IN THE STAGE OF SYNTHESIS OF THE MATERIAL VK-4 OBTAINED BY COPRECIPITATION, DEFECTS WITH ACCEPTOR PROPERTIES ARE FORMED. ACCORDING TO THE NATURE OF THE PRECIPITATING AGENT, THE RESULTING HOLES ARE LOCALIZED ON CR AND/OR SN CATIONS. THESE DEFECTS CAN INCREASE THE COEFFICIENT OF NONLINEARITY OF THE DIELECTRIC PERMITTIVITY OF THE MATERIAL.
Desc.: VOLTAMMETRY (CHEMICAL ANALYSIS); CERAMICS; FERROELECTRIC MATERIALS; PERMITTIVITY; PRECIPITATION (PHYSICAL CHEMISTRY); DEFECTS ELECTRON ENERGY STATES; BARIUM COMPOUNDS; LOCALISED ELECTRON STATES; MATERIALS PREPARATION; TIN; CHROMIUM
Ident.: CR CATIONS; PEROVSKITE; DEGREE OF OXIDATION; ADDITIVES INFLUENCE; CYCLIC VOLT AMPERE CURVES; ANNEALING; BAO-SNO-CR/SUB 2/O/SUB 3/-TIO/SUB 2/ SYSTEM; ELECTROCHEMICAL INVESTIGATION; BATIO/SUB 3/-BASED FERROELECTRIC MATERIALS; CONTACT VOLTAMMETRY; STAGE OF SYNTHESIS; COPRECIPITATION; DEFECTS WITH ACCEPTOR PROPERTIES; ROLES; LOCALIZED; SN CATIONS; COEFFICIENT OF NONLINEARITY; DIELECTRIC PERMITTIVITY
Class Codes: A7780; A8280F; A8120L; A7720; A7155H

Y012013 131 
838328 A82036821
DETERMINATION OF PORE STRUCTURE IN REACTION SINTERED SILICON NITRIDE
COHRT, H.; PORZ, F.; THUMMLER, F.
INST. FUR WERKSTOFFKUNDE II, UNIV. KARLSRUHE, KARLSRUHE, GERMANY
POWDER METALL. INT. (GERMANY) VOL.13, NO.3 121-5 AUG. 1981 CODEN: PWMIBW
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (10 Refs)
THE OPEN POROSITY OF 4 REACTION SINTERED SILICON NITRIDE (RBSN) MATERIALS IS CHARACTERIZED WITH THE AID OF MERCURY POROSIMETRY. THE PROCESSES OCCURRING DURING INTRUSION AND EXTRUSION OF THE MERCURY AS WELL AS THE EFFECT OF PRESSURE CHANGE RATE UPON MEASURED DATA ARE DISCUSSED. THE PLOTTING OF HYSTERESIS CURVES PERMITS A DIFFERENTIATION BETWEEN VOID VOLUME THAT CANNOT BE DRAINED AND CHANNEL VOLUME. THE LENGTH OF THE CHANNELS CONTAINED IN THE RBSN CAN BE ESTIMATED BY THE DISTRIBUTION OF THE CHANNEL VOLUME THAT CAN BE DRAINED. THESE VALUES OF A MAGNITUDE OF L/SUB G/=10/SUP 6/ M/G COULD BE CONFIRMED BY MEASUREMENT OF LOW TEMPERATURE-NITROGEN ADSORPTION.
Desc.: SILICON COMPOUNDS; SINTERING; EXTRUSION; VOIDS (SOLID); POROUS MATERIALS; CERAMICS
Ident.: SI/SUB 3/N/SUB 4/; REACTION SINTERING; VOID VOLUME; PORE STRUCTURE; OPEN POROSITY; MERCURY POROSIMETRY; INTRUSION; EXTRUSION; HYSTERESIS CURVES; CHANNEL VOLUME; RBSN
Class Codes: A8120L; A8120E

Y012013 132 
830504 A82022554, B82018416
SOLID ELECTROLYTE COATINGS FOR ELECTROCHEMICAL DEVICES
FARRINGTON, G.C.
DEPT. OF MATERIALS SCI. OF ENGNG., UNIV. OF PENNSYLVANIA, PHILADELPHIA, PA, USA
THIN SOLID FILMS (SWITZERLAND) VOL.83, NO.4 455 25 SEPT. 1981 CODEN: THSFAP
INTERNATIONAL CONF. ON METALLURGICAL COATINGS 6-10 APRIL 1981 SAN FRANCISCO, CA, USA
Treatment: GENERAL, REVIEW
Doc. Type: CONF. PAP.
Lang.: Eng.
SUMMARY FORM ONLY GIVEN. THE AUTHOR FIRST COMPARES AND CONTRASTS THE CHARACTERISTICS OF LIQUID AND SOLID ELECTROLYTES. IONIC CONDUCTIVITY, CHEMICAL STABILITY AND IONIC SPECIFICITY FOR BOTH TYPES OF ELECTROLYTES ARE BRIEFLY REVIEWED. NEW ELECTROCHEMICAL DEVICES WHICH HAVE BEEN PROPOSED OR DEVELOPED TO EXPLOIT THE SPECIAL PROPERTIES OF HIGH CONDUCTIVITY SOLID ELECTROLYTES ARE DISCUSSED. INCLUDED ARE HIGH ENERGY DENSITY BATTERIES, SOLID STATE BATTERIES, CHEMICAL SENSORS AND FUEL CELLS. THE DEVELOPMENT OF NOVEL SOLID ELECTROLYTE DEVICES POSES A NUMBER OF CHALLENGES FOR SOLID ELECTROLYTE FABRICATION. PRESSING AND SINTERING, A TRADIATIONAL METHOD OF CERAMICS PREPARATION, IS THE BASIS OF SOLID ELECTROLYTE PRODUCTION FOR THE HIGH ENERGY DENSITY NA-S BATTERY. BUT MORE INNOVATIVE APPROACHES ARE NEEDED FOR MINIATURE SOLID STATE CHEMICAL SENSORS AND BATTERIES AS WELL AS FOR MODERATE-TEMPERATURE FUEL CELLS. THE AUTHOR REVIEWS THE PROGRESS THAT HAS BEEN ACHIEVED IN PREPARING THIN FILMS OF SOLID ELECTROLYTES BY REACTIVE SPUTTERING AND CHEMICAL DEPOSITION.
Desc.: FUEL CELLS; SECONDARY CELLS; ELECTRIC SENSING DEVICES; SUPERIONIC CONDUCTING MATERIALS; CHEMICAL VAPOUR DEPOSITION; REACTIVE SPUTTERING; SINTERING
Ident.: SOLID ELECTROLYTE COATINGS; IONIC CONDUCTIVITY; PRESSING; ELECTROCHEMICAL DEVICES; CHARACTERISTICS; CHEMICAL STABILITY; IONIC SPECIFICITY; HIGH ENERGY DENSITY BATTERIES; SOLID STATE BATTERIES; CHEMICAL SENSORS; FUEL CELLS; SOLID ELECTROLYTE FABRICATION; SINTERING; NA-S BATTERY ; REACTIVE SPUTTERING; CHEMICAL DEPOSITION
Class Codes: A8630D; A8115H; A8115; B8410; B0520F

