Y006006 1 
1156367 NTN85-0852
Reciprocating Crystallizer: Automatic crystallizer grows crystals from aqueous solutions (NTIS Tech Note)
National Aeronautics and Space Administration, Washington, DC.
Corp. Source Codes: 011249000
Jul. 85 1p
Write NTIS for information about Tech Notes subscriptions and back issue packages available.
Lang.: Eng.
NTIS Prices: Not available individually
Jrnl Ann.: GRAI8526
Co. of Pub.: U. S.
This citation summarizes a one-page announcement of technology available for utilization. A reciprocating crystallizer grows single glycine sulfate crystals of good quality. Crystals are grown from aqueous solutions by slow cooling of the growth solution along with forced convection to increase mass transfer. The polyhedral seed crystals are mounted on a holding rod that is rotated through a threaded drive by a reversible small 48-rpm motor. Two 250-watt immersion heaters maintain the temperature of the crystallizer water bath to an accuracy of 0.01 C. The bath temperature is monitored by thermometers. ...FOR ADDITIONAL INFORMATION: Contact NASA Technology Transfer Div., PO Box 8757 BWI Airport, MD 21240; (301) 621-0100 ext 241. Refer to MFS-25948/TN.
Desc.: *Crystal growth; *Chemical reactors
Ident.: NTN/J; NTISNTND
Sec. Head.: 20B (Physics--Crystallography); 14B (Methods and Equipment--Laboratories, Test Facilities, and Test Equipment); 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry); 46D (Physics--Solid State Physics)

Y006006 2 
1153466 DE85016247/XAB
Pittsburgh Energy Technology Center Quarterly Technical Progress Report for the Period Ending March 31, 1985
Department of Energy, Pittsburgh, PA. Pittsburgh Energy Technology Center
Corp. Source Codes: 055636003; 9512877
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/PETC/QTR-85/2
Aug. 85 150p
Lang.: Eng.
NTIS Prices: PC A07/MF A01
Jrnl Ann.: GRAI8525; NASA1000
Co. of Pub.: U. S.
In the area of Coal Preparation, the fused-salt process development research conducted by TRW shows promise in the production of clean energy from coal. Coal material balance experimentation and filtration studies were completed, and showed that concurrent leaching of coal with two weights of molten caustic produces clean coal that meets the New Source Performance Standards. This represents a significant improvement in reducing the size and complexity of the leacher. The coal products are low enough in ash and sulfur to be considered for use in power plants without scrubbers and with minimal-size precipitators, and as a potential diesel or turbine fuel. TRW also initiated bench-scale evaluations of a microwave desulfurization process designed to produce a coal with sulfur and ash reductions of 90%. Evaluation of the NOXSO Process for the simultaneous removal of SO sub 2 and NO/sub x/ continued this quarter. A thermodynamic study of the recycle of nitrogen oxides to the combustor is being done. Results using a thermodynamic model show that NO returned to the combustor will be converted to N sub 2 and O sub 2 in the combustion chamber if the thermodynamic equilibrium is reached. A promising research project to evaluate the PETC Fluidized-Bed Copper Oxide Process is currently under way. The emphasis on flue gas cleanup chemistry continues at PETC. In the area of Technical Information Management, the expert system developed at Carnegie-Mellon University (CMU) will soon be transferred to PETC's computer system. The new PERQ 2 Workstation at PETC is a self-contained computer system supporting a LISP environment used or artificial intelligence work. It will communicate with PETC's VAX computer and facilitate the transfer of the expert system developed at CMU. (ERA citation 10: 041210)
Desc.: *Acid Rain; *Boilers; *Coal Liquefaction; *Coal Liquids; *Coal Preparation; *Coal-Fired MHD Generators; *Combustion; *Fischer-Tropsch Synthesis; *Fischer-Tropsch/Mobil Process; *Flowmeters; *Flue Gas; *Fuel Slurries; *Gravimelt Process; Additives; Alcohols; Amines Ammonia; Atomization; Battelle Hydrothermal Coal Process; Biodegradation; Bottoming Cycles; Calibration; Carbon Dioxide; Carbonyls; Catalyst Supports; Catalysts; Catalytic Effects; Chemical Reactors; Chemistry; Coal; Combustors; Combination; Copper Oxides; Cyclohexane; Cyclone Separators; Data Base Management; Deashing; Desulfurization; Devolatilization; Diagnostic Techniques; Dry Scrubbers; Electrolysis; Electron Beams; Electrostatic Precipitators; Flotation; Fluid Mechanics; Fluidization; Fluidized-Bed Combustion; Fouling; Glow Discharges
Ident.: ERDA/013000; ERDA/010405; NTISDE
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control); 97K (Energy--Fuels); 97F (Energy--Fuel Conversion Processes); 71L (Materials Sciences--Materials Degradation and Fouling); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 3 
1152688 AD-A158 743/5/XAB
Zone-Melting Recrystallization of Si Films on SiO2 (Jrnl article)
Tsaur, B. Y.
Massachusetts Inst. of Tech., Lexington. Lincoln Lab.
Corp. Source Codes: 009875001; 207650
Sponsor: Electronic Systems Div., Hanscom AFB, MA.
Report No.: JA-5518; ESD-TR-85-226 1985 29p
Pub. in Silicon-on-Insulator: Its Technology and Applications, p101-128 1985.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8525
Co. of Pub.: U. S.
Contract No.: F19628-80-C-0002; 649L
Large-area, device-quality Si films on SiO2 have been prepared by zone-melting recrystallization using graphite strip heaters. A composite SiO2/Si3N4 encapsulation layer prevents agglomeration of the molten Si, insures a smooth film surface, and induces (100) texture. The recrystallized films contain widely-spaced grain boundaries, which can be eliminated by seeded growth techniques, and many sub-boundaries within each grain. Sub-boundaries can be entrained along parallel lines underneath a photolithographically defined optical absorber or reflector pattern. Extensive electrical measurements have been made on the recrystallized films. Sub-boundaries have no significant effect on MOSFET device performance, and high-yield CMOS test circuits have been made in films on 2-inch-diameter wafers. Radiation-hardened CMOS devices, lateral bipolar transistors, and dual-gate MOSFETs have been fabricated in recrystallized films.
Desc.: *Zone melting; *Recrystallization; *Thin films; *Silicon; Silicon dioxide; Grain boundaries; Defects(Materials); Topography; Reprints
Ident.: SOI(Silicon on Insulator) Substrates; Metal oxide transistors; CMOS; NTISDODXR; NTISDODAF
Sec. Head.: 20B (Physics--Crystallography); 9A (Electronics and Electrical Engineering--Components); 49H (Electrotechnology--Semiconductor Devices); 46D (Physics--Solid State Physics)

Y006006 4
1152300 AD-A158 353/3/XAB
Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures (Final rep. 1 Aug. 77-31 Mar 85)
Kroemer, H.
California Univ., Santa Barbara Dept. of Electrical and Computer Engineering.
Corp. Source Codes: 005457037; 403399
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARO-14570.5-EL; ARO-18464.8-EL 24 Jun. 85 10p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8525
Co. of Pub.: U. S.
Contract No.: DAAG29-77-C-0041; DAAG29-81-K-0143
Techniques for the molecular beam epitaxial growth of aP and GaAs on substrates were developed. The techniques rely on the total in-situ removal of all oxygen from the Si surface, to create an atomically clean Si starting surface, coupled with the use of the unusual and previously not used crystallographic (211) orientation for the Si substrate. In the case of GaP growth a third essential ingredient was the use of pure P2 vapor, generated by the high-temperature decomposition of GaP, rather than the 4 vapor generated by the evaporation of elemental phosphorus. The central problem of obtaining device-quality growth of GaAs and GaP was found to be the problem of avoiding antiphase domains (APDs) in the growing film, that is, of random domains containing opposite assignments of the lattice positions to the Ga and P atoms. On the commonly used crystallographic (100) orientation, APDs are fundamentally unavoidable. The (211) orientation was recognized to have a bond configuration at the interface such that APDs should not form. Experimental (211) growths yielded layers of high quality that were demonstrably free of APDs, as predicted. The recognition of the (211) orientation as the canonical orientation for the growth of polar compound semiconductors on non-polar elemental semiconductor substrates was a completely unexpected result of this research, and perhaps the most far-reaching one.
Desc.: *Gallium arsenides; *Epitaxial growth; *Gallium phosphides; Substrates; Semiconductors; High temperature; Molecular beams; Crystal structure; Silicon; Phosphorus; Vapors
Ident.: Superlattices; Molecular beam epitaxy; Heterostructures; NTISDODXA; NTISDODA
Sec. Head.: 20B (Physics--Crystallography); 7D (Chemistry--Physical Chemistry); 46D (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 5
1151543 N85-30922/7
Low Defect, High Purity Crystalline Layers Grown by Selective Deposition (Patent)
Morrison, A. D.; Daud, T.
National Aeronautics and Space Administration, Pasadena, CA. Pasadena Office.
Corp. Source Codes: 064668001; ND894694
Report No.: PATENT-4 522 661; PAT-APPL-6-507 624, NASA-CAE-NPO-15813-1
Filed 24 Jun. 83 patented 11 Jun. 85 6p
Supersedes PAT-APPL-6-507 624, N83-30269 (21 - 18, p 3028).
This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of patent available Commissioner of Patents, Washington, DC 20231, $1.00.
Lang.: Eng.
Doc. Type: Patent
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8524; STAR2319
Co. of Pub.: U. S.
Contract No.: NASA7-100
The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities.
Desc.: *Patents; *Crystal growth; *Masking; Purity; *Semiconductor devices; Deposition; Film thickness; Nucleation; Silicon; Substrates
Ident.: PAT-CL-148-33.2; PAT-CL-29-576E; PAT-CL-29-576W; PAT-CL-29-576J; PAT-CL-29-578; *Semiconductors; NTISG-NASA
Sec. Head.: 20B (Physics--Crystallography); 9A (Electronics and Electrical Engineering--Components; 7D (Chemistry--Physical Chemistry); 7A (Chemistry--Chemical Engineering); 46D (Physics--Solid State Physics); 49H (Electrotechnology--Semiconductor Devices); 90F (Government Inventions For Licensing--Electrotechnology); 90B (Government Inventions For Licensing--Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 6
1143348 N85-29085/6/XAB
Structure of Ion Plated Films in Relation to Coating Properties
Spalvins, T.
National Aeronautics and Space Administration, Cleveland, OH. Lewis Research Center.
Corp. Source Codes: 019039001; ND315753
Report No.: NAS 1.15: 87055; E-2599; NASA-TM-87055 1985 17p
Presented at the Appl. of Ion Plating and Ion Implantation to Mater. Conf., Atlanta, 3-5 Jun. 1985. Sponsored in part by American Society for Metals and Georgia Inst. of Technology.
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8521; STAR2318
Co. of Pub.: U. S.
Ion plating is an ion assisted or glow discharge deposition technique, where ions or energetic atoms transfer energy, momentum and charge to the substrate and the growing film in a manner which can be controlled to favorably modify surface subsurface chemistry, and microstructure. The glow discharge energizing effects from the initial nucleation stage to the final film growth are discussed. As a result, adherence, coherence, internal stresses, density and morphology of the coatings are significantly improved, over the conventional (nonion-assisted) techniques which in turn favorably affect the surface initiated failures caused by friction, wear, erosion, corrosion and fatigue. Ion plated films because of their graded coating/substrate interface, fine, uniform, densely packed film structure also induce a surface strengthening effect which improved the mechanical properties such as yield, tensile strength and fatigue life. Since a uniform, continuous film can be obtained at lower nominal film thickness, this effect is of great importance in solid film lubrication and in corrosion protection.
Desc.: *Deposition; *Glow discharges; *Ion plating; *Morphology; *Substrates; *Thin films; Coatings; Friction; Mechanical properties; Microstructure; Nucleation; Wear
Ident.: NTISNASA
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 71E (Materials Sciences--Coatings, Colorants, and Finishes)

Y006006 7
1126525 AD-A153 368/6/XAB
Photodeposition of Metal Films with Ultraviolet Laser Light (Jrnl article)
Ehrlich, D. J.; Osgood, R. M.; Deutsch, T. F.
Massachusetts Inst. of Tech., Lexington. Lincoln Lab.
Corp. Source Codes: 009875001; 207650
Sponsor: Electronic Systems Div., Hanscom AFB, MA.
Report No.: JA-5274; ESD-TR-85-051
Jun. 82 11p
Pub. in Jnl. of Vacuum Science and Technology, v21 n1 p23-32 May/Jun. 82.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8515
Co. of Pub.: U. S.
Contract No.: F1628-80-C-0002
A technique for maskless writing of metal films with submicrometer dimensions is described. An ultraviolet beam from a cw or pulsed laser is used to photodissociate an organometallic gas near a gas-solid interface. The liberated metal atoms then condense in an area of dimensions comparable to the laser spot size. Experiments which elucidate the essential physics of the process have been performed.
Desc.: Continuous wave lasers; Ultraviolet lasers; Reprints; *Metal films; Pulsed lasers; Ultraviolet radiation; Resolution; Collisions; Surface chemistry; Nucleation
Ident.: Photodeposition; NTISDODXR; NTISDODAF
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 8
1126301 AD-A153 143/3/XAB
Book of Abstracts, 1983 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (Final rep. 1 Jun. 83-31 May 84)
Pohanka, R. C.
Office of Naval Research, Arlington, VA.
Corp. Source Codes: 049037000; 265250
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARO-19852.1-PH-CF
31 May 84 179p
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI8515
Co. of Pub.: U. S.
Contract No.: MIPR ARO 116-83
Partial Contents: Electro-Optics; Ferroelectric Displays: Past, Present, Future; Ferroelectrics in Phase-Conjugate Optics and Dynamic Holography; Piezoelectrics Ferroelectric Composites; Biomedical Applications of Piezoelectric and Pyroelectric Polymers; Dielectrics (Aging); Ceramics for Microwave Dielectric Resonator; The Effects of Composition and Microstructure on Electrical Degradation in BaTiO3; Study of the Relaxation of the Permittivity in Doped and Gamma-Irradiated TGS Single Crystals; Aging Changes in Electrical and Mechanical Properties of Pb(r, Ti)O3 Family Ceramics; Polarization Reversal in CsH2PO4; Microscopic Observations of Electric Field Effect on the Nucleation of Domains Near a Ferroelectric Transition; The Mechanism of Remnant Birefrigence and the Surface Structure of Transparent Ferroelectric Ceramics.
Desc.: *Electrooptics; *Ceramic materials; *Ferroelectric materials; *Piezoelectric materials; *Symposia Microwave equipment; Aging(Materials); Barium titanates; Lead oxides; Birefrigence; Surface properties; Transparence; Biomedicine; Dielectrics; Electric fields; Display systems; Abstracts; Holography; Composite materials; Transitions; Microstructure; Dielectric properties; Relaxation; Resonators; Optics; Polarization; Polymers; Pyroelectricity
Ident.: NTISDODXA; NTISDODA
Sec. Head.: 20F (Physics--Optics); 20L (Physics--Solid-state Physics); 9A (Electronics and Electrical Engineering--Components); 7D (Chemistry--Physical Chemistry); 46C* (Physics--Optics and Lasers); 49E* (Electrotechnology--Optoelectronic Devices and Systems); 46D (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 9
1116804 DE8005481/XAB
Evidence for As Doping Effects on Resolidification Dynamics During Pulsed Laser Melting
Thompson, M. O.; Peercy, P. S.; Tsao, J. Y.
Cornell Univ., Ithaca, NY. Dept. of Materials Science.
Corp. Source Codes: 00060798; 9515443
Sponsor: Sandia National Labs., Albuquerque, NM.; Department of Energy, Washington, DC.
Report No.: SAND-84-1324C; CONF-841157-52 1984 7p
Materials Research Society annual meeting, Boston, MA, USA, 26 No 1984.
Portions are illegible in microfiche products.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8511; NSA1000
Co. of Pub.: U. S.
Contract No.: AC04-76DP00789
The effects of arsenic doping on the resolidification dynamics during pulsed melting of silicon with 694 nm laser irradiation has been studied using the transient conductance technique. At concentrations below 1 at. %, the incorporation of the As into the Si lattice results in negligible differences in the desolidification dynamics. At 7 at. % arsenic, however, the interface velocity is dramatically modified as the liquid-solid interface crosses the As containing region. These velocity changes are consistent with a reduced melting temperature in the As containing regions. For concentrations above 11 at. %, the depression in the melting temperature is sufficient to allow the surface to solidify while considerable melt remains buried within the sample. At 16 at. %, the melting temperature is sufficiently reduced to allow internal nucleation of melt prior to surface melting. 11 references and figures. (ERA citation 10: 011412)
Desc.: *Silicon; Arsenic; Cryoscopy; Doped Materials; Laser-Radiation Heating; Melting; Pulse Techniques; Solidification
Ident.: ERDA/360601; NTISDE
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 10
1116570 DE85004952/AB
Feasibility Study of Binary Solutions for Thermal Energy Storage in High and Low Temperature Applications
Grodzka, P.
Lockheed Missiles and Space Co., Inc., Huntsville, AL. Huntsville Research and Engineering Center.
Corp. Source Codes: 062511001; 9503343
Sponsor: Department of Energy, Washington, DC.
Report No.: ORNL/SUB-3-13858/1
Dec 84 55p
Portions are illegible in microfiche products. Original copy available until stock is exhausted.
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8511; NSA1000
Co. of Pub.: U. S.
Contract No.: AC05-84OR21400
Four categories of conjugating binary (CB) solutions were investigated and assessed for practical dual temperature heat storage systems. The categories were CB capable of clathration and/or monotectic reaction, closed-loop CBs, liquid or supercritical gas CBs, and high temperature CBs. CBs that undergo endothermic solution (hill-type CB behavior) at the higher temperature clathrate and/or monotectic reaction at the lower temperature appear most likely to be adaptable to practical dual temperature ES for applications such as building heating and cooling. An economic analysis of a representative CB in this category for load leveling applications indicates promise. In the high temperature range, the CB-monotectic system Na-NCl compares favorably economically with systems based on sensible and latent heat of fusion systems. Enhanced heat transfer rates because of avoidance of crystal growth on heat transfer surfaces during clathrate/monotectic or CB phase change should considerably improve these preliminary economic projections for CB systems. The study also identified the CB-clathrate/monotectic systems of propylene carbonate + water and SO sub 2 + water which may be of eventual practical interest. (ERA citation 10: 011177)
Desc.: *Heat Storage; Clathrates; Economic Analysis; Monotectics; Solutions
Ident.: ERDA/250600; NTISDE
Sec. Head.: 10C (Energy Conversion (Non-propulsive)--Energy Storage); 97O (Energy--Miscellaneous Energy Conversion and Storage)

Y006006 11
111659 DE85004857/XAB
Time-Resolved Studies of Rapid Solidification in Highly Undercooled Molten Silicon
Lowndes, D. H.; Jellison, G. E.; Wood, R. F.; Pennycook, S. J.; Carpenter, R. W.
Oak Ridge National Lab., TN.
Corp. Source Codes: 021310000; 4832000
Sponsor: Department of Energy, Washington, DC.
Report No.: CONF-84115-47
Dec 84 7p
Symposium on the scientific basis for nuclear waste management, Boston, MA, USA, 26 Nov. 1984.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8511; NSA1000
Co. of Pub.: U. S.
Contract No.: AC05-84OR21400
A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 n and 1.15 mu m) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. The time-resolved measurements provide new experimental information about the nucleation of fine-grained Si crystallites in undercooled liquid Si, at low laser energy densities E/sub l/), and about the growth of large-grained Si in the near-surface region at higher E/sub l/. Measurements with the infrared probe beam reveal the presence of a buried, propagating liquid layer at low E/sub l/. Model calculations indicate that this liquid layer is generated in part by the release of latent heat associated with the nucleation and growth process. 8 references, 4 figures. (ERA citation 10: 011406)
Desc.: *Silicon; Experimental Data; Grain Growth; Ion Implantation Laser Radiation; Nucleation; Physical Radiation Effects; Pulse Techniques; Reflectivity; Solidification; Transmission Electron Microscopy
Ident.: ERDA/360605; ERDA/360304; *Amorphous silicon; NTISDE
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 12
1116242 DE85003677/XAB
Thermodynamic and Kinetic Studies of Pulsed Laser Annealing from Transient Conductivity Measurements
Peercy, P. S.; Thompson, M. O.
Sandia National Labs., Albuquerque, NM.
Corp. Source Codes: 068123000; 9511100
Sponsor: Department of Energy, Washington, DC.
Report No.: SAND-84-1230C; CONF-841157-23 1984 25p
Symposium on the scientific basis for nuclear waste management, Boston, MA, USA, 26 Nov. 1984.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8511; NSA1000
Co. of Pub.: U. S.
Contract No.: AC04-76DP00789
Simultaneous measurements of the transient conductance and time-dependent surface reflectance of the melt and solidification dynamics produced by pulsed laser irradiation of Si are reviewed. These measurements demonstrate that the melting temperature of amorphous Si is reduced 200 +- 50Degrees K from that of crystalline Si and that explosive crystallization in amorphous Si is mediated by a thin (less than or equal to 20 nm) molten layer that propagates at approx. 15 m/sec. Studies with 3.5 nsec pulses permit an Estimate of the dependence of the solidification velocity on undercooling. Measurements of the effect of As impurities on the solidification velocity demonstrate that high As concentrations decrease the melting temperature of Si (approx. 150 degrees K for 7 at. %), which can result in surface nucleation to produce buried melts. Finally, the silicon-germanium alloy system is shown to be an ideal model system for the study of superheating and undercooling. The Si sub 50 Ge sub 50 alloy closely models amorphous Si, and measurements of layered Si-Ge alloy structures indicate superheating up to 120 degrees K without nucleation of internal melts. The change in melt velocity with superheating yields a velocity versus superheating of 17 +- 3 k/m/sec. 35 references. (ERA citation 10: 011049)
Desc.: *Silicon; Annealing; Arsenic; Crystallization; Electric Conductivity; Germanium Alloys; impurities; Ion Implantation; Kinetics; Laser-Radiation Heating; Melting; Melting Points; Phase Transformations; Pulse Techniques; Reflectivity; Silicon Alloys; Solidification; Superheating; Thermodynamic Properties
Ident.: ERDA/360101; *Laser annealing; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 7D (Chemistry--Physical Chemistry); 46D (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 13
1110548 AD-A150 075/0/XAB
Studies of Silicon-Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation (Final rept. 15 Apr. 83-30 Sept. 84)
Weaver, J. H.
Minnesota Univ., Minneapolis. Dept. of Chemical Engineering and Materials Science.
Corp. Source Codes: 012002164; 406556
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARO-20577.5-PH
29 Oct. 84 99p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8509
Co. of Pub.: U. S.
Contract No.: DAAG29-83-K-0061
The overall goal in this project was to examine the electronic and morphological interactions which occur at interfaces involving Si and metal overlayers. During the course of this project, we examined overlayers of Cr, Ti, Sm, Au, Ca, Ce, and Cu using photoelectron spectroscopy, Auger spectroscopy and LEED. A new technique involving angle-resolved Auger profiling was developed to determine the atomic density profile for interface. Its utility was demonstrated through studies of Cu/Si, Au/Si, and Ce/Si. Exhaustive use of synchrotron radiation photoemission has lead to a detailed understanding of the electronic bonding of silicides and metal/silicon interfaces. Collaborative studies with theorists gave rise to modeling of interfaces and calculation of electronic energy states for ordered silicides.
Desc.: *Nucleation; *Silicides; *Surface reactions; *Refractory metals; Atomic properties; Interfaces; Photoelectron spectra; Auger electron spectroscopy; Morphology; Electronic states; Photoelectric emission; Electron diffraction; Copper; Gold; Cerium; Radiation; Synchrotrons
Ident.: NTISDODXA; NTISDODA
Sec. Head.: 20L (Physics--Solid-state Physics); 7A (Chemistry--Chemical Engineering); 46D (Physics--Solid State Physics); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 14
1106481 N85-11958/4/XAB
High Pressure Cosmochemistry Applied to Major Planetary Interiors: Experimental Studies (Status Report)
Nicol, M. F.; Johnson, M.; Koumvakalis, A. S.
California Univ., Los Angeles.
Corp. Source Codes: 005420000; CD146017
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NAS 1.26: 174032; NASA-CR-174032 1 Nov. 84 12p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8504; STAR2302
Co. of Pub.: U. S.
Contract No.: NAGW-104
Progress is reported on a project to determine the properties and boundaries of high pressure phases of the H2-He-H2O-NH3-CH4 system that are needed to constrain theoretical models of the interiors of the major planets. This project is one of the first attempts to measure phase equilibria in binary fluid-solid systems in diamond anvil cells. Vibrational spectroscopy, direct visual observations, and X-ray diffraction crystallography of materials confined in externally heated cells are the primary experimental probes. Adiabats of these materials are also measured in order to constrain models of heat flow in these bodies and to detect phase transitions by thermal anomalies. Initial efforts involve the NH3-H2O binary. This system is especially relevant to models for surface reconstruction of the icy satellites of Jupiter and Saturn. Thermal analysis experiments were completed for the P-X space, p4GPa: 0 or = 0.50, near room temperature. The cryostat, sample handling equipment, and optics needed to extend the optical P-T-X work below room temperature was completed.
Desc.: *Binary systems (Materials); *Cosmochemistry; High pressure *Phase transformations; *Planetary composition; *Planets; Ammonia; Hydrates; Ice; Nucleation; Phase diagrams; Thermal analysis
Ident.: NTISNASA
Sec. Head.: 3B (Astronomy and Astrophysics--Astrophysics); 54C (Astronomy and Astrophysics--Astrophysics)

Y006006 15
1104041 AD-A147 812/2/XAB
Salt Action on Concrete (Special rept.)
Sayward, J. M.
Cold Regions Research and Engineering Lab., Hanover, NH.
Corp. Source Codes: 006594000; 037100
Report No.: CRREL-SR-84-25
Aug. 84 6p
Revision of a draft report dated 1977.
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8504
Co. of Pub.: U. S.
Serious deterioration of concrete bridges by deicing salts is generally ascribed to depassivation and corrosion of reinforcing steel, as growth of its corrosion products causes spalling. Here, simple evaporative tests simulated the salt weathering that slowly crumbles rocks in nature, where crystals growing from pore water fed from below stress the matrix just as do ice crystals in frost heaving soil. Like needle ice (surface frost action in soil) the salt columns exuded from concrete also lifted tiny particles, signifying crumbling. Microcracks developed in 1-3 years of after-test dry storage. In a four-month simpler repeat test with salt, such cracks developed in all six concretes tested (five dolomitic, one siliceous). The siliceous one developed eye-visible cracks in three-year storage and a visible stone chip in the short repeat test, both with sodium chloride. The siliceous concrete also cracked badly within one week with strong calcium chloride and deteriorated completely in three-year storage. It also cracked badly with dilute calcium chloride or calcium nitrate exudation in nests with seawater may signify internal reaction plugging pores with insoluble magnesium hydroxide. This suggests a hypothetical means of control by addition of Mg++ to deicers or concrete. Present results suggest that neither corrosion of steel nor the C1- ion are requisite in salt action on concrete but that salt-caused Microcracks may facilitate access of salt for cracking and also of carbon dioxide, water and salt for ultimate corrosion effects.
Desc.: *Salts; *Corrosion; *Concrete; *Microcracking; *Deicing materials; Crack propagation; Spallation; Porous materials; Crystal growth Dolomite; Magnesium; Ions; Additives; Access; Calcium compounds; Chlorides Exudation; Nitrates; Calcium compounds; Crystals; Ice; Water; Weathering; Sodium chloride; Deterioration; Frost heave; Hydroxides; Magnesium compounds
Ident.: Corrosion products; Pore water; Calcium chloride; Salt columns; Dolomitic concrete; Siliceous concrete; NTISDODXA
Sec. Head.: 13C (Mechanical, Industrial, Civil, and Marine Engineering--Construction Equipment Materials and Supplies); 50C (Civil Engineering--Construction Equipment, Materials, and Supplies); 71G (Materials Sciences--Corrosion and Corrosion Inhibition)

Y006006 16
1100665 PB85-132140/XAB
Annual Technical Report July 1, 1983-June 30, 1984, Materials Research Laboratory, The University of Chicago (Technical rept.)
Kleppa, O. J.
Chicago Univ., IL. Materials Research Lab.
Corp. Source Codes: 000917167
Sponsor: National Science Foundation, Washington, DC.
Report No.: NSF/DMR-84001
Sept. 84 91p
See also AD-A 140 898.
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8505
Co. of Pub.: U. S.
Contract No.: NSF-DMR82-16892
Progress achieved in four areas (surface sciences, disordered materials, solidification and growth, and electron microscopy) is reported for the period from July 1, 1983 through June 30, 1984. Work on the surface sciences has focused on surface diffusion, adsorption and desorption, surface phonon spectroscopy, gas-surface interactions, and two-dimensional phase transitions. Research on disordered materials has examined localization, spin glasses, amorphous semiconductor superlattices, and disorder, order, and structure in silicates. Solidification and growth studies have addressed nucleation, pattern formation, and the glass transition. It is noted that while electron microscopy is very useful in investigating topics in materials science, it does not fall directly under the three main areas of study.
Desc.: *Surfaces; *Solidification; *Crystal growth; *Electron microscopy; Nucleation; Diffusion; Desorption; Adsorption; Phase transformations; Phonons; Spectroscopy; Glass; Gases; Interactions
Ident.: *Amorphous materials; Amorphous semiconductors; Spin glass state; Superlattices; Silicates; Two dimensional; NTISNSFMR
Sec. Head.: 20B (Physics--Crystallography); 20L (Physics--Solid-state Physics); 7D (Chemistry--Physical Chemistry); 46D (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 17 
1098638 PB85-115590
Some Exact Results for a Two-Dimensional Crystal Growth Problem (Final rept.)
Dimarzio, E. A.; Guttman, C. M.
National Bureau of Standards, Washington, DC.
Corp. Source Codes: 004692000 1982 9p
Pub. in Jnl. of Crystal Growth 57, n2 p403-411 1982.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8503
Co. of Pub.: U. S.
The growth rate G(alpha 1, beta 1; alpha 2, beta 2; L) for growth perpendicular to an edge L units long is calculated as a function of the rate constants alpha 1 (attachment) and beta 1 (detachment) for nucleation along the edge and of the rate constants alpha 2 and beta 2 for lateral filling in of nucleated regions along the edge. The bistrip problem (L=2) shows 4 distinct regions of growth. The first two of these are not realizable thermodynamically but may be realizable at large supercoolings. G for arbitrary L is also obtained for certain special choices of the rate constants. Various measures of surface roughness are defined.
Desc.: *Crystal growth; Surface roughness; Reprints
Ident.: Two dimensional; NTISCOMNBS
Sec. Head.: 20B (Physics--Crystallography); 7D (Chemistry--Physical Chemistry); 46 (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 18 
1094572 DE8401669/XAB
Ion Beam and Laser Induced Surface Modifications
Appleton, B. R.
Oak Ridge National Lab., TN.
Corp. Source Codes: 021310000; 4832000
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/OR/21400-T41
Jan 84 57p
Portions are illegible in microfiche products.
Lang.: Eng.
Doc. Type: Bibliography
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8502; NSA0900
Co. of Pub.: U. S.
Contract No.: AC05-84OR21400
In this chapter the capabilities of energetic ion beam and laser processing of surfaces are reviewed. Ion implantation doping, ion beam mixing, and laser and electron beam processing techniques are capable of producing new and often unique surface properties. The inherent control of these techniques has led to significant advances in our ability to tailor the properties of solids for a wide range of technological applications. Equally important, these techniques have allowed tests of fundamental materials interactions under conditions not heretofore achievable and have resulted in increased understanding of a broad range of materials phenomena. These include new metastable phase formation, rapid nucleation and crystal growth kinetics, amorphous metals and metaglasses, supersaturated solid solutions and substitutional alloys, interface interactions, solute trapping, laser-assisted chemical modifications, and a host of others. 169 references, 5 tables. (ERA citation 09: 046187)
Desc.: *Ion Beams; *Ion Implantation; *Laser Radiation; Materials; *Surface Treatments; Bibliographies; Crystal Doping; Reviews; Surfaces; Uses
Ident.: ERDA/360106; NTISDE
Sec. Head.: 20B (Physics--Crystallography); 7D (Chemistry--Physical Chemistry); 46D (Physics--Solid State Physics); 71GE (Materials Sciences--General); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 19 
1094432 DE84016060/XAB
Origins of Structural Defects in BF sub 2+ -Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-Free Regrowth
Sands, T.; Washburn, J.; Myers, E.; Sadana, D. K.
California Univ., Berkeley. Lawrence Berkeley Lab.
Corp. Source Codes: 005029222; 9513034
Sponsor: North Carolina State Univ., Raleigh. Dept. of Materials Engineering.; Microelectronics Center of North Carolina, Research Triangle Park.; Department of Energy, Washington, DC.
Report No.: LBL-18045; CONF-840760-9
Jul. 84 21p
Ion beam modification of materials conference, Ithaca, NY, USA, 16 Jul. 1984.
Portions are illegible in microfiche products.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8502; NSA0900
Co. of Pub.: U. S.
Contract No.: AC03-76SF00098
The rapid thermal annealing behavior of BF sub 2+ -implanted silicon pre-amorphized with Si exp + and Ge exp + has been investigated with conventional and high-resolution cross-sectional transmission electron microscopy, and secondary-ion mass spectrometry. Three distinct layers of defects (types I, II and III) are identified. Fine clusters (type III) in the near-surface regions of both Si exp +and Ge exp + pre-amorphized samples are shown to be related to fluorine. In addition, models for the nucleation of interstitial dislocation loops (type I) and hairpin dislocations (type II) are presented. These models and the experimental results suggest that the densities of type I and type II defects can be reduced by pre-amorphizing with Ge exp + instead of Si exp + . Furthermore, defect-free regrowth is demonstrated for samples which are pre-amorphized with Ge exp + and rapid-thermally annealed at 1150 degrees C. (ERA citation 09: 043970)
Desc.: *Silicon; Amorphous State; Annealing; Boron Fluorides; Germanium Ions; Ion Implantation; Silicon Ions; Transmission Electron Microscopy
Ident.: ERDA/360605; NTISDE
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 20 
1091670 DE84002972/XAB
CNG Acid Gas Removal Process. Technical Progress Report No. 10, February 1-April 30, 1983
Auyang, L.; Brown, W. R.; Cook, W. J.; Liu, Y. C.; Petrik, M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Report No.: DOE/MC/14399-1510
Sept. 83 91p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8501; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Two tasks were active during the tenth quarter of the CNG acid gas removal project. Subtask 1.4: calibration of instruments and elimination of equipment difficulties for the process development-scale triple-point crystallizer. Subtask 2.1: acquisition of crystallizer rate and mechanical slurry handling data. Within Subtask 1.4, a method was established to allow the washer-melter liquid level to fluctuate within a specified range. Bulk movement of the liquid within this range promotes a ratchet-type upward movement of the solid bed. Continuous crystallizer runs up to 5 hours have been achieved with this intermittent upward movement of the solid bed. The persistent gradual accumulation of solid carbon dioxide in the flasher is now the major obstacle preventing long-term continuous operation of the crystallizer. Within Subtask 2.1, the continuous crystallizer runs this quarter have achieved steady state crystallizer concentration profiles, and permitted measurement of crystallizer separation factors for the system hydrogen sulfide-carbon dioxide. The separation factors fall in the range 1000-3000. The lower bound separation factor, 1000, is double the value used in recent engineering designs of the crystallizer. A complete data log of one crystallizer run with the system hydrogen sulfide-carbon dioxide is presented in Appendix A. 3 references, 68 figures, 12 tables. (ERA citation 09: 042569)
Desc.: *CNG Process; *Carbon Dioxide; *Hydrogen Sulfides; Calibration; Crystallization; Engineering; Experimental Data; Gas Chromatography; Photometry; Pumping; Recycling; Removal; Research Programs Slurries
Ident.: ERDA/010404; ERDA/010402; NTISDE
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 97F (Energy--Fuel Conversion Processes) 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control); 97R (Energy--Environmental Studies)