Y012013 133 
796873 A82009414
MECHANICAL BEHAVIOUR OF REACTION-BONDED SILICON NITRIDE UNDER VARIOUS THERMAL AND MECHANICAL CONDITIONS
PORZ, F.; GRATHWOHL, G.; THUMMLER, F.
INST. FUR WERKSTOFFKUNDE II, UNIV. OF KARLSRUHE, KARLSRUHE, GERMANY
PROC. BR. CERAM. SOC. (GB) NO.31 157-68 JUNE 1981 CODEN: PBRCAR
SPECIAL CERAMICS 7 15-18 DEC. 1980 LONDON, ENGLAND
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (10 Refs)
THE MECHANICAL PROPERTIES OF VARIOUS RBSN MATERIALS HAVE BEEN STUDIED, WITH PARTICULAR EMPHASIS ON SERVICE-LIFE PROBLEMS. TIME-DEPENDENT STRENGTH EFFECTS WERE MEASURED AT ROOM TEMPERATURE AND AT 1260 DEGREESC GIVING N VALUES OF 50 AND 43 RESPECTIVELY. CYCLIC LOADING WITH 1 HZ FREQUENCY AT ROOM TEMPERATURE WAS FOUND TO REDUCE THE LIFETIME COMPARED TO STATIC LOADING CONDITIONS. HIGH-TEMPERATURE STATIC FATIGUE AND CREEP EXPERIMENTS REVEALED THE IMPORTANT ROLE OF ALKALINE-EARTH IMPURITIES ON MECHANICAL PROPERTIES. SEVERE ROOM-TEMPERATURE STRENGTH DEGRADATION WAS OBSERVED AFTER CYCLIC OXIDATION BETWEEN RESULTS ARE DISCUSSED IN TERMS OF THE MICROSTRUCTURE AND THE IMPURITY CONTENT.
Desc.: SILICON COMPOUNDS; REFRACTORIES; FATIGUE; CREEP; CRYSTAL MICROSTRUCTURE
Ident.: SIN; REACTION-BONDED; MECHANICAL PROPERTIES; STRENGTH EFFECTS; LOADING; FATIGUE; CREEP; STRENGTH DEGRADATION; CYCLIC OXIDATION
Class Codes: A8140N; A6220M; A8140L; A6220H

Y012013 134 
796291 A82008682
MICROSTRUCTURAL EFFECTS ON THE THERMAL DIFFUSIVITY OF REACTION-BONDED SILICON NITRIDE
ZIEGLER, G.; ZIEGLER, R.
DFVLR, COLOGNE, GERMANY
PROC. BR. CERAM. SOC. (GB) NO.31 133-44 JUNE 1981 CODEN: PBRCAR
SPECIAL CERAMICS 7 15-18 DEC. 1980 LONDON, ENGLAND
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (17 Refs)
THE ROOM-TEMPERATURE THERMAL DIFFUSIVITY OF A NUMBER OF WELL-CHARACTERIZED COMMERCIAL GRADES OF REACTION-BONDED SILICON NITRIDE, PREPARED BY VARIOUS MANUFACTURING TECHNIQUES, WAS MEASURED. THE CORRELATION BETWEEN THERMAL DIFFUSIVITY DATA AND CHANGES IN MICROSTRUCTURE WAS INVESTIGATED. THE WIDE VARIATION OF THERMAL DIFFUSIVITY DATA OF THE COMMERCIAL GRADES, BETWEEN 0.023 AND 0.11 CM/SUP 2/ S/SUP -1/, COULD NOT BE RELATED TO SINGLE MICROSTRUCTURAL PARAMETERS. THIS IS MOST LIKELY DUE TO A SUPERPOSITION OF SEVERAL MICROSTRUCTURAL EFFECTS. A GENERAL TENDENCY OF INCREASING THERMAL DIFFUSIVITY WITH AN INCREASE IN DENSITY WAS OBSERVED. FOR THE DENSITY RANGE OF 68 TO 83PERCENT OF THEORETICAL DENSITY, HOWEVER, THERMAL DIFFUSIVITY SHOULD MAINLY BE CONTROLLED BY OTHER MICROSTRUCTURAL CHARACTERISTICS. THIS WAS CONFIRMED BY ADDITIONAL MEASUREMENTS ON VARIOUS LABORATORY GRADES, IN WHICH THE SIZE OF THE MACROPORES, THE AMOUNT AND THE MORPHOLOGY OF THE ALPHA-PHASE WERE SYSTEMATICALLY HANGED. AT CONSTANT BULK DENSITY, THE SIZE OF THE EQUI-AXED MACROPORES HAS NO EFFECT ON THERMAL PROPERTIES.
Desc.: THERMAL DIFFUSIVITY; SILICON COMPOUNDS; REFRACTORIES; CRYSTAL MICROSTRUCTURE
Ident.: REACTION BONDED SIN; THERMAL DIFFUSIVITY; MICROSTRUCTURE; MACROPORES; BULK DENSITY
Class Codes: A6670

Y012013 135 
778899 A81105453
EFFECT OF IMPURITY DOPING ON A REACTION-BONDED SILICON CARBIDE
NORTH, B.; GILCHRIST, K.E.
SPRINGFIELDS NUCLEAR POWER DEV. LABS., UKAEA, SALWICK, PRESTON, ENGLAND
AM. CERAM. SOC. BULL. (USA) VOL.60, NO.5 549-54 MAY 1981 CODEN: ACSBA7
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (16 Refs)
REACTION-BONDED SILICON CARBIDE IS USED IN APPLICATIONS RANGING FROM MECHANICAL SEALS TO GAS-TURBINE COMPONENTS. THEREFORE, THE ABILITY TO TAILOR PROPERTIES SUCH AS THERMAL AND ELECTRICAL CONDUCTIVITIES TO SPECIFIC APPLICATIONS WOULD BE ADVANTAGEOUS. AT ROOM TEMPERATURE, BORON AND ALUMINUM ADDITIONS REDUCE THERMAL CONDUCTIVITY SIGNIFICANTLY. ON THE OTHER HAND, BORON CAN INCREASE THE ELECTRICAL CONDUCTIVITY BY A FACTOR OF 100 (PRIMARILY BY AFFECTING THE FREE-SILICON PHASE) AND ANTIMONY CAN REDUCE IT BY A FACTOR OF 10. AT HIGH TEMPERATURE, THE ELECTRICAL AND THERMAL CONDUCTIVITIES OF THE VARIOUSLY DOPED MATERIALS CONVERGE TO THE UNDOPED VALUES.
Desc.: SILICON COMPOUNDS; REFRACTORIES; SPECIFIC HEAT OF SOLIDS; ELECTRICAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS AND INSULATORS; THERMAL CONDUCTIVITY OF SOLIDS; IMPURITIES
Ident.: MECHANICAL SEALS; GAS-TURBINE COMPONENTS; THERMAL CONDUCTIVITY; ELECTRICAL CONDUCTIVITY; REACTION BONDED SIC; IMPURITY DOPING ; B ADDITIONS; AL ADDITIONS; N DOPING
Class Codes: A6670; A7220F; A6540

Y012013 136 
767197 A81097978
TRANSPARENT GLASS-CERAMICS AND INTERACTION WITH ALKALI METAL VAPOURS
LAU, J.
UNIV. WARWICK, COVENTRY, ENGLAND
Treatment: EXPERIMENTAL
Doc. Type: DISSERTATION
Lang.: Eng.
INVESTIGATES THE FUNDAMENTAL PROCESSES INVOLVED WHEN A GLASS IS EXPOSED TO SODIUM VAPOUR, AND EXAMINES THE DIFFERENT WAYS OF IMPROVING THE RESISTANCE TOWARDS SODIUM ATTACK. WITH REGARD TO THE INTERACTION OF GLASSES WITH SODIUM, THE SILICATES WERE STUDIED IN MOST DETAIL. THE DISCOLOURATION OF THE SILICATE GLASSES BY SODIUM WAS TREATED AS A SURFACE PHENOMENON AND TECHNIQUES SUCH AS ESCA, IR?S AND ESR WERE USED TO INVESTIGATE THE INTERACTION. THE RESULTS FROM THESE VARIOUS TECHNIQUES ALL POINT TO THE SAME CONCLUSION, THAT THE MECHANISM OF SODIUM ATTACK IS THE PROGRESSIVE BREAKING OF SI-O BONDS TO FORM S?-O/SUP -/ BONDS. THE REACTION BETWEEN BORATE GLASSES AND SODIUM SHOWED CERTAIN SIMILARITIES WITH THE SILICATES. IT WAS FOUND THAT THE RESISTANCE TOWARDS SODIUM ATTACK WAS ONLY MARGINALLY IMPROVED BY CRYSTALLISING THE GLASSES IN BULK. HOWEVER, SUBSTANTIAL IMPROVEMENTS WERE OBSERVED BY SURFACE CRYSTALLISATION.
Desc.: GLASS; CORROSION; CRYSTALLISATION
Ident.: DISCOLOURATION; SURFACE PHENOMENON; ESCA; IRRS; ESR; SURFACE CRYSTALLISATION; TRANSPARENT GLASS CERAMICS; ALKALI METAL VAPOURS; NA VAPOUR; CORROSION RESISTANCE; BULK CRYSTALLISATION
Class Codes: A8160F

Y012013 137 
758?69 A81087382, B81046082
LOW TEMPERATURE PHOTO-CVD SILICON NITRIDE: PROPERTIES AND APPLICATIONS
PETERS, J.W.; GEBHART, F.L.; HALL, T.C.
HUGHES AIRCRAFT CO., CULVER CITY, CA, USA
SOLID STATE TECHNOL. (USA) VOL.23, NO.9  121-6 SEPT. 1980 CODEN: SSTEAP
Treatment: APPLIC; NEW DEVELOPMENTS; EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (7 Refs)
A NEW PHOTOCHEMICAL PROCESS HAS BEEN DEVELOPED FOR THE DEPOSITION OF DENSE, CONFORMAL COATINGS OF SILICON NITRIDE (PHOTONITRIDE) ON MICRO-ELECTRONIC DEVICES AT TEMPERATURES AS LOW AS 100 DEGREESC. THIS PROCESS HAS THE ADVANTAGE, FOR PLASMA AND SPUTTER DEPOSITION PROCESSES, OF BEING FREE OF BROADBAND ELECTROMAGNETIC RADIATION AND CHARGED PARTICLE EFFECTS. DATA IS PRESENTED ON THE PHYSICAL, ELECTRICAL AND MECHANICAL PROPERTIES OF PHOTONITRIDE FILMS ON SILICON OR ON GLASS SUBSTRATES WHICH SHOW THIS MATERIAL TO BE COMPARABLE WITH TYPICAL PLASMA NITRIDE FILMS. A REACTOR IS DESCRIBED WHICH WAS EMPLOYED TO APPLY A CONFORMAL COATING OF PHOTONITRIDE OVER FULLY WIRE BONDED LEAD-FRAME ASSEMBLIES PRIOR TO ENCAPSULATION OF THESE ASSEMBLIES IN PLASTIC. THE ULTIMATE OBJECTIVE OF THIS PACKAGING APPROACH IS THE DEVELOPMENT OF A MILITARY QUALIFIED HIGH RELIABILITY PLASTIC ENCAPSULATED DEVICE. THE RESULTS OF THE STUDY SHOW THAT PHOTONITRIDE PASSIVATION IS COMPATIBLE WITH ALL WIRE BONDED LEAD-FRAME ASSEMBLIES, WITH OR WITHOUT INITIAL CHIP SILICON NITRIDE PASSIVATION.
Desc.: ENCAPSULATION; PASSIVATION; CHEMICAL VAPOUR DEPOSITION; PHOTOCHEMISTRY; SEMICONDUCTOR TECHNOLOGY; SILICON COMPOUNDS
Ident.: APPLICATIONS; PHOTOCHEMICAL PROCESS; CONFORMAL COATINGS; MECHANICAL PROPERTIES; PHOTO?SULATED DEVICE; PHOTONITRIDE PASSIVATION; LOW TEMPERATURE PHOTO-CVD SI/SUB 3/N/SUB 4/; CONFORMAL COATING OVER FULLY WIRE BONDED PHYSICAL PROPERTIES; LEAD FRAME ASSEMBLIES; ELECTRICAL PROPERTIES; IC ENCAPSULATION PACKAGING
Class Codes: A8115H; A8250; B2550E; B0170J; B0520F