Y006006 21 
1091667 DE8005496/XAB
CNG Acid Gas Removal Process. Technical Progress Report No. 5, November 1, 1981-January 31, 1982
Adler, R. J.; Auyang, L.; Brown, W. R.; Cook, W. J.; Liu, Y. C.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Report No.: DOE/MC/14399-T4
Nov. 82 53p
Portions are illegible in microfiche products.
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8501; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Three tasks were active during the fifth quarter of the CNG Acid Gas Removal project: Subtask 1.3 design and construction of a bench-scale triple-point crystallizer; Subtask 2.4 slurry pumping; and Task 4 fate of trace components. Within Subtask 1.3, safety considerations for the present CNG triple-point crystallizer system are summarized. These include: (1) building safety features, (2) crystallizer safety features, and (3) personnel safety features. Within Subtask 2.4, the minimum net positive suction head required for a MicroPump gear pump to successfully pump slurries of solid carbon dioxide in an organic liquid carrier solvent has been determined. Task 4, determination of the fate of trace contaminants in the CNG acid gas removal process, is complete. Trace contaminants anticipated in the crude gas entering acid gas removal are removed to acceptably low levels by the CNG process and rejected with the acid gases. With the possible exception of benzene, no recycle loops or accumulation of contaminants occur in the CNG process. Combinations of feed gas pressure and benzene contamination which may cause deposition of solid benzene are defined. 21 references, 10 figures, 6 tables. (ERA citation 09: 039215)
Desc.: *Benzene; *CNG Process; *Carbon Dioxide; *Fuel Gas; *Hydrogen Sulfides; *Pumps; *Slurries; Crystallization; Engineering; Experimental Data; Flowsheets; Hydrocarbons; Performance; Pressure Dependence; Pumping; Purification; Removal; Research Programs; Safety; Solubility; Solvent Properties; Sulfur Compounds; Temperature Dependence; Trace Amounts
Ident.: ERDA/010404; ERDA/00402; NTISDE
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 97F (Energy--Fuel Conversion Processes) 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 68 (Environmental Pollution and Control--Air Pollution and Control); 97R (Energy--Environmental Studies)

Y006006 22 
1091658 DE82001087/XAB
CNG Acid Gas Removal Process. Technical Progress Report 3, 1 May 1981-31 July 1981
Adler, R. J.; Auyang, L.; Brown, W. R.; Cook, W. J.; Gardner, N. C.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Report No.: DOE/MC/14399-T2
Sept. 81 98p
Portions are illegible in microfiche products. Original copy available until stock is exhausted.
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8501; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Five tasks were active during the third quarter of the CNG Acid Gas Removal Project. Subtask 1.2, selection of CNG crystallizer design philosophy, was completed. The flasher design philosophy selected is a large area pool boiled flasher. The melter design philosophy is a drained bed melter. Within Subtask 2.2, equilibrium data acquisition, construction of the vapor liquid solid equilibrium apparatus was completed. Tests of the completed apparatus with the binary systems carbon dioxide-ethylene and carbon dioxide-hydrogen are in progress. Within Subtask 2.3, crystallization separation factors were determined for several systems: carbon dioxide-hydrogen sulfide, carbon dioxide-carbonyl sulfide, carbon dioxide-ethane, and carbon dioxide-ethylene. For each system, sharp separation was obtained in one stage of crystallization. Subtask 3.1, conceptual studies to assess treatment of low carbon dioxide crude gases, was completed. Modifications of the CNG acid gas removal process which were examined to treat low carbon dioxide crude gases fall into two categories: (1) modifications which replace liquid carbon dioxide as the absorbent for sulfur-containing molecules, and (2) modifications which increase the carbon dioxide dew point of the crude gas to enable the use of liquid carbon dioxide absorbent. Although none of the above modifications of the CNG process has a clear cut economic advantage over conventional selective physical absorption acid gas removal, an alternative, potentially attractive process based on the liquid phase oxidation of hydrogen sulfide is identified for treating low carbon dioxide crude gases. Within Task 4, a comprehensive literature search was initiated to identify probable trace contaminants in crude gasifier gas. 21 references, 20 figures, 13 tables. (ERA citation 09: 042571)
Desc.: *CNG Process; *Carbon Dioxide; *Carbon Oxysulfide; *Ethane; *Ethylene; *Fuel Gas; *Hydrogen; *Hydrogen Sulfides; *Sulfur; Absorption; Crystallization; Engineering; Equilibrium; Experimental Data; Flowsheets; Liquids; Low Temperature; Medium Pressure; Modifications; pressure Dependence; Purification; Recovery; Removal; Research Programs; Separation Processes; Solubility; Solvent Properties; Temperature Dependence; Vapors
Ident.: ERDA/010404; ERDA/010402; NTISDE
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 97F (Energy--Fuel Conversion Processes) 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control); 97R (Energy--Environmental Studies)

Y006006 23 
1088598 DE84016876
CNG Acid Gas Removal Process. Final Technical Report
Auyang, L.; Liu, Y. C.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-1652
Apr. 84 357p
Portions are illegible in microfiche products. Original copy available until stock is exhausted.
Lang.: Eng.
NTIS Prices: PC A16/MF A01
Jrnl Ann.: GRAI8426; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Work under Contract DE-AC21-80MC14399 comprised four tasks designed to advance development of the CNG acid gas removal process: Task 1 - development of a modified carbon dioxide triple-point crystallizer, Task 2 - acquisition of basic process data, Task 3 - extension of the process to low carbon dioxide content crude gases, and Task 4 - fate of trace contaminants in the CNG process. Task 2 covered crystallizer operation and data acquisition, other process data acquisition unrelated to the crystallizer, and process design studies. Task 2 is comprised of five Subtask. Rate and mechanical slurry handling data for the crystallizer were obtained under Subtask 2.1. For Subtask 2.2, apparatus was constructed and operated to obtain multi-component phase equilibrium data. For Subtask 2.3, crystallizer separation factors were determined for the binary systems carbon dioxide-hydrogen sulfide, carbon dioxide-carbonyl sulfide, carbon dioxide-ethane, carbon dioxide-ethylene, and carbon dioxide-methyl mercaptan. For Subtask 2.4, the minimum net positive suction head (NSH) required to pump slurries of solid carbon dioxide in an organic liquid carrier solvent was determined for two gear pumps, a piston pump, and a centrifugal pump. For Subtask 2.5, alternative techniques for trace water removal from syngas mixtures were investigated, the likelihood of hydrate formation for methane, carbon dioxide, and hydrogen sulfide was assessed, and the solubility of water in liquid carbon dioxide was measured experimentally. 63 references, 64 figures, 50 tables. (ERA citation 09: 042570)
Desc.: *CNG Process; *Carbon Dioxide; *Carbon Monoxide; *Carbon Oxysulfide; *Ethylene; *Fuel Gas; *Hydrogen; *Hydrogen Sulfides; *Ketones; *Methane; *Slurries; *Water; Bi-Gas Process; Crystallization; Data Acquisition Systems; Design; Engineering; Equilibrium; Equipment; Ethane; Experimental Data; Flowsheets; Gas Hydrates; Liquids; Modifications; Phase Diagrams; Phase Studies; Pumping; Purification; Removal; Research Programs Solubility; Solvent Properties; Thiols; Vapors; Water Removal
Ident.: ERDA/010404; ERDA/010402 NTISDE
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control); 97R (Energy--Environmental Studies); 97F (Energy--Fuel Conversion Processes); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 24 
1085723 DE84014737
Studies of Pulsed Laser Melting and Rapid Solidification Using Amorphous Silicon
Lowndes, D. H.; Wood, R. F.
Oak Ridge National Lab., TN.
Corp. Source Codes: 021310000; 4832000
Sponsor: Department of Energy, Washington, DC.
Report No.: CONF-840775-1
Jun. 84 27p
Trieste IUPAP semiconductor symposium on high excitation and short pulse phenomena, Trieste, Italy, 2 Jul. 1984.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8425; NSA0900
Co. of Pub.: U. S.
Contract No.: AC05-84OR21400
Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that they thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. EM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations. (ERA citation 09: 040624)
Desc.: *Silicon; Amorphous State; Ion Implantation; Laser-Radiation Heating; Layers; Melting; Nucleation; Solidification; Thermal conductivity
Ident.: ERDA/360602; *Amorphous silicon; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 25 
1085417 DE84002985
CNG Acid Gas Removal Process. Technical Progress Report No. 11, May 1-July 26, 1983
Auyang, L.; Brown, W. R.; Cook, W. J.; Liu, Y. C.; Petrik, M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 915527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-1511
Oct. 83 71p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8425; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Active development work on the CNG Acid Gas Removal Process under DOE Contract No. DE-AC21-80MC14399 ceased August 4, 1983. During the last quarter of the contract, one task was active. Subtask 2.1: crystallizer operation for extended periods of time. Within Subtask 2.1, a continuous crystallizer run of 22 hours duration was logged August 3-4, 1983. The crystallizer run was performed with the system hydrogen sulfide-carbon dioxide. Crystallizer modifications which permitted the extended run, and problems encountered which eventually terminated the extended run, are discussed. A complete data log of the extended crystallizer run is presented in Appendix A1. Independent batch experiments were performed to study the adherence to various surfaces of solid carbon dioxide formed by triple-point flashing. Solid carbon dioxide formed by flashing pure liquid carbon dioxide adhered, to a greater or lesser degree, to all surfaces studied. Non-volatile contaminants added to the flashing liquid carbon dioxide reduced the deposition of solid CO sub 2; at about 7 mol % contaminant concentration, no deposits of solid CO sub 2 formed. Several crystallizer modifications and improvements are recommended to prepare the crystallizer for integrated operation with the planned hydrogen sulfide absorber. 2 references, 3 figures, 1table. (ERA citation 09: 039213)
Desc.: *CNG Process; *Carbon Dioxide; *Fuel Gas; *Hydrogen Sulfides; Cryogenics; Crystallization; Engineering; Equipment; Experimental Data; Gas Chromatography; Pumping; Pumps; Purification; Removal; Slurries
Ident.: ERDA/010404; ERDA/010402; *Air pollution control; NTISDE
Sec. Head.: 13B (Mechanical, Industrial, Civil, and Marine Engineering--Civil Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control)

Y006006 26 
1085414 DE84002471
CNG Acid Gas Removal Process. Technical Progress Report No. 8, August 1-October 31, 1982
Auyang, L.; Brown, W. R.; Cook, W. J.; Liu, Y. C.; Petrik M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-1508
Aug. 83 49p
Portions are illegible in microfiche products. Original copy available until stock is exhausted.
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8425; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Two tasks were active during the eight quarter of the CNG Acid Gas Removal Process Project. Subtask 1.4.: testing and calibration of the process demonstration-scale triple-point crystallizer equipment and instrumentation; and Subtask 2.5 water removal. Subtask 1.4 was completed. Startup procedure is discussed. Procedures for testing and calibrating the crystallizer components and the integrated system are explained and test results are presented. Problems detected during the tests were corrected. Results of initial test runs are discussed. Subtask 2.5 was completed. Three alternative water removal schemes were examined: (1) conventional absorption/regeneration using dimethyl formamide (DMF) or methyl isobutyl ketone (MIBK), (2) absorption using methanol with subsequent condensation of methanol, and (3) adsorption using molecular sieves. The fate in the CNG Process of remaining trace water was examined. The sparse solubility of water in liquid carbon dioxide is sufficient to cause essentially complete absorption of water by liquid carbon dioxide in the hydrogen sulfide absorber. Water is rejected with the acid gases by crystallization. 19 references, 11 figures, 7 tables. (ERA citation 09: 039211)
Desc.: *CNG Process; *Carbon Dioxide; *Fuel Gas; *Hydrogen Sulfides; *Water; Amides; Coal Gasification; Crystallization; Engineering; Experimental Data; Ketones; Methanol; Molecular Sieves; Purification; Removal; Research Programs; Solubility; Solvent Properties; Water Removal
Ident.: ERDA/010404; ERDA/010402; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 21D (Propulsion and Fuels--Fuels); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 97F (Energy--Fuel Conversion Processes)

Y006006 27 
1085412 DE84000822
CNG Acid Gas Removal Process. Technical Progress Report No. 0, November 1, 1982-January 31, 1983
Auyang, L.; Brown, W. R.; Cook, W. J.; Liu, Y. C.; Petrik, M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-1509
Sept. 83 19p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8425; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Two tasks were active during the ninth quarter of the CNG acid gas removal project: Subtask 1.4, calibration of instruments and elimination of equipment difficulties for the process development-scale triple-point crystallizer; and Subtask 2.1, acquisition of crystallizer rate and mechanical slurry handling data. Within Subtask 1.4, slurry pumping difficulties were resolved by extending the flash zone (longer flash vessel), and by placing a coarse filter over the slurry outlet port to exclude large particles from the slurry pump suction line. The slurry pump is a 0.5-inch ECO gear pump. Successful slurry pumping permitted a solid bed several feet tall to accumulate in the washer-melter; the solid bed moved upward in a stick-slip mode rather than continuously. Crystal melting commenced when the solid emerged from the liquid, but lasted only briefly before the bottom of the solid bed collapsed and prevented further upward movement of solid. The causes of solid bed collapse, and crystallizer modifications to prevent collapse, are being studied. Within Subtask 2.1, the melt rate obtained in the 3-inch drained bed melter was .5 lb. melt gas/min. (10.2 lb. melt gas/square foot/min.). The pressure driving force for melting was 2 psi or less, and no agitation was used. The drained bed melt rate compares with the original submerged bed melt rate of about 78 lb. melt gas/square foot/min. obtained with 5 psi pressure driving force and robust agitation. 2 figures, 2 tables. (ERA citation 09: 039212)
Desc.: *CNG Process; *Carbon Dioxide; *Fuel Gas; *Hydrogen Sulfides; *Pumps *Slurries; Calibration; Coal Gasification; Cryogenics; Crystallization; Design; Engineering; Equipment; Flowsheets; Pumping; Purification; Removal; Research Programs
Ident.: ERDA/010404; ERDA/010402; *Air pollution control; NTISDE
Sec. Head.: 13B (Mechanical, Industrial, Civil, and Marine Engineering--Civil Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control)

Y006006 28 
1085391 DE81027814
CNG Acid Gas Removal Process. Technical Progress Report No. 2, 1 February-30 April 1981
Adler, R.; Auyang, L.; Brown, W. R.; Cook, W. J.; Gardner, N. C.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-T1 1981 38p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8425; NSA0900
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
During the second quarter of the CNG Acid Gas Removal Project, 4 subtasks were active. Within Subtask 1.1, melter design studies were performed to identify methods of improving melting rates in the CNG crystallizer. Greatly enhanced melting rates are thought possible with a melter configuration that excludes liquid carbon dioxide from the melting region and allows more intimate contact of the vapor and solid carbon dioxide. Also within Subtask 1.1, a review of triple-point desalination process literature was completed. Within Subtask 0.2, reconstruction and testing of the vapor-liquid solid equilibrium apparatus is nearly complete. Test operation with the carbon dioxide - ethylene binary system produced data in excellent agreement with published data for this system. The increased sample volume permitted minimum disturbance of the equilibrium states, and vapor-recirculation agitation permitted rapid attainment of equilibrium. Within Subtask 2.3, the original CNG crystallizer is being reactivated to measure separation factors for carbonyl sulfide and trace contaminants. Primary efforts to date have focused on reactivation of the crystallizer. However, a successful run with pure carbon dioxide was achieved late in April. Within Subtask 3.1, conceptual studies to assess treatment of low carbon dioxide crude gases focused on three processes: (1) a precompression process to boost the partial pressure of carbon dioxide; (2) a modified non-selective physical absorption process; and (3) a modified non-selective physical absorption process with solvents slurry. None of these three processes are as attractive as the modified physical absorption process incorporating the CNG crystallizer reported in the fist quarterly report. 12 references, 6 figures, 1 table. (ERA citation 0: 039214)
Desc.: *CNG Process; *Carbon Dioxide; *Ethylene; *Fuel Gas; *Hydrogen Sulfides; *Ketones; Absorption; Carbon Oxysulfide; Coal Gasification; Crystallization; Engineering; Equilibrium; Experimental Data Liquids; Phase Diagrams; Phase Studies; Purification; Removal; Research Programs; Vapors; Water Removal
Ident.: ERDA/010404; ERDA/010402; *Air pollution control; NTISDE
Sec. Head.: 13B (Mechanical, Industrial, Civil, and Marine Engineering--Civil Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control)

Y006006 29 
1064950 DE83751201
Development of a Unit for Energy Storage
Gjelsvik, N.
Institutt for Energiteknikk, Kjeller (Norway).
Corp. Source Codes: 077234000; 3246500
Report No.: IFE/KR/E-82/00
Nov. 82 23p
In Norwegian.
U.S. Sales Only.
Lang.: Norwegian
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8417; NSA0900
Co. of Pub.: Norway
The development of a unit for energy storage based on molten salts is described. The tapping of energy is performed through an oil layer on the top of the molten salt in order to avoid growing of solidified salt on the heat transfer area. It is shown that the system will work satisfactorily if the tankwalls at the division of the oil/salt phases are heated to avoid the start of crystal growth, otherwise the surface will rapidly be subject to full growth. The heat transfer is 1-3 kWh/m exp 2 at the ion/salt interface. For heating of buildings the system is not economic, but it could be of interest for industrial applications where frequent charging and discharging of energy is needed. 6 drawings, 2 tables. (ERA citation 09: 016613)
Desc.: *Thermal Energy Storage Equipment; Cooling; Experimental Data; Heat Transfer; Heating; Hydrates; Molten Salts; Oils; Phase Change Materials; Phase Transformations; Tanks; Temperature Measurement
Ident.: *Foreign technology; ERDA/250600; NTISDEE
Sec. Head.: 10C (Energy Conversion (Non-propulsive)-Energy Storage); 7D (Chemistry--Physical Chemistry); 97O (Energy--Miscellaneous Energy Conversion and Storage); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 30 
1064924 DE83014644
Dissolution of Borosilicate Glass in the Presence of Basalt and Groundwater at 300 Bars and 100 exp 0 to 300 exp 0 C
Holloway, J. R.; Clemens, J. D.
Arizona State Univ., Tempe.
Corp. Source Codes: 000950000; 0451000
Sponsor: Department of Energy, Washington, DC.
Report No.: RHO-BW-SA-302AP; CONF-8305180-1
Jun. 83 3p
American Geophysical Union meeting, Baltimore, MD, USA, 30 May 1983.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8417; NSA0900
Co. of Pub.: U. S.
Contract No.: AC06-80RL01030
Borosilicate glass, PNL 76-78, a simulated waste form for nuclear waste disposal, was reacted together with a Columbia River toleiitic basalt and synthetic groundwater in modified Dickson-type rocking autoclaves. These experiments were performed to determine the suitability of disposing borosilicate glass in a nuclear waste repository located in basalt. Solutions were sampled periodically over durations of one month at 300 exp 0 C, three months at 200 exp 0 C, and seven months at 100 exp 0 C. Water: solid mass ratio was 10: 1. From the observations on the solutions and solid phases it appeared that significant dissolution, reaction, and precipitation occurred at 200 exp and 300 exp 0 C, but that only dissolution occurred at 100 exp 0 C. The lack of precipitation of daughter phases or reaction of solution with the basalt at 100 exp 0 C caused all elements released from the borosilicate glass to remain in solution. This is interpreted to be caused by kinetic limitations on the nucleation of daughter phases The average dissolution rate at 100 exp 0 C was roughly 0.5 g glass per liter groundwater per square meter of glass surface per month. (ERA citation 09: 019785)
Desc.: *Basalt; *Borosilicate Glass; *Radioactive Waste Disposal; Autoclaves; Bench-Scale Experiments; *Dissolution; Experimental Data; Geologic Deposits; Ground Water; High Pressure; High Temperature; Hydrothermal Alteration; Precipitation; Rock-Fluid Interactions; Simulation; Temperature Dependence; Underground Disposal
Ident.: ERDA/052002; NTISDE
Sec. Head.: 18G (Nuclear Science and Technology--Radioactive Wastes and Fission Products); 77G (Nuclear Science and Technology--Radioactive Wastes and Radioactivity)

Y006006 31 
1057172 DE82003590
Indium Phosphide/Cadmium Sulfide Thin-Film Solar Cells. Final Report, June 1980-June 1981
Danio, K.
Hughes Research Labs., Malibu, CA.
Corp. Source Codes: 02375000; 3064000
Sponsor: Department of Energy, Washington, DC.
Report No.: SERI/TR-9196-T2
Oct. 81 65p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8414; NSA0700
Co. of Pub.: U. S.
Contract No.: AC02-77CH00178
Thin-films of InP were grown on recrystallized CdS (RXCdS) and IP by planar reactive deposition for the purpose of determining the factors which limit the development of InP/RXCS thin-film solar cells. InP films were grown on RXCdS at substrate temperatures of 380 exp 0 C, 330 exp 0 C, and 80 exp 0 C; epitaxy of InP was achieved only at 280 exp 0 C. An InCdS transition layer is present at temperatures above 300 exp 0 C and may inhibit InP epitaxy. Be-doped films could not be made p-type on either RXCdS or semi-insulating (100) InP at a substrate temperature of 280 exp 0 C. P-type behavior was only occasionally obtained at 330 exp 0 C. At approximately 330 exp 0 C, MBE data shows a transition from a reconstructed surface at a higher temperature to an atomically smooth surface at a lower temperature. A change in surface kinetics at this temperature may alter the doping mechanism. Therefore, the electron concentration was examined as a function of the ratio of the phosphorus to indium fluxes for unintentionally doped films prepared on (100) semi-insulating InP substrates at 330 exp 0 C to alter the surface kinetics. No dependence of conductivity on deviations from stoichiometry was found. The growth of InP in a halide environment at reduced pressure is recommended as an alternative approach to enhance the growth of p-type InP at a lower substrate temperature. Growth of InP with PCl sub 3 was initiated at atmospheric pressure. Alternative device structures are presented which avoid the p-type doping problem. (ERA citation 07: 053341)
Desc.: *Cadmium Sulfide Solar Cells; *Indium Phosphides; Beryllium Carrier Density; Chemical Vapor Deposition; Crystal Doping; Electric Conductivity; Epitaxy; Fabrication; Films; Grain Size; Halides; Impurities P-Type Conductors; Recrystallization; Stoichiometry; Temperature Dependence; Zinc
Ident.: ERDA140501; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources); 97N (Energy--Solar Energy)

Y006006 32 
1050112 N84-17982/9
Study of Nucleation and Growth of Thin Films by Means of Computer
Simulation: General Features
Salik, J.
National Aeronautics and Space Administration, Cleveland, OH. Lewis Research Center.
Corp. Source Codes: 019039001; ND315753
Report No.: NAS 1.15: 83559; E-1869; NASA-TM-83559 1984 14p
Proposed for Presentation at the 11th Intern. Conf. On Metal. Coatings, San Diego, Calif., 9-13 Apr. 1984; Sponsored by AM. Vacuum Soc.
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI841; STAR2208
Co. of Pub.: U. S.
Some of the processes involved in the nucleation and growth of thin films were simulated by means of a digital computer. The simulation results were used to study the nucleation and growth kinetics resulting from the various processes. Kinetic results obtained for impingement, surface migration, impingement combined with surface migration, and with reevaporation are presented. A substantial fraction of the clusters may form directly upon impingement. Surface migration results in a decrease in cluster density, and reevaporation of atoms from the surface causes a further reduction in cluster density.
Desc.: *Computerized simulation; *Nucleation; *Thin films; *Crystal growth; Evaporation; Kinetics
Ident.: NTISNASA
Sec. Head.: 20B (Physics--Crystallography); 11C (Materials--Coatings), Colorants, and Finishes); 71E (Materials Sciences--Coatings, Colorants, and Finishes); 46D (Physics--Solid State Physics)

Y006006 33 
1048238 AD-A138 123/5
Studies of Coercive Force of Permanent Magnet Materials (Final rept. 1 Jan-31 Dec 83)
Wallace, W. E.
Pittsburgh Univ., PA. Dept. of Chemistry.
Corp. Source Codes: 005269030; 400482
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARO-19967.1-MS
31 Jan 84 14p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8411
Co. of Pub.: U. S.
Contract No.: DAAG29-83-K-0024
Permanent magnets were prepared by sintering on-stoichiometry Sm2Co17 and Sm2Co17 doped Fe, Mn, Zr and Hf. Coercive forces subscript i H subscript C were low, less than 1 kOe. Although doping increases anisotropy field, it does not enhance subscript H subscript C except for Mn as dopant. In this case, doping increases subscript i H subscript C about two-fold. In these systems subscript i H subscript C seems to be nucleation-controlled. It is postulated that nucleation occurs at the oxidized surface where anisotropy is weak or negative. Surfaces were investigated by Auger spectroscopy with results consistent with the postulated mechanism. To test for effects of surface roughness, powders were washed with acid. No increase in subscript i H subscript C was observed. Samples ground under pentane and liquid nitrogen showed no significant difference in subscript i H subscript C. Oxygen content was about 3000 ppm by weight in the finished magnets. Results suggest that coercive force of the so-called 2-17 magnets (which are actually 2-phase mixtures of components with 1: 5 and 2: 17 stoichiometry, originates with the component having 1: 5 stoichiometry.
Desc.: *Permanent magnets; *Magnetic materials; *Coercive force; Sintering; Stoichiometry; Doping; Iron; Manganese; Zirconium; Hafnium; Low level; Anisotropy; Nucleation; Control; Surfaces; Auger electron spectroscopy; Surface roughness
Ident.: Samarium alloys; Cobalt alloys; NTISDODXA; NTISDODA
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 34 
1040752 AD-A137 243/2
Growth of HgCdTe by Modified Molecular Beam Epitaxy (Final rept. 11 Feb. 79-1 Mar 83)
Cheung, J. T.; Sankur, H.
Rockwell International, Thousand Oaks, CA. Science Center.
Corp. Source Codes: 052870003; 389949
Report No.: SC5202.23FR
Dec 83 75p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8409
Co. of Pub.: U. S.
Contract No.: MDA903-79-C-0188; DARPA Order-3704
Laser assisted deposition was applied successfully to thin film growth of three materials: HgCdTe, CdTe and ZnO. For HgCdTe, congruent evaporation was induced by pulsed laser irradiation. Epitaxial Hg0.7Cd0.3Te layers up to 15 micrometers thick were grown on (111) CdTe substrates at 120 C in .0001 Torr of Hg backpressure from a single evaporation source. Materials were characterized structurally and electrically. The as-grown layers were n-type. After 410 C annealing, they were converted to p-type. n+/p implanted photodiodes were demonstrated. Very high quality (111) CdTe/(100) GaAs heteroepitaxy was demonstrated. The growth rate was as high as 12 micrometers/hr. The layers were characterized with x-ray, photoluminescence, UV reflectance and transmission electron microscopy and found to have very high crystalline quality. ZnO films were grown on a large variety of substrates using a pulsed CO2 laser. The substrate temperature were only 250 C, the films were highly oriented and uniform. They were also piezoelectric. Surface and acoustic have transducers were demonstrated. Coupling coefficient superscript 2 was found to be 0.005. (Author)
Desc.: *Thin films; *Epitaxial growth; *Electron beams; Laser applications; Gallium arsenides; *Zinc oxides; Deposition; Laser beams; Evaporation; Substrates; Layers; N type semiconductors; Annealing; P type semiconductors; Implantation; Photodiodes; Piezoelectric materials; Surface acoustic wave devices; Microscopy
Ident.: *Mercury cadmium tellurides; *Molecular beam epitaxy; NTISDODXA
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 35 
1031353 DE84000039
Application of the Carbon Dioxide-Barium Hydroxide Hydrate Gas-Solid Reaction for the Treatment of Dilute Carbon Dioxide-Bearing Gas Streams
Haag, G. L.
Oak Ridge National Lab., TN.
Corp. Source Codes: 021310000; 4832000
Sponsor: Department of Energy, Washington, DC.
Report No.: ORNL-5887
Sept. 83 298p
Thesis. Submitted to the Univ. of Tennessee, Knoxville.
Lang.: Eng.
NTIS Prices: PC A13/MF A01
Jrnl Ann.: GRAI8405; NSA0800
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-26
The removal of trace components from gas streams via irreversible gas-solid reactions in an area of interest to the chemical engineering profession. This research effort addresses the use of fixed beds of Ba(OH) sub 2 hydrate flakes for the removal of an acid gas, CO sub 2 , from air that contains approx. 330 ppM/sub v/ CO sub 2 . Areas of investigation encompassed: (1) an extensive literature review of Ba(OH) sub 2 hydrate chemistry, (2) microscale studies on 0.150-g samples to develop a better understanding of the reaction, (3) process studies at the macroscale level with 10.2-cm-ID fixed-bed reactors, and (4) the development of a model for predicting fixed-bed performance. Experimental studies indicated fixed beds of commercial Ba(OH) sub 2 .8H sub 2 O flakes at ambient temperatures to be capable of high CO sub 2 -removal efficiencies (effluent concentrations <100 ppB), high reactant utilization (>99%), and an acceptable pressure drop (1.8 kPa/m at a superficial gas velocity of 13 cm/s). Ba(OH) sub 2 .8H sub 2 O was determined to be more reactive toward CO sub 2 than either Ba(OH) sub 2 .3H sub 2 O or Ba(OH) sub 2 .1H sub 2 O. A key variable in the development of this fixed-bed process was relative humidity. Operation at conditions with effluent relative humidities >60% resulted in significant recrystallization and restructuring of the flake and subsequent pressure-drop problems. (ERA citation 08: 055536)
Desc.: *Barium Carbonates; *Barium Hydroxides; *Carbon Dioxide; *Radioactive Waste Processing; Adsorption; Carbon 14; Chemical Reactions; Crystal Structure; Experimental Data; Gaseous Wastes; Gases; Hydrates; Isotherm; Mass Transfer; Packed Bed; Phase Diagrams; Solids; Solubility; Specifications; Vapor Pressure
Ident.: ERDA/052001; ERDA/400201; NTISDE
Sec. Head.: 7D (Chemistry--Physical Chemistry); 7A (Chemistry--Chemical Engineering); 99F (Chemistry--Physical and Theoretical Chemistry); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 36 
1025363 PB84-122043
Reports of the Asahi Glass Foundation for Industrial Technology. Volume 40, 1982
Asahi Glass Foundation for Industrial Technology, Tokyo (Japan).
Corp. Source Codes: 074585000 1982 322p
Text in Japanese. See also PB84-122050.
Lang.: Japanese
NTIS Prices: PC E13/MF E01
Jrnl Ann.: GRAI8403
Co. of Pub.: Japan
The Foundation is an independent organization which donates funds for university professors to conduct research. Research reports are published biannually. This volume contains 35 reports. Partial list of titles follows: Studies on Industrial Filtration and Expression of Newtonian and Non-Newtonian Liquid-Solid Mixtures (Part I and II); Analysis of Interdiffusion in Liquid Silicates by Multiatomic Ion Model; Homologation of Methanol Catalyzed by Mixed Transition Metal Clusters; Heterogeneous Nucleation on Boiling; Fundamental Studies on Applications of Chemical Ionization Mass Spectrometry; Studies on the metal-carbon bond stretching force constants (II); Polymerization of Epoxides Catalyzed by Triphenylantimony Dihalides-Lewis Base Systems; Ellipsometric Studies of Adsorption of Polystyrene onto a Metal Surface in Good Solvent Conditions; Surface Hydrodynamics of Surfactant Solutions and its Effect; Technological Study on Separation and Purification of Colloidal Solution using Electro-Ultrafiltration and Gel Filtration (Part I and II); An application of the SPE method to organic electrochemistry (Part I); New Application of Clathrate Hydrates Having High Melting Points; Preparation of Grain-Oriented Ceramics of Layer-Structure Bismuth Compounds by Unidirectional Solidification of their Melts.
Desc.: Filtration; Diffusion; Silicates; Methyl alcohol; Nucleation ; Boiling; Mass spectroscopy; Chemical bonds; Metals; Epoxy resins; Polymerization; Polystyrene; Melting points; Ceramics; Polarimetry; Surfaces; Surfactants; Solutions; Electrochemistry
Ident.: *Foreign technology; *Industrial research; Liquid-solid interfaces; Chemical ionization mass spectroscopy; NTISTFAGC
Sec. Head.: 7D (Chemistry--Physical Chemistry); 41P (Manufacturing Technology--Research Program Administration and Technology Transfer); 99GE (Chemistry--General); 71GE (Materials Sciences--General)

Y006006 37 
1021584 N83-34231/1
Homogeneous Nucleation and Droplet Growth in Nitrogen (M. S. Thesis)
Dotson, E. H.
Joint Inst. for Advancement of Flight Sciences, Hampton, VA.
Corp. Source Codes: 064047000; J412203
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NAS 1.26:172206; NASA-CR-172206
Sept. 83 88p
Lang.: Eng.
NTIS Prices: PC A05/F A01
Jrnl Ann.: GRAI8402; STAR2122
Co. of Pub.: U. S.
Contract No.: NCC1-44
A one dimensional computer model of the homogeneous nucleation process and growth of condensate for nitrogen flows over airfoils is developed to predict the onset of condensation and thus to be able to take advantage of as much of Reynolds capability of cryogenic tunnels as possible. Homogeneous nucleation data were taken using a DFVLRCAST-10 airfoil in the 0.3-Meter Transonic Cryogenic Tunnel and are used to evaluate the classical liquid droplet theory and several proposed corrections to it. For predicting liquid nitrogen condensation effects, use of the arbitrary Tolman constant of 0.25 x 250 billionth m or the Reiss or Kikuchi correction agrees with the CAST-10 data. Because no solid nitrogen condensation were found experimentally during the CAST-10 experiments, earlier nozzle data are used to evaluate corrections to the classical liquid droplet theory in the lower temperature regime. A theoretical expression for the surface tension of solid nitrogen is developed.
Desc.: *Cryogenic wind tunnels; *Homogenizing; *Nitrogen; *Nucleation; *Reynolds number; Airfoils; Drops (liquids); Flow equations; Interfacial tension
Ident.: NTISNASA
Sec. Head.: 14B (Methods and Equipment--Laboratories, Test Facilities, and Test Equipment); 1A (Aeronautics--Aerodynamics); 51F (Aeronautics and Aerodynamics--Test Facilities and Equipment); 51A (Aeronautics and Aerodynamics--Aerodynamics)

Y006006 38 
1018441 DE83009108
Process Design and Economics for Ethanol from Corn Stover Via Dilute-Acid Hydrolysis: Development of a Base-Case Flowsheet for Parametric Analysis of Acid Hydrolysis Processes
Chem Systems, Inc., New York.
Corp. Source Codes: 059196000; 9500688
Sponsor: Department of Energy, Washington, DC.
Report No.: SERI/STR 231-1745
Apr. 83 136p
Portions are illegible in microfiche products. Original copy available until stock is exhausted.
Lang.: Eng.
NTIS Prices: PC A07/MF A01
Jrnl Ann.: GRAI8402; NSA0800
Co. of Pub.: U. S.
Contract No.: AC02-77CH00178
This report presents a flow sheet for a cellulose-to-ethanol plant utilizing high-temperature dilute acid hydrolysis. The process can be divided into six sections: pretreatment, hydrolysis, fermentation, purification, carbon dioxide recovery, and heat generation and waste treatment. In the pretreatment section, the raw corn stover undergoes steam explosion, the lignin is extracted by ethanol extraction, and the amorphous five- and six-carbon sugars removed in prehydrolysis. The crystallines cellulose is hydrolyzed in the hydrolysis reactor. The sugar solution from the prehydrolysis and hydrolysis sections is neutralized and fermented to carbon dioxide and ethanol in a train of continuous fermenters. The ethanol is recovered by a distillation process, and the carbon dioxide is cleaned and liquefied. The unreacted solids and various waste streams are either burned or sent to the waste pond. Capital and operating costs estimates are developed for the plant, and the total plant cost is estimated to be $236 million. The prime costs are heat generation, pretreatment, and hydrolysis. The ethanol produced costs $3.60/gal. Elimination of the lignin solvent extraction step and the prefermentation sugar concentration steps are recommended to reduce both the capital investment and energy usage of the plant. The system described in the report was not optimized. Instead it was configured to include a large number of processing steps, not all of which would be included in the same plant, in order to provide a basis for the coding of a simulation program. The ethanol costs reported are therefore much greater than would be achieved in an optimized system. (ERA citation 08:043453)
Desc.: *Ethanol; *Maize; *Ethanol Plants; Production; Acid Hydrolysis; Flowsheets; Economic Analysis; Design; Heat Treatments; Fermentation; Distillation; Carbon Dioxide; Recovery; By-Products; Waste Processing; Capitalized Cost; Operating Cost; Process Heat; Cost
Ident.: ERDA/090222; ERDA/140504; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 21D (Propulsion and Fuels--Fuels); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 97K (Energy--Fuels)

Y006006 39 
1016191 DE83701220
Conceptual Design of 1200 mW Laser Fusion Reactor in ILE Osaka University
Yamanaka, C. ; Nakai, S. ; Ido, S.
Osaka Univ. (Japan). Inst. of Laser Engineering.
Corp. Source Codes: 021837005; 9309660
Report No.: ILE-713P
9 Nov. 79 73p
U.S. Sales Only.
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8401
Co. of Pub.: Japan
The design of a 1200 MW (thermal) commercial inertial confinement fusion (ICF) reactor has been made. The original design of the reactor utilizes thick Li flow inside a spherical cavity to moderate the first wall loading and neutron fluence on solid structural materials. This Li flow is also used as the inner blanket, and is guided by steady magnetic field to form the desired Li flow. From the analysis of laser-driven fusion reaction, the scaling law for pellet gains was derived, and it was found that a 1 mJ laser would be sufficient for a 1200 MW (thermal) fusion reactor. A CO sub 2 laser system was chosen as the 1 MJ energy driver. The examination of idea of the inner blanket of thick Li flow led to the conclusion that the Li flow inner blanket would be realized. The thermal problems in the first wall, the structural problems of the reactor cavity, the method of pellet injection, the cooling system of the reactor, and the neutronics in the blanket were studied. It was shown that the breeding ratio of tritium in Li blanket was greater than unity by the calculation with the one-dimensional neutron transport code ANISN. A laser fusion power system with high pellet gain is much more effective than steam power plants of today. (Atomindex citation 14:721904)
Desc.: *First Wall; *Laser Fusion Reactors; Breeding Blankets; Breeding Ratio; Carbon Dioxide Lasers; Cooling Systems; Cost Benefit Analysis; Efficiency; Emission Spectra; Energy Balance; Fuel Pellets; Inertial Confinement; Japanese Organizations; Laser Implosions; Liquid Metals; Lithium; Plasma Pressure; Pulsed Fusion Reactors; Scaling Laws; Specifications; Thermal Conduction; Thermal Stresses; Tritium
Ident.: *Foreign technology; ERDA/700208; NTISINIS
Sec. Head.: 18A (Nuclear Science and Technology--Fusion Devices (Thermonuclear)); 77A (Nuclear Science and Technology--Fusion Devices (Thermonuclear)); 97O (Energy--Miscellaneous Energy Conversion and Storage)

Y006006 40 
1008594 NTN83-0539
Etching and Growth of GaAs: Precise temperature control adjusts melt composition before each etch (NTIS Tech Note)
National Aeronautics and Space Administration, Washington, DC.
Corp. Source Codes: 011249000
Jul. 83 1p
Write NTIS for information about Tech Notes subscriptions and back issue packages available.
Lang.: Eng.
NTIS Prices: Not available individually
Jrnl Ann.: GRAI8324
Co. of Pub.: U. S.
This citation summarizes a one-page announcement of technology available for utilization. A simple arrangement for etching away a surface layer of a gallium arsenide crystal before an epitaxial layer is deposited on it prevents an unwanted high-resistivity interface from forming. The etching and deposition setup is expected to simplify processing and improve the characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits. ...FOR ADDITIONAL INFORMATION: Contact: Tech. Transfer Div., P.O. Box 8757, BWI Airport, MD 21240; (301) 621-0100. Refer to: NPO-5625.
Desc.: *Gallium arsenides; *Etching; *Crystal growth
Ident.: NTN/G; NTN/J; NTISNTND
Sec. Head.: 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industrial Processes); 94G (Industrial and Mechanical Engineering--Manufacturing Processes and Materials Handling); 41E (Manufacturing Technology--Manufacturing, Planning, Processing, and Control)

Y006006 41 
1008580 NTN83-0525
Consolidating submicron Silicon Particles: Fine silicon powder melts and solidifies atop a silicon pedestal (NTIS Tech Note)
National Aeronautics and Space Administration, Washington, DC.
Corp. Source Codes: 011249000
Jul. 83 1p
Write NTIS for information about Tech Notes subscriptions and back issue packages available.
Lang.: Eng.
NTIS Prices: Not available individually
Jrnl Ann.: GRAI8324
Co. of Pub.: U. S.
This citation summarizes a one-page announcement of technology available for utilization. Two proposed techniques would use a molten pool of silicon at the top of a silicon pedestal to consolidate the submicron silicon particles produced by the silane process. The techniques avoid the contamination produced by casting containers. The consolidated material could be used directly to produce high-efficiency polycrystalline solar cells. In both processes, the shape of the molten layer together with the surface tension of molten silicon stabilize the layer and control the diameter of the consolidated material. ...FOR ADDITIONAL INFORMATION: Contact: Tech. Transfer Div., P.O. Box 8757, BWI Airport, MD 21240; (301) 621-0100. Refer to: NPO-15250.
Desc.: *Silicon; *Crystal growth
Ident.: NTN/D; NTN/G; NTN/H; NTISNTND
Sec. Head.: 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industrial Processes); 94G (Industrial and Mechanical Engineering--Manufacturing Processes and Materials Handling); 41E (Manufacturing Technology--Manufacturing, Planning, Processing, and Control)

Y006006 42 
1004916 DE83700428
Progress Report, Chemistry and Materials Division, 1 April - 30 June, 1981
Atomic Energy of Canada Ltd., Chalk River (Ontario). Chalk River Nuclear Labs.
Corp. Source Codes: 00342502; 0643000
Report No.: AECL-7416; PR-CMA-57
Aug. 81 93p
U.S. Sales Only.
Lang.: Eng.
NTIS Prices PC A05/MF A01
Jrnl Ann.: GRAI8323
Co. of Pub.: Canada
The work of the Division in the areas of solid state science, radiation, physical and analytical chemistry, and materials science during the quarter is described. Measurements of ion stopping power have emphasized the importance of axial symmetry and may be used to show the contribution of nuclear inelastic events to stopping processes. Enhancement of ion scattering at 180 degrees can occur even in the first few layers of a single crystal of gold implanted with heavy atoms. Agreement has been obtained between experimental and calculated rates for dechanneling of protons in gold. The rate of decomposition of HOI in aqueous solutions has been determined. The effects of radiation on dithiothreitol is being studied. Laser photochemistry work includes investigations of multiphoton dissociation and of laser-induced zirconium isotope separation. A method has been found for the preparation of oxygen gas samples for the determination of oxygen isotope ratios in water, and high-performance liquid chromatography has been applied to metals in ground water. Sputtered coatings of stainless steel on the surface of zircaloy fuel cladding reduce the oxidation rate in steam. A theoretically-based design equation for irradiation growth of pressure tubes has been developed. Studies on the effect of small strains on zircaloy-2 tubing show the need to avoid even small amounts of compressive. (Atomindex citation 13:706523)
Desc.: *Laser Isotope Separation; *Radiation Chemistry; *Reactor Materials; Solid State Physics; Isotope Ratio; Quantitative Chemical Analysis; Research Programs; Zircaloy
Ident.: *Foreign technology; ERDA/656000; ERDA/400700; NTISINIS
Sec. Head.: 7E (Chemistry--Radio and Radiation Chemistry); 7D (Chemistry--Physical Chemistry); 99A (Chemistry--Analytical Chemistry); 99E (Chemistry--Photo and Radiation Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry); 46D (Physics--Solid State Physics); 4GE (Physics--General)

Y006006 43 
1003785 DE83012046
Model for the Growth of a Two-Phase Corrosion Scale
Sutton, S. B. ; Truhan, J. J. ; Short, D. W.
Lawrence Livermore National Lab., CA.
Corp. Source Codes: 068147000 9513035
Sponsor: Department of Energy, Washington, DC.
Report No.: UCRL-88485; CONF-830508-15 1983 10p 163. Electrochemical Society meeting, San Francisco, CA, USA, 8 May 1983.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8323; NSA0800
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-48
The growth of a two-phase scale formed during the hot corrosion of nickel in CO sub 2 /SO sub 2 gas mixtures at 900 exp 0 C was modeled. It started with a pre-existing two-phase corrosion scale that has nickel oxide crystallites growing in a continuous molten nickel sulfide matrix, and then growth rate was determined by alternating equilibrium and diffusion calculations. Calculated growth rates compare well with experimental weight gain curves, particularly when the comparison is restricted to the parabolic growth region. The model tests the sensitivity of several important growth parameters. (ERA citation 08:033970)
Desc.: *Corrosion Products; *Nickel; Crystal Growth; Corrosion; Carbon Dioxide; Sulfur Dioxide; Very High Temperature; Equilibrium; Diffusion; Mathematical Models
Ident.: ERDA/360105; NTISDE
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 71G (Materials Sciences--Corrosion and Corrosion Inhibition); 41L (Manufacturing Technology--Tribology)

Y006006 44 
1003577 DE83011737
Effect of Organic Adsorbate on the Initial Stage of Electrolytic Metal Deposition: Development and Use of a Spectroscopic Ellipsometer
Farmer, J. C. ; Muller, R. H.
California Univ., Berkeley. Lawrence Berkeley Lab.
Corp. Source Codes: 005029222; 9513034
Sponsor: Department of Energy, Washington, DC.
Report No.: LBL-15607
Mar 83 507p
Lang.: Eng.
NTIS Prices: PC A22/MF A01
Jrnl Ann.: GRAI8323; NSA0800
Co. of Pub.: U. S.
Contract No.: AC03-76SF00098
A study was performed to define the functional role of surface active agents during the initial stage of electrocrystallization. The system selected for investigation involved Cu as the electrode substrate, Pb as the deposited metal, and rhodamine-B chloride as the model inhibitor. The strong absorption band of rhodamine-B in the visible spectrum made it detectable by optical techniques in submonolayer amounts on the electrode. Deposit thicknesses ranged from a single monolayer (the underpotential deposit, UPD) to thicknesses of about 1000 Angstroms. It has been found that (1) the free energy of Pb electrosorption is about 7 kcal/mol; (2) the Pb adatom in the underpotential layer is completely discharged; and (3) in the absence of rhodamine-B, a Pb monolayer completely covers the Cu surface before three-dimensional nucleation of the bulk Pb phase; (4) the bulk phase which forms on the monolayer consists of a granular, porous layer covered by large dendritic islands; (5) addition of rhodamine-B prevents complete formation of the Pb monolayer and results in more compact bulk deposits than are possible in its absence; (6) rhodamine-B inhibits dendrite growth; (7) rhodamine-B is simultaneously reduced with the Pb exp ++ ion and is depleted from the electrode surface, which results in a mass transfer controlled inhibitory effect; and (8) the dye species responsible for inhibition has a preferential normal orientation on the electrode surface. A self-compensating, magneto-optic spectroscopic ellipsometer was developed for this in situ study. To support interpretations of ellipsometry data, light scattering measurements from electrode surfaces during deposit formation were also one. (ERA citation 08:033963)
Desc.: *Electrodeposition; *Lead; *Rhodamines; *Ellipsometers; Surfactants; Crystallization; Copper; Electrodes; Organic Chlorine Compounds; Absorption Spectra; Experimental Data; Thickness; Free Energy; Design; Spectroscopy
Ident.: ERDA/360101; NTISDE
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industries Processes); 71N (Materials Sciences--Nonferrous Metals and Alloys); 94G (Industrial and Mechanical Engineering-Manufacturing Processes and Materials Handling); 41E (Manufacturing Technology--Manufacturing, Planning, processing, and Control)

Y006006 45 
0992330 DE83010265
CNG Acid-Gas-Removal Process. Technical Progress Report No. 6, 1 February 1982-30 April 1982
Auyang, L. ; Brown, W. R. ; Cook, W. J. ; Liu, Y. C. ; Petrik, M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-T5
Mar 83 40p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Announcement GRAI8319; NSA0800
Co. of Pub.: U. S.
Three tasks were active during the sixth quarter: design and construction of a bench scale triple-point crystallizer; slurry pumping; and water removal. Final designs and equipment specifications for the crystallizer control and data acquisition systems are presented. Slurry pumping is complete. The minimum net positive suction head to successfully pump slurries of solid carbon dioxide in an organic liquid carrier solvent have been determined for two gear pumps, a positive displacement pump, and a centrifugal pump. All are about five feet. Solids concentration ranged from 5 to 25% solid carbon dioxide by weight. For the task of water removal, the solubility of water in liquid carbon dioxide has been determined. The solubility ranges from about 370 ppM water in liquid carbon dioxide at -27 exp 0 C to about 150 ppM at -55 exp 0 C. (ERA citation 08:028802)
Desc.: *Fuel Gas; *Carbon Dioxide; *Hydrogen Sulfides; *Water; *CNG Process; Coal Gasification; Purification; Removal; Crystallization; Water Removal; Slurries; Pumps; Pumping; Solubility; Ice; Solvent Properties; Experimental Data; Low Temperature; Cryogenics; Engineering
Ident.: ERDA/010404; ERDA/010402; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 21D (Propulsion and Fuels--Fuels); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 97F (Energy--Fuel Conversion Processes)

Y006006 46 
098667 DE83003320
Purification of Gases, IV: Removal of Carbon Monoxide from Gases by Nickel Ferrite
Sakata, H.
Report No.: RFP-TRANS347 1974 18p
Translated from Nagaoka Kogyo Koto Senmon Gakko Kenkyu Kiyo; 10: No. 3-4, 43-53(1974), Nagaoka Kogyo Koto Senmon Gakko Kenkyu Kiyo, 10 n3-4 P43-53 1974. Portions are illegible in microfiche products.
Lang.: Eng.
Doc. Type: Translation
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8317; NSA0800
Co. of Pub.: Japan
Contract No.: AC04-76DP03533
The dried precipitate obtained by the neutralization-precipitation method (uncalcined nickel ferrite) has a composition of Ni(OH) sub 2 Fe(OH) sub 3 H sub 2 O. When this is calcined, the water of crystallization is removed at 250 exp 0 C and the combined water is removed at 350 exp 0 C At 400 exp 0 C, dehydration is completed and a ferrite is obtained. The results of tests on the performance of uncalcined nickel ferrite, carried out by passing CO-containing air through uncalcined nickel ferrite at constant temperature, show that temperature is the only factor which influences the CO-removal percentage at temperatures of 100 to 500 exp 0 C, CO concentrations in the gas of 0.25% to 9% and gas space velocities of 1000 to 900. The CO-removal percentage increases with temperature to a maximum at 400 exp 0 C, after which it decreases slightly. The results of the studies on the mechanism of carbon monoxide removal reveal that almost no physical adsorption of carbon monoxide is occurring. As regards chemical adsorption, it is considered unlikely that carbonyls or carbonates will be formed. Ferrite converts carbon monoxide to carbon dioxide mainly by acting as an oxidizing catalyst. The performance of spent ferrite is regenerated by heating the ferrite in air at 300 exp 0 C. However, the addition compound does not release its carbon monoxide unless it is heated to 1000 exp 0 C or higher temperatures. The ferrite which has been heated to 1000 exp 0 C or above to release its CO has less than half the CO-removal capacity of fresh ferrite. 20 figures, 9 tables. (ERA citation 08:015801)
Desc.: *Gases; *Carbon monoxide; *Ferrites; *Nickel compounds; Purification; Removal; Oxidation; Catalytic effects; Regeneration; Experimental data; Air pollution control; Synthesis; Temperature dependence ; High temperature
Ident.: *Foreign technology; ERDA/424000; ERDA/500200; ERDA/010800; Translations; NTISDET
Sec. Head.: 7D (Chemistry--Physical Chemistry)

Y006006 47 
0972728 AD-A125 348/3
InP (Indium Phosphides) Materials (Annual technical summary rept. 1 Oct. 81-30 Sept. 82)
Iseler, Gerald W.
Massachusetts Inst. of Tech., Lexington. Lincoln Lab.
Corp. Source Codes: 00875001; 207650
Sponsor: Electronic Systems Div., Hanscom AFB, MA.
Report No.: ESD-TR-82-157
30 Sept. 82 50
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8314
Co. of Pub.: U. S.
Contract No.: F19628-80-C-0002; 2306
This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1981 through 30 September 1982. A part of this support was provided by the Rome Air Development Center. The current objectives of the program are to improve the yield of high-purity polycrystalline InP as source material for crystal growth and to optimize the liquid-encapsulated Czochralski (LEC) method in order to grow crystals with low dislocation density, low residual impurity concentration and uniform dopant concentration.
Desc.: *Indium phosphides; *Crystal growth; *Absorption cross sections; *Carbon dioxide lasers; Striations; Temperature gradients; Molecular rotation; Charge carriers; infrared transmitters; X ray diffraction; Purity; Yield; Low density
Ident.: LEC(Liquid Encapsulated Czochralski) method; NTISDODXA; NTISDODAF
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 48 
070528 AD-A125 188/3
CW CO2 and Ruby Laser Annealing of Ion-Implanted Hg(1-x)Cd(x)Te
Bahir, G. ; Kalish, R.
Technion - Israel Inst. of Tech., Haifa.
Corp. Source Codes: 016872000; 343870
Sponsor: Air Force Office of scientific Research, Bolling AFB, DC.
Report No.: AFOSR-TR-83-0040
3 Jun. 81 5p
Pub. in Applied Physics Letter, 39 n9 p730-732, 1 Nov. 81.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8313
Co. of Pub.: Israel
Contract No.: AFOSR-82-0001; 2306; C2
No abstract available.
Desc.: *Laser applications; *Annealing; *Mercury compounds; *Cadmium tellurides; *Narrow gap semiconductors; Continuous wave lasers; Carbon dioxide lasers; Ruby lasers; Irradiation; Ion implantation; Backscattering; Crystallization; Electrical conductivity; X rays; Measurement; Reprints
Ident.:NTISDODXR; NTISDODAF
Sec. Head.: 20L (Physics--Solid-state Physics); 13H (Mechanical, Industrial, Civil and Marine Engineering--Industrial Processes); 46D (Physics--Solid State Physics)

Y006006 49 
0968212 AD-472855/6
Field Ion Microscopy of Filamentary Iron Crystals (Final rept. Jul. 64-May 65)
Mueller , Erwin W. ; Nashikawa, Osamu
Pennsylvania State Univ., University Park. Dept. of Physics.
Corp. Source Codes: 009222108; 27869
Report No.: AFML-TR-65-201
Aug. 65 17p
Distribution limitation now removed.
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8312
Co. of Pub.: U. S.
Contract No.: AF3 657 11242; AF7353; 735304
Filamentary iron crystals of the C, D and H Series as furnished by Air Force Materials Laboratory were observed in several cross sections along the total length using the field ion microscope. No change in crystal orientation was noticed for (001), (111) and (110) oriented specimens. The previously discussed amorphous core structure was found to be caused by yield in the (111) region due to the field stress. Hydrogen promoted field evaporation is a means of shaping the tip surface at a reduced field strength so that artifacts can be avoided and perfect (111) planes can be developed. The few dislocations observed place no limit on the strength of the tip core which withstands a field stress of 710 kg/sq. mm, or 4% of the bulk modulus. (Author)
Desc.: *Iron; Single crystals; *Single crystals; Microscopy; Filaments; Grain structures(Metallurgy); Crystal growth; Crystal defects; Hydrogen; Evaporation; Grain boundaries; Helium; Liquefied gases; Stresses
Ident.: Field ion Microscopy; S/L change 8305; NTISDODXD; NTISDODXDB

Y006006 50 
0968057 AD-D010 066/9
Underwater Wax Formulation and Method (Patent)
Supcoe, Robert F. ; Radakovich, Thomas
Department of the Navy, Washington, DC.
Corp. Source Codes: 001840000; 110050
Report No.: PAT-APPL-6-125 733; PATENT-4 293 339
Filed 28 Feb. 80 patented 6 Oct. 81 5p
Supersedes PAT-APPL-6-125 733.
This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of patent available Commissioner of Patents, Washington, DC 20231 $1.00.
Lang.: Eng.
Doc. Type: Patent
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8312
Co. of Pub.: U. S.
A wax coating composition capable of underwater application to submerged surfaces comprises a mixture of from about 2% to about 18% of a polymer having the recurring unit-C2F3C1-; from about 20% to about 40% of a microcrystalline wax; from about 40% to about 70% of a chlorinated paraffinic hydrocarbon and up to about 5% of a surfactant. An appropriate biocide may be interspersed into the wax to prevent marine growth. Another wax coating composition comprises a mixture of from about 16% to about 27% of a paraffin wax; from about 22% to about 33% of a microcrystalline wax; and from about 36% to about 58% of a chlorinated paraffinic hydrocarbon. A biocide such as the organotins or cuprous oxide antifoulants may comprise from about 2% to about 10% of the wax mixture. (Author)
Desc.: *Patents; *Waxes; *Formulations(Chemistry); Chlorinated hydrocarbons; Underwater; Methodology; Coatings; Mixtures; Polymers; Fluorides; Microstructure; Crystals; Inventions
Ident.: PAT-CL-106-1829; NTISGPN
Sec. Head.: 11C (Materials--Coatings, Colorants, and Finishes); 90B (Government Inventions For Licensing--Chemistry); 71E (Materials Sciences--Coatings, Colorants, and Finishes); 99GE (Chemistry--General)

Y006006 51 
0967577 AD-A124 344/3
Formation of Silicon Nitride Structures by Direct Electron-Beam Writing (Technical rept.)
Chin, Brymer Han-Yu
Illinois Univ. at Urbana-Champaign. Coordinated Science Lab.
Corp. Source Codes: 034597093; 097700
Report No.: R-940; UILU-ENG-82-2206
Feb. 82 184p
Doctoral thesis.
Lang.: Eng.
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI8312
Co. of Pub.: U. S.
Contract No.: N00014-79-C-0424
Localized deposits of silicon nitride, which are stable to at least 500 C, have been formed by a new technique: electron bombardment of nitrogen molecules weakly bound on a clean Si(100)-(2 X 1) surface chilled to T approximately 30 K. This process is fairly efficient; for an initial coverage of one monolayer of molecular nitrogen, we estimate the effective dissociation cross section (primary electron energy = 2000 eV)to be (0.54 - 1.2) x 10 to the 15th power sq. cm. Using Auger electron spectroscopy and LEED, we have studied the growth of a silicon nitride/silicon interface rigorously free from contamination and from damage due to sputtering or ion implantation. In the Si(LVV) Auger spectrum of silicon nitride, a strong peak at 83 eV predominates; the 91Ev peak characteristic of clean Si vanishes entirely for sufficiently thick nitride films (approximately 25 - 30 A). LEED measurements, with the substrate at approximately 30 K, reveal no ordered overlayers--the pattern stays (2 X 1), but the background increases with nitridation until a fully disordered structure results. Our Auger and LEED data further indicates that the initial stage of electron-induced nitridation is the formation of a monolayer of chemisorbed nitrogen via the nucleation and lateral growth of islands. Preliminary experiments have demonstrated that local deposits of silicon dioxide may be formed by the same technique used for nitridation: electron-simulated oxidation is more rapid with the substrates at T approximately 30 K than at room temperature. With proper outgassing of all vacuum components, particularly hot filaments, oxidation proceeds without the simultaneous growth of a surface carbon layer.
Desc.: *Silicon nitrides; *Electron irradiation; *Nitrogen; *Silicon; Deposition; Substrates; Low temperature; Auger electron spectroscopy; Low energy; Electron diffraction
Ident.: Nitridation; Electron beam writing; NTISDODXA
Sec. Head.: 20L (Physics--Solid-state Physics); 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industrial Processes); 46D (Physics--Solid State Physics)

Y006006 52 
965570 DE82022218
CNG Acid-Gas-Removal Process. Technical Progress Report 4 for the Period 1 August 1981-31 October 1981
Adler, R. J. ; Auyang, L. ; Brown, W. R. ; Cook, W. J. ; Keyvani, M.
Helipump Corp., Cleveland, OH.
Corp. Source Codes: 077201000; 9515527
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/MC/14399-T3
Dec 81 45p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Announcement:GRAI8311; NSA0800
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
Four tasks were active: design and construction of a bench-scale triple-point crystallizer; equilibrium data acquisition, crystallizer separation factors for several sulfur-containing molecules and trace contaminants, and slurry pumping. A new design for the CNG crystallizer has been completed. A control scheme was devised for the new design. Equipment sizing, selection, and procurement is in progress. Equilibrium data acquisition has been completed. Five component vapor-liquid equilibrium data for gas mixtures representative of BCR Bi-Gas and Exxon catalytic gasifier crude gases were measured. The experimental data agree very well with the equilibrium data estimated by computer calculations. Separation factors were determined for the binary systems carbon dioxide/hydrogen sulfide, carbon dioxide/carbonyl sulfide, carbon dioxide/ethane, carbon dioxide/ethylene, and carbon dioxide/methyl mercaptan. For each system, sharp separation was observed in one stage of crystallization. In the slurry pumping project the height of liquid leg between the free flashing surface and the pump centerline is being varied to determine the minimum suction head needed for pumping slurry. The pump in current use is a MICROPUMP gear pump. (ERA citation 08:003939)
Desc.: *Carbon dioxide; *Hydrogen sulfides; *Gases; *Fuel gas; Coal gasification; Removal; Vapors; Liquids; Equilibrium; Bi-gas process; Exxon gasification process; Dew point; Separation processes; Crystallization; Solids; Gas chromatography; Carbon oxysulfide; Slurries; Pumps; Ethane; Ethylene; Purification
Ident.: ERDA/010404; NTISDE
Sec. Head.: 13B (Mechanical, Industrial, Civil, and Marine Engineering--Civil Engineering); 68A (Environmental Pollution and Control--Air Pollution and Control)