Y012013 138 
756251 A81093383
CHEMICAL INFORMATION FROM AUGER ELECTRON SPECTROSCOPY
MADDEN, H.H.
SANDIA NAT. LABS., ALBUQUERQUE, NM, USA
J. VAC. SCI. AND TECHNOL. (USA) VOL.18, NO.3 677-89 APRIL 1981 CODEN: JVSTAL
PROCEEDINGS OF THE 27TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY
13-17 OCT. 1980 DETROIT, MI, USA
Treatment: GENERAL, REVIEW; THEORETICAL; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (126 Refs)
THE NATURE OF CHEMICAL INFORMATION IN AUGER ELECTRON SPECTROSCOPY (AES) DATA IS REVIEWED WITH SPECIAL EMPHASIS ON DATA FROM SOLID SURFACE SYSTEMS. TWO STRATEGIES ARE MOST FREQUENTLY USED TO EXTRACT THIS INFORMATION: (I) MEASURING AND ANALYZING ENERGY (CHEMICAL) SHIFTS IN AUGER PEAKS; AND (II) MAKING USE OF THE SHAPES OF AUGER SIGNALS TO DETERMINE THE CHEMICAL ENVIRONMENT AT THE SITE OF THE INITIAL CORE HOLE. CHEMICAL SHIFT DATA ARE PRIMARILY ILLUSTRATED BY HIGHLIGHTING THE INTERACTION OF OXYGEN WITH SOLIDS; AND ANALYSES OF THESE DATA BASED ON CORE-LEVEL BINDING-ENERGY SHIFTS, RELAXATION, AND HOLE-HOLE INTERACTIONS ARE OUTLINED AND DISCUSSED. AUGER TRANSITIONS THAT INVOLVE VALENCE ELECTRONS ARE USUALLY THOSE FOR WHICH LINESHAPES ARE TAKEN AS INDICATIONS OF THE LOCAL CHEMISTRY AT THE INITIAL CORE-HOLE SITE. ATTEMPTS AT EXTRACTING VALENCE BAND DENSITY-OF-STATES INFORMATION FROM LINESHAPES ARE PROVING SUCCESSFUL AND THIS APPROACH TO THE SURFACE CHEMICAL INFORMATION IN AES IS ILLUSTRATED WITH THE AID OF EXAMPLES DEALING WITH THE INTERACTION OF SILICON WITH HYDROGEN AND WITH OXYGEN. THE USE OF THE AES LINESHAPES SIMPLY AS 'FINGERPRINTS' OF THE CORE HOLE-SITE CHEMISTRY IS EXAMINED AND ILLUSTRATED BY EXAMPLES WHICH INCLUDE STUDIES OF SILICON NITRIDE PROPERTIES, OF SOLID SURFACE PROPERTIES RELATED TO CATALYTIC REACTIONS, AND OF PASSIVE FILMS ON IRON. AUGER DECAY ACTIVATED DESORPTION PROCESSES ARE BRIEFLY EXAMINED AND FOUND TO PROMISE NEW AND UNIQUE CHEMICAL INFORMATION WHEN COMBINED WITH CONVENTIONAL AES. SOME GAS PHASE AES STUDIES ARE ALSO BRIEFLY REVIEWED.
Desc.: AUGER EFFECT; OXIDATION; SORPTION; BINDING ENERGY; SPECTROCHEMICAL ANALYSIS; REVIEWS; SURFACE ELECTRON STATES
Ident.: AUGER ELECTRON SPECTROSCOPY; CHEMICAL INFORMATION; SOLID SURFACE SYSTEMS; INITIAL CORE HOLE; CORE-LEVEL BINDING-ENERGY SHIFTS; HOLE-HOLE INTERACTIONS; VALENCE ELECTRONS; VALENCE BAND DENSITY-OF-STATES; AES LINESHAPES; CORE HOLE-SITE CHEMISTRY; CATALYTIC REACTIONS; DESORPTION PROCESSES; FE; SI; CHEMICAL SHIFTS; O/SUB 2/ INTERACTIONS
Class Codes: A8280P; A6845B; A8160; A7920F; A7320; A0130R

Y012013 139 
748740 A81084639
FISSION-PRODUCT BEHAVIOUR IN IRRADIATED HTR FISSILE PARTICLES AT HIGH TEMPERATURES
BENZ, R.; FORTHMANN, R.; GRUBMEIER, H.; NAOUMIDIS, A.
KERNFORSCHUNGSANLAGE JULICH GMBH, JULICH, GERMANY
THERMODYNAMICS OF NUCLEAR MATERIALS 1979. PROCEEDINGS OF AN INTERNATIONAL SYMPOSIUM ON THERMODYNAMICS OF NUCLEAR MATERIALS 565-86, VOL.1 1980
29 JAN. - 2 FEB. 1979 JULICH, GERMANY
Publ: IAEA, VIENNA, AUSTRIA
2 VOL. (587+427) pp.
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (7 Refs)
THE CHEMICAL STATE AND TRANSPORT BEHAVIOUR OF SOLID FISSION PRODUCTS IN IRRADIATED FISSILE COATED PARTICLES WITH VERY HIGH BURN-UPS (=70PERCENT FIMA) WERE INVESTIGATED BY MEANS OF ELECTRON MICROPROBE ANALYSIS AS A FUNCTION OF THE KERNEL COMPOSITION. UO/SUB 2/, UC/SUB 2/, UO/SUB 2/+10PERCENT UC/SUB 2/ KERNELS WERE USED. IN UO/SUB 2/ KERNELS THE FISSION PRODUCTS MOLYBDENUM, TECHNETIUM, RUTHENIUM, RHODIUM AND PALLADIUM FORM METALLIC INCLUSIONS CONSISTING OF TWO PHASES WHICH CONTAIN VERY DIFFERENT AMOUNTS OF MOLYBDENUM. IN UC/SUB 2/ KERNELS, AS WELL AS IN UO/SUB 2/-UC/SUB 2/ KERNELS, THESE FISSION PRODUCTS FORM COMPLEX CARBIDES WHICH ALSO CONTAIN URANIUM. THE RARE-EARTH FISSION PRODUCTS EXIST IN THE FORM OF OXIDES IN BOTH UO/SUB 2/ AND UO/SUB 2/-UC/SUB 2/ KERNELS, WHEREAS THE ALKALINE EARTHS FORM CARBIDES, EVEN IN UO/SUB 2/-UC/SUB 2/ KERNELS. CORE HEAT-UP SIMULATION EXPERIMENTS USING UNIRRADIATED PARTICLES WITH AND WITHOUT ADDITIONS OF ARTIFICIAL FISSION PRODUCTS FOR SIMULATION OF A HIGH BURN-UP SHOWED THAT CARBON MONOXIDE PERMEATION THROUGH THE COATING CONTROLS THE FAILURE RATE OF OXIDE PARTICLES AT VERY HIGH TEMPERATURES AND THAT THE MIGRATION OF METALLIC FISSION PRODUCTS CAUSES CORROSION OF THE SILICON CARBIDE LAYER.
Desc.: FISSION REACTOR FUEL; FISSION REACTOR OPERATION; FISSION PRODUCTS; URANIUM COMPOUNDS
Ident.: CHEMICAL STATE; TRANSPORT BEHAVIOUR; SOLID FISSION PRODUCTS IRRADIATED FISSILE COATED PARTICLES; VERY HIGH BURN-UPS; ELECTRON MICROPROBE ANALYSIS; UO/SUB 2/; UC/SUB 2/; UO/SUB 2/+10PERCENT UC/SUB 2/; METALLIC INCLUSIONS; FAILURE RATE; CORROSION; HTR FISSILE PARTICLES; HIGH TEMPERATURES; CORE HEAT UP SIMULATION
Class Codes: A2840G; A28?5C