Y006006 53 
956931 DE82021189
CNG Process, a New Approach to Physical-Absorption Acid-Gas Removal
Hise, R. E. ; Massey, L. G. ; Adler, R. J. ; Brosilow, C. B. ; Gardner, N. C.
CNG Research Co., Cleveland, OH.
Corp. Source Codes: 076952000; 9515518
Sponsor: Case Western Reserve Univ., Cleveland, OH.; Helipump, Inc., Brecksville, OH.; Department of Energy, Washington, DC.
Report No.: CONF-821106-7-DR 1982 19p
Annual meeting of heat transfer and energy conversion, Los Angeles, CA, USA, 14 Nov. 1982.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8308; NSA0700
Co. of Pub.: U. S.
Contract No.: AC21-80MC14399
The CNG acid gas removal process embodies three novel features: (1) scrubbing with liquid carbon dioxide to remove all sulfurous molecules and other trace contaminants; (2) triple-point crystallization of carbon dioxide to concentrate sulfurous molecules and produce pure carbon dioxide; and (3) absorption of carbon dioxide with a slurry of solid carbon dioxide in organic carrier liquid. The CNG process is discussed and contrasted with existing acid gas removal technology as represented by the Benfield, Rectisol, and Selexol acid gas removal processes. (ERA citation 07:062805)
Desc.: *Synthesis gas; Removal; Sulfur compounds; Desulfurization; Scrubbing; Carbon dioxide; Crystallization; Adsorption; Purification
Ident.: ERDA/090121; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 54 
946636 AD-A121 16/8
Application of Solidification Theory to Rapid Solidification Processing (Semi-annual technical rept. 1 Oct. 81-3 Mar 82)
Boettinger, W. J. ; Cahn, J. W. ; Coriell, S. R. ; Manning, J. R. ; Schaefer, R. J.
National Bureau of Standards, Washington, DC. National Measurement Lab.
Corp. Source Codes: 004692222; 387444
Sept. 82 39p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8305
Co. of Pub.: U. S.
Contract No.: ARPA Order-3751
The objective of this work is to develop guidelines based on kinetic and thermodynamic solidification theory for prediction and control of rapid solidification processes. In particular, segregation effects and rules governing the formation of equilibrium and non-equilibrium phases, including metallic glasses, will be investigated. Areas where significant improvements in alloy properties can be produced by rapid solidification will be emphasized. Significant accomplishments during the period were achieved in the following areas: extended Solid Solubilities -- for Production of Alloys with New Compositions and Phases; Interface Stability -- for Production of More Homogeneous Alloys; Interface Kinetics -- for Production of Alloys with Finer Segregation; Prevention of Cracking Caused by Residual Stress -- for Production of Alloys with Improved Surface Structures.
Desc.: *Solidification; *Processing; *Quick reaction; *Metals; *Glass; Crystal growth; Kinetic theory; Metalloids; Thermodynamics; Crystallization; Defects(Materials); Methodology; Metastable alloys; Nonequilibrium flow
Ident.: Metallic glasses; NTISDODXA
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 55 
943275 DE82903349
Deposit Control in Process-Cooling-Water Systems
Venkataramani, B.
Bhabha Atomic Research Centre, Bombay (India).
Corp. Source Codes: 004104000; 0807000
Report No.: BARC-1110 1981 43p
Portions of document are illegible.
Microfiche copies only. U.S. Sales Only.
Lang.: Eng.
NTIS Prices: MF A01
Jrnl Ann.: GRAI8303; NSA000
Co. of Pub.: India
In order to achieve efficient heat transfer in cooling water systems, it is essential to control the fouling of heat exchanger surfaces. Solubilities of scale-forming salts, their growth into crystals, and the nature of the surfaces play important role in the deposition phenomenon. Condensed phosphates, organic polymers and compounds like phosphonates are effective in controlling deposition of scale forming salts. The surface active agents inhibit crystal growth and modify the crystals of the scale forming salts, and thus prevent deposition of dense, uniformly structured crystalline mass on the heat transfer surface. Understanding the mechanism of biofouling is essential to control it by surface active agents. Certain measures taken in the plant, such as back flushing, to control scaling, sometimes may not be effective and can be detrimental to the system itself.
Desc.: *Thermal power plants; *Industrial plants; *Cooling systems Heat exchangers; Fouling; Deposits; Scale control
Ident.: *Foreign technology; ERDA/200101; NTISDEP
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 13A (Mechanical, Industrial, Civil, and Marine Engineering--Air Conditioning Heating, Lighting, and Ventilating); 97I (Energy--Electric Power Production); 94GE (Industrial and Mechanical Engineering--General)

Y006006 56 
931502 AD-A117 752/6
Growth of HgCdTe by Modified Molecular Beam Epitaxy (Semi-Annual technical rept. no. 5, 1 Sept. 81-28 Feb. 82)
Cheung, J. T.
Rockwell International, Thousand Oaks, CA. Science Center.
Corp. Source Codes: 052870003; 389949
Report No.: SC5202.17SA 15 Jun. 82 33p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8224
Co. of Pub.: U. S.
Contract No.: MDA903-79-C-0188; DARPA Order-3704
Films of Hg- x Cd x Te and ?nO can be formed by the LADA technique. Their results will be presented separately. HgO.7CdO.3Te films have specular surface morphology and sharp interfaces with a cross diffusion region of 1500 A. Electron mobility at 77K as high as 19, 000 sq cm/V-s was observed. SIMS profile analysis indicated large accumulation of impurities at the interface and near the surface, MIS devices were fabricated and their results will be presented. ?nO films can be formed by evaporating from ?nO powder pellets with a pulsed carbon dioxide laser (lambda =10.6 micrometers). Films from 0.1 to 1.0 micrometers thick were deposited on various substrates in a wide range of temperatures. At substrate temperatures above 250 C, the deposited films are colorless and transparent. The surface is smooth with no discernible features, even under 1000x magnification. The films are highly oriented along the C-axis. X-ray diffraction patterns indicate a single (0001) peak with a half width (2 theta) about 0.3-0.35 degrees. This is comparable to the ?nO films deposited by the state-of-the-art magnetron sputtering technique.
Desc.: *Epitaxial growth; *Cadmium tellurides; Crystal growth Laser beams; Zinc oxides; Thin films; Evaporation; Morphology; Surface properties; Profiles; Electron mobility
Ident.: *Molecular beam epitaxy; *Mercury cadmium tellurides; NTISDODXA
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 57 
927395 DE82007361
Inertial Fusion Program. Progress Report, July 1-December 31, 1979
Skoberne, F.
Los Alamos National Lab., NM.
Corp. Source Codes: 072735000; 9512470
Sponsor: Department of Energy, Washington, DC.
Report No.: LA-8511-PR
Oct. 81 176p
Lang.: Eng.
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI8219
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-36
Progress in the development of high-energy short-pulse CO sub 2 laser systems for fusion research is reported. Improvements in the Los Alamos National Laboratory eight-beam Helios systems are described. These improvements increased the reliability of the laser and permitted the firing of 290 shots, most of which delivered energies of approximately 8 kJ to the target. Modifications to Gemini are outlined, including the installation of a new target-insertion mechanism. The redirection of the Antares program is discussed in detail, which will achieve a total energy of approximately 40 kJ with two beams. This redirection will bring Antares on-line almost two years earlier than was possible with the full six-beam system, although at a lower energy. Experiments with isentropically imploded Sirius-B targets are discussed, and x-ray radiation-loss data from gold microballoons are presented, which show that these results are essentially identical with those obtained at glass-laser wavelengths. Significant progress in characterizing laser fusion targets is reported. New processes for fabricating glass microballoon x-ray diagnostic targets, the application of high-quality metallic coatings, and the deposition of thick plastic coatings are described. Results in the development of x-ray diagnostics are reported, and research in the Los Alamos heavy-ion fusion program is summarized. Results of investigations of phase-conjugation research of gaseous saturable absorbers and of the use of alkali-halide crystals in a new class of saturable absorbers are summarized. New containment-vessel concepts for Inertial Confinement Fusion reactors are discussed, and results of a scoping study of four fusion-fission hybrid concepts are presented.
Desc.: *Laser fusion reactors; *Carbon dioxide lasers; Research programs; Helios facility; Antares facility; Laser targets; X-ray spectra; Plasma diagnostics; Laser-produced plasma; Coatings
Ident.: ERDA/700208; NTISDE
Sec. Head.: 18A (Nuclear Science and Technology--Fusion Devices (Thermonuclear)); 20E (Physics--Masers and Lasers); 77A (Nuclear Science and Technology--Fusion Devices (Thermonuclear))

Y006006 58 
924040 AD-A115 273/5
Lateral Seeding of Silicon-on-Insulator (Final rept. 1 Jul.-31 Dec 81)
Lam, H. W. ; Pinizzotto, R. F.
Texas Instruments, Inc., Dallas. Central Research Labs.
Corp. Source Codes: 013046005; 403833
Report No.: TI-08-82-17
Apr. 82 36p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8220
Co. of Pub.: U. S.
Contract No.: N00014-81-C-0461
A micro-zone melting growth process using a scanning line-shaped graphite heater has been developed to produce (100) silicon-on-insulator (SOI) material over a three inch wafer. Very low angle grain boundaries (less than 0.3 deg) still exist extensively in the material. A 2 micrometer thick layer of plasma CVD oxide deposited from N20 and SiH4 has been found to be an effective capping structure in preventing the moisten silicon from beading up. A SiC coating on the top heating element is used to prevent carbon contamination of the recrystallized film. CMOS devices have been fabricated in the recrystallized SOI material. Surface electron and surface hole mobility values of typically 600 sq. cm./V-s and 300 sq. cm/V-s, respectively, have been measured. The leakage current is uniformly low, typically in the 10 to the -13th power A/micrometer channel width range at VDS = 1 V. It has also been determined that the low angle grain boundaries do not have a primary effect on the carrier mobility. Furthermore, the problem of enhanced diffusion of arsenic along the grain boundaries is significant less severe in the present SOI material. The small protrusions found in the surface of the recrystallized film did not contribute to gate shorts in the devices measured. However, they may present a reliability problem. Attempts are underway to improve the process to eliminate the protrusions. (Author)
Desc.: *Grain boundaries; *Silicon; *Zone melting; *Crystal growth *Seeding; Processing; Graphite; Heating elements; Capping; Structures; Carrier mobility; Low angles; Melts; Arsenic; Diffusion; Carbon; Contamination; Width; Reliability
Ident.: SOI(Silicon on Insulator); NTISDODXA
Sec. Head.: 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industrial Processes); 20B (Physics--Crystallography); 94G (Industrial and Mechanical Engineering--Manufacturing Processes and Materials Handling); 46D (Physics--Solid State Physics)

Y006006 59 
919434 D82005280
Photo-Molecular Phenomena in Condensed Matter. Annual Progress Report, July 1, 1974-June 30, 1975
Jeffries, C. D.
California Univ., Berkeley. Dept. of Physics.
Corp. Source Codes: 005029107; 1100000
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/SF/00034-T13 1 Jul. 75 1p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8221; NSA0000
Co. of Pub.: U. S.
Contract No.: AM03-76SF00034
Research is summarized for electron-hole condensation in semiconductor materials. Topics covered include: Alfven wave resonance in Germanium; large drops in strain potential wells; photographs of large drops; mechanical plasma confinement; time-resolved studies of spatial distributions; droplet nucleation theory, surface energy; and far-infrared plasma absorption.
Desc.: *Germanium; *Semiconductor materials Electron-hole droplets ; Alfven waves; Solid-state plasma; Research programs; Electric fields; Strains
Ident.: ERDA/656001; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 60 
917119 DE82008793
Kinetics and Topochemistry of the Endothermic Solid-State Reaction of 2-(5-Cyanoetrazolaton) Pentaamine Cobalt(III) Perchlorate
Pickard, J. M. ; Back, P. S. ; Walters, R. R.
Mound Facility, Miamisburg, OH.
Corp. Source Codes: 057065000; 9506730
Sponsor: Department of Energy, Washington, DC.
Report No.: MLM-2909(OP); CONF-820809-0 1982 7p
International conference on thermal analysis, Kingston, Canada, 22 Aug. 1982.
Best available copy from document source. Available in microfiche only.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: MF A01
Jrnl Ann.: GRAI8222; NSA0000
Co. of Pub.: U. S.
Contract No.: AC04-76DP00053
The thermal reactivity curve of the inorganic explosive 2-(5-cyanoetrazolaton pentaamine cobalt(III) perchlorate, CP, as determined by dynamic differential scanning calorimetry (DSC) is characterized by a solid-state endothermic transition partially overlapped by a more violent exothermic decomposition. This discusses the kinetics of the endothermic transition of CP determined under inert and reactive atmospheres and supplemental data obtained by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoacoustical spectroscopy (PAS). The kinetic data are discussed in light of possible solid-state reaction mechanisms. The consistency between theory and experiment, while not conclusive, suggests that nucleus growth may involve a concerted loss of the nitrile moiety and elimination of either NH sub 3 or H sub 2 O. Such an effect would certainly be consistent with a random surface nucleation mechanism and would account for the spectra perturbations observed in the IR spectra.
Desc.: *Cobalt complexes; *Nitriles; Chemical explosives; Amines; Perchlorates; Azoles; Chemical reaction kinetics; Thermodynamics; X-ray diffraction; Scanning electron microscopy; Photoacoustic spectroscopy; Thermal gravimetric analysis; Experimental data; Ligands; Time dependence; Calorimetry; Arson; Ammonia; Air; Helium; Activation energy; Infrared spectra
Ident.: ERDA/450100; NTISDE
Sec. Head.: 19A (Ordnance--Ammunition, Explosives, and Pyrotechnics); 7D (Chemistry--Physical Chemistry); 7A (Ordnance--Ammunition, Explosives, and Pyrotechnics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 61 
916793 AD-B023 408/8
Laser Window Materials and Optical Coating Science (Semiannual technical rept. no. 1, 19 Sept. 76-19 Mar 77)
Braunstein, Morris ; D'Haenens, I. J. ; Allen, S. D. ; Harrington, James A. ; Pedinoff, M. E.
Hughes Research Labs., Malibu, CA.
Corp. Source Codes: 012375000; 172600
Report No.: RADC-TR-77-286
Aug. 77 143p
Distribution limitation now removed.
Lang.: Eng.
NTIS Prices: PC A07/MF A01
Jrnl Ann.: GRAI8222
Co. of Pub.: U. S.
Contract No.: F19628-76-C-0309; ARPA Order-2415
The tasks under this program are organized into seven broad categories. First, the application of reactive atmosphere processing (RAP) chemistry techniques to the growth, polishing, grain growth stabilization, and AR coating passivation of poly- and single-crystal KC1 and of alkaline earth fluorides. Second, the application of press forging to RAP materials to enhance yield strength, and a study of the grain growth kinetics in such press forged materials. Third, a study of chemical-mechanical surface finishing techniques for the preparation of laser window materials. Fourth, a characterization of substrate and coating surface finishing using (1) scanning electron microscopy and X-ray diffraction, and (2) structural and chemical analysis using low-energy electron diffraction (LEED), Auge electron spectroscopy (AES), and microprobe techniques. Fifth, a comparison of AR coatings prepared under ultrahigh vacuum (less than ten to the minus 9th power Torr) and conventional ten to the minus 6th power to ten to the minus 9th power Torr) conditions and by ion beam sputtering techniques. Sixth, an optical evaluation of the AR-coated windows using infrared spectrophotometry, absorption calorimetry, ellipsometry, and scattering measurements. And seventh, a selection of substrate materials and AR-coated window specimens for study of laser damage mechanisms.
Desc.: *Infrared windows; *Infrared lasers; *Optical coatings; *Surface finishing; Surface properties; Antireflection coatings; Thin films ; Calorimetry; Ellipsometers; Light modulators; Potassium chloride; Correlation techniques; Alkaline earth compounds; Press forging; Carbon dioxide lasers; Carbon monoxide lasers; Crystal growth; Single crystals; Polycrystalline
Ident.: NTISDODXD
Sec. Head.: 20E (Physics--Masers and Lasers); 17E (Navigation, Communications Detection, and Countermeasures--Infrared and Ultraviolet Detection); 11C (Materials--Coatings, Colorants, and Finishes)

Y006006 62 
915051 N82-27159/4
Modeling of Thin-Film GaAs Growth (Progress Report, 30 Jan. 1 81 - 16 Jun. 1982)
Heinbockel, J. H.
Old Dominion Univ., Norfolk, VA. Dept. of Mathematical Sciences.
Corp. Source Codes: 045163014; OS853217
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NASA-CR-169028; NAS 1.26:169028
Jun. 82 20p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8223; STAR2017
Co. of Pub.: U. S.
Contract No.: NAG1-148
A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms on a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative.
Desc.: *Computer programs; *Crystal growth; *Gallium arsenides; *Mathematical models; *Thin films; Activation energy; Computer graphics; Flow charts; Heat of vaporization; Nucleation; Potential energy
Ident.: NTISNASA
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 63 
912561 PB82-199340
Surface Stress and the Chemical Equilibrium of Small Crystals (Final rept.)
Cahn, J. W. ; Larche, F.
National Bureau of Standards, Washington, DC.
Corp. Source Codes: 004692000
Sponsor: Montpellier-2 Univ. (France). Laboratoire d'Hydrogogie Mathematique. 1982 6p
Pub. in Ata. Metallurgica Jnl. 30, p51-56 1982.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8217
Co. of Pub.: U. S.
The equilibria of small solid particles embedded in a solid matrix are considered. Three interface quantities of significance, an interfacial free energy representing the work of creating the interface and two interfacial stresses. One represents the work of stretching the interface while the other represents the work of stretching one crystal holding the other fixed and hereby altering the structure of the interface. The isotropic case is developed in detail. Several new effects result from the partial accommodation in the matrix of the stress field due to interfacial stress. An elastic accommodation factor modifies the capillary contribution to the pressure in the particle, the chemical potentials and the Gibbs-Thomson effect. Diffusion potentials but not chemical potentials are constant throughout the system. Coherent and incoherent nucleation is re-examined.
Desc.: *Chemical equilibrium; *Surfaces; *Crystals; Thermodynamics Reprints
Ident.: NTISCOMNBS
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 64 
906355 AD-A112 842/0
Metal-Semiconductor Reaction Phenomena and Microstructural Investigations of Laser Induced Regrowth of Silicon on Insulators (Final rept. Jan 79-Jan 82)
Magee, T. J. ; Leung, C. ; Ormond, R. D. ; Armistead, R. A.
Advanced Research and Applications Corp., Sunnyvale, CA.
Corp. Source Codes: 060237000; 393004
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARACOR-FR-82-37-0; ARO-15999.6-MS
Jan 82 50p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI815
Co. of Pub.: U. S.
Contract No.: DAAG29-79-C-0014
Solid phase regrowth of Silicon-in-sapphire has been investigated in the Si (amorphous)/Al(poly) Al2O3 (crystal) system. Using transmission electron microscopy, scanning electron microscopy, Auger electron spectroscopy and Hall effect measurements, it has been shown that Si is transported through an Al film at 550 C to produce p-type Si films on the sapphire substrate. The growth process has been shown to be initiated at Si nucleation sites on the substrate. These sites expand by mass accretion forming island structures that coalesce to yield continuous large grained polycrystalline Si films on the sapphire surface. The defect structure in CVD Si layers on sapphire were investigated before and after scanning laser annealing. Prior to laser annealing, the films were characterized by the presence of stacking faults, twining zones and dislocation lines producing large regions of high disorder. Subsequent to laser annealing under conditions to produce total melting of the Si layers it was shown that liquid phase epitaxial regrowth occurred resulting in regions of defect-free Si and a total absence of twining regions. Single-crystal Si sheets (0.2 micrometer in thickness) of (100) orientation and of maximum dimensions, 100 x 10, 000 micrometer, have been recrystallized by cw laser annealing of polycrystalline Si films deposited over parallel 3- micrometer-wide SiO2 bars adjacent to 3- micrometer Si (100) substrate openings. The recrystallized films are free of cracks, mosaic structure, stacking faults or excessive mass flow at the oxide edges.
Desc.: *Metal oxide semiconductors; *laser beams; *Microstructure; *Epitaxial growth; Continuous wave lasers; Insulation; Silicon; Reaction kinetics; Annealing; auger electron spectroscopy; Defects(Materials); Layers; Cracks; Hall effect; Optical scanning; Measurement; Electronic scanners; Electron microscopy; Sapphire; Mosaics(Detectors); Substrates
Ident.: Laser induced growth; P-type silicon films; Transmission electron microscopy; Liquid phase epitaxy; Solid phase epitaxy; Spreading epitaxy; NTISDODXA; NTISDODA
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 65 
896583 DE82002755
Photovoltaic and Structural Properties of a-Si:H Thin Films. Fifth Quarterly Technical Report, June 1-August 31, 1981
Messier, R.
Pennsylvania State Univ., University Park. Materials Research Lab.
Corp. Source Codes: 009222082; 5141000
Sponsor: Department of Energy, Washington, DC.
Report No.: SERI/PR-9227-1-T1
Nov. 81 21p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8211; NSA0700
Co. of Pub.: U. S.
Contract No.: AC02-77CH00178
The physical structures of a vapor-deposited thin film is related primarily to adatom mobility, adatom species, and bombardment effects at the growing film surface. We have shown for rf-sputtered films of a-Si:H that bombardment effects are the dominant factor. For floating film potentials greater than approximately -20V, Ar exp + -ion bombardment results in a drastic decrease in observable film microstructure. Although still not clearly resolved, it appears that microstructure cannot be completely eliminated under the range of conditions possible for a-Si:H growth. Of course, adatom mobility and possibly adatom species are changed under conditions of significant bombardment. Considering the case in which microstructure is resolvable in 1 mu m thick films, we studied the evolution of film physical structure in detail. Hydrogenated a-Si films prepared by rf-sputtering were investigated as a function of film thickness (150A to 10 mu m) and substrate type and roughness. The physical structure was shown to evolve with film thickness as a result of the nucleation, growth, and incomplete coalescence of island-like structures which leads to a supernetwork of larger voids. At least four different supernetwork structures of increasing size were identified in the present study. The structural evolution was essentially unaffected by substrate type for this material in which low adatom mobility is the controlling factor. This evolutionary model is expected to have general application to all vapor deposition processes including glow discharge decomposition of silane. (ERA citation 07:003669)
Desc.: *Silicon; Amorphous state; Argon ions; Collisions; Crystal growth; Electric potential; Films; Hydrogen additions; Microstructure; Roughness; Sputtering; Substrates
Ident.: ERDA/140501; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 97N (Energy--Solar Energy); 46D (Physics--Solid State Physics)

Y006006 66 
889070 A-891 555/5
High Power Infrared Laser Window Materials (LQ-10 Program) (Quarterly progress rept. no. 3, 1 Jul.-3 Sept. 71)
Air Force Cambridge Research Labs., Hanscom AFB, MA.
Corp. Source Codes: 046507000; 011800
Report No.: AFCRL-SR-125; AFCRL-71-0568
30 Nov. 71 42p
Distribution limitation now removed.
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8208
Co. of Pub.: U. S.
Contract No.: F-5620; AF-3326; 562009; 332605
Progress is presented of research underway on the identification, preparation, and evaluation of materials with properties suitable for use as high power laser windows. Results are given on the growth of selected halides, III-V, and II-VI crystals, measurements of physical properties, surface-damage studies, and related measurements into laser beam distortion, optical absorption, and refractive index. Also, a diffraction theory of aberrations is introduced that provides a detailed, three-dimensional intensity distribution in all of space and for all time, as well as the ability to formulate lensing criteria. (Author)
Desc.: *Infrared lasers; *Infrared windows ; *Infrared optical materials; Infrared windows ; Infrared radiation; Halides; Single crystals Refractive index; Surface properties; Distortion; Absorption; Diffraction analysis; Intensity; Gallium arsenides; Power; Phase diagrams; Phosphides; Tellurides; Gallium compounds; Cadmium compounds; Carbon dioxide; Crystal growth; Crystal defects; Thermal conductivity
Ident.: Group 2 elements; Group 3 elements; Group 4 elements; Group 6 elements; Group 5 elements; NTISDODXD
Sec. Head.: 20E (Physics--Masers and Lasers); 17E (Navigation, Communications Detection, and Countermeasures--Infrared and Ultraviolet Detection); 20F (Physics--Optics)

Y006006 67 
885899 AD-A107 686/8
Research in LPE of Doped LiNbO3 and LiTaO3 Thin Films (Final rept. 1 Apr. 77-31 Mar 81)
Neurgaonkar, R. R.
Rockwell International, Thousand Oaks, CA. Electronics Research Center.
Corp. Source Codes: 052870004; 411391
Sponsor: Air Force Office of Scientific Research, Bolling AFB, DC.
Report No.: ERC41004.11FR; AFOSR-TR-81-0721
Jun. 81 55p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8207
Co. of Pub.: U. S.
Contract No.: F49620-77-C-0081; 2306; B1
The crystal chemical approach has been shown to be successful in improving the temperature stability of ferroelectric LiNbO3 phase. LiNbO3 films doped with cations that are larger than Li+ and Nb5+, e.g., Na+, Na+ + Ta5+, Ag+, Co2+ + Zr4+, etc., have successfully been grown by the liquid phase epitaxial (LPE) technique using the vanadium containing flux systems. X-ray diffraction studies indicate that the films grown from the vanadium containing fluxes have a high single crystallinity with good epitaxy. To date, the temperature coefficient of SAW velocity was reduced by 40%; this translates into 40% improvement in the temperature stability of LiNbO3 SAW devices. This is a significant result in the present work and opens a new interest in the LiNbO3 family for SAW application. By using such a novel approach, it should be possible to improve the temperature stability of other important structural families such as quartz or tungsten bronze structural family compositions.
Desc.: *Epitaxial growth; *Lithium compounds; *Liquid phases; *Doping; Single crystals; Thin films; Niobium compounds; Tantalites; Acoustic waves; Surfaces; Thermal stability; Sodium; Ions; Zirconium; Temperature; Coefficients; Surface acoustic wave devices
Ident.: Crystal chemistry; Ferroelectricity; NTISDODXA; NTISDODAF
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 68 
882658 N82-10497/7
Large Area Silicon Sheet by EFG (Quarterly Report, 1 Apr. - 30 Jun. 1981)
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; M4774112
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NASA-CR-164881; DOE/JPL-954355-8/18 11 Sept. 81 50p
Sponsored by NASA and Doe Prepared for JPL, Pasadena.
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8205; STAR2001
Co. of Pub.: U. S.
Contract No.: JPL954355
The influence of parameters such as CO2 concentration, gas flow patterns, quartz in the bulk melt, melt doping level and growth speed on ribbon properties was examined for 10 cm wide ribbon. Ribbon quality is optimized for ambient CO2 in argon concentrations in the range from 1000 to 5000 ppm. Cell performance degrades at CO2 concentrations above 5000 ppm and IR interstitial oxygen levels decrease. These experiments were done primarily at a growth speed of 3.5 cm/minute. Cartridge parameters influencing the ribbon thickness were studied and thickness uniformity at 200 micrometers (8 mils) has been improved. Growth stability at the target speed of 4.0 cm/minute was improved significantly.
Desc.: *Carbon dioxide concentration; *Crystal growth; *Fabrication ; *Ribbons; *Silicon; *Solar cells; Flow distribution; Gas flow; Low cost; Solar arrays; Thin films
Ident.: NTISNASA
Sec. Head.: 7A (Chemistry--Chemical Engineering); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 69 
879753 N81-33422/9
A Molecular Model for Ice Nucleation and Growth (Final Technical Report, 15 Dec. 1977 - 30 Jun. 1981)
Missouri Univ.-Rolla. Graduate Center for Cloud Physics Research.
Corp. Source Codes: 049968026; M3975057
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NASA-CR-161851
Aug. 81 53p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8204; STAR1924
Co. of Pub.: U. S.
Contract No.: NAS8-31150
No abstract available.
Desc.: *Ice formation; *Molecular interactions; Quantum mechanics; Clathrates; Crystal growth; Dynamic models; ice nuclei; Liquid-solid interfaces; Molecular energy levels; Surface reactions
Ident.: NTISNASA
Sec. Head.: 4A (Atmospheric Sciences--Atmospheric Physics); 7D (Chemistry--Physical Chemistry); 55E (Atmospheric Sciences--Physical Meteorology); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 70 
879240 DE81029907
Large Area Silicon Sheet by EFG. Second Quarterly Report, April 1, 1981-June 30, 1981
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; 9501141
Sponsor: Department of Energy, Washington, DC.
Report No.: DOE/JPL/954355-81-18 11 Sept. 81 50p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8204; NSA0600
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954355
The influence of parameters such as CO sub 2 concentration, gas flow patterns, quartz in the bulk melt, melt doping level and growth speed on ribbon properties has been examined for 10 cm wide ribbon. One of the more important findings is that ribbon quality is optimized for ambient CO sub 2 in argon concentrations in the range from 1000 to 5000 ppM. Cell performance degrades at CO sub 2 concentrations above 500 ppM and IR interstitial oxygen levels decrease. Cartridge parameters influencing the ribbon thickness have been studied and thickness uniformity at 200 micrometers has been improved. Growth stability at the target speed of 4.0 cm/minute has also been improved significantly. A successful demonstration of interface ambient control has been carried out. Ribbon characterization has shown that SPV diffusion lengths and cell performance have improved with CO sub 2 introduced into the multiple furnace environment. The construction of a new multiple ribbon furnace for growth of four 10 cm wide ribbons is proceeding. A new 1 cm cartridge design has been completed, primarily to incorporate modifications in the post-growth temperatures profile, and fabrication of components has been started. (ERA citation 06:033110)
Desc.: *Silicon; Carbon dioxide; Crystal doping; Crystal growth; Design; Efg method; Furnaces; Production; Quartz; Silicon solar cells; Stability; Thermal stresses; Thickness
Ident.: ERDA/140501; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 7A (Chemistry--Chemical Engineering); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 97N (Energy--Solar Energy)

Y006006 71 
876092 AD-A105 223/2
Surface Structure and Growth of Crystalline Materials (Final rept. 15 Nov. 79-14 Nov. 80)
Landua, David P.
Georgia Univ. Research Foundation, Inc., Athens. Boyd Graduate Studies Research Center.
Corp. Source Codes: 071618001; 41250
Sponsor: Air Force Office of Scientific Research, Bolling AFB, DC.
Report No.: AFOSR-TR-81-0621 14 Jul. 84 7p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8203
Co. of Pub.: U. S.
Contract No.: AFOSR-80-0053; 2301; A5
Computer simulation methods have been used to study spiral crystal growth from multiple dislocation edges. The results showed that after the spiral arms had all interacted once growth proceeded in agreement with the Burton-Cabrera-Frank continuum theory. For small Frank-Read dislocations the existence of a nucleation barrier was shown. Computer simulation studies of simple models of magnetic (binary alloy) lattices with exposed surfaces were also carried out. Surface order-disorder and order-order transitions were studied as a function coupling both below and above the bulk transition surface. (Author)
Desc.: *Crystals; *Crystal growth; *Computerized simulation; Nucleation; Models; Surfaces; Coupling (Interaction); Binary alloys; Dislocations; Edges; Methodology; Continuum mechanics; Theory
Ident.: Spiral arms; NTISDODXA; NTISDODAF
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 72 
876067 AD-A105 198/6
Silicon Quality: A Consideration for VHSI Circuit Development (Final rept. 15 Dec 79-15 Sept. 81)
Magee, T. J. ; Leung, C. ; Ormond, R. ; Palkuti, L. J.
Advanced Research and Applications Corp., Sunnyvale, CA.
Corp. Source Codes: 060237000; 393004
Report No.: ARACOR-FR-81-53
28 Sept. 81 89p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8203
Co. of Pub.: U. S.
Contract No.: N00014-80-C-071
A detailed evaluation of the quality of silicon wafers from representative domestic and foreign vendors was made. To avoid pre-selection of wafers by vendors, material was obtained directly from device manufacturers and therefore represents a statistical sampling of Si material as currently being used in production-line processing. The results of this study have shown extreme batch-to-batch variability, lack of control in material quality and, in many cases, unacceptable levels of defects in silicon wafers used in manufacturing. The development of front-and-back-surface laser-gettering procedures for improving quality is reported and newly developed techniques for stabilizing back-surface damage, using the enhanced diffusion of oxygen, are discusses. (Author)
Desc.: *Processing; *Production; *Wafers; *Silicon; *Statistical analysis; Test and evaluation; Quality; Circuits; Damage; Stabilization; Vendors; Semiconductors; Research management; Crystal growth; Defects (Materials); Oxygen; Diffusion; Infrared radiation
Ident.: Gettering; Enhance diffusion; Infrared adsorption; Wafer warpage; NTISDODXA
Sec. Head.: 9A (Electronics and Electrical Engineering--Components) ; 49H (Electrotechnology--Semiconductor Devices)

Y006006 73 
871920 N81-29525/5
Schottky Barrier Solar Cell (Patent)
Stirn, R. J. ; Yeh, Y. C. M.
National Aeronautics and Space Administration, Pasadena, CA. Pasadena Office
Corp. Source Codes: 064668001; ND894694
Report No.: PATENT-4 278 830; PAT-APPL-6-093 714
Filed 13 Nov. 79 Patented 14 Jul. 81 10p
Supersedes PAT-APPL-6-093 714, N80-12549 (18 - 03, p 0352). Sponsored by NASA.
This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of patent available Commissioner of Patents, Washington, DC. 20231 $0.50.
Lang.: Eng.
Doc. Type: Patent
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8201; STAR1920
Co. of Pub.: U. S.
A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.
Desc.: *Patents; *Barrier layers; *Metal oxide semiconductors; *Schottky diodes; *Solar cells; Gallium arsenides; Germanium; Oxide films; Semiconductors (Materials)
Ident.: PAT-CL-136-255; PAT-CL-136-258; PAT-CL-136-262; PAT-CL-35-15; NTISGPNASA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 90F (Government Inventions For Licensing--Electrotechnology); 97N (Energy--Solar Energy)