Y012013 140 
743929 A81082527
SPUTTERING OF SILICON CARBIDE COATINGS BY LOW-ENERGY HYDROGEN IONS
SONE, K.; SAIDOH, M.; NAKAMURA, K.; YAMADA, R.; MURAKAMI, Y.; SHIKAMA, T. ; FUKUTOMI, M.; KITAJIMA, M.; OKADA, M.
JAERI, BARAKI-KEN, JAPAN;
J. NUCL. MATER. (NETHERLANDS) VOL.98, NO.3 270-8 JUNE 1981 CODEN: JNUMAM
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (12 Refs)
VARIOUS TYPES OF SILICON CARBIDE COATINGS MADE BY REACTIVE ION-PLATING HAVE BEEN BOMBARDED WITH A 3.0 KEV H/SUB 3//SUP +/ ION BEAM AT TEMPERATURES AROUND 500 DEGREESC. THE SPUTTERING YIELD IN STOICHIOMETRIC SAMPLES (I.E. SI: C=1: 1) AT 500 DEGREESC WAS 1.15*10/SUP -/2 ATOMS/H/SUP +/. AS THE STOICHIOMETRY DEVIATES FROM THIS POINT, THE SPUTTERING YIELD HAS LARGER VALUES. THE TEMPERATURE DEPENDENCE OF THE SPUTTERING YIELD IN STOICHIOMETRIC SAMPLES WAS NEGLIGIBLE BELOW 600 DEGREESC. NO SURFACE TOPOGRAPHY CHANGES OCCURRED IN STOICHIOMETRIC SAMPLES EVEN AT A HIGH FLUENCE OF 2*10/SUP 20/ H/SUP +//CM/SUP 2/, WHILE SEVERE EROSION TOOK PLACE IN NON-STOICHIOMETRIC SAMPLES. BY AUGER ELECTRON SPECTROSCOPY (AES), CARBON EXISTS ON THE SURFACE IN THE FORM OF CARBIDE IN STOICHIOMETRIC SIC BEFORE AND AFTER BOMBARDMENT, WHILE IT EXISTS IN THE FORM OF GRAPHITE IN CARBON RICH SAMPLES, WHICH SUGGESTS THAT THE BOUND STATE OF CARBON IN THE FORM OF CARBIDE SHOULD CORRESPONE TO THE LOW SPUTTERING YIELD IN STOICHIOMETRIC SIC COATINGS. THE SURFACE STOICHIOMETRY CHANGES DUE TO HYDROGEN BOMBARDMENT WERE OBSERVED BY AES, WHERE THE CARBON POPULATION INCREASES IN STOICHIOMETRIC SIC, WHILE IN DECREASES IN CARBON RICH SAMPLES, WHICH WAS SUPPORTED AS WELL BY THE REULTS FROM ELECTRON PROBE X-RAY MICROANALYSIS.
Desc.: SILICON COMPOUNDS; REFRACTORIES; AUGER EFFECT; ELECTRON PROBE ANALYSIS; REACTIVE SPUTTERING; SURFACE STRUCTURE; ION PLATING; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; PROTECTIVE COATINGS
Ident.: REACTIVE ION-PLATING; 3.0 KEV H/SUB 3//SUP +/ ION BEAM; SPUTTERING YIELD; STOICHIOMETRY; SURFACE TOPOGRAPHY; AUGER ELECTRON SPECTROSCOPY; SURFACE STOICHIOMETRY; ELECTRON PROBE X-RAY MICROANALYSIS
Class Codes: A811?C; A6820; A8115J

Y012013 141 
738998 B81040481
EVALUATION OF POLYSILICON HARDWARE BY THE USE OF MOS CHARGE RETENTION
KULKARNI, S.B.; MONTILLO, F.J.; PISTOR, R.L.; POPONAIK, M.R.
IBM CORP., ARMONK, NY, USA
IBM TECH. DISCLOSURE BULL. (USA) VOL.23, NO.10 4496 MARCH 1981 CODEN: IBMTAA
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng.
IT IS SHOWN THAT DIFFERENCES IN CONTAMINATION LEVELS BETWEEN SUSCEPTORS USED FOR EPITAXIAL SILICON DEPOSITION MADE OF POLYSILICON OR SILICON CARBIDE COATED GRAPHITE CAN BE MEASURED BY A MOS CHARGE RETENTION TECHNIQUE. THE SPEED AT WHICH THE CAPACITANCE RISES TO ITS INVERSION VALUE AFTER BEING PULSE FROM ACCUMULATION INTO DEEP DEPLETION IS A MEASURE OF THE MINORITY CARRIER GENERATION IN SILICON AND IS RELATED TO THE DEFECT LEVEL IN THE SUBSTRATES. THIS TECHNIQUE HAS BEEN FOUND TO BE MORE SENSITIVE THAN SIMS OR AUGER SPECTROSCOPY.
Desc.: SILICON; ELEMENTAL SEMICONDUCTORS; EPITAXIAL GROWTH; SEMICONDUCTOR GROWTH; MATERIALS TESTING; IMPURITIES
Ident.: EPITAXIAL SILICON DEPOSITION; POLYSILICON; MOS CHARGE RETENTION TECHNIQUE; MATERIALS TESTING; POLYCRYSTALLINE SI; SEMICONDUCTOR GROWTH; SIC COATED GRAPHITE
Class Codes: B2550; B0510D; B0590; B2520C

Y012013 142 
711400 A81060984
ELECTRICAL CONDUCTION IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS AT MEDIUM FIELD STRENGTHS
SCHALACH, D.; SCHARMANN, A.; WEBER, H.
PHYS. INST., JUSTUS-LIEBIG-UNIV., GIESSEN, GERMANY
PHYS. STATUS SOLIDI A (GERMANY) VOL.64, NO.1 159-67 16 MARCH 1981 CODEN: PSSABA
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (18 Refs)
SILICON NITRIDE MIM DEVICES ARE DEPOSITED BY RF REACTIVE SPUTTERING FROM A SILICON TARGET. THE QUALITY OF THE FILMS IS CONTROLLED BY EXAMINATION OF OPTICAL ABSORPTION, AUGER ELECTRON SPECTRA, X-RAY DIFFRACTION, AND SCANNING ELECTRON MICROGRAPHS. MEASUREMENTS OF ELECTRIC CURRENTS ARE PERFORMED AT FIELD STRENGTHS BETWEEN 5*10/SUP 6/ AND 1*10/SUP 8/ V/M AND IN THE TEMPERATURE RANGE BETWEEN LNT AND 400K. IT IS SHOWN THAT AN INTERPRETATION OF THE EXPERIMENTAL RESULTS IS POSSIBLE IN TERMS OF A CONTINUOUS DENSITY OF LOCALIZED STATES IN THE NITRIDE MOBILITY GAP. AT LOW TEMPERATURES THERE IS EVIDENCE FOR THE OCCURRENCE OF VARIABLE RANGE HOPPING.
Desc.: SILICON COMPOUNDS; INSULATING THIN FILMS; SPUTTERED COATINGS ; ELECTRONIC CONDUCTION IN INSULATING THIN FILMS; VISIBLE AND ULTRAVIOLET SPECTRA OF INORGANIC SOLIDS; AUGER EFFECT; METAL-INSULATOR METAL STRUCTURES ; LOCALISED ELECTRON STATES; IMPURITY AND DEFECT ABSORPTION SPECTRA OF INORGANIC SOLIDS
Ident.: MIM DEVICES; RF REACTIVE SPUTTERING; OPTICAL ABSORPTION; AUGER ELECTRON SPECTRA; X-RAY DIFFRACTION; SCANNING ELECTRON MICROGRAPHS;  ELECTRIC CURRENTS; LOCALIZED STATES; MOBILITY GAP; VARIABLE RANGE HOPPING; SI/SUB 3/N/SUB 4/ FILMS; ELECTRICAL CONDUCTIVITY
Class Codes: A7360H; A7865J; A7840H; A7850E; A7340R; A7220

Y012013 143 
705584 A81053638, B81031480
COMBUSTION PERFORMANCE OF CVD SILICON CARBIDE THERMIONIC DIODES
GOODALE, D.B.; REAGAN, P.; MISOLCZY, G.; LIEB, D.; HUFFMAN, F.N.
THERMO ELECTRON CORP., WALTHAM, MA, USA
Sponsor: ASME; AIAA; IEEE; ET AL
ENERGY TO THE 21ST CENTURY. PROCEEDINGS OF THE 15TH INTERSOCIETY ENERGY CONVERSION ENGINEERING CONF. 2095-7 1980
18-22 AUG. 1980 SEATTLE, WA, USA
Publ: AIAA, NEW YORK, USA
3 VOL. XXII+2669 pp.
Treatment: PRACTICAL; EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng.
MANY TERRESTRIAL APPLICATIONS FOR THERMIONIC ENERGY CONVERSION REQUIRE THAT THE ELECTRODES BE PROTECTED FROM A COMBUSTION ATMOSPHERE. SILICON CARBIDE FULFILLS THE REQUIREMENTS FOR SUCH A HOT SHELL AND HAS THE FOLLOWING PROPERTIES: HIGHLY RESISTANT TO AN OXIZIZING ATMOSPHERE, VACUUM TIGHT, STRONG AT HIGH TEMPERATURE, REASONABLE THERMAL CONDUCTIVITY, INEXPENSIVE, AND SIMPLE TO FABRICATE. COMPOSITE HOT SHELLS COMBINE A PROTECTIVE SHELL AND THE EMITTER SURFACE INTO ONE UNIT. THE COMPOSITE SHELL CONSISTS OF LAYERS MADE FROM THREE MATERIALS: SILICON CARBIDE, GRAPHITE, AND TUNGSTEN. THE GRAPHITE FORMS A MECHANICAL AND CHEMICAL BARRIER BETWEEN THE SILICON CARBIDE HOT SHELL AND THE TUNGSTEN EMITTER. THREE CONVERTERS UTILIZING COMPOSITE SHELLS HAVE BEEN BUILT AND TESTED IN A FLAME-FIRED FURNACE. ONE CONVERTER OPERATED FOR MORE THAN 5000 HOURS AT AN AVERAGE EMITTER TEMPERATURE OF 1630K. A SECOND CONVERTER OPERATED FOR 3000 HOURS AT THE SAME EMITTER TEMPERATURE. ANALYSES OF CHEMICAL AND PHYSICAL PROPERTIES OF THE COMPOSITE SHELL WERE MADE BEFORE AND AFTER THE 5000 HOUR LIFE TEST. NO INTERACTIONS BETWEEN THE MATERIALS OF THE COMPOSITE SHELL WERE EVIDENT.
Desc.: THERMIONIC CONVERSION; SILICON COMPOUNDS; CARBON COMPOUNDS; CHEMICAL VAPOUR DEPOSITION; COMBUSTION
Ident.: THERMIONIC DIODES; THERMIONIC ENERGY CONVERSION; ELECTRODES HOT SHELL; PROTECTIVE SHELL; EMITTER; COMPOSITE SHELL; GRAPHITE; CONVERTERS ; 5000 HOURS; 1630K; PHYSICAL PROPERTIES; LIFE TEST; COMBUSTION PERFORMANCE ; CHEMICALLY VAPOUR DEPOSITED; SIC; W; CHEMICAL PROPERTIES
Class Codes: A8630N; A8240P; B8460

Y012013 144 
701170 A81057440
OBTAINING TRANSPARENT CERAMICS FROM YTTRIUM OXIDE BY THE COMBINED PRECIPITATION METHOD
DUKIN, E.S.; GLAZACHEV, V.S.
D.I. MENDELEEV INST. OF CHEM. TECHNOL., MOSCOW, USSR
STEKLO AND KERAM. (USSR) VOL.37, NO.1 16-18 JAN. 1980 CODEN: STKRAQ
Trans in: GLASS AND CERAM. (USA) VOL.37, NO.1-2 28-32 JAN.-FEB. 1980 CODEN: GLCEAV
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (3 Refs)
GIVES THE RESULTS OF A STUDY IN THE EFFECT OF SINTERING OF CERTAIN ADDITIVES (HAFNIUM AND ZIRCONIUM OXIDES) INCORPORATED IN THE YTTRIUM OXIDE BY THE COMBINED PRECIPITATION OF OXALATES. THE RAW MATERIALS WERE INDUSTRIAL AQUEOUS 4.5PERCENT SOLUTIONS OF YTTRIUM CHLORIDE, HAFNIUM NITRATE, AND ZIRCONIUM NITRATE 'PURITY' GRADES; OXALIC ACID 'CHEMICAL PURITY' GRADE WAS USED AS THE PRECIPITANT. THE HAFNIUM AND ZIRCONIUM SALTS WERE DISSOLVED IN WATER AND CAREFULLY MIXED WITH THE SOLUTION OF YTTRIUM CHLORIDE IN THE RATIOS REQUIRED TO PRODUCE 6PERCENT HFO/SUB 2/ AND 10PERCENT ZRO/SUB 2/ AS THE ADDED AMOUNTS.
Desc.: YTTRIUM COMPOUNDS; CERAMICS; TRANSPARENCY; SINTERING; PRECIPITATION (PHYSICAL CHEMISTRY); HAFNIUM COMPOUNDS; ZIRCONIUM COMPOUNDS
Ident.: TRANSPARENT CERAMICS; SINTERING; COMBINED PRECIPITATION OF OXALATES; Y/SUB 2/O/SUB 3/ BASED CERAMICS; HFO/SUB 2/ ADDITIVE; ZRO/SUB 2/ ADDITIVE
Class Codes: A8120L; A8140?; A7820D