Y006006 74 
862418 AD-A101 882/9
Thermodynamic Theory of Size Dependence of Melting Temperature in Metals
Couchman, P. R. ; Jesser, W. A.
Virginia Univ., Charlottesville. Dept. of Materials Science.
Corp. Source Codes: 015207011; 401761
Sponsor: Army Research Office, Research Triangle Park, NC.
Report No.: ARO-14519.3-MS
3 May 77 4p
Pub. in Nature, v269 n5628 p481-483, 6 Oct. 77 (No copies furnished by DTIC/NTIS).
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: Not available NTIS
Jrnl Ann.: GRAI8124
Co. of Pub.: U. S.
Contract No.: DAAG29-79-C-0115
No abstract available.
Desc.: *Metals; *Thermodynamic properties; *Melting point; *Particle size; Surface reactions; Interfacial tension; Phase transformations; Solid phases; Liquid phases; Nucleation; Growth (General); Chemical equilibrium; Theory; Reprints
Ident.: NTISDODXR; NTISDODXR; NTISDODA
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 75
58428 DOE/JPL/954355-81-17
Large-Area Silicon Sheet by EFG. First Quarterly Report, January 1, 1981-March 31, 1981
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; 9501141
Sponsor: Department of Energy, Washington, DC.
29 May 81 43p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8122; NSA0600
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954355
A multiple growth run with three 10 cm cartridges was carried out with the best throughput rates and time percentage of simultaneous three-ribbon growth achieved to date in this system. Growth speeds were between 3.2 and 3.6 cm/minute on all three cartridges and simultaneous full-width growth of three ribbons was achieved 47% of the time over the eight-hour duration of the experiment. Improvements in instrumentation and in the main zone temperature uniformity have been two factors that have led to more reproducible growth conditions in the multiple ribbon furnace. Factors influencing ribbon quality are being investigated through the study of the effect of ambient gas species and concentrations on material properties. Growth of ribbon with the cold shoes characteristic of the high-speed systems has shown that the properties of this ribbon respond to ambient changes in much the same way as when no cold shoes are present. The best cell efficiencies attained for 10 cm wide ribbon grown with cold shoes are still below those obtained without cold shoes (10 to 11% versus 12 to 13%, respectively). It has also been shown in these experiments that meniscus CO sub 2 and quartz introduced in the melt (contained in graphite crucibles) are equivalent in improving the electronic quality of the ribbon in these systems. Development of a system to grow 10 cm wide ribbon in the speed range from 3 to 4 cm/minute without the use of the conventional cold shoes is underway. Work on building a new multiple furnace for growth of four 10 cm wide ribbons has been started. (ERA citation 06: 023272)
Desc.: *Silicon; Carbon dioxide; Controlled atmospheres; Crystal growth; Efficiency; Efg method; Furnaces; Quartz; Silicon solar cells; Temperature control
Ident.: ERDA/140501; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 97N (Energy--Solar Energy)

Y006006 76 
857855 AD-A101 173/3
The Effects of Ion Implantation on Friction and Wear of Metals (Progress rept. Jan 80-Apr. 81)
Suh, Nam P. ; Shepard, Sharon R.
Massachusetts Inst. of Tech., Cambridge. Lab. for Mfg. and Productivity.
Corp. Source Codes: 001450249; 410897
May 81 185p
Lang.: Eng.
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI8122
Co. of Pub.: U. S.
Contract No.: N00014-80-C-255
The effect of ion implantation on the friction and wear behavior of metals was investigated. Experiments were conducted with iron, titanium, and copper implanted with nitrogen ions, iron implanted with aluminum ions, and copper implanted with zinc ions. The significant reduction in friction and wear of the iron and titanium systems is attributed to a hard layer formed during the ion implantation process. This hard layer minimizes plowing and subsurface deformation and hence reduces the delamination wear process, i.e. crack nucleation, crack propagation, and the formation of delamination wear sheets. A finite element model of an elastic semi-infinite solid under the contact of a stationary rigid asperity showed that the hard layer does not change the subsurface stress distribution by supporting the load, but rather that this thin layer decreases the plowing component of friction. The model predicts that this decrease in the friction coefficient in turn, substantially reduces subsurface deformation and thus wear. The implanted copper specimens which did not appear to have a hard surface layer showed little improvement in their tribological behavior over the unimplanted copper.
Desc.: *Metals; *Ion implantation; *Friction; *Wear; Iron Titanium ; Copper; Surface finishing; Hardening; Layers; Wear resistance; Sliding friction; Stress concentration; Subsurface; Deformation
Ident.: NTISDODXA; NTISDODXA
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 77 
855957 ONWI-214
Desiccant Materials Screening for Backfill in a Salt Repository
Simpson, D. R.
Lehigh Univ., Bethlehem, PA.
Corp. Source Codes: 015988000; 3705000
Sponsor: Department of Energy, Washington, DC.
Oct. 80 98p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8121; NSA0600
Co. of Pub.: U. S.
Contract No.: AC06-76RL01830
Maintaining an anhydrous environment around nuclear waste stored in a salt repository in a concern which can be alleviated by using a desiccant material for backfilling. Such a desiccant should desiccate a brine yet be non deliquescent, the hydrated product should have moderate thermal stability, and the desiccant should have a high capacity and be readily available. From a literature search MgO and CaO were identified for detailed study. These oxides, and an intimate mixture of the two obtained by calcining dolomite, were used in experiments to further determine their suitability. They proved to be excellent desiccants with a high water capacity. The hydrates of both have moderate thermal stability and a high water content. Both MgO and CaO react in an alkaline chloride brine forming oxychloride compounds with different waters of crystallization. Some of these compounds are the Sorel Cements. CaO hydrates to Ca (OH) sub 2 which carbonates with CO sub 2 in air to form CaCO sub 3 and release the hydrated water. Thus the intimate mixture of CaO and MgO from calcined dolomite may serve as a desiccant and remove CO sub 2 from the repository atmosphere. (ERA citation 06: 019869)
Desc.: *Calcium oxides; *Desiccants; *Dolomite; *Magnesium oxides; *Radioactive waste disposal; *Radioactive waste facilities; Backfilling; Brines; Calcination; Calcium carbonates; Carbon dioxide; Chemical reactions ; Comparative evaluations; Hydrates; Salt deposits; Underground disposal; Water
Ident.: ERDA/052002; NTISDE; NTISDE
Sec. Head.: 18G (Nuclear Science and Technology--Radioactive Wastes and Fission Products); 77G (Nuclear Science and Technology--Radioactive Wastes and Radioactivity)

Y006006 78 
852384 AD-A099 917/7
Preliminary Reports, Memoranda and Technical Notes of the Materials Research Council Summer Conference La Jolla, California
Sinnott, Mauirce J.
Michigan Univ., Ann Arbor. Col. of Engineering.
Corp. Source Codes: 002797145; 228650
Report No.: 018324
Jul. 80 451p
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A20/MF A01
Jrnl Ann.: GRAI8120
Co. of Pub.: U. S.
Contract No.: MDA903-80-C-0505
Contents: Advanced Cruise Missile Engines from Coated Carbon/Carbon Composites; Comments on Carbon Engine; Oxidation and Growth Mechanisms Relevant to Semiconductor Electronics; Growth of Single Crystal Silicon on Amorphous Substrates; Preparation and Properties of HgCdTe; The Ledge Model for Oxidation of Silicon; Some Comments on Possible Mechanisms for Graphoepitaxy; Grapho-epitaxy and the Possible Effects of Stress; Report on Acoustic Emission Workshop; A Polymer Material - Composite Neutron Detectors Proposal for a Solid State Neutron Detector Low-Flux Thermal Neutron Detectors Based on Solid Boron; Adiabatic Flows in Fluids and Solids; Fracture Workshop; Force Laws; High Temperature Failure; Chemical Effects in Fractures Lattice Simulations of Cracks; Plastic Shielding of Sharp Crack Tips; Detection and Identification of CW Agents; Detection and Evaluation of Small Flaws in Optical Fibers; Fracture Toughness and Tensile Strength of Fero CTE and Other Ceramic Particle - Ductile Matrix; Improved Gun Propellants; Constraints on the Diffusive Cavitation of Isolated Grain Boundary Facets in Creeping Polycrystals; Cavity Nucleation during High Temperature Creep; Interactions of Pure Metals with Water; Gaseous Molecules with Very High Molecular Weights; Acoustic Scattering From Surface Cracks in Ceramics: Implications for Failure Prediction; Creep Fracture in Ceramics; Creep Cavitation of Grain Interfaces; and One Dimensional Melt Subjected to Rapid Quench.
Desc.: *Reports; *Symposia; Materials; Research management; Workshops; Composite materials; Engines; Semiconductor devices; Crystallography; Acoustic emissions; Polymers; Detectors; Fluid dynamics; Fracture (Mechanics); Chemical warfare agents; Gun propellants; Reaction kinetics; Ceramic materials; Physicochemical properties; Mechanical properties
Ident.: NTISDODXA; NTISDODXA
Sec. Head.: 5A (Behavioral and Social Sciences--Administration and Management; 70E (Administration and Management--Research Program Administration and Technology Transfer)

Y006006 79 
850354 DOE/SF/01929-T2
Improved, Inexpensive Solar-Energy-Heating Heat Reservoir. Final Report
Garrett Energy Research and Engineering Co., Inc., Ojai, CA.
Corp. Source Codes: 063117000; 9509048
Sponsor: Department of Energy, Washington, DC.
7 Feb. 79 73p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI119; NSA0600
Co. of Pub.: U. S.
Contract No.: FG03-78SF01929
The use of a salt hydrate, sodium sulfate decahydrate (glauber salt) to increase the heat storage capacity of a solar space heating system was studied. The rheological properties of the solids slurry was altered by modifying the crystal habit of glauber salt so as to form small chunky crystals and by using a viscosity modifier. Various additives to modify the crystal form habit were found; and though none were completely successful under pilot plant conditions, dodecylamine Hgl and Monsanto request were quite effective in the laboratory. Additional screening studies are required. An alginate viscosity modifier altered the surface tension of the slurry so as to prevent plugging and maintain a pumpable slurry. The slurry was contacted with air in a direct contact heat transfer column. The efficiency of the heat transfer decreased as the viscosity of the slurry increased. However, this is not a limiting factor and air temperatures of 80 to 82 exp 0 F can be achieved. The slurry was found to be suitable for a radiant heating system and could be quite economically effective immediately. The storage capacity with a glauber salt slurry is about twice that of water with a potential of three times with improvement. A more important aspect of using the slurry is the increase in collector efficiency due to the decreased storage temperature. This could have the effect of halving the requires collector area. (ERA citation 06: 018488)
Desc.: *Sodium sulfates; *Solar heating systems; Additives Alginates; Bench-scale experiments; Crystal growth; Crystal structure; Crystallization; Direct contact heat exchangers; Efficiency; Experimental data; Flow rate; Heat transfer; Latent heat storage; Nucleation; Rheology; Slurries; Solar collectors; Specific heat; Surface tension; Viscosity
Ident.: ERDA/142000; ERDA/250600; NTISDE; NTISDE 
Sec. Head.: 10C (Energy Conversion (Non-propulsive)--Energy Storage); 97N (Energy--Solar Energy)

Y006006 80 
848035 N81-22951/0
Method for Horizontally Growing Ribbon Crystal
Kudo, B.
National Aeronautics and Space Administration, Washington, DC.
Corp. Source Codes: 011249000; NC452981
Report No.: NASA-TM-75809
Jun. 10 14p
Trans. Into Eng. from Japanese Patent No. Sho 52-15485 (Appl. No. 50-91099, 5 Jul. 1975) p 437-441. Trans. By Scientific Translation Service, Santa Barbara, Calif. Original Document Prepared by Toyo Silicone CO., LTD., Tokyo.
Lang.: Eng.
Doc. Type: Translation
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8118; STAR1913
Co. of Pub.: Japan
Contract No.: NASA-3199
A high speed method for forming ribbon crystal of desired width and thickness is characterized by drawing out the ribbon through a space whose distance is 5.7 times that of the thickness of the grown ribbon. The ribbon is drawn out between the molten body of the lower surface and the tip of the upper surface of the seed crystal and growing crystal. The ribbon growing at the tip of the seed crystal is drawn out horizontally and centrifugally by controlling the amounts of cooling and heating. The temperature is maintained about equal to the upper surface of the outlets from which the molten substance is drawn, at least in certain portions of the crucible rim, the rim is elevated to prevent dropping of the molten raw material.
Desc.: *Crystal growth; *Horizontal orientation; *Melts (Crystal growth); *Ribbons; Coagulation; Cooling; Crucibles; Heat sinks; Heating; High speed
Ident.: *Foreign technology; Translations; NTISNASAT
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 81 
845462 N81-21544/4
Large Area Silicon Sheet by EFG (Quarterly Report, 1 Oct. 1980 - 31 Dec. 1980) 
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; M4774112
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NASA-CR-164138; DOE/JPL-954355-80/16 17 Feb. 81 38p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8117; STAR1912
Co. of Pub.: U. S.
Contract No.: JPL-954355
The development of a technique for the production of silicon ribbon is discussed. Extensive characterization of the multiple ribbon Furnace 3A main zone temperature profile was performed and the information used to improve uniformity of heating. Irregularities in the main zone heater were associated with growth difficulties at specific cartridge locations, and growth conditions subsequently improved by profiling the main zone heater. Good growth conditions were established in all three cartridge positions. These improvements allowed multiple growth of three 10 cm wide ribbons to be demonstrated for periods of an hour on several occasions. A gas distribution system for the 10 cm cartridge was introduced and demonstrated to lead to improved ambient control during growth. Growth without and with CO2 showed that quality improvement in 10 cm ribbon grown with cold shoes results from ambient manipulation.
Desc.: *Crystal growth; *Furnaces; *Production engineering; *Ribbons; *Silicon films; Carbon dioxide; Gas injection; Production costs; Solar cells; Temperature control
Ident.: NTISNASA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 82 
844240 AD-A098 050/8
Nucleate Pool Boiling of High Dielectric Fluids from Enhanced Surfaces (Master's thesis)
Lepere, Jr., Victor Joseph
Naval Postgraduate School, Monterey, CA.
Corp. Source Codes: 019895000; 251450
Dec 80 97p
Lang.: Eng.
Doc. Type: Thesis
NTIS Prices: PC A05/MFA01
Jrnl Ann.: GRAI8117
Co. of Pub.: U. S.
Experimental results of the heat transfer performance of three enhanced surfaces, a Union Carbide, Linde High Flux, a Hitachi Thermoexcel-E, a Weland Gewa-T, and a plain copper surface in the nucleate pool boiling regime in R-113 and FC-72 are presented. Prior to obtaining the data, each of the surfaces was subjected to one of three initial conditions, and the effect of past history on boiling incipience was observed. The data showed that all the surfaces behaved in a similar manner prior to the onset of boiling. Temperature overshoots were most pronounced for the initial condition in which the surfaces were submerged in the liquid pool overnight. All of the enhanced surfaces exhibited a two to ten-fold increase in the heat transfer coefficient when compared to the plain surface. The High Flux surface was most effective over a broad range of heat fluxes. The Hitachi surface showed a similar gain in heat transfer coefficient to that of the High Flux surface below 10 kW/sq. m, while the Gewa-T surface was not as effective as the other surfaces at low heat fluxes. At high fluxes, the Gewa-T surface performed in a comparable if not better manner. (Author)
Desc.: *Solid state electronics; *Microminiaturization; *Cooling; *Heat transfer; *Semiconductor devices; Coefficients; Nucleation; Boiling; Surfaces; Copper; Activation; Heat flux; Theses
Ident.: Nucleate boiling; Nucleate pool boiling; Linde High Flux surface; Hitachi Thermoexcel-E surface; Gewa-T surface; NTISDODXA
Sec. Head.: 13A (Mechanical, Industrial, Civil, and Marine Engineering--Air Conditioning, Heating, Lighting, and Ventilating); 94G (Industrial and Mechanical Engineering--Manufacturing Processes and Materials Handling)

Y006006 83 
839334 N81-19945/7
Interpretation of the Striation of Ruby Crystals
Nitschmann, G. ; Gregory, A.
Canada Inst. for Scientific and Technical Information, Ottawa (Ontario).
Corp. Source Codes: 062652000; CE395465
Sponsor: National Aeronautics and Space Administration, Washington, DC.
Report No.: NRC/CNR-TT-1996;
ISSN-0077-5606 1/81 9p
Trans. Into Eng. from zeitschrift fuer Physik Chem. Neue Folge, (Germany, F. R.), No. 121, 1980 p 237-242.
Lang.: Eng.
Doc. Type: Translation
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8115; STAR1910
Co. of Pub.: Germany, Federal Republic of
The occurrence of periodic color chances in laser grown ruby crystals is examined. The crystals were grown using the method of floating zone melting; the floating zone being produced by beams from CO2 lasers. Cathode luminescence showed the same striations due to differences in Cr content. As the value of the distribution coefficient of Cr in Al2O3 is practically unity, fluctuations in the temperature of the molten zone and the resulting changes in growth rate should not influence the Cr distribution. It is found that the content of dissolved gas in the melt is the reason for the luminescence fluctuations and color striations.
Desc.: *Crystal growth; *Crystals; *Ruby; *Striation; Carbon dioxide lasers Cathodoluminescence; Chromium; color; Dissolved gases; Electron microscopy
Ident.: *Foreign technology; Translations; NTISNASAT
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 84 
827944 AD-A093 881/1 
The Interaction of Monatomic and Diatomic Molecules with Solid Surfaces: The Structure of Water Cluster Beams and Their Scattering from Surfaces (Final rept. 1 Oct. 78-30 Sept. 80)
Dreyfuss, David D. ; Trilling, Leon ; Wachman, Harold Y.
Massachusetts Inst. of Tech., Cambridge. Dept. of Aeronautics and Astronautics.
Corp. Source Codes: 001450109; 220003
Sponsor: Air Force Office of Scientific Research, Bolling AFB, DC.
Report No.: AFOSR-TR-8-1365
Nov. 80 182p
Lang.: Eng.
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI8111
Co. of Pub.: U. S.
Contract No.: F44620-76-C-0036; 2307; A3
An experimental study of homogeneous and heterogeneous nucleation was conducted, using molecular beam techniques: mass spectrometry and time-of flight velocity spectrometry, with and without mass filtering. Both the clustered beam itself and the scattering of the clusters from surfaces were studied. The beam was found to consist of a broad spectrum of clusters all having approximately the same velocity distribution. Small clusters were found to have a binding energy much less than that of bulk ice. Measurements of a beam scattered from a surface using a time-of-flight velocity spectrometer show four distinct patterns. These are: (1) a diffuse scattering channel (monomers, Maxwellian/cosine at the target temperature), (2) a direct inelastic channel for monomers characterized by a small loss of incident velocity with a broad spatial distribution peaked at the tangent for all incident angles, theta sub i, (3) a well-defined specular directed lobe (theta sub s = theta sub i greater than 50 deg) with particle velocity much slower than (1) or (2) and a velocity distribution narrower than a stationary Maxwellian, and (4) another slow peak with a slightly broader velocity distribution into a sharp intensity peak near the tangent for all theta sub i greater than 50 deg. The amplitude of the specularly directed slow peak (3) appears to give a sensitive indication of surface coverage. (Author)
Desc.: *Ice; *Nucleation; *Molecular beams; Diatomic molecules; Mass spectrometry; Water; Crystallization; Crystal growth; Heterogeneity
Ident.: Monatomic molecules; Heterogeneous ice nucleation; NTISDODXA ; NTISDODAF
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 85 
821271 DOE/MC/12734-T1
Hydrocarbon Autothermal Performing Program Annual Report
Lewis, P. F. ; Kothandaraman, G. ; Pugh, E. ; Lord, G. ; Yarrington, R.
Physical Sciences, Inc., Woburn, MA.
Corp. Source Codes: 100572000; 9503380
Sponsor: Department of Energy, Washington, DC.
Report No.: TR-235
Oct. 80 9p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8108; NSA0600
Co. of Pub.: U. S.
Contract No.: AC21-79MC12734
A goal of the national molten carbonate fuel cells program is to develop the capability to use heavy fuel oil or coal liquids as feed stock for fuel cell power plants. These liquid fuels must be reformed to gaseous fuels which are composed mainly of CO, H sub 2 , CO sub 2 , and H sub 2 O (and N sub 2 ) for use by the fuel cell. The goal of this program is to understand the mechanism for the formation of soot under conditions relevant to autothermal reformers and to translate this understanding to recommendations for modification of autothermal design. This goal is to be accomplished by a combination of experimental and theoretical tasks. The experimental tasks are to study the mechanisms of soot formation under controlled conditions with gaseous fuels, O sub 2 and H sub 2 O, both premixed, and with well-described mixing, with and without catalysts. The theoretical tasks will develop models to describe the experimental data first by detailed chemical and fluid mechanical processes, second by quasiequilibrium models, and finally by scaling laws. These scaling laws will then be utilized in recommending reformer design modifications. The first year's work of the two year program is described. (ERA citation 06: 001812)
Desc.: *Coal fuel cells; *Coal liquids; *Fuel oils; *Hydrocarbon fuel cells; *Molten carbonate fuel cells; Catalysts; Chemical reaction kinetics; Chemical reactions; Chemical reactors; Data analysis; Ethane; Flow models; Fuel systems; Mathematical models; Optimization; Oxygen; Parametric analysis; Partial oxidation processes; Reformer processes; Research programs; Scaling laws; Soot; Thermochemical processes; Water
Ident.: ERDA/010404; ERDA/020400; ERDA/300503; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 7D (Chemistry--Physical Chemistry); 97O (Energy--Miscellaneous Energy Conversion and Storage); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 86 
819540 DOE/PC/04717-5
Catalytic Conversion of Oxygenated Compounds to Low Molecular Weight Olefins. Progress Report for the Period March 1, 1980 to August 31, 1980
Anthony, R. G.
Texas A and M Univ., College Station.
Corp. Source Codes: 004736000; 618100
Sponsor: Department of Energy, Washington, DC.
30 Sept. 80 12p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8107; NSA0600
Co. of Pub.: U. S.
Contract No.: AS02-78PC0471
A possible route for producing low molecular weight olefins is to convert synthesis gas to methanol followed by conversion of methanol to olefins in a one-step process. During this report period the reaction apparatus suitable for reaction pressure of 500 psi to 1000 psi was constructed. A preliminary trial run was performed for the reaction of synthesis gas over an intimate mixture of methanol synthesis catalyst and ?eolon-500 (mixture of chabasite and erionite). The reaction temperature, pressure and space velocity were 400 exp 0 C, 800 psi, and 6000 r exp -1 (STP), respectively. The total carbon monoxide conversions were 15 to 24 percent. The major products were carbon dioxide and paraffins of C sub 1 to C sub 4 . Deactivation of the catalyst occurred after 10 hours. X-ray diffraction patterns of the catalyst occurred after 10 hours. X-ray diffraction patterns of the catalyst shows that crystal structure changed during the reaction, and the catalyst exhibited low crystallinity compared to synthetic erionite. (ERA citation 06: 000379)
Desc.: *Alkenes; *Carbon monoxide; *Hydrogen; *Synthesis gas; Alkanes; Carbon dioxide; Catalysis; Catalysts; Chemical reactions; Chemical reactors; Crystal structure; Deactivation; High temperature; Medium pressure; Methanol; Synthesis
Ident.: ERDA/090121; NTISDE
Sec. Head.: 7A (Chemistry--Chemical Engineering); 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering)

Y006006 87 
812581 AD-A091 203/0
Microstructure Fabrication Research
Bezdjian, Krikor A. ; Dana, Stephane S. ; Melngailis, John ; Smith, Henry I.
Massachusetts Inst. of Tech., Cambridge. Research Lab. of Electronics.
Corp. Source Codes: 001450082; 304050 1979 6p
Pub. in Research Lab. of Electronics Progress Report No. 122, Section 19, p89-91 Jan 80.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/M A01
Jrnl Ann.: GRAI8105
Co. of Pub.: U. S.
Contract No.: N00014-79-C-0908
No abstract available.
Desc.: *Microstructure; *Fabrication; *Research management; Crystallization; Epitaxial growth; Layers Silicon compounds; Solar cells; Surface chemistry; Nucleation; Diffraction analysis
Ident.: Submicrometer structure; Graphoepitaxy; Diffraction gratings; NTISDODXR
Sec. Head.: 20B (Physics--Crystallography); 6D (Physics--Solid State Physics)

Y006006 88 
810520 DOE/JPL/954373-80/14
Silicon Ingot Casting: Heat Exchanger Method (HEM)/Multi-Wire Slicing: Fixed Abrasive Slicing Technique (FAST), Phase IV. Quarterly Progress Report No. 2, April 1, 1980-June 30, 1980
Schmid, F. ; Khattak, C. P. ; Basaran, M.
Crystal Systems, Inc., Salem, MA.
Corp. Source Codes: 064364000; 9502156
Sponsor: Department of Energy, Washington, DC.
Aug. 80 46p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8104; NSA0500
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954373
Silicon ingot size cast by HEM has been extended to 34 cm x 34 cm x 10 cm. A 20 kg ingot has been solidified at 3 kg/hr. with no crucible attachment or ingot cracking problems. Another ingot of 26 kg weight has also been solidified. The heat treatment used to develop a graded structure paused cracking on the inside surface of the first large crucibles. The thermal conditions were altered to minimize high gradients and the cracking was eliminated. A high degree of single crystallinity has been maintained as the size of the ingots has been increased. A graphite retainer made out of flat plates was used to produce an ingot with flat sides and rounded curves. It is now possible to electroplate diamonds only on the cutting edge of the wire. The advantages associated with diamonds on the cutting edge only are lower kerf, improved accuracy by improved heating in the support rollers, and less degradation of the rollers. This has resulted in less wander of wires and will reduce costs by using less diamonds and less degradation of rollers. The main failure mechanism of wires - diamond pullout - has been minimized by using filler diamonds to prevent erosion of the nickel matrix. It has been shown that an electroplated wirepack can be used to slice three 10 cm diameter silicon ingots without significant diamond pullout. IPEG analysis of value added costs of sheet formation using conservative and optimistic extension of HEM and FAST technologies yields $27.05/m exp 2 ($0.191/w) and $13.49/m exp 2 (0.095/w), respectively. Assuming cost goals of other tasks are met, the projected costs are $0.654/w, conservatively, and $0.539/w, optimistically, for photovoltaic modules. (ERA citation 05: 034639)
Desc.: *Silicon; Abrasives; Casting; Cost Cracks; Crystal growth; Cutting; Diamonds; Electroplating; Heat exchanger method; Heat treatments; Impregnation; Monocrystals; Research programs; Sheets; Silicon solar cells Wires
Ident.: ERDA/140501; ERDA/360601; NTISDE 
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 89 
807331 LBL-9839
Theoretical Aspects of Solid State Reactions in a Mixed Particulate Ensemble and Kinetics of Lead Zirconate Formation
Chandratreya, S. S.
California Univ., Berkeley. Lawrence Berkeley Lab.
Corp. Source Codes: 005029222; 1112800
Sponsor: Department of Energy, Washington, DC.
Sept. 79 151p
Thesis.
Lang.: Eng.
NTIS Prices: PC A08/MF A01
Jrnl Ann.: GRAI8103; NSA0500
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-48
A theoretical analysis was carried out to estimate the quasi-steady-state external mass transport by lattice, surface and gaseous diffusion in terms of the stereologically measurable microstructural parameters of a mixed powder compact. It was shown that the gaseous transport can be described by a single dimensionless quantity termed sublimation transport modulus. Using these equations, the relative importance of the alternate external transport modes can be evaluated. Experimental work determined the reaction isotherms for the formation of lead zirconate from yellow PbO and monoclinic zirconia between 710 exp 0 C to 810 exp 0 C for two zirconia size distributions. The larger zirconia showed diffusion controlled shrinking core kinetics up to about 90 percent reaction while the smaller zirconia indicated a diffusion controlled spherical growth of up to 85 percent reaction after an instantaneous nucleation at a limited number of sites. The difference was attributed to the differences in the mixing time and not to the particulate sizes. It was observed that for the same size range, a longer mixing operation gave a better dispersion of reactants which resulted in a higher nucleation site density required for a shrinking core type of product morphology and faster kinetics. A microprobe profile analysis of partially reacted particles confirmed that for the shorter mixing period, reaction resulted in a nucleation-growth-impingement type of morphology. The activation energy as calculated from the nucleation-growth model fit to the data was 138 Kcal/mole which is close to 131 Kcal/mole reported for Pb exp 2+ diffusion in Pbo sub 3. Approximate calculations show that the gaseous external mass flux of PbO was negligible compared to the lattice or surface diffusive flux. (ERA citation 05: 00978)
Desc.: *Lead oxides; *Zirconium oxides; Chemical reaction kinetics Diffusion; Lead compounds; Mass transfer; Microstructure; Solids; Zirconates
Ident.: ERDA/400201; NTISDE
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 90 
800203 DOEJPL/954355-79/3
Large Area Silicon Sheet by EFG. Annual Progress Report, October 1, 1978-September 30, 1979
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; 9501141
Sponsor: Department of Energy, Washington, DC. 14 Mar 80 76p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI8026; NSA0500
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954355
The progress which as been made in 1978/1979 to evolve systems designs for growth stations which produce multiple silicon ribbons by the EFG process is reported. This progress culminated in the demonstration of five ribbon multiple growth in May 1979 and in recent advances toward improved electronic quality of ribbons grown from these machines. These advances were made in large measure by studies in which the composition of the gas environment around the meniscus area was varied. By introducing gases such as CO sub 2 , CO, and CH sub 4 into this region, reproducible increases in diffusion length and cell performance have been realized, with the best large area (5 cm x 10 cm) cells exceeding 1% (AM1) efficiency. (ERA citation 05: 030377)
Desc.: *Efg method; *Silicon; Annealing; Carbon dioxide; Carbon monoxide; Crystal growth; Dies; Diffusion length; Equipment; Furnaces; Methane; Performance; Research programs; Schottky barrier diodes; Silicon solar cells
Ident.: ERDA/140501; ERDA/360601; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 91 
797642 LBL-10673
Deposition of CaCO sub 3 in Porous Materials by Flashing Geothermal Fluid
Michels, D. E.
Republic Geothermal, Inc., Santa Fe Springs, CA.
Corp. Source Codes: 9505783
Sponsor: Department of Energy, Washington, DC.
Apr. 80 33p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8025; NSA0500
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-48
Deposition of CaCO sub 3 from natural geothermal fluid was studied by using porous substrates made from several granular materials. These experiments aimed to explore connections between the process of steam flash from superheated CO sub 2 -charged water and the consequent changes in the carbonate chemical equilibria. The substrates were characterized pre- and post-experiment. Flow rates and compositions of input and output fluids were determined. The resultant CaCO sub 3 deposits were examined from several points of view. (ERA citation 05: 028882)
Desc.: *Calcium carbonates; *Geothermal fluids; Aragonite; Calcite Carbon dioxide; Chemical composition; Crystal growth; Deposition; Flashing Flow rate; Porosity; Porous materials; Scaling; Water
Ident.: ERDA/150903; NTISDE
Sec. Head.: 8I (Earth Sciences and Oceanography--Mining Engineering); 97P (Energy--Geothermal Energy)