Y012013 145 
701168 A81057438
SINTERING AND PROPERTIES OF SILICON NITRIDE CONTAINING Y/SUB 2/O/SUB 3/ AND MGO
GIACHELLO, A.; MARTINENGO, P.C.; TOMMASINI, G.; POPPER, P.
FIAT RES. CENTER, ORBASSANO, ITALY
AM. CERAM SOC. BULL. (USA) VOL.59, NO.12 1212-15 DEC. 1980 CODEN: ACSBA7
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (11 Refs)
A POWDER MIXTURE (91 SI/SUB 3/N/SUB 4/+8 Y/SUB 2/O/SUB 3/ 1PERCENT MGO) WAS SINTERED AT 1800 DEGREESC IN NITROGEN AT ATMOSPHERIC PRESSURE TO A DENSITY OF 3.25 MG/M/SUP 3/. THE STRENGTH AT ROOM TEMPERATURE WAS 585 MPA AND AT 950 DEGREESC 560 MPA. DEVITRIFICATION OF AN AMORPHOUS PHASE INCREASED THE STRENGTH AT 1125 DEGREESC BY 44PERCENT . THE SIXTEEN PERCENT LINEAR SHRINKAGE DURING SINTERING MAKES FABRICATION OF COMPLEX SHAPES TO HIGH DIMENSIONAL ACCURACY POSSIBLE. THE PROPOSED SINTERING PROCESS OVERCOMES SOME OF THE DISADVANTAGES OF THE REACTION-SINTERING AND HOT-PRESSING PROCESSES. VARIOUS MECHANICAL AND THERMAL PROPERTIES WERE DETERMINED.
Desc.: SILICON COMPOUNDS; SINTERING; CERAMICS; YTTRIUM COMPOUNDS; MAGNESIUM COMPOUNDS; MECHANICAL STRENGTH; DENSITY OF SOLIDS
Ident.: POWDER MIXTURE; 1800DEGREES C; DENSITY; STRENGTH; AMORPHOUS PHASE; LINEAR SHRINKAGE; THERMAL PROPERTIES; SINTERING; MECHANICAL PROPERTIES; DEVITRIFICATION; SI/SUB 3/N/SUB 4/-Y/SUB 2/O/SUB 3/-MGO
Class Codes: A8120L; A8120E

Y012013 146 
700526 A81056669
EFFECT OF PHASE COMPOSITION AND MICROSTRUCTURE ON THE THERMAL DIFFUSIVITY OF SILICON NITRIDE
ZIEGLER, G.; HASSELMAN, D.P.H.
INST. FUR WERKSTOFF-FORSCHUNG, DFVLR, KOLN, GERMANY
J. MATER. SCI. (GB) VOL.16, NO.2 495-503 FEB. 1981 CODEN: JMTSAS
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (39 Refs)
THE EFFECTS OF COMPOSITIONAL AND MICROSTRUCTURAL VARIABLES AND PROCESSING CONDITIONS ON THE ROOM TEMPERATURE THERMAL DIFFUSIVITY OF HOT-PRESSED AND REACTION-SINTERED SILICON NITRIDE WERE DETERMINED. THE THERMAL DIFFUSIVITY FOR HOT-PRESSED SILICON NITRIDE INCREASES WITH BETA-CONTENT. MAXIMUM THERMAL DIFFUSIVITY IS REACHED AT ABOUT 3 WT.PERCENT MGO. THE HIGHER THERMAL DIFFUSIVITY OF THE BETA-PHASE IS ATTRIBUTED TO ITS HIGHER PURITY LEVEL AND THE LESS DISTORTED CRYSTAL STRUCTURE COMPARED TO THE ALPHA-PHASE. IN REACTION-SINTERED NITRIDE THE THERMAL DIFFUSIVITY IS STRONGLY INFLUENCED BY THE RELATIVE AMOUNT AND NEEDLE-LIKE MORPHOLOGY OF THE ALPHA-PHASE. CORRELATIONS OF THE THERMAL DIFFUSIVITY WITH MECHANICAL PROPERTIES ARE DISCUSSED.
Desc.: SILICON COMPOUNDS; REFRACTORIES; HOT PRESSING; SINTERING; THERMAL DIFFUSIVITY; PHASE EQUILIBRIUM; SCANNING ELECTRON MICROSCOPE EXAMINATION OF MATERIALS; FRACTURE TOUGHNESS; YOUNG'S MODULUS; POISSON RATIO
Ident.: PHASE COMPOSITION; MICROSTRUCTURE; THERMAL DIFFUSIVITY; PROCESSING CONDITIONS; HOT-PRESSED; REACTION-SINTERED; PURITY; NEEDLE-LIKE MORPHOLOGY; MECHANICAL PROPERTIES; SI/SUB 3/N/SUB 4/; ALPHA PHASE; BETA PHASE
Class Codes: A6670; A8130D; A8120L; A8140J; A8120E; A?140N; A6220M; A6220D

Y012013 147 
684023 A81043562
CHEMICAL STABILITY OF GLASS AND GLASS-CERAMICS
CLARK, D.E.
UNIV. OF FLORIDA, GAINESVILLE, FL, USA
TRANS. AM. NUCL. SOC. (USA) VOL.35 188-90 NOV. 1980 CODEN: TANSAO
INTERNATIONAL CONF. ON WORLD NUCLEAR ENERGY-ACCOMPLISHMENTS AND PERSPECTIVES (PAP.S IN SUMMARY FORM ONLY RECEIVED) 16-21 NOV. 1980 WASHINGTON, DC, USA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng.
THE USE OF GLASS AS A NUCLEAR WASTE ENCAPSULANT IS DESIRABLE FOR SEVERAL REASONS. FIRST, GLASS CAN INCORPORATE LARGE QUANTITIES OF FOREIGN CHEMICAL SPECIES INTO ITS STRUCTURE WITHOUT SIGNIFICANTLY ALTERING ITS PHYSICAL AND CHEMICAL PROPERTIES. SECOND, THE NECESSARY GLASS PROCESSING TECHNOLOGY REQUIRED FOR LARGE-SCALE PRODUCTION ALREADY EXISTS. THIRD, AND ALSO THE MAJOR FOCUS OF THIS PAP., IS THE CORROSION RESISTANCE EXHIBITED BY GLASSES TO A WIDE VARIETY OF ENVIRONMENTS.
Desc.: RADIOACTIVE WASTE; GLASS; CORROSION; CERAMICS
Ident.: GLASS; GLASS-CERAMICS; NUCLEAR WASTE ENCAPSULANT; CORROSION RESISTANCE; CHEMICAL STABILITY
Class Codes: A8160F; A8160D; A2845J