Y006006 92 
796878 DSE-2207-T2
Thin Film Polycrystalline Silicon Solar Cells. Quarterly Report No. 1, 1 October-31 December 1978
Sarma, K. R. ; Rice, M. J.
Motorola, Inc., Phoenix, Az. Solar Energy Dept.
Corp. Source Codes: 9506704
Sponsor: Department of Energy, Washington, DC. 1978 44p.
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8025; NSA0500
Co. of Pub.: U. S.
Contract No.: ET-78-C-03-2207
During this quarter, the Energy Beam deposition system was modified to obtain a deposition zone of uniform temperature. Parametric studies of silicon deposition are being conducted using this system employing a square cross-section reactor with SiHCl sub 3 as silicon source gas. In these experiments, large-area self-supporting silicon films with lengths up to 18'' were produced. As a long term solution to beam arcing problems, a rotating energy beam nozzle was designed, built and tested. Silicon deposition experiments using SiO sub 2 coated molybdenum indicated that SiO sub 2 acts as a good diffusion barrier and prevents the formation of MoSi sub 2 ; these films, however, would not separate from the substrate, so it appears that on MoSi sub 2 interface is necessary for shear separation. Energy Beam deposited silicon films were grain enhanced by the RTR technique. These silicon films, as grown, have exhibited unmeasurably low (by the SPV technique) minority carrier diffusion lengths, possibly due to a pervasive contamination during RTR growth. However, a gettering sequence involving PH sub 3 diffusion has been found to substantially improve the diffusion length of RTR processed CVD silicon films, and similar improvements can be expected in the energy beam films also, Diffusion lengths in excess of 100 mu m were observed in the gettered CVD silicon films. (ERA citation 05: 027089)
Desc.: *Silicon; *Silicon solar cells; Charge carriers; Chemical reactors; Crystal growth; Diffusion length; Energy beam deposition; Energy beam deposition films; Equipment; Fabrication; Films; Gettering; Impurities ; Microstructure; Nozzles; Polycrystals; Research programs; Ribbon-to-ribbon method
Ident.: ERDA/140501; ERDA/3z0601; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 93 
796744 DOE/JPL/954355-80-1
Large Area Silicon Sheet by EFG. First Quarterly Report, Jan 1-March 31, 1980
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 9501141
Sponsor: Department of Energy, Washington, DC. 1 Jun. 80 56p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI8025; NSA0500
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954355
Operation of Furnace 3 in a multiple mode with three 10 cm cartridges and with melt replenishment has been demonstrated for the first time. Detailed characterization of the temperature field of the 10 cm cartridge has been started in order to assist in work on improving cartridge performance and in implementation of automatic controls. Development of the 10 cm cartridge system in Furnace 17 has proceeded with efforts to improve high speed performance and to study means by which to improve ribbon quality. Reliable growth has been achieved up to speeds as high as 4.0 cm/min., and cell efficiencies of above 10% (AM1 and AR coated) have been demonstrated for this ribbon. The study of ambient influences on growth conditions and quality has continued in Furnace 18 with additional growth with CO sub 2 present. The photovoltaic performance of ribbon grown with and without CO sub 2 has been investigated, and differences in light enhancement characteristics are observed as a function of the type of processing used, viz., CVD as compared to PH sub 3 . (ERA citation 05: 028599)
Desc.: *Silicon; *Silicon solar cells; Carbon dioxide; Control systems; Crystal growth; Data; Diffusion; Efg method; Electrical properties ; Equipment; Fabrication; Fill factors; Furnaces; Graphs; Isolated values; Performance; Research programs; Sheets; Spectral response; Temperature monitoring
Ident.: ERDA/140501; ERDA/360601; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources); 97N (Energy--Solar Energy)

Y006006 94 
796743 DOE/JPL/954343-80/19
Process Feasibility Study in Support of Silicon Material Task I. Quarterly Technical Progress Report (XIX), March 1-May 31, 1980
Yaws, C. L. ; Li, K. Y.
Lamar Univ., Beaumont, TX. Dept. of Chemical Engineering.
Corp. Source Codes: 9502479
Sponsor: Department of Energy, Washington, DC.
Jun. 80 35p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8025; NSA0500
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954343
Analyses of process system properties were continued for chemical materials important in the production of silicon. Major physical, thermodynamic and transport property data are reported for silicon including critical constants, vapor pressure, heat of vaporization, heat of sublimation, heat capacity, density, surface tension, viscosity and thermal conductivity. The property data covers both liquid and solid phases and are reported as a function of temperature for rapid engineering usage. Major efforts in chemical engineering analysis centered on the HSC process (Hemlock Semiconductor Corporation). The approach for the process involves performing initial analysis for DCS production (ichlorosilane) and then performing analysis of polysilicon production from the DCS. For the DCS production, status and progress are reported for primary activities of base case conditions (65%), reaction chemistry (65%), process flowsheet (60%), material balance (50%) and energy balance (40%). Two key features - redistribution reactor relocation and final distillation - are introduced to increase yield of DCS by about 10 to 20%, help insure purity and reduce potential dust (fine particle nucleation) components in the polysilicon feed material. The preliminary flowsheet for DCS production was forwarded to Hemlock Semiconductor Corporation for initial screening and review. Hemlock Semiconductor is in agreement in regards to relocation of the redistribution reactor to increase yield. Additional follow-up review is in progress including boron removal options identified by Hemlock Semiconductor. 166 references. (ERA citation 05: 025571)
Desc.: *Silicon; Chemical reactions; Critical pressure; Critical temperature; Data; Density; Engineering; Feasibility studies; Graphs; Isolated values; Physical properties; Production; Specific heat; Sublimation heat; Surface tension; Thermal conductivity; Thermodynamic properties; Vapor pressure; Vaporization heat; Viscosity
Ident.: ERDA/140501; ERDA/360603; ERDA/360601; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 95 
783611 DOE/JPL/954355-79/4
Large Area Silicon Sheet by EFG. Fourth Quarterly Report, October 1, 1979-December 31, 1979
Wald, F. V.
Mobil Tyco Solar Energy Corp., Waltham, MA.
Corp. Source Codes: 100198000; 9501141
Sponsor: Department of Energy, Washington, DC. 1 May 80 39p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8020; NSA0500
Co. of Pub.: U. S.
Contract No.: NAS-7-100-954355
In Machine No. 1, studies concerning the influence of gas ambients on the properties of the ribbon grown from resistance heated machines have continued. It has been demonstrated that material grown in a CO sub 2-containing ambient can be processed so that cell efficiencies of approx. 12% (AM1) result. Machine 3B, the multiple furnace, is still in preparation for its fist 10 cm ribbon multiple run. In Machine 17, full-width growth at 3 to 4 cm/min. is now routine, and quality-related work will commence. (ERA citation 05: 021973)
Desc.: *Silicon; Carbon dioxide; Carbon monoxide; Crystal growth; Dies; Efg method; Electrical properties; Equipment; Furnaces; Modifications ; Optimization; Performance; Silicon solar cells
Ident.: ERDA/140501; ERDA/360601; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive--Power Sources) ; 20B (Physics--Crystallography); 97N (Energy--Solar Energy); 46D (Physics--Solid State Physics)

Y006006 96 
771590 ORNL/TM-6445
Separation of Americium, Curium, and Rare Earths from High-Level Wastes by Oxalate Precipitation: Experiments with Synthetic Waste Solutions
Forsberg, C. W.
Oak Ridge National Lab., TN. 
Corp. Source Codes: 021310000; 4832000
Sponsor: Department of Energy, Washington, DC.
Jan 80 103p
Lang.: Eng.
NTIS Prices: PC A06/MF A01
Jrnl Ann.: GRAI8016; NSA0500
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-26
The separation of trivalent actinides and rare earths from other fission products in high-level nuclear wastes by oxalate precipitation followed by ion exchange (OPIX) was experimentally investigated using synthetic wastes and a small-scale, continuous-flow oxalic acid precipitation and solid-liquid separation system. Trivalent actinide and rare earth oxalates are relatively insoluble in 0.5 to 1.0 M HNO sub 3 whereas other fission product oxalates are not. The continuous-flow system consisted of one or two stirred-bank reactors in series for crystal growth. Oxalic acid and waste solutions were mixed in the first tank, with the product solid-liquid slurry leaving the second tank. Solid-liquid separation was tested by filters and by a gravity settler. The experiments determined the fraction of rare earths precipitated and separated from synthetic waste streams as a function of number of reactors, system temperature, oxalic acid concentration, liquid residence time in the process, power input to the stirred-tank reactors, and method of solid-liquid separation. The crystalline precipitate was characterized with respect to form, size, and chemical composition. These experiments are only the first step in converting a proposed chemical flowsheet into a process flowsheet suitable for large-scale remote operations at high activity levels. (ERA citation 05: 014945)
Desc.: *Americium; *Curium; Opix process; *Radioactive waste processing; *Rare earths; Fission products; Flowsheets; High-level radioactive wastes; Ion exchange; Oxalates; Oxalic acid; Precipitation
Ident.: ERDA/052001; NTISDE
Sec. Head.: 18G (Nuclear Science and Technology--Radioactive Wastes and Fission Products); 77G (Nuclear Science and Technology--Radioactive Wastes and Radioactivity)

Y006006 97 
771415 N80-21490/1
Tribological Properties of Sputtered MS sub 2 Films in Relation to Film Morphology
Spalvins, T.
National Aeronautics and Space Administration, Cleveland, OH. Lewis Research Center.
Corp. Source Codes: 019039001; ND315753
Report No.: NASA-TM-81465; E-394
Mar 80 17p
Presented at the Intern. Conf. On Met. Coatings, San Diego, 21-25 Apr. 1980; Sponsored by the AM. Vacuum Soc.
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI8016; STAR1812
Co. of Pub.: U. S.
Thin sputter deposited MoS2 films in the 2000 to 6000 A thickness range have shown excellent lubricating properties, when sputtering parameters and substrate conditions are properly selected and precisely controlled. The lubricating properties of sputtered MoS2 films are strongly influenced by their crystalline-amorphous structure, morphology and composition. The coefficient of friction can range from 0.04 which is effective lubrication to 0.4 which reflects an absence of lubricating properties. Visual screening and slight wiping of the as-sputtered MoS2 film can identify the integrity of the film. An acceptable film displays a black-sooty surface appearance whereas an unacceptable film has a highly reflective, gray surface and the film is hard and brittle.
Desc.: *Coefficient of friction; *Molybdenum disulfides; *Sputtering; *Thin films; *Tribology; Amorphous materials; Crystallinity; Electron spectroscopy; Lubrication; Nucleation; Substrates
Ident.: *Solid lubricants; NTISNASA
Sec. Head.: 11H (Materials--Oils, Lubricants, and Hydraulic Fluids) ; 71K (Materials Sciences--Lubricants and Hydraulic Fluids)

Y006006 98 
771143 IS-T-885
Interaction and Reactivity of Nitric Oxide and Carbon Monoxide on Ruthenium Surfaces
Quick, E. E.
Ames Lab., IA.
Corp. Source Codes: 001709000; 0305000
Sponsor: Department of Energy, Washington, DC.
Mar 80 207p
Thesis.
Lang.: Eng.
NTIS Prices: PC A10/MF A01
Jrnl Ann.: GRAI8016; NSA0500
Co. of Pub.: U. S.
Contract No.: W-7405-ENG-82
A multifaceted investigation of the reduction of nitric oxide by carbon monoxide using a ruthenium (102) single crystal catalyst in the pressure range 10 exp -3 to 10 Torr and temperature range of 300 to 475 exp 0 C has been undertaken. Kinetic and isotopic results indicate that the reaction products CO sub 2 and N sub 2 were produced via two reaction mechanisms. Using a reducing gas mixture (low P/sub NO//P/sub CO/ ratio) a two site mechanism was operative involving NO dissociation. The carbon monoxide kinetic order varied from +1 to -3 and the nitric oxide order varied from +1 to 0. The catalyst under these conditions was determined to be metallic ruthenium with oxygen bonded within the first surface layer. The oxygen was unreactive and formed a (1 x 3)-0 LEED pattern. Under oxidizing conditions (high P/sub NO//P/sub CO/ ratio) the catalyst was ruthenium dioxide and the functional mechanism under these reaction conditions yielded a nitric oxide order of +2 to -4. Inclusion of a site poisoning mechanism under reducing conditions and an RuO sub 2 growth mechanism involving ruthenium cation transfer under oxidizing conditions into the kinetic rate laws led to an overall rate law which could be fit to the carbon monoxide and nitric oxide order plots. Using isotopically oxygen labeled reactants, it was observed that the three possible isotopes of carbon dioxide were produced. A gamma -CO surface species is postulated as an intermediate in the exchange process. The reaction was observed to be initially surface structure insensitive and the reaction kinetics were derived using a Langmuir-Hinshelwood formalism. (ERA citation 05: 016252)
Desc.: *Carbon monoxide; *Nitric oxide; *Ruthenium; Catalysts; Catalytic effects; Chemical reaction kinetics; Oxidation; Reduction; Ruthenium oxides; Surfaces
Ident.: ERDA/400201; ERDA/330701; NTISDE
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 99 
751589 N80-12549/5
Schottky Barrier Solar Cell and Method of Fabrication (Patent Application)
Stirn, R. J. ; Yeh, Y. C. M.
National Aeronautics and Space Administration. Pasadena Office, CA.
Report No.: PAT-APPL-6-093 714; NASA-CASE-NPO-13689-2
Filed 13 Nov. 79 33p
This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS.
Lang.: Eng.
Doc. Type: Patent
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI8008; STAR1803
Co. of Pub.: U. S.
Contract No.: NAS7-100
A Schottky barrier solar cell is described which consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range, is deposited on the substrate after a passivation layer is deposited on the substrate to prevent migration of impurities into the polycrystalline germanium on a substrate of low-cost conductive material. Then, the polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 microns, and preferably considerably more. It serves as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown to a selected thickness. Then, a thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer.
Desc.: *Production engineering; *Schottky diodes; *Solar cells; Epitaxy; Germanium; N-type semiconductors; Oxides; *Patent applications; Polycrystals; Substrates
Ident.: Gallium arsenide solar cells; NTISNASA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 13H (Mechanical, Industrial, Civil, and Marine Engineering--Industrial Processes); 97N (Energy--Solar Energy); 90F (Government Inventions For Licensing--Electrotechnology)

Y006006 100 
735794 N79-31064/5
Crystal Growth of 3-5 Semiconductors: Improvement Quality under Zero--Conditions (Final Report)
Benz, K. W. ; Weiss, H. ; Muller, G.
Erlangen-Nuremberg Univ. (Germany, F. R.). Inst. fuer Werkstoffwissenschaften.
Report No.: BMFT-FB-W-77-33
Dec 77 72p
Subm-Prepared in Cooperation with Stuttgart Univ. Misc.- Report Will Also Be Announced as Translation (Esa-TT-577). Text in German; attached summary in Eng..
Lang.: German
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7926 STAR1721
Contract No.: BMFT-WRT-1075; DFVLR-BPT-01-QV-385A
A traveling solvent method of crystal growth was studied and the crystals obtained characterized in order to determine a basis for evaluating crystal growth experiments to be conducted in Spacelab. Gallium antimonide (GaSb) and indium antimonide (InSb) crystals were grown using a vertical system (GaSb + InSb) as well as a horizontal one (InSb). A comparison was made between growth rates calculated by a diffusion limited transport model and the growth rates of the experiments. From these results it is concluded that the transport mechanism in the solution is governed by convection. The influence of various growth parameters on the crystal quality was studied. GaSb single crystals were grown with a diameter of 10 mm and the length of 0 mm. The dislocation density of these growth crystals was lower by a reactor of 100, compared with the dislocation density of the seed crystal.
Desc.: *Gallium antimonides; *Indium antimonides; *Traveling solvent method; Convection; Crystal dislocations; Crystal growth; Diffusion coefficient; Rates (Per time); Single crystals; Spacelab
Ident.: NTISNASE
Sec. Head.: 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 101 
730133 OO-2407-7
Kinetics, Morphology and Thermodynamics of the Solid--Liquid Transition of Non-Metals. Progress Report, March 1, 1978--February 28, 1979
Serkerka, R. F.
Carnegie-Mellon Univ., Pittsburgh, PA.
Corp. Source Codes: 1221000
Sponsor: Department of Energy.
Jan 79 15p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7924; NSA0400
Contract No.: EY-76-S-02-2407
Apparatus is being assembled for measurement of the solid--liquid surface tension, gamma , of two non-metallic materials, GeO sub 2 and NaCl, via the grain-boundary groove technique. According to this technique, a solid adjacent to its liquid is used in a temperature gradient and the shape of the solid--liquid interface near a grain boundary groove is measured. From this shape and a knowledge of the thermal field, gamma , a parameter extremely important in nucleation and solidification kinetics, is calculated. GeO sub 2 is chosen for its low entropy of fusion and NaCl for its simple ionic bonding; both are transparent. The apparatus for GeO sub 2 involves a lineal geometry, a two-zone furnace and an optical viewport; that for NaCl involves an axial geometry. The thermal field for the lineal geometry was calculated by the solution of finite difference equations. If future results support the tendency for the crucible to impose its simple linear temperature gradient on thin samples, the theoretical analysis will be drastically simplified and the technique might be extendible to a broad class of materials. Previous work on the modeling of Internal Centrifugal Zone Growth has been communicated to personnel at Oak Ridge who have incorporated it in their ongoing research progress. (ERA citation 04: 047069)
Desc.: *Germanium oxides; *Sodium chlorides; Crystal structure; Grain boundaries; Liquids; Morphology; Phase studies; Phase transformations ; Solids; Thermodynamic properties
Ident.: ERDA/360603; ERDA/360602; Interfacial tension; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 20M (Physics--Thermodynamics); 7D (Chemistry--Physical Chemistry); 46D (Physics--Solid State Physics); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 102 
718158 LBL-8376
Direct Observation of the Growth of Voids in Multifilamentary Superconducting Materials Via Hot Stage Scanning Electron Microscopy
Wang, J. L. F. ; Holthuis, J. T. ; Pickus, M. R. ; Lindberg, R. W.
California Univ., Berkeley. Lawrence Berkeley Lab.
Corp. Source Codes: 1112800
Sponsor: Department of Energy.
Report No.: CONF-790418-1
Nov. 78 21p.
Scanning electron microscopy conference, Washington, DC, USA, 16 Apr. 1979.
Lang.: Eng.
Doc. Type: Conference proceeding
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7919; NSA0400
Contract No.: W-7405-ENG-48
The need for large high field magnetic devices has focused attention on multifilamentary superconductors based on A15 compounds such as Nb sub 3 Sn. The commercial bronze process for fabricating multifilamentary superconducting Nb sub 3 Sn wires was developed. A major problem is strain sensitivity when long reaction times are employed. An improved hot stage for the scanning electron microscope was constructed to study the formation of the A15 phase by solid state diffusion. The nucleation and growth of voids near the interface of the A15 phase (N sub 3 Sn) and matrix were observed, monitored, and recorded on video tape. Successive layers of material heated in the hot stage were subsequently removed and the new surfaces were re-examined, using SEM-EDX and optical microscopy, to confirm the fact that the observed porosity was indeed a bulk rather than a surface phenomenon. These voids are considered to be a primary cause for degrading the mechanical, thermal and superconducting properties. (ERA citation 04: 037085)
Desc.: Niobium base alloys; Tin alloys; Defects; Electron microscopy; Electron scanning; Equipment; Fabrication; Intermetallic compounds; Mechanical properties; Porosity; *Superconductivity; Superconductors; Thermodynamic properties; Titanium alloys; Voids
Ident.: ERDA/360104; ERDA/656102; *Niobium tin; Niobium intermetallics; Tin intermetallics; NTISDE
Sec. Head.: 20L (Physics--Solid-state Physics); 11F (Materials--Metallurgy and Metallography); 46D (Physics--Solid State Physics)

Y006006 103 
709191 N79-20889/8
Thermal Analysis of Bridgman-Stockbarger Growth (Final Technical Report)
Knopf, F. W.
Guest Associates, Inc., Huntsville, AL. Advanced Materials Div.
Report No.: NASA-CR-161193; AMD-79-TR1 15 Mar 79 98p
Lang.: Eng.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7915; STAR1711
Contract No.: NAS8-33204
A thermal analysis of a cylindrical HgCdTe sample in a Bridgman-Stockbarger crystal growth configuration was conducted with emphasis on the thermal profile, interface shape and position, and the thermal gradients at the liquid-solid interface. Alloys of HgTe and CdTe with compositions approximating 20 percent Cdte, 80 percent HgTe were used. This composition results in a bandgap suited for the detection of 10.6 micron CO2 radiation. The sensitivity of the sample thermal characteristics to important growth parameters, such as thermal diffusivities, thermal conductivities, furnace temperature profile, ampoule dimensions, and growth velocity was assessed. Numerical techniques and associated computational models necessary to analyze the heat transfer process within the sample and the Bridgman-Stockbarger boundary conditions were developed. This thermal analysis mode was programmed in FORTRAN V, and is currently operational on the MSFC Univac 1100 system.
Desc.: *Bridgman method; *Cadmium tellurides; *Crystal growth; *Mercury tellurides; Single crystals; Temperature gradients; Computer programs; Crucibles; Fortran; Liquid-solid interfaces; Solid solutions; Surface temperature
Ident.: Fortran 5 programming language; Intermediate infrared radiation; Univac-1100 computers; Infrared detectors; NTISNASA
Sec. Head.: 20B (Physics--Crystallography); 9B (Electronics and Electrical Engineering--Computers); 46D (Physics--Solid State Physics)

Y006006 104 
698537 DOE/JPL/954877-3
Study Program to Develop and Evaluate die and Contained Materials for the Growth of Silicon Ribbons. Quarterly Report No. 3
Grayson, P. E. ; Addington L. A.
Eagle-Piczer Industries, Inc., Miami, OK. Miami Research Labs.
Corp. Source Codes: 2244000
Sponsor: Department of Energy.
Jul. 78 55p
Lang.: Eng.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7911; NSA0400
Contract No.: NAS-7-100-954877
Die and container material development efforts under the current program are shared among three organizations. Miami Research Laboratories (MRL)--ceramic process development and overall program management, University of Missouri--Rolla (UMR)--silicon sessile drop studies with characterization on reaction products and emphasis on atmospheric effects, Chemetal Corporation, Pacoima, California--special coatings to be applied to test coupons, die shapes and containers provided by MRL and tested/characterized by UMR. Initial sessile drop experiments on SiC, Si sub 3 N sub 4 and AlN have been conducted. Very promising results have been achieved on both SiC and Si sub 3 N sub 4 where minimal penetration of these (Controlled Nucleation by Thermochemical Decomposition) CNTD coatings by molten silicon was observed. Efforts continued in the following areas. At MRL, a set of AlN and another set of Si sub 3 N sub 4 substrates have been hot pressed. Hot pressing experiments have begun on crucible shapes. Characterization efforts have also begun on coatings and substrates. Chemetal delivered AlN coated substrates and began development efforts to produce Si-O-N coatings as predecessor to Si-O-Al-N coatings. UMR has succeeded in measuring the lowest oxygen partial pressures measured, to the knowledge of the investigators, with a solid electrolyte cell on a dynamic flowing gas buffer system. This was achieved with a yttria doped thoria oxygen sensor cell. Even lower pressures beyond this measurement capability have been achieved. (ERA citation 04: 012804)
Desc.: Aluminum nitrides; *Crucibles; *Dies; *Silicon carbides; *Silicon nitrides; Auger electron spectroscopy; Coatings; Containers; Fabrication; Hot pressing; Silicon solar cells; Substrates; Surface coating ; X-ray diffraction; Yttrium oxides
Ident.: ERDA/140501; ERDA/360603; ERDA/360601; NTISDE
Sec. Head.: 13I (Mechanical, Industrial, Civil, and Marine Engineering--Machinery and Tools); 11B (Materials--Ceramics, Refractories, and Glasses); 97F (Energy--Fuel Conversion Processes); 71D (Materials Sciences--Ceramics, Refractories, and Glass)

Y006006 105 
695685 COO-2407-6
Kinetics, Morphology and Thermodynamics of the Solid--Liquid Transition of Non-Metals. Progress Report for Period, 1 December 1976--30 November 1977
Serkerka, R. F. ; Hartzell, R. A.
Carnegie-Mellon Univ., Pittsburgh, PA.
Corp. Source Codes: 1221000
Sponsor: Department of Energy.
Nov. 77 22p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7910; NSA0400
Contract No.: EY-76-S-02-247
Modeling of the process of Internal Centrifugal zone Growth (ICzG) was completed. Both one-dimensional models (for infinitely long samples and induction coils) and two-dimensional models show similar S-curve instabilities on heating, but the two-dimensional models serve to define the shape of the molten zone. Molten zone shape was found to be a sensitive function of rf skin depth in the solid and induction coil geometry. Changes in these parameters lead to zone shapes which change from convex to concave. Practical guidelines were established for the suitability of the ICG process by calculating a maximum rf frequency to obtain a suitable surface-to-center temperature difference in the sample and a minimum frequency to avoid heating instabilities. For there to begin allowable frequency range, it is necessary that 2Hr./sub s//k greater than 1, where h is the surface heat transfer coefficient, R/sub s/ is the sample radius, and k is its thermal conductivity; this limits ICzG to poor conductors (nonmetals), except for very large samples and forced surface cooling. Experiments on silicon were used to verify the heating instability quantitatively. Internal susceptors were tried to heat oxides at low frequencies but led to local overheating and cracking. 2 figures, 2 tables. (ERA citation 04: 006993)
Desc.: *Nonmetals; Crystal growth; Heating; Mathematical models; Melting; Morphological changes; Research programs; Silicon; Solidification Thermodynamic properties
Ident.: ERDA/656000; ERDA/360202; ERDA/360602; *Phase transformations; Freezing; NTISDE
Sec. Head.: 20M (Physics--Thermodynamics); 7D (Chemistry--Physical Chemistry) 46GE (Physics--General); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 106 
694149 N79-1497/6
Langmuir's Closed Cycle as Transport Mechanism for the Growth of Tungsten Monocrystals in a Gas Mixture of 80% N2 and 20% H2
Prager, M.
Council for Scientific and Industrial Research, Pretoria (South Africa). Foreign Language Service.
Report No.: CSIR-TRANS-1410 1978 18p
Trans. Into Eng. from J. Cryst. Growth (Neth.), No. 22, 1974 p 6-12.
Lang.: Eng.
Doc. Type: Translation
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7909; STAR1705
In order to test whether Langmuir's closed cycle plays a part in crystal formation, two forming vessels were connected in series so that both tungsten tips were then in the same gas stream. The same current was passed through them, heating them to the same temperature. The gas was fed over a coiled filament between the two flasks so that any O2 present could react with the H2 of the gas mixture to form H2O. A cold trap at the temperature of liquid air and a filter charged with P2O5 should then remove any water in the gas stream. The H2O content of the gas then dropped to 1 vpm. Because of the smaller H2O content of the purified gas mixture, formation of the rhombic dodecahedron at the original tungsten monocrystal sphere of tip 2 is not so clearly defined as the sphere at tip 1 which was glowed in a gas mixture richer in H2O.
Desc.: *Closed cycles; *Crystal growth; *Single crystals; Ga mixtures; Hydrogen; Nitrogen; Transport properties; *Tungsten; Carbon dioxide; Pyrometers; Reaction kinetics; Surface reactions; Volatility; Water
Ident.: Translations; South Africa; NTISNASAT
Sec. Head.: 20 (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 107 
692621 AD-A062 127/6
Investigation of the Initiation of Solid State Structural Phase Transformations at Crystal Surfaces by Law-Energy Electron Diffraction (LEEDS) (Final rept. 1 Jun. 75-31 Aug. 78)
Ignatiev, A.
Houston Univ. TX Dept. of Physics
Corp. Source Codes: 404826
Report No.: ARO-12687.5-MS
Oct. 78 7p
Lang.: Eng.
NTIS Prices: PC A0/MF A01
Jrnl Ann.: GRAI7909
Contract No.: DAAG29-75-G-0167; DAAG29-77-G-0162
This is a report on the LEED investigations of the role of a free surface in the initiation of Martensitic phase transformations where restricted to principally cobalt surfaces and iron and titanium surfaces. The aim was to study the possible occurrence of surface localized soft phonon modes active in nucleation, however, it was first determined by LEED studies of both pre and post transformed cobalt that the traditional operational nucleation mechanism localized to a surface (surface localized 'frozen in' embryos or nuclei) and proposed faulting mechanisms were inapplicable to the cobalt system. Detailed low-energy electron-diffraction (LEED) work on the (0001) surface of cobalt has indicated no existence of surface localized different phases or embryos that could act as nuclei for the martensitic transformation. The atomic structure of the cobalt surface was shown to be equivalent to that of the bulk in both the high temperature and low temperature phases. The soft-mode idea could therefore be examined by LEED in detail as a viable mechanism for martensitic transformation nucleation at the surface of cobalt and other transforming materials. (Author)
Desc.: *Iron; *Cobalt; *Titanium; *Grain structures (Metallurgy); *Surface properties; Crystal structure; Phase transformations; Solid state physics; Low energy; Electron diffraction; Nucleation; Martensite
Identifies: Low energy electron diffraction; NTISDODXA
Sec. Head.: 11F (Materials--Metallurgy and Metallography; 71J (Materials Sciences--Iron and Iron Alloys); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 108 
689430 Y-2125
Fabrication of off-Axis Parabolic Mirrors
Bezik, M. J. ; Gerth, H. L. ; Sladky, R. E. ; Washington, C. A.
Oak Ridge Y-12 Plant, TN.
Corp. Source Codes: 9500170
Sponsor: Department of Energy
Aug. 78 39p
Lang.: Eng.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7906; NSA0400
Contract No.: W-7405-ENG-26
The report describes the fabrication process, including metal preparation, copper electroplating, single-crystal-diamond turning, optical inspection, and polishing, used to manufacture the focusing mirrors for the 10-kJ laser fusion experiment being conducted by the Los Alamos Scientific Laboratory. Fabrication of these mirrors by the techniques described resulted in diffraction-limited optics at a 10.6 mu m wavelength. (ERA citation 04: 002097)
Desc.: *Laser fusion reactors; *Mirrors; Aluminum; Carbon dioxide lasers; Copper; Fabrication; Focusing; Laser targets
Ident.: ERDA/700208; NTISDE
Sec. Head.: 18A (Nuclear Science and Technology--Fusion Devices (Thermonuclear)); 77A (Nuclear Science and Technology--Fusion Devices (Thermonuclear))

Y006006 109 
68754 AD-A061 211/9
Surface Relief Gratings of 3200-A-Period Fabrication Techniques and Influence on Thin-Film Growth (Jrnl article)
Flanders, Dale C. ; Smith, Henry I.
Massachusetts Inst. of Tech Lexington Lincoln Lab
Corp. Source Codes: 207650
Report No.: JA-4753; ESD-TR-78-264 13 Jun. 77 14p
Pub. in Jnl. of Vacuum Science Technology, v15 n3 p1001-1003 May/Jun. 78.
Lang.: Eng.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7906
Contract No.: F19628-78-C-0002; ARPA Order-600
No abstract available.
Desc.: *Gratings (Spectra); *Thin films; *Crystal growth; Nucleation ; Surface properties; Lasers; Holography; Lithography; Ion beams; Etching; Reprints
Ident.: Ultraviolet equipment; NTISDODXR
Sec. Head.: 20F (Physics--Optics); 20B (Physics--Crystallography); 46C (Physics--Optics and Lasers); 46D (Physics--Solid State Physics)

Y006006 110 
678559 AD-A059 017/4
Gallium Arsenide Materials Growth and Processing (Final scientific rept.)
Shaw, D. W.
Texas Instruments Inc. Dallas Central Research Labs
Corp. Source Codes: 403833
Report No.: AFOSR-TR-78-1170
Jun. 78 15p
Lang.: Eng.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI901
Contract No.: F44620-75-C-0036; 2306; B1
Continuous, in situ rate measurements were employed to evaluate the influence of gas phase supersaturation on the gallium arsenide epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. The resulting kinetic data permit establishment of the optimum conditions for selective epitaxial growth of gallium arsenide at subnormal temperatures using the classic gallium/arsenic trichloride/hydrogen chemical vapor deposition process. Specifically, the extent of extraneous deposition is minimized through the use of low arsenic partial pressures entering the source region or through the use of small source surface areas.
Desc.: *Semiconductors; *Gallium arsenides; *Crystal growth; *Epitaxial growth; Reaction kinetics; Vapor deposition; Gases; Supersaturation; Etching; Nucleation; Heterogeneity; Fused silica
Ident.: Chemical vapor deposition; NTISDODXA
Sec. Head.: 20L (Physics--Solid-state Physics); 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 111 
677662 DOE/JPL/954373-6
Heat Exchanger Method, Ingot Casting; Fixed Abrasive Method, Multi-Wire Slicing: Phase II. Silicon Sheet Growth Development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Quarterly Progress Report No. 2, January 1, 1978--March 31, 1978
Schmid, F. ; Khattak, C. P.
Crystal Systems, Inc., Salem, Mass.
Corp. Source Codes: 9502156
Sponsor: Department of Energy. 7 Apr. 78 52p
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7826; NSA0300
Contract No.: NAS-7-100-954373
A crack-free silicon ingot has been cast in a graded, semiconductor purity silica crucible. More than 90% single crystallinity has been achieved in 2.5 kg cast ingots. The impurities on the surface of the melt have been reduced with the use of a rapid heat-up cycle and absence of graphite retainers. Solar cells fabricated out of HEM cast material have shown conversion efficiency up to 14% under AM1 Xenon source illumination. Considerable progress has been achieved in casting square cross-section ingots. The growth in the corners has been obtained but the problem area is in fabricating a custom-made graded crucible. Kerf loss was reduced to 6.2 mil, 0.155 mm in slicing 4 cm x 4 cm cross-section with 100% yield. The abrasive life of plated impregnated blades was increased by hardening the electroless nickel layer. In an effort to prevent diamond pull-out and thereby improve the abrasive life, the plated layer was increased from 0.3 mil, 7.5 mu m to 0.5 mil, 12.5 mu m. The extra thickness buried the diamonds. A thinner copper sheath for impregnation and a thicker nickel coating to prevent diamond pull-out is expected to improve the abrasive life. Higher feed forces increased the cutting rates but resulted in deeper surface damage. (ERA citation 03: 047044)
Desc.: Abrasives; *Casting; Crucibles; Crystal structure; *Cutting Efficiency; Heat exchangers; Impurities; Monocrystals; *Silicon solar cells
Ident.: ERDA/140501; ERDA/360601; Photovoltaic cells; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 112 
677504 N78-31939/9
Investigation of Phase Equilibria of TAC Fiber Reinforced Cobalt Alloys Having a Directionally Solidified Eutectic Structure Aimed at Matrix Hardening (Ph.D. Thesis - Tech. Hochschule Aachen)
Donner, A.
Deutsch Forschung- und Versuchsanstalt fuer Luft- und Raumfahrt, Cologne (West Germany). Inst. fuer Werktoff-Forschung.
Report No.: DLR-FB-77-58
3 Jan 78 82p
Misc.-Report Will Also Be Announced as Translation Esa-TT-513).
In German; Eng. Summary.
Doc. Type: Thesis
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7826; STAR1622
The possibility of improving the 900 C creep strength of directionally solidified two phase eutectic alloys by precipitation of a third phase which is stable at high temperatures, was investigated. It was found that: 1) the aluminum content necessary for the precipitation of aluminum nitride has an insignificant effect on the eutectic equilibrium of (Co, Cr, Ni)-TaC. This enables the precipitation of aluminum nitride particles subsequent to directional solidification; 2) By varying the composition in the system (Co, Cr, Ni)-TaC as well as the precipitation of Mc carbides by the addition of tungsten, niobium and molybdenum the precipitation of No2 Ta results in such significant changes in the eutectic equilibrium that the directional solidification is prevented.
Desc.: *Cobalt alloys; *Eutectic alloys; *Phase transformations; *Tantalum carbides; *Thermodynamic equilibrium; Aluminum nitrides; Binary mixtures; Creep strength; Directional solidification (Crystals); Hardening (Materials); Reinforcing fibers; Ternary alloys; Turbine blades
Ident.: Fiber metallurgy; *Fiber composites; Ceramic fibers; Fiber reinforced composites; Cobalt matrix composites; West Germany; Theses; NTISNASAE
Sec. Head.: 11D (Materials--Composite Materials); 11F (Materials--Metallurgy and Metallography); 71F (Materials Sciences--Composite Materials); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 113 
669017 AD-A057 362/6
Differential-Hall Impurity Profiling of GaAs, Co-Implanted with Ga+, C+ and As+, C+ (Master's thesis)
Stefiniw, Michael
Air Force Inst. of Tech Wright-Patterson AFB Ohio School of Engineering
Corp. Source Codes: 012225
Report No.: AFIT/GEO/PH/77-4
Oct. 77 65p
Doc. Type: Thesis
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7823
Ion implantation is a relatively new method of doping GaAs semi-conductors but has been successfully used in devices with silicon substrates. It is a process by which impurity ions are accelerated by a particle accelerator and implanted into the substrate. The depth to which the impurity ions will penetrate is dependent upon the ion mass, energy of the beam and crystal orientation. After the implantation crystal lattices damage exists which must be annealed by heat treatment. This process is also used to electrically activate the impurity ions for conduction by moving them into the crystal sites. However, the annealing temperature required to effectively do the job exceeds the temperature where the GaAs surface begins to decompose. To prevent or reduce this effect the sample is encapsulated by a dielectric layer of Si3N4, approximately 1000 angstrom thick. This layer is placed on the sample after implantation and before annealing. The dielectric layer is etched away when electrical measurements are performed on the sample. The guarded van der Pauw measuring system is used to acquire the crystal and Hall voltages of the samples. Electrical profiles are obtained on the 900 C annealed samples by a successive etching technique.
Desc.: *Semiconductors; *Gallium arsenides; *Ion implantation; Doping; Epitaxial growth; Impurities; Substrates; Particle accelerator techniques; Crystal structure; Crystal lattices; Annealing; Heat treatment Encapsulation; Electrical properties; Hall effect; Silicon nitrides
Ident.: Dielectric films; Cobalt; Carbon; Gallium; Arsenic; NTISDODXA
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 114 
651810 AD-A054 566/5
Ternary Semiconductor Crystals for Nonlinear Optical Applications (Jrnl article)
Iseler, Gerald W. ; Kildal, Helge ; Menyuk, Norman
Massachusetts Inst. of Tech Lexington Lincoln Lab
Corp. Source Codes: 207650
Report No.: MS-4415; ESD-TR-78-36 1977 18p
Pub. in Ternary Compounds 1977, Inst. of Physics Conference Series, n35 p73-88 1977.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7817
Contract No.: F19628-78-C-0002; 649L
No abstract available.
Desc.: *Semiconductors; *Infrared optical materials; Ternary compounds; *Frequency conversion; Nonlinear systems; Single crystals; Crystal growth; Infrared radiation; Carbon dioxide lasers; Reprints; Silver compounds; Gallium compounds; Germanium compounds; Cadmium compounds; Arsenic compounds
Ident.: Nonlinear optics; NTISDODXR
Sec. Head.: 20L (Physics--Solid-state Physics); 20F (Physics--Optics); 46C (Physics--Optics and Lasers); 46D (Physics--Solid State Physics)

Y006006 115 
639870 ERDA/JPL/954373-77/3
Heat Exchanger-Ingot Casting/Slicing Process. Silicon Sheet Growth Development for the Large Area Silicon Sheet Tank of the Low Cost Silicon Solar Array Project. Eighth Quarterly Progress Report, July 1, 1977--September 30, 1977
Schmid, F. ; Khattak, C. P.
Crystal Systems, Inc., Salem, Mass.
Corp. Source Codes: 9502156
Sponsor: Department of Energy. 1 Oct. 77 89p
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7813; NSA0300
Contract No.: NAS-7-100-954373
Graded crucibles have been developed which are dense enough to avoid penetration of the molten silicon and weak enough to fracture during the cool-down cycle. These crucibles have been used to cast crack-free silicon ingots up to 3.3 kg. Significant progress has been made in the crystallinity of the samples cast. Solar cells made from one of the ingots have yielded over 9% conversion efficiency. The source of silicon carbide in the cast silicon has been identified, both theoretically and experimentally, to be associated with the use of graphite retainers in contact with the crucible. Both 45 mu m and 30 mu m diamonds can be used for efficient slicing of silicon. Wafers sliced with 45 micrometers diamond plated wire show a surface roughness of +-0.5 mu m and extent of damage of 3 mu m. In an effort to avoid diamond pullout from impregnated wire it was found that a layer of 0.3 mil thick plating is sufficient to encapsulate the diamonds. A projected cost analysis has shown that the add-on cost of casting and slicing of silicon is $11.57 per square meter. (ERA citation 03: 017149)
Desc.: *Silicon; *Casting; Chemical reactions; Cost; Coverings; Crucibles; Cutting; Diamonds; Impurities; Research programs; Silicon carbides; *Silicon solar cells; Wires
Ident.: ERDA/140501; ERDA/360601; NTISDE
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 116 
623814 ORNL/TM-670
Study of the Effect of Void Surface Coatings on Radiation-Induced Swelling
Mansur, L. K. ; Wolfer, W. G
Oak Ridge National Lab., Tenn.
Corp. Source Codes: 4832000
Sponsor: Energy Research and Development Administration.
Sept. 77 30p
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7806; NSA0300
Contract No.: W-7405-ENG-26
A theoretical investigation has been conducted into the effects on point defect diffusion of the presence of a shell of segregated material about a spherical void. The elastic image interaction of the point defect with the void surrounded by a shell of material of elastic constants which differ from those on the matrix is first computed. The interaction, which depends on the properties of the shell and the dilatation of the defect, results in an energy barrier which must be overcome when the defect diffuses to the void surface. The capture efficiency of the void for the defect is computed for a range of parameters employing this interaction. This capture efficiency is then used directly to obtain predicted effects of segregation on void nucleation and growth under irradiation. It is found that the absorption of the interstitial is reaction controlled at the void. The principal implications are that void nucleation is strongly enhanced and that the kinetics of void growth are altered significantly. Detailed derivations supporting these results are given. (ERA citation 03: 005608)
Desc.: *Physical radiation effects; *Point defects; Impurities; Mathematical models; Swelling; Voids
Ident.: ERDA/656000; ERDA/360106; ERDA/654001; Diffusion; NTISERDA
Sec. Head.: 20L (Physics--Solid-state Physics); 18H (Nuclear Science and Technology--Radioactivity); 46D (Physics--Solid State Physics)

Y006006 117 
621392 N78-10929/5
Convection Analysis on Various Crystal Growth Systems (Final Report, 15 Mar. 1976 - 15 Mar. 1977)
Case Western Reserve Univ., Cleveland, Ohio.
Report No.: NASA-CR-150421 1977 4p
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7805; STAR1601
Contract No.: NAS8-31802
Specific work done during an indicated contract period was reviewed. An extensive survey of crystal growth literature and related topics was accomplished during this time. Specific attention was given to those areas dealing with the effects of transport phenomena on crystal growth. Critical evaluations of growth techniques were made. Techniques studied included closed tube vapor growth, open reactor vapor growth, melt growth and solution growth.
Desc.: *Convection; *Crystal growth; Transport properties; Aerospace environments; Czochralski method; Hydrothermal crystal growth; Inhomogeneity
Ident.: Space manufacturing; NTISNASA
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics

Y006006 118
612635 ERDA/JPL/954373-77/6
Heat Exchanger-Ingot Casting/Slicing Process. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Sixth Quarterly Progress Report, December 17, 1976--March 21, 1977
Schmid, F.
Crystal Systems, Inc., Salem, Mass.
Corp. Source Codes: 9502156
Sponsor: Energy Research and Development Administration.
31 Mar 77 66p
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7801; NSA0200
Contract No.: NAS-7-100-954373
Efforts in crystal casting during this quarter were directed towards developing a crucible to prevent cracking and establish parameters for achieving the maximum growth rate for single crystal ingot solidification. Emphasis was placed on reducing the furnace superheat to increase growth rate and to cast SiO sub 2 liners directly in graphite crucibles. Fast growth rates were achieved by reducing the furnace temperature as close to the melt point as the instrumentation would allow--3 exp 0 C. Good single crystal growth was achieved on top of the seed by this technique, but the periphery of the seed was too cool to seed single crystal growth. Ingots were quenched from 1000 exp 0 C with helium to shatter the crucible; this did not prevent cracking of the ingot. Low density fused silica bodies were fabricated. The wetting characteristics of liquid silicon in a vacuum atmosphere was sufficient to cause penetration into open paths such as cracks and voids. Slicing tests were performed to determine: (1) the effectiveness of grooved support rollers in reducing blade wander, (2) the effectiveness of slow, nonsynchronous and stationary workpiece motions on slicing performance; and (3) the performance and life of diamond plated tungsten wire. With grooved rollers positioned on either side of the workpiece, blade wander and wafer taper were reduced an order of magnitude. For a stationary workpiece twice the blade force was required to obtain cutting rates comparable with rocked workpieces. This resulted in wire breakage, deterioration of cutting rate, and waviness of wafer surfaces. Slow non-synchronous rocking of the workpiece dramatically improved the surface quality. Wafers could be sliced at 0.2 lb., 90 gm, instead of 0.15 lb., 68 gm, force per wire and still produce high surface quality. (ERA citation 02: 051173)
Desc.: Silicon; ; *Casting; Photovoltaic cellsrucibles; Crystal growth; Cutting; Furnaces; Performance; *Silicon solar cells; Testing; Wires
Ident.: ERDA/140501; *Casting; Photovoltaic cells; NTISERDA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 119 
611352 AD-A045 419/9
Evaluation of Gallium Nitride for Active Microwave Devices (Annual technical rept. Mar 76-Aug. 77)
Gershenon, M.
University of Southern California Los Angeles Electronic Sciences Lab
Corp. Source Codes: 361620
Aug. 77 32p
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7801
Contract No.: N00014-75-C-0295; RR02102; RR0210203
In an attempt to minimize the high native donor density and the structural defects which lead to high field breakdown, a high pressure (10, 000 atm) high temperature (1500 C) system is being set up to grow, anneal and diffuse GaN under equilibrium N2 pressures, rather than by the nonequilibrium NH3 vapor phase method currently used to prepare GaN. The system should be completely operational within 4 months. A second chemical vapor deposition apparatus designed to grow 50 micrometers crystals on R-plane sapphire at 1050 C is now working and uniform crystals are being grown routinely. Due to non-planar nucleation and growth, these crystals exhibit decorated low angle grain boundaries. Some of these crystals crack by differential thermal contraction during cool-down. Some of these crystals crack at stacking faults and random small-scale precipitation in regions paralleling the linear surface topology. Light scattering from these regions colors the bulk samples. Slow growth rates eliminate the precipitated regions and tend to reduce the number of low angle boundaries and associated cracks. However, planar growth, which proceeds very slowly on (1010) sapphire or on self-nucleated whiskers eliminated virtually all these defects.
Desc.: *Gallium compounds; Semiconductor devices; Microwave equipment; Nitrides; Sapphire; *Crystal growth; Thin films; Luminescence; Low temperature; Charge carriers; Charge density; Ammonia; Electron microscopy; Scanning; Doping; Vapor phases; *Epitaxial growth; High pressure; High temperature; Drift; Nitrogen
Ident.: *Gallium nitrides; *Chemical vapor deposition; NTISDODXA
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 120 
611319 AD-A045 386/0
A Metal Cluster Generator for Gas Phase Electron Diffraction and Its Application to Bismuth, Lead and Indium: Variation in Microcrystal Structure with Size (Technical rept.)
Yokoeki, Akimichi ; Stein, Gilbert D.
Northwestern Univ. Evanston Ill Dept. of Mechanical Engineering and Astronautical Sciences
Corp. Source Codes: 403502
Report No.: TR-3
Sept. 77 38p
NTIS Prices: PC 03/MF A01
Jrnl Ann.: GRAI7801
Contract No.: N00014-76-C-0378
The objective of the work presented here is to determine the differences in structure of small metal microcrystals from that of the bulk phase as the average size is diminished. The size at which changes occur, as well as the nature of these changes, is of importance. The metal is vaporized in an oven in the presence of argon, an inert or carrier gas which initiates the metal nucleation and growth in the gas phase, near the evaporating surface. The newly formed microcrystals or clusters are entrained into a subsonic free jet and transported through a double orifice sampling arrangement. The portion of the argon-metal cluster mixture that passes through the second orifice or nozzle expands as a supersonic free jet and is crossed by a 40 kev electron beam 1 to 2 nozzle diameters downstream where diffraction patterns are taken on glass photographic plates.
Desc.: *Metal crystals; Microstructure; *Crystal growth; *Bismuth; *Lead (Metal); *Indium; *Ovens; Supersonic flow; Jet flow; Nucleation; Electron diffraction; Metal vapors; Argon; Orifices; Sampling Electron beams; Mathematical analysis
Ident.: NTISDODXA
Sec. Head.: 20B (Physics--Crystallography); 11F (Materials--Metallurgy and Metallography); 46D (Physics--Solid State Physics); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 121 
603392 ERDA/JPL/954350-76/4
Large Area Silicon Sheet Task Low-Cost Silicon Solar Array Project. Fourth Quarterly Progress Report, September 27, 1976--December 31, 1976
Garfinkel, M. ; Hal, R. N.
General Electric Co., Schenectady, N.Y.
Corp. Source Codes: 2681000
Sponsor: Energy Research and Development Administration. 7 Jan 77 21p
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7723; NSA0200
Contract No.: NAS-7-100-954350
The seeded growth furnace with a slotted molybdenum susceptor has been operated during the past quarter. The susceptor design permits flat sheets of refractory materials to be used in making up the tray. Fused quartz and sapphire trays were used. Local surface cooling was obtained by means of a water-cooled cold finger. Seeded surface growth has been obtained in this furnace using a seed with (111) axis and (112) principal aces. The silicon grown out of solution has a region approximately 3 mm x 5 mm, which is substantially single-crystal with the same crystallographic orientation as the seed. Sessile drop experiments have been initiated as a rapid method of determining the suitability of various refractory materials as trays for tin melts. These experiments indicate the presence of some impurity in the starting tin, which forms a surface film that prevents the tin from wetting silicon. This film can be removed by heating the tin to 900 exp 0 C in hydrogen. (ERA citation 02: 040428)
Desc.: Silicon; *Silicon solar cells; Cost; *Crystal growth; Epitaxy; Fabrication; Nucleation; Research programs; Sheets; Silanes Substrates; Tin
Ident.: ERDA/140501; Furnaces; Photovoltaic cells; NTISERDA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 97N (Energy--Solar Energy)

Y006006 122 
598355 COO-2995-1
Imaging of Surfaces and Defects of Crystals. Progress Report, June 1, 1976--February 15, 1977
Cowley, J. M.
Arizona State Univ., Tempe.
Corp. Source Codes: 0451000
Sponsor: Energy Research and Development Administration.
Feb. 77 17p
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7721; NSA0200
Contract No.: EY-76-S-02-2995 
The initial part of the grant period was occupied mainly in upgrading and testing the characteristics of the equipment for the imaging of surface structure by the use of diffracted electron beams or secondary electrons. New methods for specimen preparation and manipulation have been devised. The surfaces of graphite crystals have been studied as test objects and as a preliminary to studies of the effects of reagents on these surfaces. Observations of the oxidation of thin single crystals of copper have revealed the growth of thin coherent single-crystal layer of copper oxide which retain their form during extensive migration and aggregation of the metallic copper. Also the nucleation of oxide crystals on surface steps has been observed. These represent the initial stages of a systematic study of surface reactions by use of imaging with secondary electrons and diffracted beams in a medium energy (1 to 15 kV), ultra-high vacuum apparatus and by use of reflected diffracted electrons or by transmission in a high resolution 100 kV electron microscope. (ERA citation 02: 038071)
Desc.: *Copper; *Graphite; Crystals; Electron diffraction; Monocrystals; *Surface properties
Ident.: ERDA/400201; ERDA/360204; ERDA/360603; Single crystals; Surface finishing; NTISERDA
Sec. Head.: 20L (Physics--Solid-state Physics); 14B (Methods and Equipment--Laboratories, Test Facilities, and Test Equipment); 46D (Physics--Solid State Physics)

Y006006 123 
597142 AD-461 362/6
Fuel Cell Catalysts (Final rept., 1 Dec 63-30 Nov. 64)
Adlhart, O. J.
Engelhard Industries Inc. East Newark N J
Corp. Source Codes: 129400
30 Nov. 64 95p
Distribution limitation now removed. NOTE: Only 35mm microfilm is available. No microfiche.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7721
Contract No.: DA36 039AMC03700E; 1G6 22001A053 04
A research program is carried out on electrode catalysts for fuel cells employing liquid organic fuels. Complete oxidation of the fuel to carbon dioxide and water is required under expulsion of these products from the fuel cell. The electrolyte, therefore, must be of sufficient acidity to avoid retention of carbon dioxide. Work under this contract concerned the relationship between activity and structural factors of precious metal catalysts. Catalysts considered were platinum, iridium, rhodium, and platinum alloys with ruthenium, rhodium or iridium. Aside from intrinsic factors catalytic activity is related to the 'accessible surface' area. All variations of activity could be associated with the surface area development, and no other effect of primary crystallite size on activity found. Platinum-ruthenium alloys which have high surface areas and favorable pore structures exhibit markedly superior activity over platinum for the oxidation of methanol, ethane, propane and butane. Gas chromatographic measurements showed complete oxidation to carbon dioxide of ethane, propane and butane. With ethylene, however, a small amount of carbon monoxide was also formed. The catalytic metal may be diluted by supporting it on a suitable carrier which may increase activity and stability. At all particle size and low porosity of the carrier is desirable for improved mass transfer. (Author)
Desc.: *Fuel cells; Catalysts ; *Catalysts; Fuel cells ; Platinum alloys; Hydrocarbons; Fuels; Oxidation; Rhodium alloys; Iridium alloys; Electrodes; Measurement; Stability; Thermal properties; Aging (Materials); Electrochemisty; Ruthenium alloys; Alcohols; Carbon
Ident.: NTISDODXD
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources)

Y006006 124 
591159 AD-362 055/6
Mechanisms of Light-Metal Hydride Reactions (Annual technical rept. no. 1, 1 Jul. 64-31 May 65)
Schneider, G. ; Nigh, W.
Rocketdyne Canoga Park Calif
Corp. Source Codes: 308000
Report No.: R-6193
30 Jun. 65 43p
Distribution limitation now removed.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7719
Contract No.: NONR-4506 (00)
The pyrolysis of beryllium hydride was studied by following the rate of hydrogen evolution. The reaction is autocatalytic and appears to involve a process in which beryllium nuclei are formed at selective sites within the hydride followed by the subsequent growth of these nuclei. Various types of surface treatment produced essentially no effect upon the rate of pyrolysis, indicating that the nucleation and growth processes occur within the hydride particles rather than on their surface. The high temperature oxidation of BeH2 was studied using arc-imaging techniques. High-speed motion pictures of this reaction have indicated that at least a portion of the hydride undergoes very rapid pyrolysis followed by a slower reaction in which the Be is oxidized to BeO. (Author)
Desc.: *Solid rocket fuels; Combustion ; *Combustion; Solid rocket fuels ; *Hydrides; Combustion ; Pyrolysis; Oxidation; Decomposition; Reaction kinetics; Nucleation; Heat of activation; Ignition; Phase studies Laboratory equipment; Laboratory furnaces; Electric arcs; High speed photography
Ident.: NTISDODXD
Sec. Head.: 21I (Propulsion and Fuels--Rocket Propellants)

Y006006 125 
581486 AD-478 054/0
Structural Studies of Bearing Steel Undergoing Cyclic Stressing (Progress rept. no. 3, 1 May-31 Dec 65)
Martin , J. A. ; Borgese , S. F. ; Eberhardt, A. D.
Skf Industries Inc. King of Prussia PA Engineering and Research Center
Corp. Source Codes: 324180
Report No.: AL66M009
2 Jan 66 102p
Distribution limitation now removed.
NTIS Prices: PC A06/MF A01
Jrnl Ann.: GRAI7715
Contract No.: Nonr4433 (00); SKF-10-3
A number of typical spall characteristics were revealed by low and high power light microscope examinations of multiple sections made through the spalled area of deep groove ball bearing inner rings taken from 5210 steel bearings that failed in the course of laboratory endurance tests. Deformation bands were found to play a significant role in the propagation of spalls and an idealized model for spall propagation in the presence of deformation bands is proposed. There is evidence that even very limited amounts of deformation bands have an influence on spall propagation. Extensive deformation bands were seen lying at anomalous depths immediately below the surface in close proximity to surface imperfections. These surface imperfections (furrows) are microscratchs introduced during the final surface grinding operation and are not considered unusual for this type of surface finish. The appearance of structural alteration close to the surface testifies to the stress raising ability of even small surface imperfections and in cases where furrows were present, the spalls appear to have initiated at them. (Author)
Desc.: *Steel; *Ball bearings ; Shear stresses; Deformation; Crystal defects; Twining (Crystallography); Hardness; Carbide; Nucleation Plastic properties; Martensite; Microstructure; Crystal substructure; Grain structures (Metallurgy); Spallation; Structural properties; Fatigue (Mechanics)
Ident.: Steel 52100; NTISDODXD
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 20K (Physics--Solid Mechanics)

Y006006 126 
580886 AD-475 509/6
Determination of Native Defects and Endotoxial Growth of Metal-Metalloid Crystal Systems. Experimental Results in TIO2 (Rutile) (Technical documentary rept. 28 Apr. 64-28 May 65)
Farb, Norman E.
Autonetics Anaheim Calif Navigation Systems Div.
Corp. Source Codes: 400472
Report No.: AFML-TR-65-232
Sept. 65 94p
Distribution limitation now removed.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7715
Contract No.: AF33 (615)1552; AF-7350; 73501
Single and polycrystalline TiO2 (Rutile) membrane experiments were performed using two different partial pressures of O2 at temperatures from
00 C to 1200 C. Crystalline regrowth on the high partial pressure O2 surface under a variety of conditions is convincing proof of the existence of the titanium interstitials. Diffusion tunneling of dislocations occurred in the single crystal experiments. Purification of the single crystals of foreign impurities (Fc, Ag, and Mg) occurred. The regrowth of the polycrystalline sample approached 100% theoretical density. The general determination of nonstoichiometric defects and endotoxial crystal growth is considered theoretically. (Author)
Desc.: *Rutile; *Crystal growth ; Dioxides; Titanium compounds; Crystal defects; Low pressure; Oxygen; High temperature; Single crystals; Purification; Theory; Mathematical analysis; Controlled atmospheres; Argon Carbon dioxide; Carbon monoxide; Hydrogen; Iron; Diffusion
Ident.: Orientation (Crystallography); Titanium Iv) oxide; NTISDODXD
Sec. Head.: 20B (Physics--Crystallography)

Y006006 127 
579530 FE-1784-18
Program to Discover Materials Suitable for Service under Hostile Conditions Obtaining in Equipment for the Gasification of Coal and Other Solid Fuels. Quarterly Progress Report, April 1, 1976--June 30, 1976
Schaefer, A. O.; Samans, C. H. ; Howes, M. A. ; Bhattacharyya, S. ; Bangs, E. R.
Metal Properties Council, Inc., New York.
Corp. Source Codes: 9502237
Sponsor: Energy Research and Development Administration.
3 Sept. 76 286p
NTIS Prices: PC A13/MF A01
Jrnl Ann.: GRAI7714; NSA0200
Contract No.: E (49-18)-1784
Activities in research programs are reported on materials for use in fuel gasification equipment. Laboratory corrosion studies in gasifier environments at temperatures in the range of 900 to 2000 exp 0 F and at a pressure of 1000 psi for exposure times up to 5000 h are described along with studies involving exposure of both alloys and refractories in selected location of the Hygas, Consol, Synthane, Bigas, IGT Steam Iron, and the Battelle agglomerated ash pilot plants. Corrosion testing of steels for times up to 400 hr. at temperatures up to 462 exp 0 F and pressures up to 1210 psi in aqueous gas-quench solutions typical of various pilot plants is reported along with results of a laboratory erosion-corrosion alloy test program using char, ash, or dolomite as the erodent. (ERA citation 02: 021535)
Desc.: *Aluminum oxides; *Ammonia; *Carbon dioxide; *Carbon monoxide; *Carbon steels; *Chlorides; *Coal gasification plants; *Haynes alloys; *Hydrocyanic acid; *Hydrogen; *Hydrogen sulfides; *Inconel alloys; *Iron base alloys; *Methane; *Nickel base alloys; *Phenol; *Silicon carbides; *Stainless steels; *Water; *Zirconium silicates; Abrasion; Battelle hydrothermal coal process; Bi-gas process; Chemical reactors; Corrosion; Corrosive effects; Csf process; Electronmicroscopy; Hastelloy c ; Hastelloy x; Hastelloys; Hygas process; Incoloy alloys; Inconel 600; Materials; Metallography; Microstructure; Monel; Oxidation; Pilot plants; Scaling; Stainless steel-302; Stainless steel-304; Stainless steel-309; Stainless steel-310; Stainless steel-316; Stainless steel-446; Synthane process; Time dependence; Very high temperature
Ident.: ERDA/010404; ERDA/360105; NTISERDA
Sec. Head.: 21D (Propulsion and Fuels--Fuels); 7A (Chemistry--Chemical Engineering); 97F (Energy--Fuel Conversion Processes) 99B (Chemistry--Industrial Chemistry and Chemical Process Engineering); 71G (Materials Sciences--Corrosion and Corrosion Inhibition)

Y006006 128 
577730 AD-481 473/7
Solid State Broadband Optical Detector (Quarterly rept. no. 3, 1 Nov. 6-31 Jan 66)
Shaunfield, Wallace N.
Texas Instruments Inc. Dallas Semiconductor-Components Div.
Corp. Source Codes: 347677
Report No.: 03-66-15; ECOM-00499-3
Feb. 66 22p
Distribution limitation now removed.
NTIS Price: PC A02/MF A01
Jrnl Ann.: GRAI7714
Contract No.: DA-28-043-AMC-00499 (E); DA-1P622001A056; 1P622001A05603
The development program for a sensitive broadband light demodulator is divided into two tasks; Task 1, the development and fabrication of avalanche photodetectors; Task 2, testing and characterization. This quarter efforts were concentrated on eliminating microplasmas. Three runs processed during this quarter show the last run had the correct impurity profile. This was the first run to use new photomasks including a P+-ring to prevent inversion layers. Inversion layers were present on the surface but none at the photodiode. Microplasma studies were made by observing light emitted from a photodiode biased into avalanche; also by chemically etching silicon material to bring out crystal defects. Three types of light emission were observed; microplasmas, light emitted from blurred lines, and uniform breakdown. Little correlation was found between light emission and etching results. Low dislocation density material was more susceptible to processing damage for the current avalanche photodiode processing. Based on this, the last run was made with standard silicon material. Microplasmas were present but diodes were found that had photocurrent gains of 50 when biased below the first microplasma. Since all other design goals were met, these diodes will be used for microwave characterization. (Author)
Desc.: *Demodulators; *Avalanche diodes ; Photoelectric materials; Lasers; Crystal defects; Etched crystals; Silicon; Broadband; Ultraviolet spectra; Visible spectra; Infrared spectra; Amplitude modulation; Plasma medium; Epitaxial growth
Ident.: Semiconductor junctions; NTISDODXD
Sec. Head.: 9E (Electronics and Electrical Engineering--Subsystems)

Y006006 129 
572975 AD-A08 026/1
Effects of Surface Imperfections on the Nucleation of Gold on Sodium Chloride (Technical rept.)
Yacaman, M. Jose ; Hirth, J. P.
Ohio State Univ. Research Foundation Columbus
Corp. Source Codes: 267360
Report No.: OSURF-4098-15
24 May 76 8p
Pub. in Thin Solid Films, v38 p215-223 1976.
Doc. Type:
Jrnl article
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7713
Contract No.: N00014-75-C-0541
The nucleation of gold on sodium chloride doped with iron and manganese was studied by deposition in vacuum. Resultant structures were examined by electron microscopy. Nucleation was found to be enhanced on Suzuki phase precipitates in the doped crystals. The structure also yielded information on the orientation of nuclei and on the interface dislocation structure of the precipitates. (Author)
Desc.: *Gold; *Nucleation; *Sodium chloride; Doping; Iron compounds ; Manganese compounds; Vacuum deposition; Surface chemistry; Electron microscopy; Phase studies; Precipitates; Crystals; Interfaces; Dislocations ; Reprints
Ident.: NTISDODXR
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 130 
569792 AD-A037 720/0
Mechanism of Embrittlement and Brittle Fracture in Liquid Metal Environments (Technical rept.)
Kamdar, M. H.
Watervliet Arsenal N Y
Corp. Source Codes: 37100
Report No.: WVT-TR-77004
Jan 77 47p
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7712
Contract No.: 1L161102AH54
Polycrystals and single crystals of normally ductile metals fail in a catastrophic brittle manner when exposed to certain surface active liquid metal environments. The fracture mode changes from ductile to intergranular or transgranular mode or both. In some instances, propagation of cracks in liquid metal environments occur at speeds of order 100 cm/sec. Such effects are generally recognized as the phenomena of 'Liquid Metal Embrittlement'. Liquid metal embrittlement is presently considered to result from liquid metal 'adsorption-induced reduction in cohesion' of atomic bonds at regions of high stress concentrations in a solid, such as at the tip of cracks of at the sites of crack nucleation. The prerequisites for embrittlement are the same as those for brittle fracture and liquid metal embrittlement is considered a special case of brittle fracture rather than a diffusion or a corrosion type of phenomena. This paper presents come theoretical considerations (1) concerning the 'reduced-cohesion' mechanism of embrittlement and (2) embrittlement to be a special case of brittle fracture. Experimental results utilizing ideal embrittlement systems in support of the mechanism and also in support of various brittle fracture criteria are presented and discussed. (Author)
Desc.: *Liquid metals; *Embrittlement; Fracture (Mechanics); Crystal structure; Crack propagation; Nucleation; Cracking (Fracturing)
Ident.: *Metals; NTISDODXA 
Sec. Head.: 11F (Materials--Metallurgy and Metallography); 71N (Materials Sciences--Nonferrous Metals and Alloys)

Y006006 131 
563751 AD-813 602/0
Plastic Deformation of Body-Centered Cubic Metals. Volume II. Fracture of Tungsten (Technical rept. 15 Feb. 63-30 Jun. 66)
Hull, Derek ; Beardmore, Peter ; Valintine, Anne P.
Liverpool Univ. (England) Dept. of Metallurgy
Corp. Source Codes: 402618
Report No.: AFML-TR-66-369-Vol.-2
Feb. 67 19p
Distribution limitation now removed.
NTIS Prices: PC A06/MF A01
Jrnl Ann.: GRAI7710
Contract No.: AF 61 (052)-689; AF-7351; 735101
A comprehensive investigation has been made of the deformation modes and fracture mechanisms in tungsten. It has been shown that high purity single crystals of tungsten are not inherently brittle but are extremely notch sensitive. Tests on pre-cracked crystals indicate that crack propagation can occur by different mechanisms depending on the testing temperature. At low temperatures where crack propagation occurs in a completely brittle manner, the fracture stress obeys a Griffith type criterion. At higher temperatures the crack extends by a slow mode of growth due to the concentration of strain energy in front of the crack tip. Prestraining at high temperatures effectively blunts the crack and increases the low temperature brittle fracture stress. The characteristic markings on the cleavage faces depend primarily on the stress level at fracture and are essentially independent of initial dislocation density and sharpens of the microcrack. Tests on polycrystalline tungsten indicate that at temperatures below about 350 K fracture is completely brittle. At temperatures from 350 K to about 460 K the specimens yield prior to fracture but the strain to fracture is low after a region of high work hardening. At temperatures above 460 K, grain boundary parting on the specimen surface occurs immediately after yielding, resulting in increased strain to fracture. Fracture over the whole temperature range occurs predominantly by cleavage with some inter-granular separation. The amount of intergranular fracture increases slightly with temperature. Crack propagation in pre-cracked polycrystalline specimens shows similar temperature dependence to the single crystals. (Author)
Desc.: *Tungsten; Deformation ; *Single crystals; Fracture (Mechanics) ; Cracks; Impurities; Temperature; Crack propagation; Crystal defects; Crystal lattices; Crystal growth; Notch sensitivity; Strain (Mechanics); Grain structures (Metallurgy); Nucleation; Molybdenum; Stresses; Plastic properties; Brittleness
Ident.: Body centered cubic; Microcracks; NTISDODXD
Sec. Head.: 20B (Physics--Crystallography); 20K (Physics--Solid Mechanics); 11F (Materials--Metallurgy and Metallography)