Y012013 148 
683717 A81043236
VARIATION OF THE SURFACE (0001) ALPHA-SIC (6H) POTENTIAL CAUSED BY ARGON ION BOMBARDMENT AT ENERGIES UP TO 1 KEV
TITOV, L.A.; ZYRKANOV, G.K.; BURKHANOV, A.G.
VESTN. LENINGR. UNIV. FIZ. AND KHIM. (USSR) NO.3 110-11 AUG. 1980 CODEN: VLUFBI
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: RUSSIAN (4 Refs)
DOSE DEPENDENCE OF THE SURFACE POTENTIAL OF SILICON CARBIDE HAS BEEN STUDIED DURING ARGON ION BOMBARDMENT.
Desc.: SILICON COMPOUNDS; ION-SURFACE IMPACT; SURFACE POTENTIAL; SURFACE STRUCTURE
Ident.: ION BOMBARDMENT; SURFACE POTENTIAL; AR/SUP +/; SIC
Class Codes: A7920N; A6820; A7320

Y012013 149 
681885 A81041217
HLW FIXATION IN SINTERED MODIFIED SYNROC-B CERAMICS: CHEMICAL STABILITY EVALUATION
SOLOMAH, A.G.; ZUMWALT, L.R.
NORTH CAROLINA STATE UNIV., RALEIGH, NC, USA
TRANS. AM. NUCL. SOC. (USA) VOL.35 191-3 NOV. 1980 CODEN: TANSAO
INTERNATIONAL CONF. ON WORLD NUCLEAR ENERGY-ACCOMPLISHMENTS AND PERSPECTIVES (PAP.S IN SUMMARY FORM ONLY RECEIVED) 16-21 NOV. 1980 WASHINGTON, DC, USA
Treatment: EXPERIMENTAL
Doc. Type: CONF. PAP.
Lang.: Eng. (6 Refs)
SINTERED MODIFIED SYNROC-B CERAMICS HLW SOLID WASTE FORMS HAVE BEEN PREPARED BY SUBSOLIDS SINTERING TECHNIQUE DEVELOPED AT NORTH CAROLINA STATE UNIVERSITY. THIS MINERAL ASSEMBLAGE WASTE FORM IS A THREE-PHASE MATRIX OF NATURALLY OCCURRING CRYSTALLINE PHASES; HOLLANDITE (BA?L/SUB 2/TI/SUB 6/O/SUB 16/), PEROVSKITE (CATIO/SUB 3/), AND ZIRCONOLITE (CAZRTI/SUB 2/O). LEACHING RESISTANCE OR THE RETENTION CAPACITY OF THE SINTERED MODIFIED SYNROC-B WASTE FORM LOADED WITH DIFFERENT AMOUNTS OF SIMULATED HLW CALCINE (PW-4B) (UP TO 15 WT.PERCENT ) HAS BEEN INVESTIGATED. USING DEIONIZED WATER (=100 DEGREESC) AND SIMULATED BRIFES, SIMILAR TO THOSE FOUND IN DEEP GEOLOGIC DISPOSAL SITES, AT THEIR BOILING TEMPERATURES (=110 DEGREESC), THE LEACHING EXPERIMENTS FOR THE SINTERED PRODUCTS HAVE BEEN CARRIED OUT.
Desc.: CERAMICS; RADIOACTIVE WASTE; DISSOLVING
Ident.: SINTERED MODIFIED SYNROC-B CERAMICS; CHEMICAL STABILITY; THREE-PHASE MATRIX; HOLLANDITE;  PEROVSKITE; CATIO/SUB 3/; ZIRCONOLITE; CAZRTI/SUB 2/O; HIGH LEVEL RADIOACTIVE WASTE; LEACHING RESISTANCE
Class Codes: A2845J; A6475; A8160D

Y012013 150 
671167 A81035413
RESISTANCE OF MATERIALS BASED ON SILICON NITRIDE TO CORROSION BY SOLUTIONS OF SOME ACIDS AND ALKALIS
POSTOGVARD, G.I.; MAKARENKO, A.E.; RYZHOVA, T.P.; OSTAPENKO, I.T.
KHARKOV PHYSICOTECH. INST., ACAD. OF SCI., KHARKOV, UKRAINIAN SSR
POROSHK. METALL. (USSR) VOL.19, NO.1 170-2 JAN. 1980 CODEN: PMANAI
Trans in: SOV. POWDER METALL. AND MET. CERAM. (USA) VOL.19, NO.1 52-4 JAN. 1980 CODEN: SPMCAV
Treatment: EXPERIMENTAL
Doc. Type: JRNL PAP.
Lang.: Eng. (4 Refs)
THE RESULTS ARE GIVEN OF AN INVESTIGATION INTO THE RESISTANCE OF HOT-PRESSED SILICON NITRIDE PARTS WITH A CAF/SUB 2/ ADDITION TO ATTACK BY SOLUTIONS OF SOME ACIDS AND ALKALIS. THE RESISTANCE OF THE SPECIMENS TO CORROSION BY AGGRESSIVE MEDIA WAS TESTED IN CONCENTRATED NITRIC ACID AT ROOM TEMPERATURE AND IN 1PERCENT AQUEOUS SOLUTION OF CAUSTIC SODA AT 100 DEGREESC. IT WAS FOUND THAT HOT-PRESSED SILICON NITRIDE PARTS OF 1.5-4PERCENT POROSITY CONTAINING A 10 WT.PERCENT ACTIVATING ADDITION OF MGO ARE RESISTANT TO CORROSION BY NITRIC ACID AT ROOM TEMPERATURE AND BY 1PERCENT NAOH SOLUTION AT 100 DEGREESC UNDER STEADY-STATE CONDITIONS. THE PRESENCE OF 1-20 WT.PERCENT CAF/SUB 2/ ADDED WITH THE AIM OF IMPROVING ANTIFRICTION PROPERTIES RESULTS IN CORROSION IN NITRIC ACID, OBEYING THE LAW M/SUP 2/=KTAU, WHERE K=5.5*10/SUP -5/ C/SUP 3/ PERCENT /SUP 2//H). THE CORROSION IS DUE TO ATTACK ON SPECIMENS BY HYDROFLUORIC ACID FORCING DURING THE REACTION BETWEEN THE CAF/SUB 2/ AND HNO/SUB 3/.
Desc.: SILICON COMPOUNDS; REFRACTORIES; CORROSION; CALCIUM COMPOUNDS
Ident.: CORROSION; CAF/SUB 2/ ADDITION; AGGRESSIVE MEDIA; ANTIFRICTION PROPERTIES; SI/SUB 3/N/SUB 4/ BASED MATERIAL; REFRACTORIES
Class Codes: A8160D