Y006006 132 
563624 AD-813 027/0
Czochralski Growth of CuCl (Rept. for Sept. 64-Oct. 66)
Wilcox, William R. ; Corley, Robert A.
Aerospace Corp. El Segundo Calif Labs Div.
Corp. Source Codes: 401932
Report No.: TR-1001 (9230-03)-3; SSD-TR-67-33
Apr. 6 19p
Distribution limitation now removed.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7710
Contract No.: AF 04 (695)-1001
Commercial CuCl was found to be unsatisfactory for crystal growth. Purification was achieved both by chemical and by zone-melting techniques. CuCl ingots pulled from pure melts were found to be trained, highly twined, and polycrystalline because of the wurtzite-to-zinc blend phase transition. This phase transition was avoided by addition of from 5 to 15% KCl to the melt. Difficulty was encountered with evaporation of the CuCl and with strings of small inclusions in the flux-grown crystals. Mechanical processes produced no twins at room temperature but did result in residual strain. (Author)
Desc.: *Copper compounds; Crystal growth ; *Zone melting; Recrystallization ; Interfaces; Disks; Lithium compounds; Bismuth compounds ; Quartz; Adhesion; Optical properties; Vacuum apparatus; Chlorides; Single crystals; Twining (Crystallography); Surface properties; Reaction kinetics Impurities; Crystal defects; Defects (Materials); Melting point; Sublimation ; Purification
Ident.: Czochralski method; Melts; Phase transformations; Polycrystallines; Gradients; Temperature; NTISDODXD
Sec. Head.: 20B (Physics--Crystallography); 7D (Chemistry--Physical Chemistry)

Y006006 133 
558502 N77-120830
Manufacturing Unique Glasses in Space (Interim Report, 1 Nov. 1974 - 31 Mar. 1976)
Happe, R. P.
Rockwell International Corp., El Segundo, Calif. Space Div.
Report No.: NASA-CR-150067; SD-76-SA-0029
31 Mar 76 42p
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7708; STAR1503
Contract No.: NAS8-28991
An air suspension melting technique is described for making glasses from substances which to date have been observed only in the crystalline condition. A laminar flow vertical wind tunnel was constructed for suspending oxide melts that were melted using the energy from a carbon dioxide laser beam. By this method it is possible to melt many high-melting-point materials without interaction between the melt and crucible material. In addition, space melting permits cooling to suppress crystal growth. If a sufficient amount of under cooling is accompanied by a sufficient increase in viscosity, crystallization will be avoided entirely and glass will result. (Author)
Desc.: Containerless melts; *Glass; *Oxides; *Space manufacturing; Amorphous materials; Crystallization; Melting points; Supercooling
Ident.: NTISNASA
Sec. Head.: 11B (Materials--Ceramics, Refractories, and Glasses); 22? (Space Technology--Spacecraft); 71D (Materials Sciences--Ceramics, Refractories, and Glass); 84GE (Space Technology--General)

Y006006 134 
56159 AD-824 785/0
Low-Temperature Epitaxy of Silicon Junctions by Ultrahigh Vacuum Techniques (Technical management rept. no. 1, 1 Sept.-30 Nov. 67)
Francombe, Maurice H. ; Thomas, Richard N.
Westinghouse Research Labs Pittsburgh PA
Corp. Source Codes: 376670
Sept. 67 98p
Distribution limitation now removed.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7708
Contract No.: F33615-68-C-1058
The results of a detailed structural investigation of the homoepitaxial growth of vacuum-sublimed films of silicon in uhv are presented and discussed. The in-situ LEED observations made on the film surfaces during growth have been correlated with electron microscopy evaluations of film quality both for (111) and (100) deposits. Epitaxial growth is achieved at temperatures as low as 400C on (111) and 350C on (100); however, the (111) films are faulted for growth temperatures in the range 400 to 650C. The faults are shown to originate in the nucleation of a mixed surface structure which is easily recognizable in the LEED patterns of the growing films. A sputtering system for the growth of epitaxial Si films under residual uhv conditions was constructed, with the aim of maintaining better control of film composition. Preliminary spreading resistance measurements on vacuum sublimed layers are presented and interpreted. (Author)
Desc.: *Silicon; Semiconducting films ; *Semiconducting films; *Epitaxial growth ; Sputtering; Vacuum; Crystal defects; Nucleation; Electron diffraction
Ident.: NTISDODXD
Sec. Head.: 20L (Physics--Solid-state Physics)

Y006006 135 
555950 AD-A035 348/2
Condensation of Water Vapour on Heterogeneous Nuclei in a Shock Tube
Kotake, S. ; Glass, I. I.
Toronto Univ. (Ontario) Inst. for Aerospace Studies
Corp. Source Codes: 17920
Report No.: UTIAS-207; AFOSR-TR-77-0039
Apr. 76 59p
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7708
Contract No.: AF-AFOSR-2274-72
A macroscopic model of heterogeneous nucleation is used for a theoretical study of condensation of water-vapour/carrier-gas mixtures in a nonequilibrium nonstationary rarefaction wave generated in a shock tube. The results are compared with those from homogeneous nucleation. Nucleation is assumed to take place heterogeneously on idealized smooth, spherical solid particles of Aitken nuclei, which are chemically and electrically inert, In the processes of heterogeneous condensation, the controlling factors are the size-distribution of nuclei, the concentration of monomers on the surface of the substrate and the contact angle of embryos. Of these factors the most dominant is the contact angle, which can reduce greatly the activation energy of nucleation. Heterogeneous condensation results in less supercooling of the mixture but a faster approach to the equilibrium state. By choosing a suitable value for the contact angle, the numerical results can be made to fit the experimental data. Although this is not entirely satisfactory, it is probably preferable to changing the value of surface tension as in the homogeneous nucleation case in order to obtain agreement with experimental results. (Author)
Desc.: *Water vapor; *Condensation; Shock tubes; Nucleation; Nuclei ; Activation energy; Angles; Surface chemistry; Drops; Growth (General); Heterogeneity; Homogeneity; Mathematical models
Ident.: Canada; NTISDODXA
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 136 
552936 AD-832 761/1
Research to Investigate Fundamental Magnetic Interactions in Selected Materials (Summary technical rept. 1 Jan-31 Dec 67)
Becker, Joseph J. ; Cech, Robert E. ; Kasper, James S. ; Kouvel, James S.
General Electric CO Schenectady N Y Research and Development Center
Corp. Source Codes: 149440
Report No.: S-68-1054; AFMLTR-68-54
Apr. 68 65p
Distribution limitation now removed.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7707
Contract No.: F33615-67-C-1241; AF-7371; 737103
Section I of this report describes the continuing investigation of intermetallic compounds of the type Co5R, where R is yttrium or a rare earth, as permanent magnet materials. The theoretical interpretation of the behavior of these materials based on domain boundary nucleation and motion has been refined, and further calculations are presented. Experimental results verifying this model have been obtained. A sensitivity of the coercive force to surface condition predicted by this model was confirmed experimentally. The investigation of the stability of Co5R materials in particle form has continued. Section II describes the investigation of several materials near the Curie point. Both CrO2 and nickel are found to obey the same special equation of state. When analyzed in this way, both ordered and disordered FePd3 are found to deviate from predictions based on the molecular field model. The results obtained from an analysis of x-ray and neutron diffraction work on Co17Y2 and Co17Ho2 are described in Section III. (Author)
Desc.: *Rare earth compounds Magnetic properties ; *Intermetallic compounds; Magnetic properties ; Magnets; Anisotropy; Hysteresis; Annealing ; Equations of state; Neutron diffraction; Nickel; Oxides; Cobalt compounds ; Iron compounds; Chromium compounds; Holmium compounds; Palladium compounds; Yttrium compounds
Ident.: Curie temperature; Order-disorder theory; NTISDODXD
Sec. Head.: 20C (Physics--Electricity and Magnetism); 20L (Physics--Solid-state Physics; 9A (Electronics and Electrical Engineering--Components)

Y006006 137 
533495 ERDA/JPL/954350-76/1
Floating Substrate Process. First Quarterly Progress Report, January 6, 1976--March 28, 1976
Garfinkel, M. ; Hall, R. N.
General Electric Co., Schenectady, N.Y.
Corp. Source Codes: 2681000
Sponsor: Energy Research and Development Administration.
2 Apr. 76 21p
For Jet Propulsion Lab., Pasadena, CA.
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7626; NSA0100
Contract No.: 954350
Laboratory apparatus has been designed, built, and put into operation to study the supercooling of Sn--Si melts and the uptake of silicon from silanes. Values of supercooling of Sn--Si melts as high as 78 exp 0 C at 1100 exp 0 C and 39 exp 0 C at 1200 exp 0 C have been observed. Results to date have been limited by nucleation caused by foreign material floating on the surface of the melt. Spontaneously nucleated planar platelet growth has been observed at the Sn--Si supercooled surface having growth rates of approximately 0.5 cm/min. Homogeneous nucleation of silane decomposition has been studied at 1015 exp 0 C and 1135 exp 0 C. The flow rates of HCl required to suppress gas phase decomposition have been determined for silane flow rates up to 4.5 x 10 exp -3 mole/min. Initial silicon uptake experiments have shown that at least 20 percent of the incoming silicon contained in a flowing silane gas stream can be incorporated into liquid tin at 1040 exp C. (ERA citation 01: 018897)
Desc.: *Silanes; *Silicon; Decomposition; Deposition; Melting; Surfaces; Tin
Ident.: ERDA/140501; ERDA/360104; Crystal growth; Floating zone crystal growth; *Silicon solar cell; NTISERDA
Sec. Head.: 10B (Energy Conversion (Non-propulsive)--Power Sources) ; 20B (Physics--Crystallography); 46D (Physics--Solid State Physics)

Y006006 138 
531487 AD-859 982/1
Combustion of Solid Propellants and Low Frequency Combustion Instability Progress Report, 1 October 1967-1 November 1968 (Technical Pub.)
Boggs, T. L. ; Mathes, H. B. ; Price E. W. ; Kraeutle, K. J. ; Dehority, G. L.
Naval Weapons Center China Lake Calif
Corp. Source Codes: 403019
Report No.: NWC-TP-4749; GIDEP-565.70.00.00-x7-45
Jun. 69 72p
Distribution limitation now removed.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7626
Contract No.: NASA-6030
This report summarizes studies of ammonium perchlorate deflagration; one-dimensional modeling of steady-state burning; burning rate behavior of propellants with bimodal oxidizer particle size distribution; burning surface structure; and mechanism of metal agglomeration on burning surfaces. A review is presented of the status of knowledge of bulk mode instability. Brief summaries are presented of other recently published work, including extension of one-dimensional combustion perturbation models to treat transient gas phase response, collection of response function data from three different experimental techniques to present a full range map of mass perturbation/pressure perturbation versus pressure and frequency for propellants, and further experimental studies of the structure of the combustion zone. (Author)
Desc.: *Solid rocket propellants; Combustion ; Stability; Ammonium perchlorate; Deflagration; Particle size; Burning rate; Autoignition; Nozzle area ratio; Cold flow; Acoustics; Differential thermal analysis; Nucleation; Reports
Ident.: NTISDODXD
Sec. Head.: 21B (Propulsion and Fuels--Combustion and Ignition); 21I (Propulsion and Fuels--Rocket Propellants)

Y006006 139 
519997 AD-905 752/2
Modified Bridgman Technique Growth of Cadmium Telluride for High Power Infrared Laser Windows (Final technical rept. 15 Jun. 71-30 Jul. 72)
Gentie, A. L. ; Kiefer, J. E. ; Kyle, N. R. ; Winston, H. V.
Hughes Research Labs Malibu Calif
Corp. Source Codes: 72600
Report No.: AFML-TR-72-258
Nov. 72 79p
Distribution limitation now removed.
NTIS Prices: PC A0/MF A01
Jrnl Ann.: GRAI7622
Contract No.: F33615-71-C-1778
This program was undertaken to study the feasibility of CdTe for use as a high-power infrared laser window. Although the study began with single crystal CdTe, the mechanical properties of the material indicated that a significant gain in yield strength could be achieved with a polycrystalline body with no apparent loss in optical absorption at 10.6 micrometers. This investigation involved preparation of polycrystalline CdTe as 5 cm diameter ingots by the Modified Bridgman Technique. During the course of this program, polycrystal ingots were grown weighing nearly 1 kilogram. The modulus of rupture of single crystal CdTe was found to be in excess of 3000 psi, a value much larger than reported up to that time in the literature. A thermal annealing process was established which reproducibly yields low absorption material and is applicable to ingots grown under a variety of conditions. The study led to the fabrication of 5 cm diameter CdTe disks having measured absorption coefficients as low as 0.00089/cm and typically less than 0.002/cm. It is concluded that CdTe is feasible for application as a high power infrared laser window because of its low optical absorption and demonstrated strength in polycrystalline form. A significant step in proving feasibility is the development of the thermal annealing process which holds the possibility of further improvement in 10.6 micrometers transmission by allowing a lowering or elimination of dopant concentration thus decreasing defect concentration and the probability of precipitate formation.
Desc.: *Cadmium compounds; *Infrared windows ; *Crystal growth; Cadmium compounds ; Tellurides; Single crystals; Annealing; Infrared radiation; Scattering; Absorption; Disks; Power; Doping; Gas lasers; Carbon dioxide; Infrared lasers; Polishes
Ident.: Cadmium telluride; NTISDODXD
Sec. Head.: 20F (Physics--Optics); 20B (Physics--Crystallography); 20E (Physics--Masers and Lasers)

Y006006 140 
519964 AD-905 202/8
Laser Beam Steering (Final rept. 14 Jun. 71-14 Jun. 72)
Lotspeich, J. F. ; Wauk, M. T.
Hughes Research Labs Malibu Calif
Corp. Source Codes: 172600
Report No.: AFAL-TR-72-308
Oct. 72 96p
Distribution limitation now removed.
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7622
Contract No.: F33615-71-C-1736; AF-6100; 61004
An electronic beam scanner for CO2 lasers was designed and constructed. Specific requirements to be met were: three degree scan range, 100 resolvable beam positions, 6000 Hz raster scan in one dimension, and a capability for 100 W of 10.6 micrometer output. The device employs acousto-optic Bragg diffraction using germanium with a longitudinal acoustic wave and laser beam polarization in the crystallographic <111> direction. Sawtooth FM over a 27 MHz band centered near 100 MHz is used to provide the scan mechanism. A single small Ba2NaNB5O15 transducer provides sufficient acoustic beam divergence to yield a 3 deg. scan capability with a 1.4 dB falloff in output beam power at the scan limits. Direct-contact water cooling of the Ge crystal is provided to prevent thermal runaway. Cylindrical, reflective, telescopic optics are used for beam conditioning and recollimation. Computer calculations provided impedance characteristics and frequency response curves for general transducer design. Transducer bonding was done ultrasonically using thin metal films of Ag, Au, and Ag-In. The AG-In gave best overall performance. An rf-to-acoustic conversion efficiency of 34% was achieved at band center (4.7 dB effective transduction loss). Radio frequency driver power required for 50 (70)% diffraction efficiency was 31 (49) W.
Desc.: *Gas lasers; Electronic scanners ; *Optical radar; Electronic scanners ; *Infrared lasers; Carbon dioxide ; Steering; Acoustics; Diffraction; Germanium; Polarization; Frequency modulation; Piezoelectric transducers; Ultrasonic welding; Absorption; Reflection; Barium; Bonding; Sodium; Niobium; Liquid cooled; Optical scanning; Heating Electrooptics; Design; Phased arrays; Acoustic properties; Thermal properties; Power
Ident.: Acoustooptics; *Beam steering; Bragg diffraction; Lasers; Optical radar; NTISDODXD
Sec. Head.: 20E (Physics--Masers and Lasers); 17H (Navigation, Communications Detection, and Countermeasures--Optical Detection); 17E (Navigation, Communications Detection, and Countermeasures--Infrared and Ultraviolet Detection)

Y006006 141 
519799 AD-902 880/4
Single Crystal Cadmium Telluride High Energy IR Laser Windows (Final technical rept. 1 Jun. 71-29 Feb. 72)
Hilton, A. R.
Texas Instruments Inc. Dallas
Corp. Source Codes: 347650
Report No. TI-08-72-19; AFML-TR-72-131
Aug. 72 58p
Distribution limitation now removed.
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7622
Contract No.: F33615-71-C-1762; AF-317J
The goal of this program was to grow thick, large-area plates of CdTe using a solution epitaxy method. Solution epitaxy was chosen as the method for growth in the belief that fast reaction rates could be obtained at lower temperatures than those used for vapor growth. Operating at a temperature well below the wide existence region found for CdTe would reduce the trouble with impurities and lead to greater control of stoichiometry. Generally, solution epitaxy is a batch process used to grow thin layers. The process as used is rate-limited by diffusion of one constituent through the solution. Mechanical motion of the solution was used in an effort to overcome the batch-type nature of the process. Motion of the solution in the vicinity of the substrate led to extremely irregular layer growth along with spontaneous nucleation and growth of CdTe dendrites and platelets. Solution entrainment was observed for all deposits. Solution growth is not a good method of forming thick pieces of CdTe. For the finished process, the large-area substrate would be a mosaic made up of pieces of single crystal CdTe cut from a crystal grown in a conventional manner. Several methods of fabricating the substrate are discussed, along with efforts to alloy the mosaic pieces together. (Author)
Desc.: *Infrared windows; Infrared lasers ; *Epitaxial growth; Solutions (Mixtures) ; *Cadmium alloys; *Tellurium alloys ; Infraredoptical materials; Crystal growth; Motion; Substrates; Single crystals; Manufacturing; Temperature; Impurities; Thickness; Crystal structure; Carbon dioxide; Gas lasers
Ident.: *Cadmium telluride; Chemical Reactors; Evaluation; *Infrared laser windows; Lasers; Windows; Mosaic substrates; *Solution epitaxy method ; NTISDODXD
Sec. Head.: 17E (Navigation, Communications Detection, and Countermeasures--Infrared and Ultraviolet Detection); 20B (Physics--Crystallography)

Y006006 142 
518169 AD-A029 124/5
Laser Development in Support of the JUMPer Program for Laser Isotope Separation (Semiannual rept. 1 Jan-30 Jun. 76)
McWhorter, Alan L.
Massachusetts Inst. of Tech Lexington Lincoln Lab
Corp. Source Codes: 207650
Report No.: ESD-TR-76-207
30 Jun. 76 67p
NTIS Prices: PC A04/MF A01
Jrnl Ann.: GRAI7622
Contract No.: F19628-76-C-000; AF-920D
Contents: Growth and characterization of infrared nonlinear crystals; Application of infrared nonlinear crystals; Optically pumped lasers; CO2 laser development and evaluation; Related work not supported by LASL/RDA.
Desc.: *Semiconductor lasers; *Solid state physics; Infrared optical materials; Crystal growth; Optical pumping; Q switching; Arsenides Selenides; Carbon dioxide lasers; Carbon monoxide lasers; Infrared lasers; Hydrogen fluoride; Excitation; Radiation effects; Polyatomic molecules; Fluorides; Indium antimonides; Cadmium compounds; Gallium compounds; Germanium
Ident.: Second harmonic generation; Optical modulators; Laser isotope separation; Cadmium arsenides; Germanium arsenides; Silver selenides; Gallium selenides; Nonlinear Optics; Jumper program; NTISDODAF; NTISERDA
Sec. Head.: 20F (Physics--Optics); 20E (Physics--Masers and Lasers) ; 46C (Physics--Optics and Lasers)

Y006006 143 
511929 AD-A026 771/6
Review of Molecular Beam Research in the M. I. T. Aeronautics and Astronautics Department 1970-1975 (Final rept. 1 Apr. 73-31 Mar 76)
Trilling, Leon; Wachman, Harold Y.
Massachusetts Inst. of Tech Cambridge
Corp. Source Codes: 220000
Sponsor: Army Research Office, Research Triangle Park, N.C.
Report No.: ARO-10897.2-GS
Jun. 76 32p
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7619
Contract No.: DAHC04-73-C-0013
In the course of the research program into phenomena related to gas-surface interaction which the authors conducted over the last several years, the broad objective has been to seek answers to the following general question: Given a stream of gas molecules of known properties approaching a specified surface, how does one predict the velocity and flux distributions of the streams which leave the surface. Beginning with very simple configurations, they have attempted to account for an increasingly detailed extended set of properties of the solid surface, of the gas stream and of the interaction process. They have attempted to formulate the basic problem with a view to understanding molecular transport phenomena, first on inert metallic surfaces such as the skins of satellite vehicles in orbital flight, and later on ice crystals and nucleating centers in Brownian motion in the upper atmosphere. They have also begun to study the mechanism of interaction of molecular and atomic oxygen on graphite surfaces.
Desc.: *Molecular beams; *Gas surface interactions; Velocity; Flux density; Gas flow; Jet flow; Surface properties; Inert materials; Metals; Ice; Upper atmosphere; Oxygen; Absorbers (Materials); Desorption; Scattering ; Gases; Nucleation
Ident.: Sputtering; Time of flight spectroscopy; NTISDODA
Sec. Head.: 7D (Chemistry--Physical Chemistry); 99F (Chemistry--Physical and Theoretical Chemistry)

Y006006 144 
510031 N76-23032/5
Shape and Surface Effects in Small Superconductors
Morand, H.
European Space Agency, Paris (France).
Report No.: ESA-TT-239; ONERA-P-152
Jan 76 180p
Tran-Trans. Into Eng. of 'Effets de Forme et de Surface Dan les Petits Supraconducteurs' Onera, Paris Report Onera-p-52, 1973.
Doc. Type: Translation
NTIS Prices: PC A09/MF A01
Jrnl Ann.: GRAI7617; STAR1413
A close analogy was established between the thermodynamic properties of vortices in hard superconductors whose characteristic size satisfies xi (T) less than d less than lambda (T). The model was applied to the case of a thin film and to that of a circular cylinder in a parallel field. The anisotropy of the nucleation field was analyzed for the case of d less than xi (T), and experimental results obtained on tin whiskers are presented. Depairing properties and the resistivity which results from thermodynamic fluctuations in unidimensional superconductors immersed in an intense magnetic field are discussed. (Author)
Desc.: Shapes; *Superconductors; *Surface properties; Circular cylinders; Electrical resistivity; Landau-Ginzburg equations; Magnetic fields; Thermodynamic coupling; thin films; Tin; Whiskers (Single crystals)
Ident.: Translations; France; Mathematical models; Thermodynamic properties; NTISNASAT
Sec. Head.: 20L (Physics--Solid-state Physics); 46D (Physics--Solid State Physics)

Y006006 145 
507085 AD-A025 821/0
Research on Crystal Growth of Optical and Laser Materials (Final rept. 1 Jul. 70-31 Dec 75)
Belt, R. F. ; Dharmarajan, R. ; Puttbach, R. C. ; Uhrin, R.
Litton Systems Inc. Morris Plains N - Airtron Div.
Corp. Source Codes: 209175
Jun. 76 137p
NTIS Prices: PC A07/MF A01
Jrnl Ann.: GRAI766
The first part of this report describes attempts to grow single crystals of zircon (ZrSiO4) by flux and hydrothermal techniques. Crystals grown from a lithium tungstate melt were colored yellow brown in corners indicating absorption of a growth impurity along preferred crystallographic planes. The impurity is suspected to be iron reported in the lithium tungstate flux. Hydrothermal zircon growth was accomplished using a 3 molar aqueous KF mineralizerat about 30000 psi and 500 C. The nutrient used was ZrO2 and SiO2 powders pressed at 30000 psi and sintered at 1520 C. Due to the relatively low solubility of zircon in various molten salts, the hydrothermal method appears to be more suitable than the flux method for growing large single crystals of zircon. However, even at 600 C the hydrothermal growth rate is about 0.005 inch/day. The second part describes research efforts to prepare high purity rare earth fluorides, grow single crystals of Er, Ho, and Tm doped YLiF4, and test fabricated laser rods for operation at 2.06 micrometers. All fluorides were prepared by hydrofluorination of 99.99 + % commercial oxides at 800 - 1200 C in a platinum reactor. Single crystal growth was performed in a N2-HF atmosphere using a top seeded solution method. A platinum furnace was developed along with a diameter control device based on continuous crystal weighing.
Desc.: *Crystal growth; *Single crystals; *Laser materials; *Optical materials; Zirconium compounds; Silicon compounds; Oxides; Yttrium compounds; Lithium compounds; Fluorides; Holmium
Ident.: Hydrothermal techniques; Lithium tungstates; Holmium lasers YLF lasers; Zirconium silicates; NTISDODXA; NTISDODN
Sec. Head.: 20? (Physics--Crystallography); 20E (Physics--Masers and Lasers); 20F (Physics--Optics); 11G (Materials--Miscellaneous Materials); 46C (Physics--Optics and Lasers)

Y006006 146 
490993 AD-A021 454/4
Preparation and Single Crystal Growth of Er, Tm, Ho Doped YLiF4 Laser Materials (Annual summary rept. 1 Jan 75-31 Oct. 75)
Uhrin, R. ; Melt, R. F.
Litton Systems Inc. Morris Plains N J Airtron Div.
Corp. Source Codes: 209175
Sponsor: Office of Naval Research, Arlington, Va.; Defense Contract Administration Services Region, Springfield, N.J.
Jan 76 44p
See also report dated Jan 75, AD-A009 895.
NTIS Prices: PC A03/MF A01
Jrnl Ann.: GRAI7609
Contract No.: N00014-70-C-0379
This report describes a continuation of research efforts to prepare high purity rare earth fluorides, grow single crystals of Er, Ho, and Tm doped YLiF4, and test fabricated laser rods for operation at 2.06 micrometers. All fluorides were prepared by hydrofluorination of of 99.99 + % commercial oxides at 800 - 1200C in a platinum reactor. Single crystal growth was performed in a N2-HF atmosphere using a top seeded solution method. A platinum furnace was developed along with a diameter control device based on continuous crystal weighing. High quality scatter-free single crystals were grown in 10 - 15 mm diameter and 6 - 10 cm length. Laser rods of (3 x 30) mm size and a axis orientation were finished for several compositions. Both long pulse and Q-switch tests were run on five rods. These indicate that a favorable composition may lead to room temperature operation. Some damage occurred during the Q-switch tests but is not unique to the preparation or growth.
Desc.: *Infrared optical materials; *Laser materials; *Crystal growth; *Fluorides; Single crystals; Optical properties; Infrared lasers; Q switching; Yttrium compounds; Lithium compounds; Erbium; Thulium; Holmium; Rare earth elements; Doping; Fabrication; Rods
Ident.: *Lithium tetrafluoroyttriate; Holmium glass lasers; YLF lasers; Q switched lasers; Top seeded crystal growth; NTISDODN
Sec. Head.: 20E (Physics--Masers and Lasers); 20B (Physics--Crystallography); 46C (Physics--Optics and Lasers)

Y006006 147 
490943 AD-A021 403/1
Program in Support of the UMPer Program for Laser Isotope Separation (Semiannual rept. 1 Jul.-31 Dec 75)
McWhorter, Alan L.
Massachusitts Inst. of Tech Lexington Lincoln Lab
Corp. Source Codes: 207650
Sponsor: Air Force Systems Command, Washington, D.C.; Electronic Systems Div., Hanscom AFB, Mass.
Report No.: ESD-TR-75-337
31 Dec 75 88p
NTIS Prices: PC A05/MF A01
Jrnl Ann.: GRAI7609
Contract No.: F19628-76-C-0002; AF-920D
Contents: Growth and characterization of nonlinear optical crystals-- (CdGeAs2, AgGaSe2); Application of infrared nonlinear materials-- (Efficient, high average power SHG in CdGeAs2, Average second harmonic power limitations in CdGeAs2, Difference frequency mixing in CdGeAs2 at liquid nitrogen temperature); Optically pumped transfer lasers-- (CO transfer lasers, 16 micrometer CO2 laser, Optically pumped 16 micrometer CO2 laser); CO2 laser development and evaluation-- (12.2 micrometer wavelength calibration, High repetition rate Q-switched CO2).
Desc.: *Semiconductor lasers; Solid state lasers; Infrared optical materials; Crystal growth; Optical pumping; Nonlinear systems; Frequency multipliers; Gas lasers; Carbon dioxide lasers; Carbon monoxide lasers; Cadmium compounds; Germanium compounds; Silver compounds; Gallium compounds ; Arsenides; Selenides; Q switching; Infrared lasers
Ident.: Nonlinear optics; Second harmonic generation; Optical modulators; Laser isotope separation; Gallium selenides; Cadmium arsenides Germanium arsenides; Silver selenides; Jumper program; NTISDODAF
Sec. Head.: 20F (Physics--Optics); 20E (Physics--Masers and Lasers) ; 46C (Physics--Optics and Lasers)

Y006006 148 
490451 MHSMP-75-5E
Extrudable Explosives: Compatibility. Period Covered: October--December 1974
Faubion, B. D.
Mason and Hanger-Silas Mason Co., Inc., Amarillo, Tex.
Corp. Source Codes: 3954000
1974 7p
NTIS Prices: PC A02/MF A01
Jrnl Ann.: GRAI7608; NS7508
The long-term compatibility study of RDX/Sylgard with various weapon materials is continuing. Increased decomposition in the 9-month coupon assemblies was indicated by an increase in CO sub 2 in the atmosphere.
Desc.: *Chemical explosives; *Compatibility ; Aging; Carbon dioxide ; Crystal growth; Decomposition; Extrusion
Ident.: ERDA/450000; NTISERDA
Sec. Head.: 19A (Ordnance--Ammunition, Explosives, and Pyrotechnics); 79A (Ordnance--Ammunition, Explosives, and Pyrotechnics)

Y006006 149 
485556 COO-1198-1055
Nucleation and Growth of Gold Thin Films Vapor Deposited on Single Crystal Graphite Substrates
Darby, T. P.
Illinois Univ., Urbana.
Corp. Source Codes: 3112000
Jun. 74 290p
NTIS Prices: PC A13/MF A01
Jrnl Ann.: GRAI7606; NSA7504
Contract No.: AT (11-1)-1198
No abstract available.
Desc.: *Gold; *Deposition ; *Graphite; *Vapor deposited coatings ; Configuration; Crystal growth; Electron microscopy; Monocrystals; Morphological changes; Nucleation; Substrates; Surface coating
Ident.: ERDA/360101; NTISERDA
Sec. Head.: 11C (Materials--Coatings, Colorants, and Finishes); 11F (Materials--Metallurgy and Metallography); 20L (Physics--Solid-state Physics); 71C (Materials Sciences--Carbon and Graphite); 71E (Materials Sciences--Coatings, Colorants, and Finishes); 46D (Physics--Solid State Physics)

Y006006 150 
482355 AD-A019 472/0
Solid State Research (Quarterly technical summary rept. 1 May-31 Jul. 75)
McWhorter, Alan L.
Massachusetts Inst. of Tech Lexington Lincoln Lab
Corp. Source Codes: 207650
Report No.: TN-1975-3; ESD-TR-75-249
15 Aug. 75 62p
NTIS Prices: PC A4/MF A01
Jrnl Ann.: GRAI7605
Contract No.: F19628-76-C-0002; AF-649L
This report covers in detail the solid state research work of the Solid State Division at Lincoln Laboratory for the period 1 May through 31 July 1975. The topics covered are Solid State Device Research, Quantum Electronics, Materials Research, and Microelectronics. The Microsound work is sponsored by BMDATC and is reported under that program. (Author)
Desc.: *Solid state electronics; *Quantum electronics; *Microelectronics; Solid state physics; Photodiodes; Solid state lasers; Infrared images; Surface waves; Arrays; Fiber optics; Carbon dioxide lasers ; Gallium arsenide lasers; Laser pumping; Crystal structure; Crystal growth ; KA band; Parametric amplifiers; Packaged circuits; Charge coupled devices
Ident.: NTISDODXA; NTISDODN
Sec. Head.: 20L (Physics--Solid-state Physics; 46E (Physics--Structural Mechanics)